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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Heterogeneous Integration Technologies for High-temperature, High-density, Low-profile Power Modules of Wide Bandgap Devices in Electric Drive Applications (Final Technical Report)

The goal of this project is to develop packaging technologies for making high-temperature, high-density, and low-profile wide-bandgap (WBG) power electronics modules for electric drives. These modules are aimed at enabling the DOE’s University Consortium to reach its 2025 inverter targets of ≥ 100 kW/L and ≤ 2.7 $/kW. The specific objectives are to: design and fabricate SiC half-bridge power modules with double-sided cooling and parasitic inductances < 5 nH, heat flux density > 400 W/cm 2 , and working junction temperature of 200 o C; design, fabricate, and deliver a gate driver with double-sided cooled modules for the construction of a 100 kW/L inverter at Oak Ridge National Lab; and design and prototype intelligent gate drivers with integrated current sensor and a low-profile DC-DC power supply with air-core transformer for testing power modules at 200 o C junction temperature. We followed an iterative technical approach of design, simulation, fabrication, and testing of various versions of modules, current sensors, and power supply. The state-of-the-art silicon carbide devices rated at 1.2 kV and 149 A were packaged by sintered-silver bonding on an aluminum nitride direct-bond-copper substrate for high thermal conductivity, high working temperature, and high joint reliability. Porous silver posts were used to interconnect the device’s source pads to the other direct-bond-copper substrate for low mechanical stresses, ease of manufacturing, and double-sided cooling. A current sensor based on package parasitic inductance was developed to measure switching current. A dynamic feedback scheme was developed to compensate the effect of parasitic resistance and temperature variation. A constant-current class-E dc-dc converter with air-core transformer was developed. Air-core transformer was used due to the unavailability of magnetic core at high temperatures. Gate driver and power supply were integrated with the double-side cooled, high temperature SiC power modules for testing the modules at 200 o C junction temperature. Double-pulse and continuous testing of the integrated technologies validated the design and fabrication of the three component technologies. Throughout the project, we overcame the challenge for design verification caused by low prototyping yield, which then helped train the graduate students, the future workforce, to learn the engineering know-how for low-cost manufacturing of reliable products. Below is a summary of the major accomplishments of this project: development of a prototyping process for fabricating double-side cooled (1200 V, 149 A) SiC phase-leg modules capable of working to 200 o C Tj; simulation and experimental verification of the improvement of thermo-mechanical reliability of the double-side cooled SiC phase-leg module by using rigid encapsulant; design and experimental validation of a current sensor based on package parasitic inductance and a compensation solution for eliminating the effect of parasitic resistance; design and experimental validation of a low-profile power supply with six-output air-core transformer for gate driver; functional demonstration of a SiC phase-leg module integrated with its gate driver, current sensor, and an air-core power supply at 200 o C Tj in a double-pulse switching test setup and Buck converter continuous test setup; successful completion of six PhD and two MS students who are or will work at Apple Inc., Tesla Inc., Wolfspeed Inc., Microchip Inc., Monolithic Power Systems Inc., and LG Magna Inc.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2024

2024 OES-Environmental 2024 State of the Science Report, Chapter 9: Beyond Single Marine Renewable Energy Devices: A System-wide Effects Approach

Global expansion of renewable energy, including marine renewable energy (MRE) technology development is necessary to mitigate the effects of climate change, facilitate a sustainable transition from carbon-based energy sources, and satisfy national energy security needs using locally produced electricity (European Commission 2022; IPCC 2023; IRENA 2020). As MRE engineering and research continue to focus on designing devices for deployment in nearshore and offshore waters around the world, researchers are also examining potential environmental effects on marine animals, habitats, and ecosystem processes. To date, the focus has been on interactions between small numbers of MRE devices (1-6) and the environment, such as collisions between animals and turbine blades, the effects of underwater noise and electromagnetic field (EMF) emissions, changes in habitats and oceanographic processes, risk of entanglement of animals, and displacement of animals (Boehlert & Gill 2010; Copping & Hemery 2020) (see Chapter 3).

