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Results for “electric field effect”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Effects of collisional ion orbit loss on tokamak radial electric field and toroidal rotation in an L-mode plasma

Abstract Ion orbit loss has been used to model the formation of a strong negative radial electric field E r in the tokamak edge, as well as edge momentum transport and toroidal rotation. To quantitatively measure ion orbit loss, an orbit-flux formulation has been developed and numerically applied to the gyrokinetic particle-in-cell code XGC. We study collisional ion orbit loss in an axisymmetric DIII-D L-mode plasma using gyrokinetic ions and drift-kinetic electrons. Numerical simulations, where the plasma density and temperature profiles are maintained through neutral ionization and heating, show the formation of a quasisteady negative E r in the edge. We have measured a radially outgoing ion gyrocenter flux due to collisional scattering of ions into the loss orbits, which is balanced by the radially incoming ion gyrocenter flux from confined orbits on the collisional time scale. This suggests that collisional ion orbit loss can shift E r in the negative direction compared to that in plasmas without orbit loss. It is also found that collisional ion orbit loss can contribute to a radially outgoing (counter-current) toroidal-angular-momentum flux, which is not balanced by the toroidal-angular-momentum flux carried by ions on the confined orbits. Therefore, the edge toroidal rotation shifts in the co-current direction on the collisional time scale.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

A Comparison of Radiation-Induced and High-Field Electrically Stress-Induced Interface Defects in Si/SiO 2 MOSFETs via Electrically Detected Magnetic Resonance

Here, we utilize electrically detected magnetic resonance (EDMR) measurements to compare high-field stressed, and gamma irradiated Si/SiO 2 metal–oxide–silicon (MOS) structures. We utilize spin-dependent recombination (SDR) EDMR detected using the Fitzgerald and Grove dc I-V approach to compare the effects of high-field electrical stressing and gamma irradiation on defect formation at and near the Si/SiO 2 interface. As anticipated, both greatly increase the concentration of P b centers (silicon dangling bonds at the interface) densities. The irradiation also generated a significant increase in the dc I-V EDMR response of E' centers (oxygen vacancies in the SiO 2 films), whereas the generation of an E' EDMR response in high-field stressing is much weaker than in the gamma irradiation case. These results likely suggest a difference in their physical distribution resulting from radiation damage and high electric field stressing.

42 ENGINEERING↗
DOE OSTI2025

Role of effective mass and long-range interactions in the band-gap renormalization of photoexcited semiconductors

Understanding how to control changes in the electronic structure and related dynamical renormalizations by external driving fields is the key for understanding ultrafast spectroscopy and applications in electronics. Here, we focus on the band gap's modulation by external electric fields and uncover the effect of band dispersion on the gap renormalization. We employ the Green's function formalism using the real-time Dyson expansion to account for dynamical correlations induced by photodoping. The many-body formalism captures the dynamics of systems with long-range interactions, carrier mobility, and variable electron and hole effective mass. We also demonstrate that mean-field simulations based on the Hartree-Fock Hamiltonian, which lacks dynamical correlations, yields a qualitatively incorrect picture of band-gap renormalization. We find the trend that increasing effective mass, thus decreasing mobility, leads to as much as a 6% enhancement in band-gap renormalization. Further, the renormalization is strongly dependent on the degree of photodoping. As the screening induced by free electrons and holes effectively reduces any long-range and interband interactions for highly excited systems, we show that there is a specific turnover point with a minimal band gap. Here, we further demonstrate that the optical gap renormalization follows the same trend though its magnitude is altered by the Moss-Burstein effect.

