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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Ferroelectric Al 1− x B x N sputtered thin films on n -type Si bottom electrodes

Ferroelectric Al 1−x B x N thin films are grown on highly doped and plasma treated (100) n-type Si. We demonstrate ferroelectricity for x = < 0.01, 0.02, 0.06, 0.08, 0.13, and 0.17 where the n-type Si is both the substrate and bottom electrode. Polarization hysteresis reveals remanent polarization values between 130 and 140 μC/cm 2 and coercive field values as low as 4 MV/cm at 1 Hz with low leakage. The highest resistivity and most saturating hysteresis occurs with B contents between x = 0.06 and 0.13. We also demonstrate the impact of substrate plasma treatment time on Al 1−x B x N crystallinity and switching. Cross-sectional transmission electron microscopy and electron energy loss spectra reveal an amorphous 3.5 nm SiN x layer at the Al 1−x B x N interface post-plasma treatment and deposition. The first ~ 5 nm of Al 1−x B x N is crystallographically defective. Using the n-type Si substrate, we demonstrate Al 1−x B x N thickness scaling to 25 nm via low-frequency hysteresis and CV. Serving as the bottom electrode and substrate, the n-type Si enables a streamlined growth process for Al 1−x B x N for a wide range of Al 1−x B x N compositions and layer thicknesses.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Volumetric carrier injection in InGaN quantum well light emitting diodes

InGaN/GaN quantum well (QW) light emitting diodes (LEDs) are essential components of solid-state lighting and displays. However, the efficiency of long wavelength (green to red) devices is inferior to that of blue LEDs. To a large degree, this occurs because the equilibration of injected holes between multiple QWs of the active region is hindered by GaN quantum confinement and polarization barriers. This drawback could be overcome by volumetric hole injection into all QWs through semipolar QWs present on the facets of V-defects that form at threading dislocations in polar GaN-based structures. In this work, we have tested the viability of this injection mechanism and studied its properties by time-resolved and near-field spectroscopy techniques. Here, we have found that indeed the hole injection via the V-defects does take place, the mechanism is fast, and the hole spread from the V-defect is substantial, making this type of injection feasible for efficient long wavelength GaN LEDs.

InGaN/GaN quantum wells↗
DOE OSTI2025

First principles investigation of dopants and defect complexes in CdSe$_x$Te$_{1-x}$

Se alloying is a common approach to improve the performance of CdTe solar cells by tuning the bandgap, defect levels, and carrier density. A fundamental understanding of these improvements, specifically the effect of Se alloying on the behavior of defects and dopants in CdTe, remains unclear. Here, in this work, we present a density functional theory (DFT) study of point defect energetics in CdTe and CdSe x Te 1-x with x = 0.25, leading to a comparison of how native defects, dopants (As and Cu), impurities (Cl and O), and related defect complexes behave in CdTe vs CdSe x Te 1-x . Our calculations, performed by combining semi-local and nonlocal hybrid functionals, show a general lowering of the formation energies of native defects as well as substitutional defects formed by As and Cl upon Se addition. For successful p-type doping with As, destabilizing Cl-based defects in the CdSeTe lattice would be essential. We find evidence for some low-energy defect complexes of As, Cl, and O in CdSe 0.25 Te 0.75 . The computed defect formation energies further enable estimates of temperature-dependent defect concentrations and self-consistent Fermi levels. A comparison of defect energetics with the energies of impurity phases reveals that As, Cu, Cl, and O overwhelmingly prefer being segregated to unwanted As 2 O 5 , AsCl 3 , Cd 2 AsCl 2 , and CuO x phases rather than remain at defect sites, but such segregation is less likely to happen in CdSe 0.25 Te 0.75 than in CdTe. Overall, our work presents a list of likely defects and complexes in CdTe and Se-incorporated CdTe, paving the way to explain and mitigate limited dopant activation in experimental observations.

