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DOE OSTI2025

Sputtered ferroelectric aluminum scandium boron nitride (Al 1−x−y B x Sc y N)/ n -GaN heterostructures

This work demonstrates ferroelectric switching in magnetron sputtered Al 1−x−y B x Sc y N/ n -GaN heterostructures. Using high power impulse magnetron sputtering, a silicon doped n -GaN bottom electrode with an electron concentration of 6.0 × 10 19 cm −3 is grown on c-plane sapphire. Al 1−x−y B x Sc y N films are prepared on the GaN surface with Al:B:Sc ratios that produce tensile, lattice matched, or compressive epitaxial strains. X-ray diffraction shows that lattice matched and compressively strained Al 1−x−y B x Sc y N compositions are pseudomorphic, while partial relaxation is observed for tensilely strained Al 1−x−y B x Sc y N/ n -GaN heterostructures. Electrically, the Al 1−x−y B x Sc y N/ n -GaN stacks show robust hysteresis; the P–E loops are fully saturated with both lattice matched and compressively strained Al 1−x−y B x Sc y N compositions exhibiting remanent polarization values of 135 μC/cm 2 . For comparison, Al 1−x−y B x Sc y N films are also prepared on metal organic chemical vapor deposition and single crystal GaN substrates to extend strain and morphology trends to more common substrate types. This report validates that sputter deposition is a feasible technique for fabricating strain-tunable ferroelectric III–N heterostructures with high crystalline fidelity and smooth surface morphologies.

42 ENGINEERING↗

DOE OSTI2021

Carbon complexes in highly C-doped GaN

We investigate the properties of heavily C-doped GaN grown by hydride vapor phase epitaxy using both optical experiments and hybrid density functional theory calculations. Previous work has established that carbon acceptors (C N ) give rise to a yellow luminescence band near 2.2 eV along with a blue luminescence band near 2.9 eV. Photoluminescence measurements show the yellow band shifting as a function of carbon concentration, suggesting a change in the behavior of carbon species as carbon content increases. With hybrid density functional theory we calculate the electrical and optical behavior of carbon centers containing multiple carbon impurities, which may arise in heavily doped material. We compare the behavior of these complexes to the isolated centers, and find that the dicarbon donor-acceptor (C Ga –C N ) complex is a candidate to explain the shift in the yellow luminescence peak. Tricarbon complexes have high formation energies and modest binding energies, and also give rise to optical transitions that are inconsistent with the observed spectra. We also identify the split dicarbon interstitial on the gallium site as a low-energy species with a large binding energy that may act to compensate carbon acceptors. Here, local vibrational modes are calculated for carbon impurity centers, and we compare these results to recent experiments. Dicarbon and tricarbon complexes involving C Ga and C N exhibit modes that are only slightly higher than the isolated species, while carbon interstitials and related complexes give rise to vibrational modes much higher than C Ga and C N .

36 MATERIALS SCIENCE↗

DOE OSTI2021

Ag-doped As–S–Se chalcogenide glasses: a correlative study of structural and dielectrical properties

This work is focused on investigating the effect of Ag doping on the dielectric and structural properties of the As–S–Se glass system and their suitability for potential applications in optoelectronics, such as electronic and switching components. A series of glasses from the system Agx(As40S30Se30)100-x (x = 5 at.% Ag) were prepared with melt-quenching technique. Morphological and compositional analysis was performed by scanning electron microscopy and energy-dispersive X-ray spectroscopy. Raman spectroscopy measurements have shown structural modifications of the glass network upon Ag doping, with creation of new Ag–(S,Se)–As structures, resulting in increased number of defect states. Variations in dielectric permittivity (e') and dielectric loss (e") were investigated in a wide frequency and temperature range, and explained by dominant dipolar and electronic polarization, as well as correlated with the observed structural changes. Improvement in dielectric properties is observed upon doping with Ag. Furthermore, the low dielectric tangent loss at high frequencies for all glassy samples points to a beneficial ability of the material to absorb energy of the external electric field. Good thermal stability of these glasses is confirmed by the calculated temperature coefficient of the dielectric permittivity. Density of localized states in all glasses was determined from AC conductivity and the dielectric tangent loss using a correlated barrier hopping model, and found to increase with Ag concentration. The overall results suggest that Ag doping enhances the electrical and optical quality of this type of glasses, making them suitable as nonlinear optical materials and their applications in devices.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Enhanced hydrodynamic transport in near magic angle twisted bilayer graphene