16 TIDAL AND WAVE POWER↗
DOE OSTI2024

Laboratory Testing of the Temperature Sensor Qualification Device

The Temperature sensor Qualification Device (TQD) has been developed and tested under laboratory conditions to evaluate its thermal performance and the reliability of its retractable sensor system. The TQD is designed to provide an isothermal environment for temperature sensors in both test and reference zones during irradiation experiments. Initial testing revealed minimal radial and azimuthal temperature variations but identified a significant axial gradient. To address this, design modifications were implemented, including enhanced insulation and the addition of a small heater at the device's top. These changes are expected to produce a more uniform axial temperature profile, though further testing is recommended prior to irradiation. The retractable sensor mechanism was rigorously tested, achieving 1,350 cycles at room temperature and 332 cycles at 400°C before failure. The primary failure mechanism was the thermocouple becoming stuck in the wire guide or capillary tube. Based on these results, design improvements were proposed, such as incorporating a load cell for force monitoring and a stepper motor for precise sensor positioning.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Simulating Superconducting Devices in Novel Materials Using the G4CMP Simulation Toolkit

Understanding the kinematics of phonons and charge propagation in superconducting devices is crucial for conducting low-threshold dark matter searches and minimizing correlated errors in superconducting qubits. For nearly a decade, the Geant4 Condensed Matter Physics (G4CMP) package, originally developed for the Cryogenic Dark Matter Search (CDMS) experiment, has been limited to simulating charge and phonon transport in silicon and germanium materials. In this work, we have expanded the capabilities of G4CMP to include novel substrate materials such as sapphire (Al2O3), Gallium Arsenide (GaAs), Lithium Fluoride (LiF), Calcium Tungstate (CaWO4), and Calcium Fluoride (CaF2). We demonstrate the use of this toolkit in generating phonon transport properties for these materials and compare the results with experimentally determined values where available. Additionally, we explore the performance of superconducting devices utilizing these materials.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2025

Atoms-to-devices models for post-irradiation annealing kinetics in III-V semiconductors

Understanding atomic displacement damage and propagating this understanding into validated defect-aware radiation damage models is a critical step toward achieving predictive, atoms-to-systems assessment of radiation vulnerabilities of microelectronics. These models are essential for evaluating the performance and reliability of nuclear stockpile components or space-based electronics (satellites). The goal of this project was to bridge a fundamental science gap between defect spectroscopies and atomistic modeling of radiation-induced defects on the one hand, and simulations of device response on the other hand, to develop predictive defect-aware damage models for high-fidelity device simulations of radiation-damaged III-V semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Optimize the Autonomous Sensor Fish Device for Understanding Interactions of Aquatic Animals with Marine and Hydrokinetic and Hydro Systems (CRADA 476) Final Report

This project at the Pacific Northwest National Laboratory (PNNL) enhances our understanding of how aquatic life interacts with marine renewable energy (MRE) and hydropower systems through the development and testing of advanced sensor technology. The Marine Sensor Fish (MSF) and its smaller variants, the Sensor Fish Mini (SF Mini) and Flexible Sensor Fish (FSF), measure critical environmental stressors, such as shear forces, pressure changes, and strike impacts, that are essential for assessing the risks posed by energy devices, including tidal turbines, hydropower installations, and other MRE infrastructure. Rigorous field testing has shown that these tools are effective in capturing detailed data on turbulence, pressure variations, strike impacts, and other stressors near these devices, providing valuable insights into the conditions faced by aquatic species. Economically, these tools offer renewable energy developers a practical solution for streamlining environmental assessments and ensuring regulatory compliance, ultimately reducing costs associated with evaluating and mitigating ecological impacts. This research also benefits the public by promoting the growth of renewable energy sources that protect aquatic ecosystems, advancing both sustainable energy production and environmental stewardship.

13 HYDRO ENERGY↗
DOE OSTI2026

Sapphire Substrate Trenching to Advance Superconducting High-Coherence Quantum Devices

Achieving longer coherence times in superconducting qubits is essential for advancing quantum information processing and enabling scalable quantum computing. This work presents an innovative fabrication strategy focused on sapphire trenching of the substrate of superconducting high-coherence quantum devices, developed by the SQMS Nanofabrication Taskforce in collaboration with the materials characterization team. In this talk, we present a method to efficiently and consistently trench into the sapphire substrate, without compromising the surface roughness or profile of the etched sapphire. In the literature, trenching in the substrate has been shown to decrease losses, unwanted coupling and thermal stress. Sapphire’s strong covalent bonds make it harder to etch compared to silicon, yet it is more favorable for high-coherence quantum devices due to its lower dielectric losses. This innovative technique opens new possibilities for superconducting qubit fabrication: we fabricated high coherence qubit chips on sapphire substrates with trenching, to demonstrate that it will help pushing towards higher coherence times. By integrating this work with ongoing junction process optimization, design innovation, materials characterization and exploration, we outline a clear pathway toward transmon coherence times reaching millisecond scales and beyond.

