Spectral emissivity of highly doped silicon.
P- and n-type silicon spectral emissivity measured at several temperatures and wavelengths for carrier concentrations and direct current resistivities
Liebert, C. H.↗
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Ni partitioning between diopside and silicate melt - A redetermination by ion microprobe and recognition of an experimental complication
The capabilities of and potential problems with ion microprobe analysis are illustrated in the determination of Ni distribution between silicate melt and diopside as a function of concentration. Samples of diopside and a melt in the albite-anorthite-diopside system were doped with Ni to levels of 5.22 and 1.08 wt % and 1060, 138, 42 and 30 ppm, and with 3 ppm of Ni-63, and characterized by both electron and ion microprobe techniques. Measurements of Ni-62 distribution by the ion probe method give a ratio of 1.87 for the ratio of count rates in the diopsides with the glass, which is slightly lower than the value of 2.05 obtained from beta-track mapping. The measurements required the secondary ion signal to be linear with concentration in the range measured, and a calibration to correct for differential secondary ion yields from different phases. It is found, however, that partition coefficients measured for Ni-58 and Ni-60 are not constant with Ni concentration, probably due to Ni migration during crystallization. The results thus show ion microprobe analyses to be feasible for simultaneous measurements of distributions of more than one element, and of elements inappropriate for beta-track mapping or electron probe analysis.
Steele, I. M.↗
Status of lithium-doped p super plus /n solar cells.
Li doped p-plus/n solar cells optimum design and radiation resistance, noting concentration and room temperature annealing conditions
ANNEALING↗
Characterization of deliberately nickel-doped silicon wafers and solar cells
Microstructural and electrical evaluation tests were performed on nickel-doped p-type silicon wafers before and after solar cell fabrication. The concentration levels of nickel in silicon were 5 x 10 to the 14th power, 4 x 10 to the 15th power, and 8 x 10 to the 15th power atoms/cu cm. It was found that nickel precipitated out during the growth process in all three ingots. Clumps of precipitates, some of which exhibited star shape, were present at different depths. If the clumps are distributed at depths approximately 20 micron apart and if they are larger than 10 micron in diameter, degradation occurs in solar cell electrical properties and cell conversion efficiency. The larger the size of the precipitate clump, the greater the degradation in solar cell efficiency. A large grain boundary around the cell effective area acted as a gettering center for the precipitates and impurities and caused improvement in solar cell efficiency. Details of the evaluation test results are given.
Salama, A. M.↗
Grain-boundary phases in hot-pressed silicon nitride containing Y2O3 and CeO2 additives
Auger electron spectroscopy in conjunction with X-ray powder diffraction and scanning electron microscopy is used to analyze the grain-boundary phases of Y2O3- and CeO2-doped Si3N4 hot-pressed materials in order to demonstrate that the additives concentrate predominantly in the grain boundaries of Si3N4 in the form of various oxynitride phases. A high oxygen content observed in sample fracture surfaces was found to be consistent with the existence of an oxygen-enriched phase in the grain boundaries. The presence of yttrium and cerium in the fracture surfaces and an overall increase in the O/N ratio imply that the additive oxides are predominantly concentrated in the intergranular phases.
Guha, J. P.↗
Infrared absorption study of neutron-transmutation-doped germanium
Using high-resolution far-infrared Fourier transform absorption spectroscopy and Hall effect measurements, the evolution of the shallow acceptor and donor impurity levels in germanium during and after the neutron transmutation doping process was studied. The results show unambiguously that the gallium acceptor level concentration equals the concentration of transmutated Ge-70 atoms during the whole process indicating that neither recoil during transmutation nor gallium-defect complex formation play significant roles. The arsenic donor levels appear at full concentration only after annealing for 1 h at 450 C. It is shown that this is due to donor-radiation-defect complex formation. Again, recoil does not play a significant role.
Park, I. S.↗
Critical review of electrical conductivity measurements and charge distribution analysis of magnesium oxide
The electrical conductivity sigma of MgO single crystals shows a sharp increase at 500-800 C, in particular of sigma surface, generally attributed to surface contamination. Charge Distribution Analysis (CDA), a new technique providing information on fundamental properties that was previously unavailable, allows for the determination of surface charges, their sign and associated internal electric field. Data on 99.99% purity, arc-fusion grown MgO crystals show that mobile charge carriers start to appear in the bulk of the MgO crystals between 200 and 400 C when sigma (measured by conventional techniques) is in t he 10(exp -14) to 10(exp -16) /omega/cm range. Above 500 C, as sigma increases to 10(exp -6) to 10(exp -7)/omega/cm, more charges appear giving rise to a strong positive surface charge supported by a strong internal field. This indicates that charges are generated in the bulk and diffuse to the surface by an internally controlled process. On the basis of their positive sign they are identified as holes (defect electrons). Because of the low cation content of these very pure MgO crystals, theses holes cannnot be associated with transition metal impurties. Instead, they are associated with the O(2-) sublattice, e.g. consist of O(-) states or positive holes. This conclusion is supported by magnetic susceptibility data showing the appearance of 1000 +/- 500 ppm paramagnetic species between 200-500 C. The magnetic data are consistent with strongly coupled, diamagnetic O(-) pairs below 200-500 C, chemically equivalent to peroxy anions, O2(2-), and probably associated with cation vacancies in the MgO matrix. The formation of O2(2-) in arc-fusion grown MgO crystals is very unexpected because of the highly reducing growth conditions. Their presence implies an internal redox reaction involving dissolved 'water' by which OH(-) pairs convert to O2(2-) plus H2 molecules. This redox conversion is supported by mass spectroscopic measurements of the H2 release from highly OH(-)-doped, finely divided MgO and by wet-chemical analysis of its oxidant concentration.
