Search NASA⌕ Search

SEARCH · Search NASA

Results for “doping concentration”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Impurity concentrations and surface charge densities on the heavily doped face of a silicon solar cell

Increased solar cell efficiencies are attained by reduction of surface recombination and variation of impurity concentration profiles at the n(+) surface of silicon solar cells. Diagnostic techniques are employed to evaluate the effects of specific materials preparation methodologies on surface and near surface concentrations. It is demonstrated that the MOS C-V method, when combined with a bulk measurement technique, yields more complete concentration data than are obtainable by either method alone. Specifically, new solar cell MOS C-V measurements are combined with bulk concentrations obtained by a successive layer removal technique utilizing measurements of sheet resistivity and Hall coefficient.

Weinberg, I.↗
DOE OSTI2025

Dopant Optimization of Donors in Semiconductor Opening Switches to Eliminate Prepulse

Semiconductor opening switches are solid-state devices capable of delivering nanosecond, hundreds of kilovolts pulses by interrupting kiloamps of current. The interruption of the current occurs in a moderately doped p-region when a high electric field region (HFR) is formed. The HFR occurs because the reverse pumping current cannot be supported by the saturation velocity and majority carrier concentration of the doping level. However, the donor profile also significantly affects the pulse performance. A secondary prepulse occurs if a secondary HFR is formed at the interface of the background n-doping and N+ doping (X n ) . By moving the location of X n deeper into the diode, the effect of the prepulse is reduced. This article investigates the effect of the donor doping profile on the performance metrics of semiconductor opening switches through technology computer-aided design (TCAD) simulations and experimental results. Through a SILVACO TCAD optimization, we designed a P + /p/n - base/n/N + where the intersection of the moderate p-region and intrinsic n-base region (X p ) is at 160 μm and X n is at 220 μm. This profile is fabricated via silicon epitaxy. Experimentally, it is shown that a deep X n (220 μm) compared with a shallow X n (300 μm) reduces the rise time by >5× . In addition, the magnitude of current density during interruption affects the prepulse foot and pulse shape. At lower current densities without the graded donor profile, high peak voltages are not achieved. Comparing the experimental results to the TCAD simulations shows that the model is predictive under high-current densities in the semiconductor opening switch (SOS) regime.

nanosecond pulse power↗
DOE OSTI2023

Optical constants of polycrystalline Al 0.25 Ga 0.75 P and Al 0.9 Ga 0.1 As determined by variable-angle spectroscopic ellipsometry

The optical constants of single-crystal Al x Ga 1-x P and Al x Ga 1-x As have been widely studied at various Al compositions but have not yet been thoroughly investigated as polycrystalline materials. Using variable-angle spectroscopic ellipsometry, we estimate and analyze the optical constants of polycrystalline Al 0.25 Ga 0.75 P and Al 0.9 Ga 0.1 As that were non-epitaxially deposited at deposition temperatures of either 250 or 420 °C, and with various dopant species, dopant concentrations, and V/III flux ratios. Here, for wavelengths of 350–400 nm, decreasing the V/III ratio increases the refractive index of Be-doped polycrystalline Al 0.25 Ga 0.75 P. For wavelengths >500 nm, as the targeted Be dopant concentration increases for polycrystalline Al 0.25 Ga 0.75 P, the amount the extinction coefficient increases and the indirect bandgap decreases depends on the V/III ratio. Furthermore, Si-doped polycrystalline Al 0.25 Ga 0.75 P has significantly smaller extinction coefficient values than when it is Be-doped, for the same V/III ratio and targeted doping concentration, at wavelengths >500 nm. Based on our findings, we hypothesize that the dopant species, dopant concentration, and the V/III ratio dictate various types of defect concentrations, which then affect the optical constants and indirect bandgap of polycrystalline Al 0.25 Ga 0.75 P. Additionally, for wavelengths >500 nm, we find that polycrystalline Al 0.25 Ga 0.75 P and Al 0.9 Ga 0.1 As have the lowest extinction coefficient values when deposited at 420 °C, as opposed to 250 °C. Thus, we hypothesize that the deposition temperature is the most significant factor in dictating the optical constants of these polycrystalline III-Vs. Ultimately, this work demonstrates alternative methods to tune the optical constants of polycrystalline Al 0.25 Ga 0.75 P and Al 0.9 Ga 0.1 As, as opposed to tuning the Al composition.

