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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Additive Manufacturing of Coreless Flyback Transformers Using Aerosol Jet Printing and Electrochemical Deposition

An additive manufacturing approach combining aerosol jet printing (AJP) and electrodeposition opens a new pathway to the production of lightweight coreless flyback transformer devices for power electronics. AJP of seed layers with resolution on the order of 30 μm is combined with electrodeposition of Cu and Ni for decreased resistance. This combined approach addresses known shortcomings of AJP and electrodeposition. Nanoparticle inks used in AJP of metals have low conductivity versus bulk materials due to their high grain boundary resistance. There is a lack of readily available high-resolution patterning techniques for electrodeposition outside of expensive clean-room-based lithography techniques. Combining these two techniques enables the patterning of high-resolution, high-conductivity components. Here in this manuscript, we report on the construction of coreless flyback transformers consisting of two-layer primary and two-layer secondary spiral inductors separated by layers of a printed UV-curable dielectric. An input voltage of 17 V at 400 kHz was amplified to an output of 1250 V corresponding to a gain of 73.5. COMSOL modeling at the individual inductor level and at the transformer level was used to compare expected inductance, equivalent series resistance (ESR), and coupling with experimentally measured values.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Broadband, millimeter-wave antireflection coatings for large-format, cryogenic aluminum oxide optics

Here, we present two prescriptions for broadband (~77 -252 GHz), millimeter-wave antireflection coatings for cryogenic, sintered polycrystalline aluminum oxide optics: one for large-format (700 mm diameter) planar and plano–convex elements, the other for densely packed arrays of quasi-optical elements—in our case, 5 mm diameter half-spheres (called “lenslets”). The coatings comprise three layers of commercially available, polytetrafluoroethylene-based, dielectric sheet material. The lenslet coating is molded to fit the 150 mm diameter arrays directly, while the large-diameter lenses are coated using a tiled approach. We review the fabrication processes for both prescriptions, then discuss laboratory measurements of their transmittance and reflectance. In addition, we present the inferred refractive indices and loss tangents for the coating materials and the aluminum oxide substrate. We find that at 150 GHz and 300 K the large-format coating sample achieves (97±2)% transmittance, and the lenslet coating sample achieves (94±3)% transmittance.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Influence of the Graft Length on Nanocomposite Structure and Interfacial Dynamics

Both the dispersion state of nanoparticles (NPs) within polymer nanocomposites (PNCs) and the dynamical state of the polymer altered by the presence of the NP/polymer interfaces have a strong impact on the macroscopic properties of PNCs. In particular, mechanical properties are strongly affected by percolation of hard phases, which may be NP networks, dynamically modified polymer regions, or combinations of both. In this article, the impact on dispersion and dynamics of surface modification of the NPs by short monomethoxysilanes with eight carbons in the alkyl part (C 8 ) is studied. As a function of grafting density and particle content, polymer dynamics is followed by broadband dielectric spectroscopy and analyzed by an interfacial layer model, whereas the particle dispersion is investigated by small-angle X-ray scattering and analyzed by reverse Monte Carlo simulations. NP dispersions are found to be destabilized only at the highest grafting. The interfacial layer formalism allows the clear identification of the volume fraction of interfacial polymer, with its characteristic time. The strongest dynamical slow-down in the polymer is found for unmodified NPs, while grafting weakens this effect progressively. The combination of all three techniques enables a unique measurement of the true thickness of the interfacial layer, which is ca. 5 nm. Finally, the comparison between longer (C 18 ) and shorter (C 8 ) grafts provides unprecedented insight into the efficacy and tunability of surface modification. It is shown that C 8 -grafting allows for a more progressive tuning, which goes beyond a pure mass effect.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Dielectric catastrophe at the Wigner-Mott transition in a moiré superlattice

