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Reducing Dark Conductivity of Cesium Tin Halide Perovskites with Donor Doping
The inorganic tin halide perovskites (such as Cs Sn Br 3 and Cs Sn I 3 ) exhibit high hole concentrations, which have been attributed to the presence of intrinsic defects such as cation vacancies. Despite their promise as photovoltaic materials, this high intrinsic conductivity limits deployment. Using hybrid density functional theory, we examine the impact of these intrinsic defects on the electronic properties of Cs Sn Br 3 and Cs Sn I 3 . We find that tin and cesium vacancies have low formation energies, especially under Sn -poor conditions, in agreement with prior work, and that the presence of these native acceptor defects can lead to high hole concentrations. However, effective donor doping of these systems can be obtained via Sc or Y incorporation. These impurities substitute on the Sn site, where they act as single donors. By examining the formation energy of these dopants versus the native defects, we show that Sc or Y doping should lead to a strong compensation, reducing hole concentrations under Sn -rich conditions. Published by the American Physical Society 2025
Observation of Weak Counterion Size Dependence of Thermoelectric Transport in Ion Exchange Doped Conducting Polymers Across a Wide Range of Conductivities
Conducting polymers are of interest for a broad range of applications from bioelectronics to thermoelectrics. The factors that govern their complex charge transport physics include the structural disorder present in these highly doped polymer films and the Coulombic interactions between the electronic charge carriers and the dopant counterions. Previous studies have shown that at low doping levels carriers are strongly trapped in the vicinity of the counterions, while at high doping levels charge transport is not limited by Coulombic trapping, which manifests itself in the conductivity being independent of the size of the dopant counterion. Here a recently developed ion exchange doping method is used to investigate the ion size dependence of a semicrystalline polythiophene–based model system across a wide range of conductivities. It is found that the regime in which the charge and thermoelectric transport is not or only weakly dependent on ion size, extends to surprisingly low conductivities. This surprising observation is explained by a heterogeneous doping that involves doping of the amorphous domains to high doping levels first before doping of the ordered, crystalline domains occurs. The study provides new insights into how the thermoelectric physics of conducting polymers evolves as a function of doping level.
Stability and Mobility of Disconnections in Solute Atmospheres: Insights from Interfacial Defect Diagrams
This Letter explores the stability of disconnections (step-dislocation defects) at grain boundaries in binary alloys. We introduce interfacial defect diagrams, derived from atomistic simulations and segregation theory, to predict the stability of disconnections in the temperature-solute concentration phase space and relate it to governing segregation mechanisms. These diagrams reveal multiple stability regimes influenced by solute-induced clustering and pinning effects impacting the thermal migration of disconnections and offering insights into their thermodynamics and kinetic properties.
Probing putative orbital differentiation effects via Eu 2+ spin dynamics in Sr 1-x Eu x Fe 2 As 2
Here, in this work, we report x-ray powder diffraction, elemental analysis, electrical resistivity, magnetic susceptibility, specific heat, and electron spin resonance (ESR) in single crystals of Sr 1-x Eu x Fe 2 As 2 . We observed a breakdown of the previously reported scaling between the Eu 2+ Korringa relaxation rate obtained from ESR and the spin density wave temperature evolution for Sr-rich samples. This result suggests a distinct evolution of the orbital differentiation of the Fe 3d bands along the Sr-based series when compared to the Ba counterpart. We argue that this difference is related to a larger splitting between the structural (tetragonal-to-orthorhombic) and the Fe-driven spin density wave transitions induced by Eu doping in this series. In fact, our results indicate that the two transitions follow an opposite x-Eu dependence for Sr-concentrated samples. Our work shows that Sr 1-x Eu x Fe 2 As 2 series and the comparison with their Ba-based counterparts are exciting platforms to be explored for understanding the interplay among orbital differentiation, magnetism, and structural distortions in the iron pnictides
Probing the electronic properties of gap states near the surface of n -SrTiO 3-δ / i -Si (001) heterojunctions with high sensitivity
We have measured soft x-ray resonant photoemission for the n–SrTiO 3–δ /i–Si(001) (δ=~0.0003) hybrid semiconductor heterojunction with the goal of probing occupied electronic states in the band gap near the surface. By utilizing both swept energy, angle-integrated and fixed-energy, and angle-resolved spectroscopies, we identify the atomic and orbital character of the in-gap state as well as the different electronic phases that contribute to it. Specifically, we isolate the state associated with trapped charge on the n–SrTiO 3–δ surface that causes surface depletion from the localized gap state resulting from electron correlation effects in the complex oxide. Using an x-ray energy close to select dipole allowed TiL 3 → 3d x-ray absorption resonances results in a 40-fold increase in sensitivity. Furthermore, this feature makes photoemission possible when probing electrons from dopants at concentrations as low as a few hundredths of a percent.