42 ENGINEERING↗
NASA NTRS1992

Reduced mobility and PPC in In(.20)Ga(.80)As / Al(.23)Ga(.77)As HEMT structure

Transport properties of a pseudomorphic In(.20)Ga(.80)As/Al(.23)Ga(.77)As High Electron Mobility Transistor (HEMT) structure were measured by Hall and SdH techniques. Two samples of identical structures but with different doping levels were compared. Low temperature mobility measurements as a function of concentration coincides with the onset of second subband occupancy, indicating that the decrease in mobility is due to intersubband scattering. In spite of the low Al content (23 percent), large persistent photoconductivity (PPC) was observed in the highly doped sample only, showing a direct correlation between the PPC and doping concentration of the barrier layer.

Schacham, S. E.↗
DOE OSTI2020

Size- and concentration-dependent Eu 2+ /Eu 3+ mixed luminescent characteristics of rare-earth-doped CaF 2 nanoparticles and their monolithic epoxy nanocomposites

CaF 2 is a promising luminescent host material for a wide range of applications, due to its high transparency, non-hygroscopy, low refractive index, low density, low backscattering efficiency, and abundance in nature. Here we report the photoluminescence (PL) and cathodoluminescence (CL) characteristics of rare-earth-doped CaF 2 nanoparticles and their composite monoliths with epoxy with visible emissions. The CaF 2 nanoparticles of ca. 36, 108 and 305 nm were prepared by a facile solution-mixing process and subsequent hydrothermal treatment. As the particle size decreases, the luminescence intensity increases for single-doped particles, while oppositely decreases for codoped particles because of energy transfer. Further, Eu 2+ - and Tb 3+ -codoped CaF 2 nanoparticles exhibit red emission, providing an efficient path for red emission through an energy transfer by Tb 3+ bridging without direct Eu 3+ doping. The effects of size and concentration are found to be pronounced in CL than PL, as the charge transfer between Eu 2+ and Eu 3+ reduces the concentration quenching in CL. The luminescence emission characteristics of epoxy/CaF 2 monoliths are different from those of particles due to the interactions with the epoxy molecules, and thus the energy transfer is hindered in PL while not in CL, enabling them for high-energy irradiation applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Novel niobium-doped titanium oxide towards electrochemical destruction of forever chemicals

Electrochemical advanced oxidative processes (EAOP) are a promising route to destroy recalcitrant organic contaminants such as per- and polyfluoroalkyl substances (PFAS) in drinking water. Central to EAOP are catalysis-induced reactive free radicals for breaking the carbon fluorine bonds in PFAS. Generating these reactive species electrochemically at electrodes provides an advantage over other oxidation processes that rely on chemicals or other harsh conditions. Herein, we report on the performance of niobium (Nb) doped rutile titanium oxide (TiO 2 ) as a novel EAOP catalytic material, combining theoretical modeling with experimental synthesis and characterization. Calculations based on density functional theory are used to predict the overpotential for oxygen evolution at these candidate electrodes, which must be high in order to oxidize PFAS. The results indicate a non-monotonic trend in which Nb doping below 6.25 at.% is expected to reduce performance relative to TiO 2 , while higher concentrations up to 12.5 at.% lead to increased performance, approaching that of state-of-the-art Magnéli Ti 4 O 7 . TiO 2 samples were synthesized with Nb doping concentration at 10 at.%, heat treated at temperatures from 800 to 1100 °C, and found to exhibit high oxidative stability and high generation of reactive oxygen free radical species. The capability of Nb-doped TiO 2 to destroy two common species of PFAS in challenge water was tested, and moderate reduction by ~ 30% was observed, comparable to that of Ti 4 O 7 using a simple three-electrode configuration. We conclude that Nb-doped TiO 2 is a promising alternative EAOP catalytic material with increased activity towards generating reactive oxygen species and warrants further development for electrochemically destroying PFAS contaminants.