The bandwidth-tuned Wigner-Mott transition is an interaction-driven phase transition from a generalized Wigner crystal to a Fermi liquid. Because the transition is generally accompanied by both magnetic and charge-order instabilities, it remains unclear if a continuous Wigner-Mott transition exists. Here, we demonstrate bandwidth-tuned metal-insulator transitions at fixed fractional fillings of a MoSe 2 /WS 2 moiré superlattice. The bandwidth is controlled by an out-of-plane electric field. The dielectric response is probed optically with the 2s exciton in a remote WSe 2 sensor layer. The exciton spectral weight is negligible for the metallic state with a large negative dielectric constant. It continuously vanishes when the transition is approached from the insulating side, corresponding to a diverging dielectric constant or a ‘dielectric catastrophe’ driven by the critical charge dynamics near the transition. Our results support the scenario of continuous Wigner-Mott transitions in two-dimensional triangular lattices and stimulate future explorations of exotic quantum phases in their vicinities.

42 ENGINEERING↗
DOE OSTI2025

Interfacial oxide and other species in trimethylaluminum-pretreated atomic layer deposition-Al 2 O 3 /GaN characterized by sputter-assisted ToF-SIMS

Deposition techniques, like atomic layer deposition (ALD), are used to form high-quality dielectrics for GaN-based metal–oxide–semiconductor (MOS) gate structures due to the lack of a reliable thermal oxide in GaN. Moreover, interfacial GaO x from pre-existing native oxides is thought to adversely impact channel carrier dynamics and induce undesired threshold voltage shifts in GaN-based MOS gate structures. Exposure of the GaN surface to the trimethylaluminum (TMA) precursor prior to standard alumina ALD decreases the native oxide layer on GaN, but the extent of chemical modification has not been well studied in the context of interface composition in a MOS gate structure. Herein, we compare annealed 55 nm Al 2 O 3 dielectric films on GaN grown using either a water-first ALD process or a process including sequential pulses of TMA immediately before the initiation of Al 2 O 3 ALD. Time-of-Flight Secondary Ion Mass Spectrometry measures differences in the interfacial GaO x content between each ALD film. Here, it also detects surface contaminant species like Si, F, S, and C. Furthermore, we report the formation of an AlN species at the Al 2 O 3 /GaN interface, which is more prominent for the film grown using the TMA pre-pulse step. In general, this work demonstrates that the TMA pre-pulse step is an effective strategy for cleaning substrate surfaces prior to ALD.

Atomic layer deposition↗
DOE OSTI2020

Density functionals combined with van der Waals corrections for graphene adsorbed on layered materials

Standard density functionals like Perdew-Burke-Ernzerhof (PBE) or Strongly Constrained and Appropriately Normed (SCAN) need a correction to account for long-range van der Waals (vdW) interaction. The damped Zaremba-Kohn model (dZK) starts from a formula for the vdW interaction of a distant atom with a solid surface, both with known dielectric properties, damps this formula at short range, and then treats an adsorbed molecule or atomic layer as a collection of renormalized atoms. Here, we extend this model to graphene adsorbed on semiconducting layered materials [bulk graphite and hBN, and multilayer transition metal dichalcogenides (TMD)] by including the C 4 asymptotic term and multiple electrostatic image effects due to the two surfaces of the substrate slabs in the vdW calculations. The resulting SCAN-vdW-dZK and PBE-vdW-dZK give approximately the same results for the systems considered here, in agreement with available reference values. The predicted binding energies are roughly 25% lower than those from SCAN+rVV10 (revised Vydrov and Van Voorhis 2010), and ~15% lower than those from PBE+rVV10. Since SCAN+rVV10 usually overbinds, the predicted binding energies by SCAN-vdW-dZK and PBE-vdW-dZK are expected to be closer to the true values. The predicted equilibrium binding distances from SCAN-vdW-dZK and PBE-vdW-dZK are slightly larger (~ 0.1 Å) than those from SCAN+rVV10, and close to those from SCAN. The binding energy depends upon the number of substrate layers more strongly in vdW-dZK than in rVV10. The C 4 -term contributions can be 40% of the total vdW interactions, and the C 5 term contributes about 10%. The effects of images and the back surfaces of slabs can contribute about 4–10%. The vdW interaction energy power laws from the vdW-dZK model for graphene adsorbed on multilayer MoS 2 show slowly varying decay to the pairwise exponent –4 with increasing separation $\textit{D}$, very similar to those obtained from the random-phase approximation and renormalization group approaches by Ambrosetti et al. Both the PBE-vdW-dZK and SCAN-vdW-dZK give a greater increase in interlayer binding energy when the TMD substrate changes from monolayer to four-layer for the graphene/TMD adsorption systems. This is consistent with the relevant electron-energy-loss spectroscopy experimental results showing increased dielectric response from the substrate with increasing substrate layer number.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Chip-integrated metasurface full-Stokes polarimetric imaging sensor

