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At least 181 records · Page 10

Microstrip proportional counter development at MSFC

Microstrip detectors are an exciting new development in proportional counter design fabricated using integrated circuit-type photolithography techniques; they therefore offer very high spatial accuracy and uniformity. A development program is underway at NASA-Marshall to produce large-area microstrips for use in an X-ray detector balloon flight program and to investigate the general performance limits of these new devices. Microstrips tested so far have been fabricated both in-house using standard photolithographic techniques and by an outside contractor using electron beam technology. Various substrate materials have been tested along with different electrode configurations. The distributions of pickup on subdivided cathodes on both top and bottom surfaces of the microstrips are also being investigated for use as two-dimensional imaging detectors. Data from these tests in the development of a large-area device will be presented.

Fulton, M. A.↗

NASA/ORNL/AFRL Project Work on EBM LSHR: Additive Manufacturing of High-Temperature Gamma-Prime Strengthened Ni-Based Superalloys

Powder-bed fabrication of aerospace alloys may revolutionize production by eliminating the need for extensive machining and expensive tooling. Heated-bed electron-beam melting (EBM) offers advantages over non-heated laser additive manufacturing (AM) methods, including lower residual stress, reduced risk of contamination, slower cooling rates, and faster build times. NASA Glenn Research Center has joint project work with Oak Ridge National Lab and the Air Force Research Laboratory to explore the feasibility of fabricating advanced Ni-based gamma-prime superalloys with EBM AM.

additive manufacturing↗

Electron Beam Welder Used to Braze Sapphire to Platinum

A new use for electron beam brazing was recently developed by NASA Lewis Research Center's Manufacturing Engineering Division. This work was done to fabricate a fiberoptic probe (developed by Sentec Corporation) that could measure high temperatures less than 600 deg C of vibrating machinery, such as in jet engine combustion research. Under normal circumstances, a sapphire fiber would be attached to platinum by a ceramic epoxy. However, no epoxies can adhere ceramic fibers to platinum under such high temperatures and vibration. Also, since sapphire and platinum have different thermal properties, the epoxy bond is subjected to creep over time. Therefore, a new method had to be developed that would permanently and reliably attach a sapphire fiber to platinum. Brazing a sapphire fiber to a platinum shell. The fiber-optic probe assembly consists of a 0.015-in.-diameter sapphire fiber attached to a 0.25-in.-long, 0.059-in.-diameter platinum shell. Because of the small size of this assembly, electron beam brazing was chosen instead of conventional vacuum brazing. The advantage of the electron beam is that it can generate a localized heat source in a vacuum. Gold reactive braze was used to join the sapphire fiber and the platinum. Consequently, the sapphire fiber was not affected by the total heat needed to braze the components together.

Forsgren, Roger C.↗

High Electron Mobility SiGe/Si Transistor Structures on Sapphire Substrates

SiGe/Si n-type modulation doped field effect structures and transistors (n-MODFETs) have been fabricated on r-plane sapphire substrates. The structures were deposited using molecular beam epitaxy, and antimony dopants were incorporated via a delta doping process. Secondary ion mass spectroscopy (SIMS) indicates that the peak antimony, concentration was approximately 4 x 10(exp19) per cubic cm. The electron mobility was over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively. At these two temperatures, the electron carrier densities were 1.6 and 1.33 x 10(exp 12) per sq cm, thus demonstrating that carrier confinement was excellent. Shubnikov-de Haas oscillations were observed at 0.25 K, thus confirming the two-dimensional nature of the carriers. Transistors, with gate lengths varying from 1 micron to 5 microns, were fabricated using these structures and dc characterization was performed at room temperature. The saturated drain current region extended over a wide source-to-drain voltage (V(sub DS)) range, with (V(sub DS)) knee voltages of approximately 0.5 V and increased leakage starting at voltages slightly higher than 4 V.

Alterovitz, Samuel A.↗

High Electron Mobility SiGe/Si Transistor Structures on Sapphire Substrates

SiGe/Si n-type modulation doped field effect structures and transistors (n-MODFETs) have been fabricated on r-plane sapphire substrates. The structures were deposited using molecular beam epitaxy, and antimony dopants were incorporated via a delta doping process. Secondary ion mass spectroscopy (SIMS) indicates that the peak antimony concentration was approximately 4 x 10(exp 19) per cubic centimeter. At these two temperatures, the electron carrier densities were 1.6 and 1.33 x 10(exp 12) per square centimeter, thus demonstrating that carrier confinement was excellent. Shubnikov-de Haas oscillations were observed at 0.25 K, thus confirming the two-dimensional nature of the carriers. Transistors, with gate lengths varying from 1 micron to 5 microns, were fabricated using these structures and dc characterization was performed at room temperature. The saturated drain current region extended over a wide source-to-drain voltage (V (sub DS)) range, with V (sub DS) knee voltages of approximately 0.5 V and increased leakage starting at voltages slightly higher than 4 V.