Approximation methods for many-body systems↗
DOE OSTI2023

A planar defect spin sensor in a two-dimensional material susceptible to strain and electric fields

Abstract The boron-vacancy spin defect ( $${\,{{\mbox{V}}}}_{{{\mbox{B}}}\,}^{-}$$ V B − ) in hexagonal boron nitride (hBN) has a great potential as a quantum sensor in a two-dimensional material that can directly probe various external perturbations in atomic-scale proximity to the quantum sensing layer. Here, we apply first-principles calculations to determine the coupling of the $${\,{{\mbox{V}}}}_{{{\mbox{B}}}\,}^{-}$$ V B − electronic spin to strain and electric fields. Our work unravels the interplay between local piezoelectric and elastic effects contributing to the final response to the electric fields. The theoretical predictions are then used to analyse optically detected magnetic resonance (ODMR) spectra recorded on hBN crystals containing different densities of $${\,{{\mbox{V}}}}_{{{\mbox{B}}}\,}^{-}$$ V B − centres. We prove that the orthorhombic zero-field splitting parameter results from local electric fields produced by surrounding charge defects. This work paves the way towards applications of $${\,{{\mbox{V}}}}_{{{\mbox{B}}}\,}^{-}$$ V B − centres for quantitative electric field imaging and quantum sensing under pressure.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Electrical Tuning of Tin-Vacancy Centers in Diamond

Group-IV color centers in diamond have attracted significant attention as solid-state spin qubits because of their excellent optical and spin properties. Among these color centers, the tin-vacancy (Sn-V - ) center is of particular interest because its large ground-state splitting enables long spin coherence times at temperatures above 1 K. However, color centers typically suffer from inhomogeneous broadening, which can be exacerbated by nanofabrication-induced strain, hindering the implementation of quantum nodes emitting indistinguishable photons. Although strain and Raman tuning have been investigated as promising tuning techniques to overcome the spectral mismatch between distinct group-IV color centers, other approaches need to be explored to find methods that can offer more localized control without sacrificing emission intensity. Here, we study the electrical tuning of Sn-V - centers in diamond via the direct-current Stark effect. We demonstrate a tuning range beyond 1.7 GHz. We observe both quadratic and linear dependence on the applied electric field. Further, we also confirm that the tuning effect we observe is a result of the applied electric field and is distinct from thermal tuning due to Joule heating. Stark tuning is a promising avenue toward overcoming detunings between emitters and enabling the realization of multiple identical quantum nodes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Epitaxial oxide ionotronics: Interfaces and oxygen vacancies

Oxide ionotronics is an interdisciplinary field in which systems and devices rely on the migration of ions/ionic defects to alter or drive functionality. In this perspective, we focus on epitaxial oxide heterostructures and the contributing roles of oxygen vacancies and interfaces in ionotronics. We begin with a description of oxygen vacancy behavior, with a focus on vacancy ordering and the effects of interfaces and electric fields on particular epitaxial oxide systems. We then emphasize the use of synchrotron x-ray techniques for investigating system structure and dynamics in situ at interfaces and surfaces. Finally, an outlook on the future of epitaxial oxide ionotronics is provided, and several key areas for research are identified, such as freestanding heterostructures, combinatorial synthesis and machine learning, and next-generation synchrotron x-ray characterization.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Layer Hall effect in a 2D topological axion antiferromagnet

While ferromagnets have been known and exploited for millennia, antiferromagnets (AFMs) were only discovered in the 1930s. The elusive nature indicates AFMs' unique properties: At large scale, due to the absence of global magnetization, AFMs may appear to behave like any non-magnetic material; However, such a seemingly mundane macroscopic magnetic property is highly nontrivial at microscopic level, where opposite spin alignment within the AFM unit cell forms a rich internal structure. In topological AFMs, such an internal structure leads to a new possibility, where topology and Berry phase can acquire distinct spatial textures. Here, we study this exciting possibility in an AFM Axion insulator, even-layered MnBi 2 Te 4 flakes, where spatial degrees of freedom correspond to different layers. Remarkably, we report the observation of a new type of Hall effect, the layer Hall effect, where electrons from the top and bottom layers spontaneously deflect in opposite directions. Specifically, under no net electric field, even-layered MnBi 2 Te 4 shows no anomalous Hall effect (AHE); However, applying an electric field isolates the response from one layer and leads to the surprising emergence of a large layer-polarized AHE (~50e 2 /h). Such a layer Hall effect uncovers a highly rare layer-locked Berry curvature, which serves as a unique character of the space-time PT-symmetric AFM topological insulator state. Moreover, we found that the layer-locked Berry curvature can be manipulated by the Axion field, E∙B, which drives the system between the opposite AFM states. Our results achieve previously unavailable pathways to detect and manipulate the rich internal spatial structure of fully-compensated topological AFMs. The layer-locked Berry curvature represents a first step towards spatial engineering of Berry phase, such as through layer-specific moiré potential.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Ultrafast Optomechanical Strain in Layered GeS