Abstract Polarimetric imaging has a wide range of applications for uncovering features invisible to human eyes and conventional imaging sensors. Chip-integrated, fast, cost-effective, and accurate full-Stokes polarimetric imaging sensors are highly desirable in many applications, which, however, remain elusive due to fundamental material limitations. Here we present a chip-integrated Meta surface-based Full-Stokes Polar imetric Im aging sensor (MetaPolarIm) realized by integrating an ultrathin (~600 nm) metasurface polarization filter array (MPFA) onto a visible imaging sensor with CMOS compatible fabrication processes. The MPFA is featured with broadband dielectric-metal hybrid chiral metasurfaces and double-layer nanograting polarizers. This chip-integrated polarimetric imaging sensor enables single-shot full-Stokes imaging (speed limited by the CMOS imager) with the most compact form factor, records high measurement accuracy, dual-color operation (green and red) and a field of view up to 40 degrees. MetaPolarIm holds great promise to enable transformative applications in autonomous vision, industry inspection, space exploration, medical imaging and diagnosis.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Harnessing emergent multiple scattering resonances in a photonic glass structure for photoelectrochemical energy conversion

Light trapping nanostructures are often necessary to improve carrier collection yields in semiconductor photoelectrodes with intrinsically poor electron transport. Photonic crystal templates can generate tailorable light trapping via periodic and precise nanostructure, though this is not a scalable strategy for photoelectrochemical (PEC) applications. It is therefore critical to identify alternative mechanisms for light trapping that tolerate disorder. Light trapping in disordered media is generated by the diffusive transport caused by multiple scattering. In some cases, multiple scattering can generate resonances that resemble those observed in photonic crystals. While resonant multiple scattering is a disorder tolerant light trapping mechanism, it is unclear if the effect is sufficiently adaptable, or even useful, for PEC applications. Here, we describe a photonic omission glass, a nanostructure that can controllably induce resonances in multiple scattering transport. We characterized the emergence of these resonances after coating a disordered SiO 2 colloidal structure with a layer of TiO 2 , which functions both as dielectric contrast and as a light absorbing semiconductor. We show in finite element simulations and spectroscopic characterization that the resonant multiple scattering effect improves light trapping near the interface between the structure and the bulk electrolyte. This effect, coupled with the increased electrochemically active surface area, results in a hierarchically structured TiO 2 photoanode with orders of magnitude higher photocurrents compared to an equivalent planar photoanode for PEC reactions such as alkaline water oxidation. We show that controlling this resonant multiple scattering effect can be advantageous for improving PEC energy conversion in disordered photoelectrodes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Characterization of Microwave Loss Using Multimode Superconducting Resonators