Alterovitz, Samuel A.↗

Enabling Propulsion Materials (EPM) Structural Component Successfully Tested Under Pseudo-Operating Conditions

A fabrication feasibility demonstration component for the Enabling Propulsion Materials (EPM) program was evaluated under prototypical engine loading conditions at the Structural Benchmark Test Facility at the NASA Lewis Research Center. The purpose for this test was to verify EPM casting, joining, coating, and life-prediction methods. Electron beam welding techniques developed in the EPM program were used to join two large superalloy cast sections of an exhaust nozzle flap to fabricate the demonstration component. After the joints were inspected, the component was coated with an oxidation-resistant barrier coating and was sent to Lewis for testing. The special test fixture shown in the photo (the Structural Benchmark Test Facility) was designed and built at Lewis to produce a biaxial bending condition similar to the loading condition this part would encounter during engine operation. Several finite element analyses were conducted to validate the mechanical test method. A floating furnace was then designed to provide prototypical thermal profiles in the component. An isothermal low-cycle fatigue test was used to evaluate the component at a cyclic load of 13 kN (maximum) to 1 kN (minimum) at a frequency of 1 Hz. Component failure was defined as a 30-percent increase in the component's compliance. On the basis of this definition, the low-cycle fatigue life of this component would be 35,000 cycles.

Bartolotta, Paul A.↗

Novel Overhang Support Designs for Powder-Based Electron Beam Additive Manufacturing (EBAM)

NASA Marshall Space Flight Center, in collaboration with the University of Alabama, has developed a contact-free support structure used to fabricate overhang-type geometries via EBAM. The support structure is used for 3-D metal-printed components for the aerospace, automotive, biomedical and other industries. Current techniques use support structures to address deformation challenges inherent in 3-D metal printing. However, these structures (overhangs) are bonded to the component and need to be removed in post-processing using a mechanical tool. This new technology improves the overhang support structure design for components by eliminating associated geometric defects and post-processing requirements.

Nabors, Sammy A.↗

Electron beam recorder image correction for ERTS

Video data from the Earth Resources Technology Satellite (ERTS) are entered into the initial image generation system and placed on film using an electron beam to correct for both radiometric and geometric errors, a hardware unit called EBRIC was designed, fabricated, and incorporated in the image processing system. It operates under the control of a process control computer, as it varies video signal and the x and y deflection signals of the EBR.

Heffner, P.↗

Silicon solar cell fabrication technology

The laser cell scanner was used to characterize a number of solar cells made in various materials. An electron beam-induced current (EBIC) study was performed using a stereoscan scanning electron microscope. Planar p-n junctions were analyzed. A theory for the EBIC based on the analytical solution of the ambipolar diffusion equation under the influence of electron beam excitation parameter z (which is related to beam penetration), the junction depth Z sub j, the beam current and the surface recombination, was formulated and tested. The effect of a grain boundary was studied.

Stafsudd, O. M.↗

Verification of computer-aided designs of traveling-wave tubes utilizing novel dynamic refocusers and graphite electrodes for the multistage depressed collector

A computational procedure for the design of TWT-refocuser-MDC systems was used to design a short dynamic refocusing system and highly efficient four-stage depressed collector for a 200-W, 8- to 18-GHz, TWT. The computations were carried out with advanced, multidimensional computer programs which model the electron beam as a series of disks of charge and follow their trajectories from the RF input of the TWT, through the slow-wave structure and refocusing section, to their points of impact in the depressed collector. Secondary emission losses in the MDC were treated semi-quantitatively by injecting a representative beam of secondary electrons into the MDC analysis at the point of impact of each primary beam. A comparison of computed and measured TWT and MDC performance showed very good agreement. The electrodes of the MDC were fabricated from a particular form of isotropic graphite that was selected for its low secondary electron yield, ease of machinability, and vacuum properties. This MDC was tested (at CW) for more than 1000 hr with negligible degradation in TWT and MDC performances.