CdTe↗
DOE OSTI2024

Critical Review of LPBF Metal Print Defects Detection: Roles of Selective Sensing Technology

The integrative potential of LPBF-printed parts for various innovative applications depends upon the robustness and infallibility of the part quality. Eliminating or sufficiently reducing factors contributing to the formation of defects is an integral step to achieving satisfiable part quality. Significant research efforts have been conducted to understand and quantify the triggers and origins of LPBF defects by investigating the material properties and process parameters for LPBF-printed geometries using various sensing technologies and techniques. Frequently, combinations of sensing techniques are applied to deepen the understanding of the investigated phenomena. The main objectives of this review are to cover the roles of selective sensing technologies by (1) providing a summary of LPBF metal print defects and their corresponding causes, (2) informing readers of the vast number and types of technologies and methodologies available to detect defects in LPBF-printed parts, and (3) equipping readers with publications geared towards defect detection using combinations of sensing technologies. Due to the large pool of developed sensing technology in the last few years for LPBF-printed parts that may be designed for targeting a specific defect in metal alloys, the article herein focuses on sensing technology that is common and applicable to most common defects and has been utilized in characterization for an extended period with proven efficiency and applicability to LPBF metal parts defect detection.

36 MATERIALS SCIENCE↗
NASA NTRS1998

Identification of Complex Carbon Nanotube Structures

A variety of complex carbon nanotube (CNT) structures have been observed experimentally. These include sharp bends, branches, tori, and helices. They are believed to be formed by using topological defects such as pentagons and heptagons to connect different CNT. The effects of type, number, and arrangement (separation and orientation) of defects on atomic structures and energetics of complex CNT are investigated using topology, quantum mechanics and molecular mechanics calculations. Energetically stable models are derived for identification of observed complex CNT structures.

Han, Jie↗
NASA NTRS1971

The fabrication, testing and delivery of boron/epoxy and graphite/epoxy nondestructive test standards

A description is given of the boron/epoxy and graphite/epoxy nondestructive test standards which were fabricated, tested and delivered to the National Aeronautics and Space Administration. Detailed design drawings of the standards are included to show the general structures and the types and location of simulated defects built into the panels. The panels were laminates with plies laid up in the 0 deg, + or - 45 deg, and 90 deg orientations and containing either titanium substrates or interlayered titanium perforated shims. Panel thickness was incrementally stepped from 2.36 mm (0.093 in.) to 12.7 mm (0.500 in.) for the graphite/epoxy standards, and from 2.36 mm (0.093 in.) to 6.35 mm (0.25 in.) for the boron/epoxy standards except for the panels with interlayered shims which were 2.9 mm (0.113 in.) maximum thickness. The panel internal conditions included defect free regions, resin variations, density/porosity variations, cure variations, delaminations/disbonds at substrate bondlines and between layers, inclusions, and interlayered shims. Ultrasonic pulse echo C-scan and low-kilovoltage X-ray techniques were used to evaluate and verify the internal conditions of the panels.

Pless, W. M.↗
NASA NTRS1987

Structure-property relationships in directionally solidified single crystal NiAl

The ordered intermetallic alloy NiAl is being considered as a potential high temperature structural material, but lack of ductility at ambient temperatures, especially in polycrystalline form, is presently a major obstacle in achieving this goal. Even general agreement of the intrinsic ductility that can be achieved in monocrystals is in dispute. In order to understand this problem, two directionally solidified ingots of NiAl which displayed known differences in ductility were characterized in sufficient detail to identify the corresponding microstructural differences. It was found that the type and size of casting defects, i.e., porosity, present in the material were the major factors in controlling ductility of NiAl single crystals and could explain the order of magnitude variance in fracture strains reported in the literature.