Influence of Ga doping on magnetic properties, magnetocaloric effect, and electronic structure of pseudobinary GdZn 1 - x Ga x ( x = 0 - 0.1 )
Here, we explore the impact of introducing IIIA-group element Ga in place of IIB-group element Zn in binary intermetallic GdZn on its magnetic and magnetocaloric properties, as well as explicate the modified electronic band structure of the compound. The magnetic transition temperature of the compound decreases with the increase of Ga concentration in GdZn 1-x Ga x (x = 0–0.1) while the crystal structure (CsCl prototype) and lattice parameters remain unchanged. Our detailed analysis of magnetization and magnetocaloric data conclusively proves that long-ranged magnetic ordering exists in the sample, despite the magnetic interaction considerably weakening with the increase of Ga. The experimental data are rationalized using both a theoretical machine-learning model and first-principle density functional theory. The electronic band structure of GdZn is manifested with some unusual complex features which gradually diminish with Ga doping and the conventional sinusoidal feature of Ruderman-Kittel-Kasuya-Yosida-type interactions also disappears. A mean-field theory model is developed and can successfully describe the overall magnetocaloric behavior of the GdZn 1-x Ga x series of samples.
Anomalous elastic softening in ferroelectric hafnia under pressure
his study employs first-principles density-functional theory (DFT) calculations to explore the elastic and mechanical properties of ferroelectric hafnia (HfO 2 ) in its polar orthorhombic 𝑃𝑐𝑎2 1 phase under varying hydrostatic pressure conditions up to 30 GPa. Utilizing a plane-wave basis set and Perdew-Burke-Ernzerhof generalized-gradient approximation for solids in our DFT calculations, we investigate both pure and yttrium-substituted HfO 2 . Our findings reveal an anomalous reduction in the 𝐶 33 component of the elastic tensor with increasing pressure, which becomes significant above 15 GPa and signals a potential pressure-driven structural phase transition at higher pressure. The analysis of atomic displacements under pressure sheds light on the unusual mechanical behavior and phase stability of this material. Additionally, we observe a transition from an indirect band gap to a direct band gap with increasing pressure, which could have significant implications for optical applications. Here, the effects of yttrium substitution on the mechanical and electronic properties are further examined, revealing that yttrium substitution softens the elastic response of this material and reduces the electronic band gap. These results enhance our understanding of elastic and mechanical responses of ferroelectric hafnia and its potential for applications in microelectronics, piezoelectric devices, and nonvolatile ferroelectric random-access memories. Further experimental validation is recommended to confirm our predictions and explore the practical implications of the observed phase transitions and electronic behavior of the ferroelectric hafnia under high-pressure conditions.
Phase-field model of coupled insulator-metal transitions and oxygen vacancy redox reactions
A predominant ubiquitous feature of strongly correlated oxides is the possible presence of oxygen vacancies, which has recently been shown to have profound effects on their electronic phase transitions. Here, we formulate a comprehensive phase-field model of intercoupled insulator-metal transitions and oxygen vacancy redox reactions, taking into account the valence electron state of oxygen vacancies. We use the model to study the voltage self-oscillation phenomenon in a prototypical strongly correlated oxide, VO 2 , and discover the mutual activation of the insulator-metal transition and oxygen vacancy redox reactions leading to systematic enhancement of the oscillation frequency. Furthermore, the established methodology and the mutual activation mechanism are generally applicable to understanding any insulator-metal transition dynamics in oxygen-deficient correlated oxides and improving the performance of voltage self-oscillation-based artificial neurons.