Freund, Friedemann↗
Comparison of OARE Accelerometer Data with Dopant Distribution in Se-Doped GaAs Crystals Grown During USML-1
Experiments were conducted in the crystal growth furnace (CGF) during the first United States Microgravity Laboratory (USML-1), the STS-50 flight of the Space Shuttle Columbia, to determine the segregation behavior of selenium in bulk GaAs in a microgravity environment. After the flight, the selenium-doped GaAs crystals were sectioned, polished, and analyzed to determine the free carrier concentration as a function of position, One of the two crystals initially exhibited an axial concentration profile indicative of diffusion controlled growth, but this profile then changed to that predicted for a complete mixing type growth. An analytical model, proposed by Naumann [R.J. Naumann, J. Crystal Growth 142 (1994) 253], was utilized to predict the maximum allowable microgravity disturbances transverse to the growth direction during the two different translation rates used for each of the experiments. The predicted allowable acceleration levels were 4.86 microgram for the 2.5 micrometers/s furnace translation rate and 38.9 microgram for the 5.0 micrometers/s rate. These predicted values were compared to the Orbital Acceleration Research Experiment (OARE) accelerometer data recorded during the crystal growth periods for these experiments. Based on the analysis of the OARE acceleration data and utilizing the predictions from the analytical model, it is concluded that the change in segregation behavior was not caused by any acceleration events in the microgravity environment.
Moskowitz, Milton E.↗
Defect-Concentration Dependence of Annealing Rate in Silicon
Defect concentration dependence of isothermal annealing rate of electron bombardment induced radiation defects in lithium doped n-type silicon
Fang, P. H.↗
Impurity effects on annealing of radiation defects in silicon.
Annealing temperature of radiation defects in phosphorus doped silicon, discussing isochronal recovery characteristics of solar cells with different donor and oxygen concentrations
Fang, P. H.↗
Research, Development and Fabrication of Lithium Solar Cells, Part 2
The development and fabrication of lithium solar cells are discussed. Several single-step, lithium diffusion schedules using lower temperatures and times are described. A comparison was made using evaporated lithium metal as the lithium source, and greatly improved consistency in lithium concentrations was obtained. It was possible to combine all processing steps to obtain lithium doped cells of high output which also contained adequate lithium to ensure good recoverability.
Iles, P. A.↗
Influence of oxygen on defect production in electron-irradiated, boron-doped silicon
Deep level transient spectroscopy (DLTS) measurements were made on float-zone and crucible-grown, boron-doped silicon irradiated with 1-MeV electrons. The minority carrier trap attributed to a boron-related state, was not seen in low-resistivity, float-zone silicon. However, a new majority carrier trap was observed in these samples. In the case of more lightly doped material the minority carrier trap was present, and its introduction rate was lower in float-zone than in crucible-grown silicon. For 1- and 10-ohm-cm float-zone material that was oxidized during processing, the introduction rates for this trap were comparable to those for crucible-grown silicon. This behavior indicates that the minority carrier trap involves oxygen and that it may be due to a boron-oxygen complex. The majority carrier trap seen in heavily doped, float-zone silicon may also involve boron but not oxygen. Observed trap concentrations suggest that oxygen content in the regions examined by DLTS is affected by processing techniques. Other differences were observed in defect production and annealing behavior of electron-irradiated, float-zone and crucible-grown silicon.
Deangelis, H. M.↗
Morphological evolution and transition at nanoscale in BSTO ceramic materials
Considerable efforts have been devoted for the development of low cost ferroelectric and clean energy storage multifunctional materials. Modification in design and production of a low cost material with well proven process provides pathway for high energy density dielectric energy storage. We studied fluorine doped a commercially well-established material system barium strontium titanate with two different concentrations of dopants and studied the morphological transition and its effect on properties. It was observed that sample with higher concentration transitioned much faster into glassy state, followed by growth of fibers which turned into a self-arranged bird nest type shape. The sample with lower concentration changed slowly into glassy state and only few fibers were farmed. Dielectric was highly dependent on processing methods and shows variation with crystallinity of material, temperature and cooling conditions during processing. In the higher concentration range, we observed nano-scale interface breakdown very similar to that of solid-liquid interface breakdown during crystal growth.