Using the semiclassical quantum Boltzmann theory and employing the Dirac model with twist angle-dependent Fermi velocity, we obtain results for the electrical resistivity, the electronic thermal resistivity, the Seebeck coefficient, and the Wiedemann-Franz ratio in near magic angle twisted bilayer graphene, as functions of doping density (around the charge-neutrality point) and modified Fermi velocity $\tilde{v}$. The $\tilde{v}$ dependence of the relevant scattering mechanisms, i.e., electron-hole Coulomb, long-range impurities, and acoustic gauge phonons, is considered in detail. We find a range of twist angles and temperatures, where the combined effect of momentum-nonconserving collisions (long-range impurities and phonons) is minimal, opening a window for the observation of strong hydrodynamic transport. In this work, several experimental signatures are identified, such as a sharp dependence of the electric resistivity on doping density and a large enhancement of the Wiedemann-Franz ratio and the Seebeck coefficient.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2022

Manipulating high-temperature superconductivity by oxygen doping in Bi2Sr2CaCu2O8+δ thin flakes

Abstract Harnessing the fascinating properties of correlated oxides requires precise control of their carrier density. Compared to other methods, oxygen doping provides an effective and more direct way to tune the electronic properties of correlated oxides. Although several approaches, such as thermal annealing and oxygen migration, have been introduced to change the oxygen content, a continuous and reversible solution that can be integrated with modern electronic technology is much in demand. Here, we report a novel ionic field-effect transistor using solid Gd-doped CeO2 as the gate dielectric, which shows a remarkable carrier-density-tuning ability via electric-field-controlled oxygen concentration at room temperature. In Bi2Sr2CaCu2O8+δ (Bi-2212) thin flakes, we achieve a reversible superconductor–insulator transition by driving oxygen ions in and out of the samples with electric fields, and map out the phase diagram all the way from the insulating regime to the over-doped superconducting regime by continuously changing the oxygen doping level. Scaling analysis indicates that the reversible superconductor–insulator transition for the Bi-2212 thin flakes follows the theoretical description of a two-dimensional quantum phase transition. Our work provides a route for realizing electric-field control of phase transition in correlated oxides. Moreover, the configuration of this type of transistor makes heterostructure/interface engineering possible, thus having the potential to serve as the next-generation all-solid-state field-effect transistor.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2021

Metallic surface doping of metal halide perovskites

Abstract Intentional doping is the core of semiconductor technologies to tune electrical and optical properties of semiconductors for electronic devices, however, it has shown to be a grand challenge for halide perovskites. Here, we show that some metal ions, such as silver, strontium, cerium ions, which exist in the precursors of halide perovskites as impurities, can n-dope the surface of perovskites from being intrinsic to metallic. The low solubility of these ions in halide perovskite crystals excludes the metal impurities to perovskite surfaces, leaving the interior of perovskite crystals intrinsic. Computation shows these metal ions introduce many electronic states close to the conduction band minimum of perovskites and induce n-doping, which is in striking contrast to passivating ions such as potassium and rubidium ion. The discovery of metallic surface doping of perovskites enables new device and material designs that combine the intrinsic interior and heavily doped surface of perovskites.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2021

Low-temperature and effective ex situ group V doping for efficient polycrystalline CdSeTe solar cells

CdTe solar cell technology is one of the lowest-cost methods of generating electricity in the solar industry, benefiting from fast CdTe absorber deposition, CdCl 2 treatment and Cu doping. However, Cu doping has low photovoltage and issues with instability. Doping group V elements into CdTe is therefore a promising route to address these challenges. Although high-temperature in situ group V doped CdSeTe devices have demonstrated efficiencies exceeding 20%, they face obstacles including post-deposition doping activation processes, short carrier lifetimes and low activation ratios. Here, we demonstrate low-temperature and effective ex situ group V doping for CdSeTe solar cells using group V chlorides. For AsCl 3 doped CdSeTe solar cells, the dopant activation ratio can be 5.88%, hole densities reach >2 × 10 15 cm -3 and carrier lifetime is longer than 20 ns. Thus, ex situ As doped CdSeTe solar cells show open-circuit voltages ~863 mV, compared to the highest open-circuit voltage of 852 mV for Cu doped CdSeTe solar cells.