Depinning, melting, and sliding of generalized Wigner crystals in Moiré systems
We numerically examine the depinning, sliding, and melting of commensurate and incommensurate Wigner crystals on two-dimensional hexagonal periodic substrates near fillings of 1 / 3 , 1 / 2 , and 2 / 3 to model the dynamics of generalized Wigner crystals in moiré heterostructures. At low temperatures where thermal fluctuations are irrelevant, for commensurate fillings we find a strongly pinned state that depins into a sliding crystal, while at incommensurate fillings the depinning threshold is strongly reduced. For fillings below 1 / 2 , the depinning occurs in a two-step process. Above the first depinning threshold, there is an extended range of drives where the conduction occurs via the sliding of antikinks along the charge stripes, followed by a second threshold where all the charges begin to slide. At finite temperatures, the external driving reduces the effective melting temperature at commensurate fillings and enhances creep at incommensurate fillings. We show that depinning into different sliding states, such as moving fluids or moving crystals, produces nonlinear features in the transport curves. We also show that transport is asymmetric on either side of a commensurate filling due to the different dynamics for interstitials versus holes in the commensurate structure. A variety of sliding states should be accessible for generalized Wigner crystals at finite temperatures even for low drives. If experiments can realize sliding dynamics in moiré systems, it would open another class of commensurate and incommensurate phases for study. Additionally, the sliding dynamics and antikink flow could provide unique functionalities for charge transport in moiré heterostructures. Published by the American Physical Society 2025
Nitrogen: A promising doping strategy for high-performance ovonic threshold switching selectors
The Ovonic Threshold Switching (OTS) selector serves as an essential component in the development of three-dimensional high-density memory integration technology. Nevertheless, the state-of-the-art high-performance OTS materials usually contain toxic elements such as arsenic (As), posing significant risks to both environmental and human health. Nitrogen (N), which belongs to the same group as arsenic (As), has emerged as a highly promising alternative for As doping. However, the underlying mechanisms that govern N-based OTS materials have not yet been extensively investigated. In this study, we delve into the effects of N doping on the structural, bonding, and electronic properties of amorphous GeSe (a-GeNSe) by ab initio molecular dynamics simulations to bridge the knowledge gap. Our findings indicate that upon N doping in a-GeSe, the formation of robust Ge-N bonds, along with N-centered tetrahedral and triangular structures, resulting in the sluggish atomic movement that enhances the thermal stability and endurance of a-GeNSe. The OTS characteristics are significantly influenced by the material’s electronic band structure, and thus the relatively slow performance drift can be attributed to the stabilization of mid-gap states, a result of N doping which effectively slows down the aging process of chalcogenide glass. Moreover, the increased mobility gap in a-GeNSe raises the threshold voltage (V th ), making it more compatible with commercially available phase-change memory materials. Furthermore, our findings reveal the extensive impact of the N element on a typical OTS material and offer valuable perspectives for alternative doping strategies that could potentially supplant As practices.
Phase-field simulation of domain size effect on dielectric and piezoelectric responses in K 0.5 Na 0.5 NbO 3 epitaxial thin films with superdomain structures
Size effects of mesoscale ferroelectric domains on the macroscopic dielectric and piezoelectric responses in domain-engineered bulk piezocrystals have been extensively studied for more than two decades. However, less is known about the domain size effects in ferroelectric epitaxial thin films, especially for films consisting of low-symmetry ferroelectric phases and exhibits hierarchical superdomain structures. Herein, using phase-field simulations, we systemically evaluate the effective out-of-plane dielectric and piezoelectric coefficients, κ$^{*}_{33}$ and d$^{*}_{33}$, as a function of the domain periods for two types of superdomain structures in ferroelectric K 0.5 Na 0.5 NbO 3 epitaxial thin films. In one type of the superdomain structures, we find that more than 70% increase of κ$^{*}_{33}$ and nearly 20% increase of d$^{*}_{33}$ can be achieved by tuning the domain period by a few tens of nanometers. Dissimilar behaviors are found when the domain period varies along different lateral directions, suggesting anisotropic domain size effects in thin films. By analyzing the local dielectric and piezoelectric responses from each domain variants and domain walls, we reveal that the domain size effect is governed by the variation of out-of-plane polarization inside the domains. Moreover, we also demonstrate enhanced domain size effects by modulating the misfit strains and temperature to approach the polymorphic phase boundaries, suggesting tunability of the size effect by doping and strain engineering. Furthermore, our results reveal multimodal domain size dependence of dielectric and piezoelectric responses in low-symmetry ferroelectric epitaxial thin films, implying that domain size engineering can be used to tune macroscopic properties of thin-film ferroelectrics, similar to their bulk counterparts.