Ramins, P.↗

Verification of an improved computational design procedure for TWT-dynamic refocuser-MDC systems with secondary electron emission losses

A computational procedure for the design of TWT-refocuser-MDC systems was used to design a short 'dynamic' refocusing system and highly efficient four-stage depressed collector for a 200-W 8-18-GHz TWT. The computations were carried out with advanced multidimensional computer programs which model the electron beam as a series of disks of charge and follow their trajectories from the RF input of the TWT, through the slow-wave structure and refocusing section, to their points of impact in the depressed collector. Secondary emission losses in the MDC were treated semiquantitatively by injecting a representative beam of secondary electrons into the MDC analysis at the point of impact of each primary beam. A comparison of computed and measured TWT and MDC performance showed very good agreement. The electrodes of the MDC were fabricated from a particular form of isotropic graphite that was selected for its low secondary electron yield, thermal expansion characteristics, ease of machinability and vacuum properties. This MDC was tested at CW for more than 1000 h with negligible degradation in TWT and MDC performances.

Ramins, P.↗

Optomechanical design of the grating laser beam combiner (GLBC) laser diode header

A laser diode header has been fabricated for a grating laser beam combiner (GLBC). The laser diode header provides the thermal control, the drive electronics, and the optical system necessary for proper operation of the beam combiner. The diode header is required to provide diffraction limited optical performance while providing correction for worst case defocus aberration, 0.6 mrad excess divergence, and worst case decenter aberration, 1.0 mrad pointing error. The design of the header considered the mechanical design and the optical design together resulting in a small, self-contained header with 0.7 mrad range for focus correction and +/- 2.5 mrad of beam steering. The complete diode header is currently undergoing optical and mechanical performance testing.

Rall, Jonathan A. R.↗

Simulation of a Miniature, Low-Power Time-of-Flight Mass Spectrometer for In Situ Analysis of Planetary Atmospheres

We are implementing nano- and micro-technologies to develop a miniaturized electron impact ionization mass spectrometer for planetary science. Microfabrication technology is used to fabricate the ion and electron optics, and a carbon nanotube (CNT) cathode is used to generate the ionizing electron beam. Future NASA planetary science missions demand miniaturized, low power mass spectrometers that exhibit high resolution and sensitivity to search for evidence of past and present habitability on the surface and in the atmosphere of priority targets such as Mars, Titan, Enceladus, Venus, Europa, and short-period comets. Toward this objective, we are developing a miniature, high resolution reflectron time-of-flight mass spectrometer (Mini TOF-MS) that features a low-power CNT field emission electron impact ionization source and microfabricated ion optics and reflectron mass analyzer in a parallel-plate geometry that is scalable. Charged particle electrodynamic modeling (SIMION 8.0.4) is employed to guide the iterative design of electron and ion optic components and to characterize the overall performance of the Mini TOF-MS device via simulation. Miniature (less than 1000 cubic centimeters) TOF-MS designs (ion source, mass analyzer, detector only) demonstrate simulated mass resolutions greater than 600 at sensitivity levels on the order of 10(exp -3) cps/molecule N2/cc while consuming 1.3 W of power and are comparable to current spaceflight mass spectrometers. Higher performance designs have also been simulated and indicate mass resolutions approximately 1000, though at the expense of sensitivity and instrument volume.

King, Todd T.↗

Fabrication of Phononic-Isolated Kinetic Inductance Detectors

Kinetic inductance detectors (KID) have received increased interest due to their relative ease of fabrication, low noise, and scalability to large format arrays required by next generation of astronomical telescopes. The development of KIDs has progressed rapidly, with very low noise equivalent power demonstrated by several groups and KIDs arrays implemented in several ground-based and air-borne instruments. In this paper, we describe a new fabrication process which consists of a membrane isolated KID incorporating a phononic bandgap structure tuned to block recombination phonons from escaping to the thermal bath. This architecture is designed to increase the quasi-particle lifetime and results in increased responsivity to signal photons and lower noise. These devices have been fabricated as lumped-element resonators with hafnium inductors and Nb capacitors on low stress silicon nitride and silicon-on-insulator membranes. We discuss the fabrication process, which uses a combination of sub-micron laser based direct write lithography and nanoscale electron beam lithography.

Denis, Kevin L.↗

Analytical and experimental performance of a dual-mode traveling wave tube and multistage depressed collector

A computational procedure for the design of traveling-wave-tube(TWT)/refocuser/multistage depressed collector (MDC) systems was used to design a short, permanent-magnet refocusing system and a highly efficient MDC for a medium-power, dual-mode, 4.8- to 9.6-GHz TWT. The computations were carried out with advanced, multidimensional computer programs which model the electron beam and follow the trajectories of representative charges from the radiofrequency (RF) input of the TWT, through the slow-wave structure and refocusing section, to their points of impact in the depressed collector. Secondary emission losses in the MDC were treated semiquantitatively by injecting representative secondary-electron-emission current into the MDA analysis at the point of impact of each primary beam. A comparison of computed and measured TWT and MDC performance showed very good agreement. The electrodes of the MDC were fabricated from a particluar form of isptropic graphite that was selected for its low secondary electron yield, ease of machinability, and vacuum properties.