14 SOLAR ENERGY↗

DOE OSTI2023

Optical, electrical, and EPR studies of polycrystalline Al:Cr:ZnSe gain elements

Transition metal-doped II-VI (TM:II-VI) chalcogenides are well-known laser materials for optically pumped middle-infrared lasers. Cr:ZnSe is a key representative of this class of transition metal doped II-VI gain media and is arguably considered the material of choice for optically pumped middle-infrared lasers. In addition to effective mid-IR lasing under optical excitation, these crystals, being wide-band semiconductors, hold the potential for direct electrical excitation. One way to form n-type conductivity in ZnSe crystals is by annealing them in a melt of Zn-Al alloy. However, this annealing of Cr:ZnSe crystals results in their purification and transfer of chromium to the melt of Zn-Al alloy. In this article, we report on optimizing the doping technique for providing n-type conductivity in Al:Cr:ZnSe crystals while preserving the chromium concentration. Al:Cr:ZnSe samples with resistivities ranging from 10.8 to 992 Ω-cm were fabricated. While the 2 + valence state of Cr is typically dominant in Cr:ZnSe, both Cr 2+ and Cr + were detected in Al:Cr:ZnSe samples. The maximum level of Cr + concentration was measured to be 4 × 10 18 cm -3 .

36 MATERIALS SCIENCE↗

DOE OSTI2022

Metastability and Degradation of CdTe Solar Cells Investigated by nm-Scale Electrical Potential Imaging

We report on investigations of reversible metastability and irreversible degradation of MZO/CdSeTe/CdTe devices from the perspective of electric field across the device using Kelvin probe force microscopy (KPFM). The device showed reversible transitions between the light-soak state (LSS) with the best device efficiency and the dark-soak state (DSS) with an inferior efficiency. However, it showed an irreversible degradation state (DgS) driven by long-hour light soaking at an elevated temperature. The nm-scale KPFM electric field imaging on cross-sections of the devices revealed different anomalous electric field profiles. The electric field at the LSS exhibits a main peak inside the CdSeTe layer but not at the MZO/CdSeTe heterointerface, demonstrating that working junction of the device is a buried homojunction (BHJ). At the DSS, a second electric field peak was observed at the MZO/CdSeTe interface with a similar strength to the main BHJ, which probably caused the decrease in fill factor at the DSS. At the DgS, the electric field peak at the MZO/CdSeTe interface increased significantly and a third electric field was measured at the back contact of the device. Device modeling using COMSOL and in alignment with both the electric field and device current-voltage curves suggest that a slightly low n-doped CdSeTe in the region near the MZO/CdSeTe interface caused the BHJ, and that either a loss of MZO doping or increase of the conduction band offset spike due to long-term stress caused the fill factor-dominated degradation and the increased electric field near the MZO/CdSeTe interface at the DgS. The former, MZO doping decrease, is more plausible by referring the related literature.

BHJ↗

DOE OSTI2022

Electrical Potential Investigation of Reversible Metastability and Irreversible Degradation of CdTe Solar Cells

In this paper, we report on the stability of CdTe devices with a structure of TCO/MZO/CdSeTe/CdTe/back-contact. The device showed reversible transitions between the light-soak state (LSS) with the best device efficiency and the dark-soak state (DSS) with an inferior efficiency. However, it showed an irreversible degradation state (DgS) driven by long-hour light soaking at an elevated temperature. We have investigated transitions between these three states from the perspective of the electric field by nm-resolution potential imaging across the devices using Kelvin probe force microscopy (KPFM). The results exhibit different anomalous electric field profiles. At the LSS, the electric field exhibits a main peak inside the CdSeTe layer instead of the MZO/CdSeTe heterointerface, illustrating a buried homojunction (BHJ) of the device. At the DSS, a large electric field peak at the MZO/CdSeTe interface was measured, which probably resulted in the inferior fill factor at the DSS. At the DgS, the electric field peak at the MZO/CdSeTe interface increased further and a third electric field was measured at the back contact of the device. Device modeling using COMSOL software, in alignment with both the electric field and device current-voltage curves, elucidates that a low n-doped CdSeTe in the region near the MZO/CdSeTe interface caused the BHJ in the LSS and a loss of MZO doping and/or increase of the conduction band offset spike due to long-term stress caused the increased electric field near the MZO/CdSeTe interface at the DgS.