Noebe, R. D.↗
NASA NTRS1997

Progressive Damage and Fracture of Unstiffened and Stiffened Composite Pressure Vessels

Structural durability and damage tolerance characteristics of pressurized graphite/epoxy laminated thin composite cylinders are investigated via computational simulation. Both unstiffened and integral hoop stiffened cylinders are considered. A computer code is utilized for the simulation of composite structural degradation under loading. Damage initiation, growth, accumulation, and propagation to structural fracture are included in the simulation. The increase of burst pressure due to hoop stiffening is quantified. Results demonstrate the significance of the type and size of local defects on the structural durability of pressurized composite cylindrical shells.

Minnetyan, Levon↗
NASA NTRS2016

BioSentinel: Biosensors for Deep-Space Radiation Study

The BioSentinel mission will be deployed on NASA's Exploration Mission 1 (EM-1) in 2018. We will use the budding yeast, Saccharomyces cerevisiae, as a biosensor to study the effect of deep-space radiation on living cells. The BioSentinel mission will be the first investigation of a biological response to space radiation outside Low Earth Orbit (LEO) in over 40 years. Radiation can cause damage such as double stand breaks (DSBs) on DNA. The yeast cell was chosen for this mission because it is genetically controllable, shares homology with human cells in its DNA repair pathways, and can be stored in a desiccated state for long durations. Three yeast strains will be stored dry in multiple microfluidic cards: a wild type control strain, a mutant defective strain that cannot repair DSBs, and a biosensor strain that can only grow if it gets DSB-and-repair events occurring near a specific gene. Growth and metabolic activity of each strain will be measured by a 3-color LED optical detection system. Parallel experiments will be done on the International Space Station and on Earth so that we can compare the results to that of deep space. One of our main objectives is to characterize the microfluidic card activation sequence before the mission. To increase the sensitivity of yeast cells as biosensors, desiccated yeast in each card will be resuspended in a rehydration buffer. After several weeks, the rehydration buffer will be exchanged with a growth medium in order to measure yeast growth and metabolic activity. We are currently working on a time-course experiment to better understand the effects of the rehydration buffer on the response to ionizing radiation. We will resuspend the dried yeast in our rehydration medium over a period of time; then each week, we will measure the viability and ionizing radiation sensitivity of different yeast strains taken from this rehydration buffer. The data obtained in this study will be useful in finalizing the card activation sequence for this mission.

Yeast↗
DOE OSTI2024

Dynamic Scaling Analysis of Accelerated Irradiation Testing on Additive Manufacturing Materials by Positron Annihilation

The timely applications of Additive Manufacturing (AM) materials in nuclear environments require accelerated irradiation tests, mainly ion irradiation to enable rapid prototyping. Low dose ion irradiation would cause sub-nanostructure changes by generation of lattice defects, vacancies, vacancy clusters and voids and void swelling caused by cellular dislocations. Positron Annihilation Lifetime (PAL), a novel technology, sensitive towards sub-nanostructure morphology with high accuracy (about 10-7 vacancy per atom), supported by Transition Electron Microscope (TEM) would be applied to identify the type and total size of the defects. The subsequent PAL measurements and TEM surface studies would be followed by PAL analysis that includes sophisticated trapping model. The PAS results would become an input to dynamic scaling analysis (that predicts radiation effects from low dose studies for high dose effects), which incorporate mean-field theory model. The final effect is an in-depth understanding of the microstructure evolution of AM materials under ion irradiation which can be extrapolated to the studies of neutron irradiation, since ion-irradiation takes less time and do not cause the irradiation hazard. The working hypothesis is that PAL technology, that have excellent sensitivity to low-defect concentration would help to identify ion-induced material damage on the atomic and nano-scale level, which then could be extrapolated to understand the neutron damage better.

accelerated irradiation testing↗
DOE OSTI2025

Pressure-induced cation and vacancy disorder-order transition and near-zero τ f in deficient hexagonal perovskite Ba 8 ZnTa 6 O 24 dielectrics