99 GENERAL AND MISCELLANEOUS↗
DOE OSTI2021

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

Self-compensation in Ge- and Si-doped Al 0.3 Ga 0.7 N has been investigated in terms of the formation of III vacancy and donor-vacancy complexes. Both Ge- and Si-doped AlGaN layers showed a compensation knee behavior with impurity compensation (low doping regime), compensation plateau (medium doping regime), and self-compensation (high doping regime). A maximum free carrier concentration of 4–5 × 10 19 cm –3 was obtained by Ge doping, whereas Si doping resulted in only half of that value, ~2 × 10 19 cm –3 . A DFT calculation with the grand canonical thermodynamics model was developed to support the hypothesis that the difference in self-compensation arises from the difference in the formation energies of the V III -n•donor complexes relative to their onsite configurations. The model suggested that the V III -2•donor and V III -3•donor complexes were responsible for self-compensation for both Ge- and Si-doped AlGaN. However, a lower free carrier concentration in Si-doped samples was due to a high V III -3•Si concentration, resulting from a lower energy of formation of V III -3•Si.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1986

Photo Hall-effect characterization of closely compensated Ge:Be

The temperature dependence of the free-carrier concentration in germanium doped with the double acceptor Be has been investigated using the photo Hall-effect technique and found to be strongly temperature dependent when the residual shallow impurities are closely compensated. Close compensation of shallow levels was achieved by controlling the concentration of a beryllium-hydrogen acceptor complex A(Be,H) which is present in crystals grown under a H2 atmosphere. This complex can be removed with high-temperature annealing. An increase of up to two orders of magnitude in free-carrier lifetime as a function of temperature is found to occur between 5 and 11 K in closely compensated material due to the population inversion of ionized centers created by optical pumping.

Germer, T. A.↗
DOE OSTI2022

Thermoelectric Performance of the 2D Bi 2 Si 2 Te 6 Semiconductor

Bi 2 Si 2 Te 6 , a 2D compound, is a direct band gap semiconductor with an optical band gap of 0.25 eV, and is a promising thermoelectric material. Single-phase Bi 2 Si 2 Te 6 is prepared by a scalable ball-milling and annealing process and the highly densified polycrystalline samples are prepared by spark plasma sintering. Bi 2 Si 2 Te 6 shows a p-type semiconductor transport behavior and exhibits an intrinsically low lattice thermal conductivity of ~0.48 Wm -1 K -1 (cross-plane) at 573 K. The first-principles density functional theory calculations indicate that such low lattice thermal conductivity is derived from the interactions between acoustic phonons and low-lying optical phonons, local vibrations of Bi, the low Debye temperature and strong anharmonicity result from the unique 2D crystal structure and metavalent bonding of Bi 2 Si 2 Te 6 . The Bi 2 Si 2 Te 6 exhibits an optimal figure of merit ZT of ~0.51 at 623 K, which can be further enhanced by the substitution of Bi with Pb. Pb doping leads to a large increase in power factor S 2 σ, from ~4.0 μWcm -1 K- 2 of Bi 2 Si 2 Te 6 to ~8.0 μWcm -1 K -2 of Bi 1.98 Pb 0.02 Si 2 Te 6 at 775 K, owing to the increase in carrier concentration. Moreover, Pb doping induces a further reduction in the lattice thermal conductivity to ~0.38 Wm -1 K -1 (cross-plane) at 623 K in Bi 1.98 Pb 0.02 Si 2 Te 6 ,. The simultaneous optimization of the power factor and lattice thermal conductivity achieves a peak ZT of ~0.90 at 723 K and a high average ZT of ~0.66 at 400–773 K in Bi 1.98 Pb 0.02 Si 2 Te 6 .

36 MATERIALS SCIENCE↗
DOE OSTI2022

Electro-Optical Characterization of Arsenic-Doped CdSeTe and CdTe Solar Cell Absorbers Doped in-situ During Close Space Sublimation

Most contemporary device models predict that an acceptor concentration of at least 10^16 cm^-3 is required to reach an open circuit voltage of 1 V in polycrystalline CdTe-based solar cells. While copper has traditionally been used as the de facto p-type dopant in polycrystalline cadmium telluride (CdTe) and cadmium selenide telluride (CdSeTe), reaching high acceptor concentrations has proved to be challenging in such devices due to significant dopant compensation. The acceptor concentration in copper-doped CdTe and CdSeTe typically ranges from 10^13 to 10^15 cm^-3 and routinely exhibit low external radiative efficiencies below 0.01%, limiting their implied voltage (i.e., quasi-Fermi level splitting) to approximately 900 mV. As an alternative to copper, this work explores the use of arsenic as a p-type dopant for CdTe and CdSeTe. Using a novel technique in which a thin layer of arsenic-containing material is deposited and used as a reservoir for arsenic to diffuse into a front layer of previously undoped material, this contribution demonstrates that high external radiative efficiencies are achievable, a direct result of combined high acceptor concentrations and long minority-carrier lifetimes in the absorber. This leads to improved implied voltages, and indicates that As-doping represents a promising pathway towards improving the external voltage of CdSeTe/CdTe solar cells.