Strong coupling between light and mechanical strain forms the foundation for next-generation optical micro- and nano-electromechanical systems. Such optomechanical responses in two-dimensional materials present novel types of functionalities arising from the weak van der Waals bond between atomic layers. In this paper, by using structure-sensitive megaelectronvolt ultrafast electron diffraction, we report the experimental observation of optically driven ultrafast in-plane strain in the layered group IV monochalcogenide germanium sulfide (GeS). Surprisingly, the photoinduced structural deformation exhibits strain amplitudes of order 0.1% with a 10 ps fast response time and a significant in-plane anisotropy between zigzag and armchair crystallographic directions. Rather than arising due to heating, experimental and theoretical investigations suggest deformation potentials caused by electronic density redistribution and converse piezoelectric effects generated by photoinduced electric fields are the dominant contributors to the observed dynamic anisotropic strains. Our observations define new avenues for ultrafast optomechanical control and strain engineering within functional devices.

2D materials↗
DOE OSTI2024

Direct evidence of low work function on SrVO 3 cathode using thermionic electron emission microscopy and high-field ultraviolet photoemission spectroscopy

Perovskite SrVO 3 has recently been proposed as a novel electron emission cathode material. Density functional theory (DFT) calculations suggest multiple low work function surfaces, and recent experimental efforts have consistently demonstrated effective work functions of ~2.7 eV for polycrystalline samples, both results suggesting, but not directly confirming, that some fraction of even lower work function surface is present. In this work, thermionic electron emission microscopy (ThEEM) and high-field ultraviolet photoemission spectroscopy (UPS) are used to study the local work function distribution and measure the work function of a partially oriented- (110)-SrVO 3 perovskite oxide cathode surface. Our results show direct evidence of low work function patches of about 2.0 eV on the cathode surface, with a corresponding onset of observable thermionic emission at 750 °C. We hypothesize that, in our ThEEM and UPS experiments, the high applied electric field suppresses the patch field effect, enabling the direct measurement of local work functions. This measured work function of 2.0 eV is comparable to the previous DFT-calculated work function values of the SrVO-terminated (110) SrVO 3 surface (2.3 eV) and SrO-terminated (100) surface (1.9 eV). The measured 2.0 eV value is also much lower than the work function for the (001) LaB 6 single crystal cathode (~2.7 eV) and comparable to the effective work function of B-type dispenser cathodes (~2.1 eV). If SrVO 3 thermionic emitters can be engineered to access domains of this low 2.0 eV work function, they have the potential to significantly improve thermionic emitter-based technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Implications of the Upper Bound on h → μ + μ - on the Baryon Asymmetry of the Universe

The upper bounds from the ATLAS and CMS experiments on the decay rate of the Higgs boson to two muons provide the strongest constraint on an imaginary part of the muon Yukawa coupling. This bound is more than an order of magnitude stronger than bounds from $\mathcal{CP}$-violating observables, specifically the electric dipole moment of the electron. It excludes a scenario $-$ which had been viable prior to these measurements $-$ that a complex muon Yukawa coupling is the dominant source of the baryon asymmetry. Even with this bound, the muon source can still contribute ${\cal O}(16\%)$ of the asymmetry.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