dielectric↗
Chromium Diffusion Doping on ZnSe Crystals
Chromium doped zinc selenide crystal have recently been demonstrated to be a promising material for near-IR room temperature tunable lasers which have an emission range of 2-3 micrometers. In this study a new diffusion doping process has been developed for incorporation of Cr(+2) ion into ZnSe wafers. This process has been successfully performed under isothermal conditions, at temperatures above 800 C. Concentrations in excess of 10(exp 19) Cr(+2) ions/cu cm, an order of magnitude larger than previously reported in melt grown ZnSe material, have been obtained by diffusion doping, as estimated from optical absorption measurements. The diffusivity was estimated to be about 10(exp -8) sq cm/sec using a thin film diffusion model. Resistivity was derived from current-voltage measurements and in the range of 10(exp 13) and 10(exp 16) omega-cm. The emission spectra and temperature dependent lifetime data will also be presented and discussed.
Journigan, Troy D.↗
Experimental approaches for improving SiGe thermoelectric efficiency at JPL
Efforts to improve the thermoelectric efficiency of silicon-germanium alloys are discussed. These efforts are essentially focused on substantially enhancing carrier concentration levels and thus increasing the power factor values of n-type materials. With the help of thermodynamic phase diagram calculations, a combination of various crystal growth and dopant saturation techniques is used for this purpose. Bulk polycrystal growth of double-doped materials is achieved by zone leveling while a new method (the traveling heater method) for high-quality single-crystal growth of SiGe is being developed. Thin films of homogeneous single-crystalline multidoped Si80Ge20 have also been successfully grown from low-temperature melts to investigate combined dopant solid solubility variations. Very high carrier concentration levels were obtained by (P+As)-combined diffusion in zone-leveled and hot-pressed materials. The good overall understanding of doping mechanisms which has been achieved should enable optimization of the thermoelectric properties over this extended carrier concentration range. Reductions in thermal conductivity are being sought by introduction of very small phonon scattering centers (inert material) in the initial powders-precursors of Si-Ge alloys. This approach should benefit both n- and p-type materials.
Borshchevsky, Alex↗
Solar generation and storage of O2 (a 1 delta g)
An investigation was performed of the technical steps required to design a solar powered oxygen-iodine laser. Singlet delta oxygen is formed upon transfer of energy from selected photoexcited dye molecules to ground state molecular oxygen and then is concentrated and stored as an endoperoxide by reaction with an aromatic hydrocarbon. The endoperoxide, when heated, releases singlet oxygen in high yield thus providing a regenerable source of laser fuel. Energy transfer from dye molecules to molecular oxygen was investigated. When dye molecules were adsorbed to polymer substrates it was observed that the dye became embedded in the polymer matrix. Porphin dyes were incorporated into films of 1,4-dimethyl-2-poly(vinylnaphthalene), 2PVN. An endoperoxide was formed when porphin-doped 2PVN was exposed to visible radiation. This demonstrates the possibility of generating singlet oxygen using solar energy and concentrating and storing it in one simple step. Transport of energy by exciton migration in polycrystalline dye films was also investigated.
Twarowski, Allen J.↗
Performance, Defect Behavior and Carrier Enhancement in Low Energy, Proton Irradiated p(+)nn(+) InP Solar Cells
InP p(+)nn(+) cells, processed by MOCVD, were irradiated by 0.2 MeV protons and their performance and defect behavior observed to a maximum fluence of 10(exp 13)/sq cm. Their radiation induced degradation, over this fluence range, was considerably+less than observed for similarly irradiated, diffused junction n p InP cells. Significant degradation occurred in both the cell's emitter and base regions the least degradation occurring in the depletion region. A significant increase in series resistance occurs at the highest fluenc.e. Two majority carrier defect levels, E7 and E10, are observed by DLTS with activation energies at (E(sub C) - 0.39)eV and (E(sub C) - 0.74)eV respectively. The relative concentration of these defects differs considerably from that observed after 1 MeV electron irradiation. An increased carrier concentration in the cell's n-region was observed at the highest proton fluence, the change in carrier concentration being insignificant at the lower fluences. In agreement with previous results, for 1 and 1.5 MeV electron irradiated InP p(+)n junctions, the defect level E10 is attributed to a complex between zinc, diffused into the n-region from the zinc doped emitter, and a radiation induced defect. The latter is assumed to be either a phosphorus vacancy or interstitial. The increased, or enhanced carrier concentration is attributed to this complex acting as a donor.
Weinberg, I.↗
Effect of impurities and processing on silicon solar cells. Volume 1: Characterization methods for impurities in silicon and impurity effects data base
Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. Discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, conventional solar cell I-V techniques, and descriptions of silicon chemical analysis are presented and discussed. The tabulated data include lists of impurity segregation coefficients, ingot impurity analyses and estimated concentrations, typical deep level impurity spectra, photoconductive and open circuit decay lifetimes for individual metal-doped ingots, and a complete tabulation of the cell I-V characteristics of nearly 200 ingots.
Hopkins, R. H.↗