Pressure applications can enable the tuning of atomic/defect ordering and provide access to new functional materials. Here, in this study, we report that pressure-induced structural transformation featuring disorder-order transition of both cations and vacancies in the 8-layer deficient hexagonal perovskite tantalate dielectrics Ba 8 ZnTa 6 O 24 , which transformed the structure from twin to shift and remarkably lowered the temperature coefficient of resonant frequency τ f down to near zero (∼0.56 ppm/°C) from 38 ppm/°C for the twinned precursor. The atomic scale STEM-HAADF and EDS results confirm the ordering of Zn in the Ta host at the nanometer scale in the shifted material featuring well-ordered Ba 8 ZnTa 6 O 24 slabs intergrown with Ba 3 ZnTa 2 O 9 and Ba 5 Ta 4 O 15 monolayers and anti-phase grain boundaries as planar defects. The pressure-induced twin-shift structural transformation of Ba 8 ZnTa 6 O 24 features the rare constant concentration of the hexagonal stacked layers, which is allowed by the vacancy ordering at the central layers of face-shared octahedral (FSO) trimers avoiding the FSO B-B repulsion, and remarkably the faster cationic ordering kinetics compared with the 2:1 ordered complex perovskites. Although the inclusion of numerous planar defects and the oxidizable atomic defects led to significant p-type conduction and inhomogeneous electrical microstructures, resulting in an extraordinarily high extrinsic dielectric loss for the high-pressure shifted Ba 8 ZnTa 6 O 24 pellet, the intrinsically near-zero τ f could make the shifted Ba 8 ZnTa 6 O 24 perovskite an ideal microwave dielectric resonator candidate if the defects could be eliminated.

high pressure↗
DOE OSTI2026

Understanding the Thermal Physics and Metallurgy of Metal Big Area Additive Manufacturing

The research goal of this EPSCoR-DOE partnership is to mitigate defects in parts made using a new type of additive manufacturing (AM) process called metal Big Area Additive Manufacturing (m-BAAM). To realize this goal, the PIs will detect and correct defects in the part as it is being printed by combining fundamental knowledge of the thermal physics and metallurgy of m-BAAM with in-process sensor data. Developed at the DOE-funded Manufacturing Demonstration Facility at Oak Ridge National Laboratory, the m-BAAM process involves one or more robots working together to produce a part by fusing metal wire layer-by-layer using arc welding. The process can print large metal parts such as turbine blades, which is not possible using other AM processes. In addition, m-BAAM production rates are more than ten times faster than other AM processes while requiring one-tenth of the material cost. Despite their potential to become a critical force multiplier in the energy generation industry, m-BAAM parts may fail to print accurately due to retention of heat and uneven cooling. Overheating and anomalous cooling rates in turn can cause inconsistencies in the microstructure, leading to sudden failure when used in safety-critical applications. In other words, flaw formation in m-BAAM parts is governed by the thermal history – intensity and spatial distribution of heat inside the part during printing. The thermal history is a complex function of the part shape and process settings such as welding energy, path taken by the welding torch for deposition (tool path), wire feed rate, among others.

36 MATERIALS SCIENCE↗
NASA NTRS1983

Flat-plate drag measurements with vortex generators in turbulent boundary layer

Direct drag measurements were obtained on a flat plate with a spanwise row of vortex generators near the leading edge, to produce an array of stream wise vortices within the approaching turbulent boundary layer. The object was to explore the possibility of modifying the large scale structure of the boundary layer through embedded longitudinal vortices with a view to obtaining a reduction in wall shear. Both obstacle and vane type vortex generators were tested at free stream velocities 40 ft/sec to 130 ft/sec corresponding to plate length Reynolds no. 0.3 million to 0.8 million with a nominal boundary layer thickness of approximately 0.6 in. at the leading edge. A few vortex generator configurations were tested both on and off the plate to measure the total drag as well as the plate drag alone. The obstacle type devices reduced the plate drag, indicating that the wake momentum defect predominated even in the presence of streamwise vortices. The vane type vortex generators however always increased the plate drag.