Garattoni, S. [Fermilab]↗
DOE OSTI2026

Sapphire Substrate Trenching to Advance Superconducting High-Coherence Quantum Devices

Achieving longer coherence times in superconducting qubits is essential for advancing quantum information processing and enabling scalable quantum computing. This work presents an innovative fabrication strategy focused on sapphire trenching of the substrate of superconducting high-coherence quantum devices, developed by the SQMS Nanofabrication Taskforce in collaboration with the materials characterization team. In this talk, we present a method to efficiently and consistently trench into the sapphire substrate, without compromising the surface roughness or profile of the etched sapphire. In the literature, trenching in the substrate has been shown to decrease losses, unwanted coupling and thermal stress. Sapphire’s strong covalent bonds make it harder to etch compared to silicon, yet it is more favorable for high-coherence quantum devices due to its lower dielectric losses. This innovative technique opens new possibilities for superconducting qubit fabrication: we fabricated high coherence qubit chips on sapphire substrates with trenching, to demonstrate that it will help pushing towards higher coherence times. By integrating this work with ongoing junction process optimization, design innovation, materials characterization and exploration, we outline a clear pathway toward transmon coherence times reaching millisecond scales and beyond.

Garattoni, S. [Fermilab]↗
DOE OSTI2026

Beamline Device Designators

LAMP is to replace the front-end of LANSCE. Therefore, the device designators for LAMP needs approval from LANSCE. This document defines the agreed upon device designator names to be used in LAMP and in the prototype beamline LAMP in ADEF Tunnel (LAT).

43 PARTICLE ACCELERATORS↗
DOE OSTI2026

PLC Integration for the Horn A Magnetic Field Mapping Device

This presentation summarizes the integration of a programmable logic controller (PLC) into the Horn A magnetic field mapping device for the Long-Baseline Neutrino Facility (LBNF). The device is used to position magnetic field probes along the centerline of the Horn A inner conductor to verify that the magnetic field within this region is approximately zero. The presentation covers the PLC hardware and electrical integration, stepper motor and encoder control, ladder logic development, mechanical integration, and system testing. Results include successful bidirectional motion and encoder feedback for the translation and rotation axes, as well as characterization of translational motion for repeatable probe positioning.

Bitakis, Kayla [Unlisted, US, IL]↗
DOE OSTI2025

Evaluation of fluxon synapse device based on superconducting loops for energy efficient neuromorphic computing

With Moore’s law nearing its end due to the physical scaling limitations of CMOS technology, alternative computing approaches have gained considerable attention as ways to improve computing performance. Here, we evaluate performance prospects of a new approach based on disordered superconducting loops with Josephson-junctions for energy efficient neuromorphic computing. Synaptic weights can be stored as internal trapped fluxon states of three superconducting loops connected with multiple Josephson-junctions (JJ) and modulated by input signals applied in the form of discrete fluxons (quantized flux) in a controlled manner. The stable trapped fluxon state directs the incoming flux through different pathways with the flow statistics representing different synaptic weights. We explore implementation of matrix–vector-multiplication (MVM) operations using arrays of these fluxon synapse devices. We investigate the energy efficiency of online-learning of MNIST dataset. Our results suggest that the fluxon synapse array can provide ~100× reduction in energy consumption compared to other state-of-the-art synaptic devices. This work presents a proof-of-concept that will pave the way for development of high-speed and highly energy efficient neuromorphic computing systems based on superconducting materials.