Ab initio study on the effect of A-site doping on the stability, equilibrium volume, activation energy barrier, and oxygen diffusivity in La2-xAxNiO4+δ
Not Available
Size- and concentration-dependent Eu 2+ /Eu 3+ mixed luminescent characteristics of rare-earth-doped CaF 2 nanoparticles and their monolithic epoxy nanocomposites
CaF 2 is a promising luminescent host material for a wide range of applications, due to its high transparency, non-hygroscopy, low refractive index, low density, low backscattering efficiency, and abundance in nature. Here we report the photoluminescence (PL) and cathodoluminescence (CL) characteristics of rare-earth-doped CaF 2 nanoparticles and their composite monoliths with epoxy with visible emissions. The CaF 2 nanoparticles of ca. 36, 108 and 305 nm were prepared by a facile solution-mixing process and subsequent hydrothermal treatment. As the particle size decreases, the luminescence intensity increases for single-doped particles, while oppositely decreases for codoped particles because of energy transfer. Further, Eu 2+ - and Tb 3+ -codoped CaF 2 nanoparticles exhibit red emission, providing an efficient path for red emission through an energy transfer by Tb 3+ bridging without direct Eu 3+ doping. The effects of size and concentration are found to be pronounced in CL than PL, as the charge transfer between Eu 2+ and Eu 3+ reduces the concentration quenching in CL. The luminescence emission characteristics of epoxy/CaF 2 monoliths are different from those of particles due to the interactions with the epoxy molecules, and thus the energy transfer is hindered in PL while not in CL, enabling them for high-energy irradiation applications.
Vanadium Substitution Dictates H Atom Uptake at Lindqvist-type Polyoxotungstates
Understanding how modification of molecular structures changes the thermochemistry of H atom uptake can provide design criteria for the formation of highly active catalysts for reductive transformations. Herein, we describe the effect of doping an atomically precise polyoxotungstate with vanadium on proton-coupled electron transfer (PCET) reactivity. The Lindqvist-type polyoxotungstate [W 6 O 19 ] 2– displays reversible redox chemistry, which was found to be unchanged in the presence of acid, indicating an inability to couple reduction with protonation. However, the incorporation of a single vanadium center into the structure significantly changes the reactivity, and the potential required for one-electron reduction of [VW 5 O 19 ] 3– was shown to vary with the strength of the acid added. Construction of a potential-pK a diagram allowed assessment of the thermodynamics of H atom uptake, indicating BDFE(O–H) ≈ 64 kcal/mol, while chemical synthesis of the reduced/protonated derivative (TBA) 3 [VW 5 O 19 H] was used to probe the position of protonation.
Iron-assisted growth of anisotropic ZnO nanostructures
Anisotropic nanostructures offer a promising pathway to modulate structure-function relationships of materials. However, the correlation between growth direction of high-quality anisotropic nanostructures, the synthesis conditions and mechanisms controlling their growth, and their magnetic and optical properties remain underexplored. In this study, we developed an iron-assisted anisotropic growth method to form zinc oxide nanostructures on the O-polar (0001̄) surface, resulting in two distinct ZnO-based nanostructures: hand-shaped nanostructures and truncated hexagonal nanopyramids. In contrast to most reports of anisotropic nanostructure synthesis, which primarily focus on morphology control through ligand-ligand interactions, the current study probes the effects of doping on anisotropic growth, and how doping, along with ligand-ligand interactions and facet-specific ligand binding, control nanostructure morphology. The reaction mechanisms leading to formation of these novel structures were thoroughly probed by systematically manipulating synthesis parameters. A two-step formation mechanism was identified: first, a hexagonal platform forms through an initial homogeneous nucleation process, followed by secondary heterogeneous nucleation, which results in metastable secondary nanostructures growing on the oxygen-rich template. Optical and magnetic properties of these Fe/ZnO nanostructures were characterized. Our findings provide a new strategy that uses a magnetic element as a dopant to build new nanostructures of ZnO with controllable size and shape growing on an oxygen-rich crystal plane. These materials could have applications in novel technologies where both optoelectronic and magnetic properties are of interest.
Orbital hybridisation effects in B2 phase Cr doped Co 2 MnAl
Here we investigate here the magnetic, transport, local structural and electronic properties of Co 2 Mn 1−x Cr x Al (x = 0, 0.05, 0.1 and 0.2). Our results show that all the compounds stabilise in B2 phase and are ferromagnets. The results reveal disorder at the structural and magnetic levels. X-ray absorption near edge structure (XANES) analysis reveal signature of antisite disorder between Mn and Al atoms with equal ratio. The electronic structure calculations suggest enhancement in the half metallicity, localisation of electrons at the Fermi level and an increment in density of states with doping. The combined results of electronic structure calculations and XANES studies suggest transfer of electrons to the Co site. The results of high temperature resistivity measurements suggest the conduction electrons are undergoing transition from delocalisation to weak localisation to activated behaviour with Cr doping. The extended x-ray absorption spectroscopic analysis shows that the local structure around Mn atom is different from the global structure as obtained from the x-ray diffraction results. The behaviour of the edge region is in line with the trend as obtained from the compositional analysis. We observe link between the hybridisation of 3d like states at the Mn, Cr sites with that at the Co site and the transport properties. This could help in understanding the unusual decrement in the lattice parameter with doping. These results reveal the role of local structure in understanding the physical properties of such systems.