Rao, D. M.↗
DOE OSTI2024

Impacts of point defects on shallow doping in cubic boron arsenide: A first principles study

Cubic boron arsenide (BAs) stands out as a promising material for advanced electronics, thanks to its exceptional thermal conductivity and ambipolar mobility. However, effective control of p- and n-type doping in BAs poses a significant challenge, mostly as a result of the influence of defects. In the present study, we employed density functional theory (DFT) to explore the impacts of the common point defects and impurities on p-type doping of Be B and Si As , and on n-type doping of Si B and Se As . We found that the most favorable point defects formed by C, O, and Si are C As , O B O As , Si As , C As Si B , and O B Si As , which have formation energies of less than 1.5 eV. While the O impurity detrimentally affects both p- and n-type dopings, C and Si impurities are harmful for n-type dopings, making n-type doping a potential challenge. Interestingly, the antisite defect pair A s B B As benefits both p- and n-type doping. Finally, the doping limitation analysis presented in this study can potentially pave the way for strategic development in the area of BAs-based electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Assessing Carrier Mobility, Dopability, and Defect Tolerance in the Chalcogenide Perovskite Ba Zr S 3

The chalcogenide perovskite Ba Zr S 3 has attracted much attention as a promising solar absorber for thin-film photovoltaics. Here we use first-principles calculations to evaluate its carrier transport and defect properties. We find that Ba Zr S 3 has a phonon-limited electron mobility of 37 cm 2 / V s, which is comparable to that in halide perovskites, but lower hole mobility of 11 cm 2 / V s. The defect computations indicate that Ba Zr S 3 is intrinsically n -type due to shallow sulfur vacancies, but that strong compensation by sulfur vacancies will prevent attempts to make it p -type. We also establish that Ba Zr S 3 shows some degree of defect tolerance, presenting only few low formation energy, deep intrinsic defects. Among the deep defects, sulfur interstitials are the dominant nonradiative recombination centers but exhibit a moderate capture coefficient. Our work highlights the material’s intrinsic limitations in carrier mobility and p -type doping, and suggests focusing on suppressing the formation of sulfur interstitials to achieve longer carrier lifetime. Published by the American Physical Society 2024

Yuan, Zhenkun (ORCID:0000000272005973)↗
NASA NTRS1986

A point defect model for nickel electrode structures

The Raman spectra for nickel electrode active mass indicate a single formula-unit crystallographic unit cell of the layered NiOOH-type. Empirical stoichiometric formulas require that extensive point defects, cation dopants and nickel vacancies, be incorporated on nickel sites. Structural differences between the alpha/gamma and beta/beta cycles, and the influence of cobalt addition on the structure will be discussed in terms of the point defect model. Other empirical data supporting the point defect model will be considered.

Loyselle, Patricia L.↗
NASA NTRS1997

Effect of Crystal Defects on Minority Carrier Diffusion Length in 6H SiC Measured Using the Electron Beam Induced Current Method

We report values of minority carrier diffusion length in n-type 6H SiC measured using a planar Electron Beam Induced Current (EBIC) method. Values of hole diffusion length in defect free regions of n-type 6H SiC, with a doping concentration of 1.7El7 1/cu cm, ranged from 1.46 microns to 0.68 microns. We next introduce a novel variation of the planar method used above. This 'planar mapping' technique measured diffusion length along a linescan creating a map of diffusion length versus position. This map is then overlaid onto the EBIC image of the corresponding linescan, allowing direct visualization of the effect of defects on minority carrier diffusion length. Measurements of the above n-type 6H SiC resulted in values of hole diffusion length ranging from 1.2 micron in defect free regions to below 0.1 gm at the center of large defects. In addition, measurements on p-type 6H SiC resulted in electron diffusion lengths ranging from 1.42 micron to 0.8 micron.

Tabib-Azar, Massood↗