42 ENGINEERING↗
DOE OSTI2025

Multiple-amplifier sensing charged-coupled device: model and improvement of the node removal efficiency

The multiple-amplifier sensing charge-coupled device (MAS-CCD) has emerged as a promising technology for astronomical observation, quantum imaging, and low-energy particle detection due to its ability to reduce the readout time for the same readout noise level compared with its predecessor, the skipper-CCD, by reading out the same charge packet through multiple inline amplifiers. Previous works identified a new parameter in this sensor, called node removal inefficiency (NRI), related to inefficiencies in charge transfer and residual charge removal from the sense node of each amplifier after readout. These inefficiencies can lead to distortions in the measured signals similar to those produced by the charge transfer inefficiencies in standard CCDs. We introduce more details in the mathematical model of the NRI mechanism and provide techniques to quantify its magnitude from the measured data. It also proposes a new operation strategy that significantly reduces its effect with minimal alterations of the timing sequences or voltage settings for the other signals of the sensor. The proposed technique is demonstrated experimentally on a 16-amplifier MAS-CCD. At the same time, the experimental data demonstrate that this approach minimizes the NRI effect to levels comparable with other sources of distortion such as the charge transfer inefficiency in scientific devices.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

An Advanced Cooling Device for Concentrated Photovoltaic Systems

Concentrated photovoltaics (CPV) have the potential to significantly enhance the energy conversion utilization of solar panels and reduce solar generation costs, making them a crucial area of advancement in solar power generation technology. However, the concentration of sunlight can lead to overheating of solar panels, resulting in a notable reduction in both the efficiency of solar power generation and the lifespan of the panels. This challenge remains the predominant technical hurdle that hinders the application of concentrated photovoltaic power generation technology. In this study, we propose a new cooling method for concentrated photovoltaic power generation systems via an integrated approach of incorporating Phase-Change Thermal Storage (PCTS) and Thermoelectric Generator (TEG) technology. This new method not only enhances the overall system's electricity generation efficiency but also effectively resolves the technical challenge of concentrated photovoltaic panel overheating issues, ensuring the continuity of concentrated photovoltaic power generation and extending the lifespan of solar panels and their components. In order to make full use of the wasted heat generated by photovoltaic power generation and effectively improve the power generation efficiency of the system, this work developed a phase change heat storage device based on a phase change material. This device uses the temperature difference between day and night to recover wasted heat from photovoltaic power generation. Through integration with the thermoelectric power generation system, thermal energy can be converted into electrical energy. In addition, the Peltier effect of thermoelectric materials is used to construct a photovoltaic panel overheating protection system, which significantly improves the reliability and service life of the system.

Gou, Yimeng↗
DOE OSTI2024

Qubit devices comprising one or more polycrystalline or single crystalline spin-triplet superconductors

A qubit device may include a closed loop comprising one or more polycrystalline spin-triplet superconductors. The closed loop may maintain a half-quantum magnetic flux in a ground state. A qubit device may include a closed loop comprising one or more single crystalline spin-triplet superconductors connected by one or more s-wave superconductors. The closed loop may maintain a half-quantum magnetic flux in a ground state.

Li, Yufan↗
DOE OSTI2024

Method and device for detection of condition of brushless motors and generators

A method and device for determining the position of a rotor in a brushless motor is provided. The method generally includes: injecting electrical signals into a stator of the brushless motor; measuring scattering parameters reflected back from the stator, wherein the scattering parameters are influenced by the near-field dynamics impaired by the motor; and comparing the measured scattering parameters to a predetermined data set of scattering parameters for known rotor positions to determine the position of the rotor. The method and device is also suitable for determining a condition of a motor or a generator.

Haupt, Justine Elaine↗
DOE OSTI2024

Two-junction photovoltaic devices

The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.

Steiner, Myles Aaron↗
DOE OSTI2024

Systems and methods for organic semiconductor devices with sputtered contact layers

Systems and methods for organic semiconductor devices with sputtered contact layers are provided. In one embodiment, an organic semiconductor device comprises: a first contact layer comprising a first sputter-deposited transparent conducting oxide; an electron transport layer interfacing with the first contact layer; a second contact layer comprising a second sputter-deposited transparent conducting oxide; a hole transport layer interfacing with the second contact layer; and an organic semiconductor active layer having a first side facing the electron transport layer and an opposing second side facing the hole transport layer; wherein either the electron transport layer or the hole transport layer comprises a buffering transport layer.

Hammond, Scott R.↗