Measuring the losses arising from different materials and interfaces is crucial to improving the coherence of superconducting quantum circuits. Although this has been of interest for a long time, current studies can either only provide bounds to those losses, or require several devices for a complete characterization. In this work, we introduce a method to measure the microwave losses of materials and interfaces with a single multi-mode superconducting resonator. We demonstrate a formalism for analyzing the loss sensitivity of multi-mode systems and discuss the design strategies of multi-mode resonators for material loss studies. We present two types of multi-mode superconducting resonators for the study of bulk superconductors: the forky whispering-gallery-mode resonator (FWGMR) and the ellipsoidal cavity. We use these resonators to measure the surface dielectric, conductor, and seam losses of high-purity (5N5) aluminum and aluminum alloy (6061), as well as how they are affected by chemical etching, diamond turning, and thin-film coating. Here, we find that chemical etching and diamond turning reduce both the surface dielectric and conductive losses of high-purity aluminum, but provide no appreciable improvement to the seam. Coating the surfaces of diamond-turned aluminum alloys with e-beam evaporated or sputtered aluminum thinfilms significantly reduces all three losses under study. In addition, we study the effect of chemical etching on the surface of high-purity aluminum using transmission electron microscopy (TEM) and find that the chemical etching process creates a thinner and more uniform oxide layer, consistent with the observed improvement in the surface dielectric loss.

25 ENERGY STORAGE↗
DOE OSTI2025

Building epsilon near zero materials from layered uniaxial metamaterials

Recently, there has been an explosion of activity in the fields of optics and photonics with the advent of fabrication techniques which enable the design of metamaterials which possess properties not encountered in the natural world. In this work, we are concerned with zero permittivity materials and a new scheme to design metamaterials for which all components of the dielectric tensor are approximately zero. Our approach involves the alternate layering of many, very thin, slices of two constituent metamaterials, a uniaxial layered medium and a uniaxial nanowire array. With a simple optimization strategy we demonstrate a candidate configuration which very nearly satisfies our design goal of zero permittivity.

Gray, Stephen K. [Argonne National Laboratory (ANL↗
DOE OSTI2026

Analysis of the electrical double layer using electrochemical X-ray photoelectron spectroscopy

The element-sensitivity of X-ray spectroscopies offers the potential to disentangle the individual chemistries of water, ions, and adsorbates at the electrode-electrolyte interface in an element-by-element manner. However, targeted experimental design is needed to establish interface-sensitive in situ X-ray spectroscopy in a realistic electrochemical environment. Here, we demonstrate how electrochemical X-ray photoelectron spectroscopy (EC-XPS) in the dip-and-pull geometry can be used to specifically probe the behavior of ions in the electrical double layer. Taking the case study of a polycrystalline Au foil in 50 mM KClO 4 electrolyte, we tracked the electrochemical response of interfacial K + cations across a broad potential range. We show how, in combination with modeling, key parameters such as the potential of zero charge (PZC), ion packing behavior, dielectric saturation, and the electrostatic potential decay in the double layer can be extracted from the data. Importantly, we also analyze how the experimental conditions and non-idealities can influence the results and put forward criteria for reliable experimentation and data analysis.

Dip-and-pull↗
DOE OSTI2020

Local negative permittivity and topological phase transition in polar skyrmions

Topological solitons such as magnetic skyrmions have drawn attention as stable quasi-particle-like objects. The recent discovery of polar vortices and skyrmions in ferroelectric oxide superlattices has opened up new vistas to explore topology, emergent phenomena and approaches for manipulating such features with electric fields. Using macroscopic dielectric measurements, coupled with direct scanning convergent beam electron diffraction imaging on the atomic scale, theoretical phase-field simulations and second-principles calculations, we demonstrate that polar skyrmions in (PbTiO 3 ) n /(SrTiO 3 ) n superlattices are distinguished by a sheath of negative permittivity at the periphery of each skyrmion. This enhances the effective dielectric permittivity compared with the individual SrTiO 3 and PbTiO 3 layers. Moreover, the response of these topologically protected structures to electric field and temperature shows a reversible phase transition from the skyrmion state to a trivial uniform ferroelectric state, accompanied by large tunability of the dielectric permittivity. Pulsed switching measurements show a time-dependent evolution and recovery of the skyrmion state (and macroscopic dielectric response). The interrelationship between topological and dielectric properties presents an opportunity to simultaneously manipulate both by a single, and easily controlled, stimulus, the applied electric field. Polar skyrmions are topologically protected structures that can exist in (PbTiO 3 ) n /(SrTiO 3 ) n superlattices. Here, it is shown that they have negative permittivity at the surface, and that they can undergo a reversible phase transition with large dielectric tunability under an electric field.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Epitaxial Sc x Al 1- x N on GaN exhibits attractive high-K dielectric properties