Radial electric field and density fluctuations measured by Doppler reflectometry during the post-pellet enhanced confinement phase in W7-X

Radial profiles of density fluctuations and the radial electric field, Er, have been measured using Doppler reflectometry during the post-pellet enhanced confinement phase achieved, under different heating power levels and magnetic configurations, during the 2018 W7-X experimental campaign. A pronounced Er-well is measured with local values as high as -40 kV m -1 in the radial range ρ ~ 0.7–0.8 during the post-pellet enhanced confinement phase. The maximum Er intensity scales with both the plasma density and electron cyclotron heating power level, following a similar trend to the plasma energy content. A good agreement is found when the experimental Er profiles are compared to simulations carried out using the neoclassical codes, the drift kinetic equation solver (DKES) and kinetic orbit-averaging solver for stellarators (KNOSOS). The density fluctuation level decreases from the plasma edge toward the plasma core and the drop is more pronounced in the post-pellet enhanced confinement phase than in reference gas-fuelled plasmas. Besides, in the post-pellet phase, the density fluctuation level is lower in the high iota magnetic configuration than in the standard one. Therefore, to determine whether this difference is related to the differences in the plasma profiles or to the stability properties of the two configurations, gyrokinetic simulations have been carried out using the codes stella and EUTERPE. The simulation results point to the plasma profile evolution after the pellet injection and the stabilization effect of the radial electric field profile as the dominant players in the stabilization of the plasma turbulence.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Polarization-dependent electrocaloric and pyroelectric effects in ferroelectric BaTiO 3 thin films

In this paper we examine the influence of controllable polarization reversal and built-in electric fields on pyroelectric and electrocaloric effects in a BaTiO 3 thin film using a modified indirect method. We find that the magnitude of the sample's change in polarization with temperature is sensitive to the degree of polarization reversal. The pyroelectric response is small at low fractions of switched polarization and grows larger by several factors as larger fractions of polarization are reversed. This polarization reversal-sensitive pyroelectric behavior is the result of an internal built-in field, which has the effect of destabilizing low fractions of switched polarization and producing diminished pyroelectric effect. Greater fractions of switched polarization are more stable against backswitching and permit a larger pyroelectric response. Our findings highlight a characterization method for polarization-dependent pyroelectric effects in ferroelectric thin films, where built-in field effects are also present.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Raman Laser-Induced Structural Modification in CVD-Grown Monolayer MoS 2 for Multi-Purposed Nanofabrication

Molybdenum disulfide (MoS 2 ) has been extensively explored to be utilized as an electronic material in a variety of device applications. In particular, the tunability of MoS 2 enhances its electrical properties making it an intriguing candidate for field-effect transistors (FETs), while also extending beyond electrical properties to structural phase engineering. Laser-induced modifications, particularly with Raman lasers, offer a straightforward method to modulate materials via thermal processes with precise patterning control and energy-level flexibility. However, most studies on the modification of MoS 2 have focused on multilayered structures or have been conducted under low-power laser conditions, leaving the feasibility of structural modifications in monolayer MoS 2 elusive. In this study, we fundamentally elucidated the effects of high-power Raman laser irradiation on the surface of chemical vapor deposition (CVD)-grown monolayer MoS 2 under ambient conditions and uncovered the underlying mechanisms of laser-induced modifications by applying intense photon energy with highly interactive reactions. Our results revealed both etching and deposition phenomena in two discernible regions, and it can be demonstrated by intensity regimes based on the spatial distribution of laser irradiance within the laser-irradiated spot. Furthermore, phase transition was found to be inhibited due to the promoted oxidation and the deposition of hydrogenated amorphous carbon (a-C:H), and p-type doping was observed, likely occurring in the region beneath the a-C:H deposition as substitutional doping on the 2H phase of MoS 2 . To compare the thermal effects, MoS 2 modifications were further analyzed using simplified heat transfer estimations. In conclusion, these findings deepen our understanding of how Raman laser irradiation modifies MoS 2 under ambient conditions, providing guidelines for optimizing its modification processes.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Computation and consequences of high order amplitude- and parameter-dependent tune shifts in storage rings for high precision measurements