cadmium telluride↗
NASA NTRS1986

Zirconium, hafnium, and rare earth element partition coefficients for ilmenite and other minerals in high-Ti lunar mare basalts - An experimental study

Partition coefficients were determined for Gd, Lu, Hf and Zr among ilmenite, armalcolite, and synthetic high-Ti mare basaltic melts at temperatures from 1122 deg to 1150 deg, and at oxygen fugacities of IW x 10 exp 0.5, by in situ analysis with an electron microprobe, using samples doped to present concentration levels. Coefficients for Zr were also measured for samples containing 600-1600 ppm Zr using this microprobe. In addition, coefficients were determined for Hf and Zr between chromian ulvospinel and melt, for Hf between pigeonite and melt, and for Lu between olivine and melt by microprobe analysis of samples doped to present levels. Values measured using the microprobe were in agreement with the values measured by analyzing mineral separates from the same run products by isotope dilution. Coefficient values for ilmenite are less than 0.01 for the LREE, are around 0.1 for the HREE, and are several times greater than this for Zr and Hf.

Mckay, G.↗
DOE OSTI2025

Reducing Dark Conductivity of Cesium Tin Halide Perovskites with Donor Doping

The inorganic tin halide perovskites (such as Cs Sn Br 3 and Cs Sn I 3 ) exhibit high hole concentrations, which have been attributed to the presence of intrinsic defects such as cation vacancies. Despite their promise as photovoltaic materials, this high intrinsic conductivity limits deployment. Using hybrid density functional theory, we examine the impact of these intrinsic defects on the electronic properties of Cs Sn Br 3 and Cs Sn I 3 . We find that tin and cesium vacancies have low formation energies, especially under Sn -poor conditions, in agreement with prior work, and that the presence of these native acceptor defects can lead to high hole concentrations. However, effective donor doping of these systems can be obtained via Sc or Y incorporation. These impurities substitute on the Sn site, where they act as single donors. By examining the formation energy of these dopants versus the native defects, we show that Sc or Y doping should lead to a strong compensation, reducing hole concentrations under Sn -rich conditions. Published by the American Physical Society 2025

Lyons, John L. (ORCID:0000000180233055)↗
DOE OSTI2025

Fabrication of nanoporous doped metal oxide coatings via selective infiltration of a block copolymer template: The case of Al-doped zinc oxide

Conductive nanoporous conformal coatings are important for various applications including touchscreens, displays, and electrochromic windows, though design of such coating with controlled porosity and composition remains challenging. We propose a sequential infiltration synthesis (SIS) method for the fabrication of nanoporous conductive aluminum-doped zinc oxide (AZO) films by infiltrating block copolymer (BCP) templates, specifically polystyrene-block-polyvinyl pyridine (PS-b-P4VP), with diethyl zinc and trimethyl aluminum precursors. Tunability of both porosity and electrical conductivity is achieved by precisely controlling the swelling behavior of the polymer templates and adjusting the number of SIS cycles. Further, our results reveal that porosity levels can reach up to 80 %, with resistivity as low as ~7.83 Ωcm. Using conductive atomic force microscopy (C-AFM) and Hall effect measurements, we show that lower concentrations of aluminum doping relative to zinc (around 1: 17) results in higher conductivity of the AZO films. Additionally, AZO is based on zinc oxide (ZnO) which is cost-efficient, abundant and less toxic than commonly used transparent conductive oxides such as indium tin oxide (ITO) and fluorine-doped tin oxide (FTO). Therefore, this novel approach opens new possibilities for creating highly porous, conformal, conductive AZO coatings with customizable porosity and composition, making them ideal candidates for diverse optoelectronic applications.