Epitaxial Sc x Al 1- x N thin films of ~100 nm thickness grown on metal polar GaN substrates are found to exhibit significantly enhanced relative dielectric permittivity (ε r ) values relative to AlN. ε r values of ~17–21 for Sc mole fractions of 17%–25% ( x = 0.17–0.25) measured electrically by capacitance–voltage measurements indicate that Sc x Al 1- x N has the largest relative dielectric permittivity of any existing nitride material. Since epitaxial Sc x Al 1- x N layers deposited on GaN also exhibit large polarization discontinuity, the heterojunction can exploit the in situ high-K dielectric property to extend transistor operation for power electronics and high-speed microwave applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

A native oxide high-κ gate dielectric for two-dimensional electronics

Silicon-based transistors are approaching their physical limits and thus new high-mobility semiconductors are sought to replace silicon in the microelectronics industry. Both bulk materials (such as silicon-germanium and III–V semiconductors) and low-dimensional nanomaterials (such as one-dimensional carbon nanotubes and two-dimensional transition metal dichalcogenides) have been explored, but, unlike silicon, which uses silicon dioxide (SiO 2 ) as its gate dielectric, these materials suffer from the absence of a high-quality native oxide as a dielectric counterpart. This can lead to compatibility problems in practical devices. Here, we show that an atomically thin gate dielectric of bismuth selenite (Bi 2 SeO 5 ) can be conformally formed via layer-by-layer oxidization of an underlying high-mobility two-dimensional semiconductor, Bi 2 O 2 Se. Using this native oxide dielectric, high-performance Bi 2 O 2 Se field-effect transistors can be created, as well as inverter circuits that exhibit a large voltage gain (as high as 150). The high dielectric constant (~21) of Bi 2 SeO 5 allows its equivalent oxide thickness to be reduced to 0.9 nm while maintaining a gate leakage lower than thermal SiO 2 . The Bi 2 SeO 5 can also be selectively etched away by a wet chemical method that leaves the mobility of the underlying Bi 2 O 2 Se semiconductor almost unchanged.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Correlation between the temperature evolution of the interfacial region and the growing dynamic cooperativity length scale

Here, we study experimentally the temperature evolution of the thickness of the interfacial layer, L int (T), between bulk matrices and the surface of nanoparticles in nanocomposites through broadband dielectric spectroscopy. Analyses revealed a power-law dependence between the logarithm of structural relaxation time in the interfacial layer, τ int (T), and the L int (T): ln τ i n t ( T ) / τ 0 ∝ L i n t β ( T ) / T , with τ 0 ~ 10 –12 s, and β index ~0.67 at high temperatures and ~1.7 at temperatures close to the glass transition temperature. In addition, our analysis revealed that the L int (T) is comparable to the length scale of dynamic heterogeneity estimated from previous nonlinear dielectric measurements and the four-point NMR [ξ NMR (T)], with L int (T) ~ ξ NMR (T). These observations may suggest a direct correlation between the L int (T) and the size of the cooperatively rearranging regions and have strong implications for understanding the dynamic heterogeneity and cooperativity in supercool liquids and their role in interfacial dynamics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Electro-Thermo-Mechanical (ETM) Study on Submarine Dynamic Power Cables (SDPC) for Offshore Wind Transmission