Nonlinear effects of the various electric field and magnetic field components of storage rings to confine the particles and bend their trajectory can cause substantial amplitude-dependent tune shifts within the beam. Furthermore, tune shifts are often sensitive to variations of system parameters, e.g. total particle momentum offsets $δp$. Such amplitude- and parameter-dependent tune shifts influence the dynamics and stability of a beam in particle storage rings. Thus, it is critical for high precision measurements to analyze and understand these influences. On this basis, we present in this paper normal form methods for the calculation of high order amplitude and system parameter dependencies of the horizontal and vertical tunes in storage rings using the differential algebra (DA) framework within COSY INFINITY. A storage ring is simulated using COSY INFINITY to generate a DA Poincaré return map describing the transverse phase space behavior after each revolution in the storage ring. The map is expanded around the parameter-dependent closed orbit of the system before transforming the resulting map into normal form coordinates to extract the high order tune dependencies on the phase space amplitude and variation in the system parameters. As a specific example, a storage ring similar to the Storage Ring of the Muon g-2 Experiment at Fermilab (E989) is investigated.

43 PARTICLE ACCELERATORS↗
DOE OSTI2022

Magic zeroes and hidden symmetries

Selection rules arising from accidental or broken symmetries may be sufficiently obscure that their agency is hidden, leading to the appearance of “magic zeroes” — quantities that are suppressed without apparent recourse to a symmetry explanation. Magic zeroes and their corresponding hidden symmetries may shed new light on parametric hierarchies in the Standard Model and beyond. We identify the hidden symmetry responsible for a recently-discovered magic zero, the vanishing of the putative leading contribution to the anomalous dipole moments of the muon upon integrating out weak doublet and singlet vector-like fermions. Some of the tools involved — spurion analysis leveraging discrete symmetries of the free theory, field redefinitions, spectator fields, and non-supersymmetric non-renormalization theorems — may prove useful in the hunt for new magic zeroes and their hidden symmetries.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2024

Study on the magnetothermal properties of the D y 1 - x T b x A l 2 series of compounds

Here, in this work, we developed a theoretical model Hamiltonian, in the mean field approximation, to describe the magnetic and magnetocaloric behavior of the series of compounds Dy 1-x Tb x Al 2 (x = 0.00, 0.15, 0.25, 0.30, 0.35, 0.40 and 0.75). We adjusted the exchange parameters λ DyDy , λ TbTb , and λ DyTb to obtain the spin reorientation temperatures (T SR ) and the critical temperature (T C ) for each compound in the series. The results obtained by the Hamiltonian model agree satisfactorily with the experimental results. The heat capacity curves with and without an applied magnetic field, adiabatic temperature variation and isothermal entropy variation were modeled and compared with the experimental data. As the experimental results show, our model was also able to reproduce the change in the spin reorientation process: a first order spin reorientation transition appears for concentrations x = 0.15, 0.25, 0.30, 0.35, and no spin reorientation transitions after x = 0.40.

36 MATERIALS SCIENCE↗
DOE OSTI2024

A physics-constrained deep learning surrogate model of the runaway electron avalanche growth rate

A surrogate model of the runaway electron avalanche growth rate in a magnetic fusion plasma is developed. This is accomplished by employing a physics-informed neural network (PINN) to learn the parametric solution of the adjoint to the relativistic Fokker–Planck equation. The resulting PINN is able to evaluate the runaway probability function across a broad range of parameters in the absence of any synthetic or experimental data. This surrogate of the adjoint relativistic Fokker–Planck equation is then used to infer the avalanche growth rate as a function of the electric field, synchrotron radiation and effective charge. Predictions of the avalanche PINN are compared against first principle calculations of the avalanche growth rate with excellent agreement observed across a broad range of parameters.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