Ramins, Peter↗

Artifacts for Calibration of Submicron Width Measurements

Artifacts that are fabricated with the help of molecular-beam epitaxy (MBE) are undergoing development for use as dimensional calibration standards with submicron widths. Such standards are needed for calibrating instruments (principally, scanning electron microscopes and scanning probe microscopes) for measuring the widths of features in advanced integrated circuits. Dimensional calibration standards fabricated by an older process that involves lithography and etching of trenches in (110) surfaces of single-crystal silicon are generally reproducible to within dimensional tolerances of about 15 nm. It is anticipated that when the artifacts of the present type are fully developed, their critical dimensions will be reproducible to within 1 nm. These artifacts are expected to find increasing use in the semiconductor-device and integrated- circuit industries as the width tolerances on semiconductor devices shrink to a few nanometers during the next few years. Unlike in the older process, one does not rely on lithography and etching to define the critical dimensions. Instead, one relies on the inherent smoothness and flatness of MBE layers deposited under controlled conditions and defines the critical dimensions as the thicknesses of such layers. An artifact of the present type is fabricated in two stages (see figure): In the first stage, a multilayer epitaxial wafer is grown on a very flat substrate. In the second stage, the wafer is cleaved to expose the layers, then the exposed layers are differentially etched (taking advantage of large differences between the etch rates of the different epitaxial layer materials). The resulting structure includes narrow and well-defined trenches and a shelf with thicknesses determined by the thicknesses of the epitaxial layers from which they were etched. Eventually, it should be possible to add a third fabrication stage in which durable, electronically inert artifacts could be replicated in diamondlike carbon from a master made by MBE and etching as described above.

Grunthaner, Frank↗

Miniaturized Environmental Scanning Electron Microscope for In Situ Planetary Studies

The exploration of remote planetary surfaces calls for the advancement of low power, highly-miniaturized instrumentation. Instruments of this nature that are capable of multiple types of analyses will prove to be particularly useful as we prepare for human return to the moon, and as we continue to explore increasingly remote locations in our Solar System. To this end, our group has been developing a miniaturized Environmental-Scanning Electron Microscope (mESEM) capable of remote investigations of mineralogical samples through in-situ topographical and chemical analysis on a fine scale. The functioning of an SEM is well known: an electron beam is focused to nanometer-scale onto a given sample where resulting emissions such as backscattered and secondary electrons, X-rays, and visible light are registered. Raster scanning the primary electron beam across the sample then gives a fine-scale image of the surface topography (texture), crystalline structure and orientation, with accompanying elemental composition. The flexibility in the types of measurements the mESEM is capable of, makes it ideally suited for a variety of applications. The mESEM is appropriate for use on multiple planetary surfaces, and for a variety of mission goals (from science to non-destructive analysis to ISRU). We will identify potential applications and range of potential uses related to planetary exploration. Over the past few of years we have initiated fabrication and testing of a proof-of-concept assembly, consisting of a cold-field-emission electron gun and custom high-voltage power supply, electrostatic electron-beam focusing column, and scanning-imaging electronics plus backscatter detector. Current project status will be discussed. This effort is funded through the NASA Research Opportunities in Space and Earth Sciences - Planetary Instrument Definition and Development Program.

Gaskin, Jessica↗

Evaluation of the ion implantation process for production of solar cells from silicon sheet materials

The objective of this program is the investigation and evaluation of the capabilities of the ion implantation process for the production of photovoltaic cells from a variety of present-day, state-of-the-art, low-cost silicon sheet materials. Task 1 of the program concerns application of ion implantation and furnace annealing to fabrication of cells made from dendritic web silicon. Task 2 comprises the application of ion implantation and pulsed electron beam annealing (PEBA) to cells made from SEMIX, SILSO, heat-exchanger-method (HEM), edge-defined film-fed growth (EFG) and Czochralski (CZ) silicon. The goals of Task 1 comprise an investigation of implantation and anneal processes applied to dendritic web. A further goal is the evaluation of surface passivation and back surface reflector formation. In this way, processes yielding the very highest efficiency can be evaluated. Task 2 seeks to evaluate the use of PEBA for various sheet materials. A comparison of PEBA to thermal annealing will be made for a variety of ion implantation processes.

Spitzer, M. B.↗