Understanding the failure mechanisms of submarine dynamic power cables (SDPC) is critical for innovative design to meet the 2035 cost reduction target of U.S. DOE Floating Offshore Wind Shot. This is important because the current design suffers a significant failure rate in the field. This project conducted a systematic electro-thermo-mechanical (ETM) experimental study on the power cores extracted from a 15kV power cable with three cores of copper conductor, ethylene propylene rubber (EPR) insulation, and continuously corrugated welded aluminum armor (CCWA). An ETM testing system was developed by integrating a high voltage (HV) amplifier, two ceramic heaters, and a rod-plate transverse compression setup into a mechanical testing machine. Increasing temperature from room temperature (RT, 22 degree C) to 90 degree C resulted in the 67% decrease in the failure mechanical load as defined by the dielectric breakdown. Under creep mechanical loading, the dielectric breakdown time was decreased by 70% for a given mechanical load when the specimen temperature increased from RT to 90oC. The failure strain in both monotonic and creep mechanical loading modes was related to the maximum mechanical load applied. Although the dielectric breakdown occurred in the ETM test, the post-test measurement revealed an impressive recovery of electric resistance. The failure analysis on cross section of tested specimens indicated a sizable gap across insulation layer near the area between copper conductor and loading rod, which apparently resulted from online dielectric failure and offline elastic recovery of components including conductor and insulation layer.

17 WIND ENERGY↗
DOE OSTI2024

An Organic, Direct Bonded Copper, Multi-Layered, Ultra-Low Inductance Package for High-Power UWBG MOSFETs

The most common metalized substrates used in high-power switching packages consist of a ceramic layer such as Aluminum Nitride (AlN) sandwiched between two copper layers. Ceramic substrates are used because it has the key characteristic of having high dielectric strength while being thermally conductive. A large drawback to ceramic substrates is that they do not allow for a multi-layered circuit design. By replacing the traditional ceramic substrate with organic direct bonded copper (ODBC) we can open a wide range of possibilities when it comes to power module layout such as multi-layered circuits and double-sided cooling. Both benefits are critical while packaging high-performance Gallium Oxide (Ga2O3) MOSFETs. Because of Ga2O3's relatively poor thermal conductivity, a double-sided cooled package becomes necessary. Therefore, the use of ODBC provides the flexibility to fabricate copper traces carrying much higher currents, and by creating a multi-layered package, we can drastically reduce the parasitic inductance inside the power module. Achieving lower parasitic inductance is critical for an ultra-fast Ga2O3 package to avoid excessive voltage overshoot and ringing. Using ODBC, we have designed novel packages capable of handling the challenges presented by fast Ga2O3 switching. Using multi-physics modeling software, we can validate our design before building the prototype. Due to the simple process parameters needed to work with ODBC, we can rapidly create prototypes without using external vendors. This flexibility allows us to quickly design, build, and validate highly complex switching power modules to accommodate next generation, Ga2O3 switching devices.

ADVANCED PROPULSION SYSTEMS,ENGINEERING↗
DOE OSTI2021

Plasmonic waveguides from Coulomb-engineered two-dimensional metals

Abstract Coulomb interactions play an essential role in atomically-thin materials. On one hand, they are strong and long-ranged in layered systems due to the lack of environmental screening. On the other hand, they can be efficiently tuned by means of surrounding dielectric materials. Thus all physical properties which decisively depend on the exact structure of the electronic interactions can be in principle efficiently controlled and manipulated from the outside via Coulomb engineering. Here, we show how this concept can be used to create novel plasmonic waveguides in metallic layered materials. We discuss how dielectrically structured environments can be utilized to non-invasively confine plasmonic excitations in an unperturbed homogeneous metallic two-dimensional system by modifications of its many-body interactions. We define optimal energy ranges for this mechanism and demonstrate plasmonic confinement within several nanometers. In contrast to conventional functionalization mechanisms, this scheme relies on a purely many-body concept and does not involve any direct modifications to the active material itself.

Materials Science↗