CdTe solar cell↗

DOE OSTI2021

Conductive Metallophthalocyanine Framework Films with High Carrier Mobility as Efficient Chemiresistors

Abstract The poor electrical conductivity of two‐dimensional (2D) crystalline frameworks greatly limits their utilization in optoelectronics and sensor technology. Herein, we describe a conductive metallophthalocyanine‐based NiPc‐CoTAA framework with cobalt(II) tetraaza[14]annulene linkages. The high conjugation across the whole network combined with densely stacked metallophthalocyanine units endows this material with high electrical conductivity, which can be greatly enhanced by doping with iodine. The NiPc‐CoTAA framework was also fabricated as thin films with different thicknesses from 100 to 1000 nm by the steam‐assisted conversion method. These films enabled the detection of low‐concentration gases and exhibited remarkable sensitivity and stability. This study indicates the enormous potential of metallophthalocyanine‐based conductive frameworks in advanced stand‐off chemical sensors and provides a general strategy through tailor‐make molecular design to develop sensitive and stable chemical sensors for the detection of low‐concentration gases.

Yue, Yan↗

DOE OSTI2021

Conductive Metallophthalocyanine Framework Films with High Carrier Mobility as Efficient Chemiresistors

Yue, Yan↗

DOE OSTI2023

Magnetism and T-x phase diagrams of Na- and Ag-substituted EuCd 2 As 2

EuCd 2 As 2 is an antiferromagnetic semimetal, that can host non-trivial topological properties, depending upon its magnetic state and excitations. Here, we report the synthesis and characterization of Eu(Cd 1-x Ag x ) 2 As 2 and Eu 1-y Na y Cd 2 As 2 , and study the evolution and nature of magnetic order with doping. Temperature-substitution phase diagrams are constructed from the electrical resistance and magnetic susceptibility data. We observe a splitting of the magnetic transition into two different transitions, and the gradual increase in one of the transition temperatures with Agand Na-substitution. The other transition remains more or less independent of doping. Further, we show that a magnetic state with a net ferromagnetic moment is stabilized by both Ag and Na doping and this can be explained by considering the changes in band filling due to substitution as suggested by density functional theory (DFT) calculations. We thus show that chemical substitution and the subsequent changes in band filling could be a pathway to tune the magnetic ground state and to stabilize a ferromagnetic phase in EuCd 2 As 2 .

36 MATERIALS SCIENCE↗

DOE OSTI2022

Electrical Manipulation of Topological Phases in a Quantum Anomalous Hall Insulator

Quantum anomalous Hall phases arising from the inverted band topology in magnetically doped topological insulators have emerged as an important subject of research for quantization at zero magnetic fields. Though necessary for practical implementation, sophisticated electrical control of molecular beam epitaxy (MBE)-grown quantum anomalous Hall matter have been stymied by growth and fabrication challenges. Here, in this study, a novel procedure is demonstrated, employing a combination of thin-film deposition and 2D material stacking techniques, to create dual-gated devices of the MBE-grown quantum anomalous Hall insulator, Cr-doped (Bi,Sb) 2 Te 3 . In these devices, orthogonal control over the field-induced charge density and the electric displacement field is demonstrated. A thorough examination of material responses to tuning along each control axis is presented, realizing magnetic property control along the former and a novel capability to manipulate the surface exchange gap along the latter. Through electrically addressing the exchange gap, the capabilities to either strengthen the quantum anomalous Hall state or suppress it entirely and drive a topological phase transition to a trivial state are demonstrated. The experimental result is explained using first principle theoretical calculations, and establishes a practical route for in situ control of quantum anomalous Hall states and topology.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Recent trends in all-organic polymer dielectrics for high-temperature electrostatic energy storage capacitors