36 MATERIALS SCIENCE↗
NASA NTRS1987

Ohmic contact formation in semi-insulating GaAs using shallow heavily doped p-type layers

The paper describes a simple, safe, and effective method for forming shallow zinc-doped p-type layers on chromium-doped semiinsulating GaAs, using an open-tube diffusion technique. The resulting peak dopant concentration for the 850-C diffusion was 10 to the 20th/cu cm. The contact resistance of ohmic contacts fabricated on these layers was found to be about 0.00005 ohm/sq cm. The variation of the contact resistance across the wafer reflected the variation of the doping concentration.

Bose, Amitava↗
DOE OSTI2021

Interstitial Nature of Mn 2+ Doping in 2D Perovskites

Halide perovskites doped with magnetic impurities (such as the transition metals Mn 2+ , Co 2+ , Ni 2+ ) are being explored for a wide range of applications beyond photovoltaics, such as spintronic devices, stable light-emitting diodes, single-photon emitters, and magneto-optical devices. However, despite several recent studies, there is no consensus on whether the doped magnetic ions will predominantly replace the octahedral B-site metal via substitution or reside at interstitial defect sites. Here, by performing correlated nanoscale X-ray microscopy, spatially and temporally resolved photoluminescence measurements, and magnetic force microscopy on the inorganic 2D perovskite Cs 2 PbI 2 Cl 2 , we show that doping Mn 2+ into the structure results in a lattice expansion. The observed lattice expansion contrasts with the predicted contraction expected to arise from the B-site metal substitution, thus implying that Mn 2+ does not replace the Pb 2+ sites. Photoluminescence and electron paramagnetic resonance measurements confirm the presence of Mn 2+ in the lattice, while correlated nano-XRD and X-ray fluorescence track the local strain and chemical composition. Density functional theory calculations predict that Mn 2+ atoms reside at the interstitial sites between two octahedra in the triangle formed by one Cl – and two I – atoms, which results in a locally expanded structure. These measurements show the fate of the transition metal dopants, the local structure, and optical emission when they are doped at dilute concentrations into a wide band gap semiconductor.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Computational study of Li3BO3 and Li3BN2 I: Electrolyte properties of pure and doped crystals

Both Li3BO3 and Li3BN2 materials have promising properties for use in all-solid-state batteries and other technologies dependent on electrolytes with significant ionic conductivity. As the first of a two-part study, this paper reports the analysis of detailed simulations of Li ion diffusion in the monoclinic forms of these materials. Using both NEB and MD methods, it is clear that Li ion migration via vacancy mechanisms provides the most efficient ion transport in each material. While the results suggest that interstitial defects in these materials do not play a direct role in Li ion migration, their relative stability seems to enhance vacancy production via the formation of Frenkel-type defects. This may partially explain why the Li ion conductivities computed from MD simulations of samples initially containing a single Li ion vacancy are in reasonable agreement with measured values of this work for Li3BO3 and those reported in the literature for poorly crystalline samples of both materials. The possibility of increasing vacancy concentrations by substitutional doping (F for O in Li3BO3 and C for B in Li3BN2) is also examined, finding simulated conductivities comparable to those of the ideal vacancy model.

Li, Yan↗
DOE OSTI2026

The influence of iron incorporation on the microstructure and crystal chemistry of UO 2 fuel

The incorporation of dopants into UO 2 is of interest for both doped advanced fuel and nuclear forensics research. Suitable forensics dopants, or taggants, for nuclear fuels are ones that do not adversely affect the performance of the parent material while still being traceable during key stages of the fuel’s life cycle. In this paper, we present our efforts to understand the effects of doping UO 2 with Fe 2 O 3 under multiple parameters, such as Fe concentration (0–3000 wppm), sintering temperature (1673 K, 1773 K, and 1973 K), sintering time (2–12 h), and atmosphere (reducing and inert). Here, we investigated densification behavior, microstructure evolution, and lattice defects based on the geometric densities, scanning electron microscopy (SEM), X-ray diffractograms, and Raman spectra. The effect of Fe on the microstructure and crystal chemistry of UO 2 is very complex, especially at the intermediate temperature (1773 K), where we found that densification kinetics are enhanced and that lattice contraction occurs for doping concentrations greater than 1000 wppm Fe.

Crystallography↗