Electrostatic energy storage (EES) capacitors are critical for renewable energy and high-power systems, driving the search for dielectric materials that combine superior electrical insulation, mechanical flexibility, low density, cost-effectiveness, and processability. Polymer-based dielectrics have emerged as leading candidates, particularly for high electric field applications. However, conventional polymers often fail to meet the demands of high-temperature environments due to increased electrical conductivity and reduced discharged energy density at elevated temperatures, resulting in energy loss and reduced performance. High glass transition temperature (T g) polymers show promise but require further optimization to enhance their energy storage capabilities under thermal and electrical stress. This review provides a comprehensive update on recent advancements in high-T g polymer-based dielectrics for EES capacitors, focusing on both intrinsic polymers and all-organic composites. It outlines key design principles, critical performance parameters, and innovative strategies—such as nanofiller doping, layered architectures, physical blending, and chemical crosslinking—to improve electrical, thermal, and mechanical properties. The review also highlights emerging trends, including the integration of machine learning algorithms to explore novel polymer structures and expand the chemical design space. By bridging the gap between academic research and industrial application, this review aims to accelerate the development of next-generation dielectric materials capable of balancing multiple performance metrics for high-temperature EES capacitors.

Xie, Zongliang↗

DOE OSTI2026

Andrew Dieringer Poster for review

Silicon carbide has been identified as a useful material for nuclear application due to its heat resistance, low neutron absorbing cross-section, chemical inertness, and its rigidity as a structural material. These properties make it very favorable for high temperature environments such as in TRISO fuel and advanced reactor designs. Treatments such as n-doping, where carrier atoms are added to increase the number of free electrons, are expected to further improve properties such as thermal conductivity and electrical resistivity. Due to the high amount of neutron interactions in a nuclear reactor, it is expected that silicon carbide used in a reactor will be passively n-doped via transmutation. Studying the effects of n-doping in silicon carbide can help us better understand how the material will operate under real world conditions. We have found that n-doping the SiC increases both thermal and electrical conductivity, providing positive feedback under reactor usage. Previously it had been thought that under reactor conditions material properties of SiC could only degrade due to defects caused by neutron interactions. This study shows that transmutation doping can help to counteract and slow this process. This research shows that SiC can be used in nuclear reactor components contrasting with more costly and complicated alternative materials.

36 - MATERIALS SCIENCE↗

DOE OSTI2025

Stability, growth, and doping of In 2 (Si, Ge) 2 O 7 : Promising n -type wide-bandgap semiconductors

In this paper, we investigate, computationally and experimentally, the phase stability, electronic structure properties, and the propensity for n-type doping of In 2 X 2 O 7 (X = Si, Ge) ternary oxides. This family of materials contains promising novel wide-gap semiconductors based on their estimated high n-type Baliga figures of merit and acceptable thermal conductivity for power electronics applications. Here, we predict that both In 2 Si 2 O 7 and In 2 Ge 2 O 7 are n-type dopable, with Zr providing between 10 16 and above 10 21 cm −3 net donor concentrations under O-poor conditions, depending on the chemistry, structure (ground-state thortveitite or high-pressure pyrochlore), and synthesis temperature. To verify our predictions, we synthesize Zr-doped In 2 Ge 2 O 7 in the thortveitite structure and measure its electrical properties. Initial thin-film growth and annealing lead to polycrystalline thin films with bandgaps over 4 eV and confirm Zr doping predictions by achieving electron concentrations at 10 14 –10 16 cm −3 even under O-rich conditions. While future epitaxial growth development is still needed, this study establishes In 2 X 2 O 7 as promising n-type wide-gap semiconductors for power electronic applications.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Application of the van der Pauw method for electrical conductivity measurements at high temperatures using an insulating compressing ring

High quality data on the high temperature electrical properties of ceramics, particularly oxides, is of great value for material selection, design, and modeling for a broad range of emerging applications. Utilizing the mismatch in the coefficient of thermal expansion between two materials, a purely mechanical method for establishing electrical contact in the van der Pauw geometry to measure the bulk resistivity of ceramic disks at high temperatures is presented. Measurements of a reference material, 20 mol. % Gd-doped cerium oxide, are presented up to 1000 °C. The viability of electrical measurements up to a maximum temperature of 1600 °C is also considered. Measurements are performed using multiple techniques and compared to literature values finding excellent agreement. Finally, the approach described in this work enables the van der Pauw method to be applied to many ceramic materials over a wide range of temperatures and environments.

47 OTHER INSTRUMENTATION↗