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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Abrasion and deformed layer formation of manganese-zinc ferrite in sliding contact with lapping tapes

Wear experiments were conducted using replication electron microscopy and reflection electron diffraction to study abrasion and the deformed layers produced in single-crystal Mn-Zn ferrite simulated heads during contact with lapping tapes. The crystaline state of the head is changed drastically during the abrasion process. Crystalline states ranging from nearly amorphous to highly textured polycrystalline can be produced on the wear surface of a single-crystal Mn-Zn ferrite head. The total thickness of the deformed layer was approximately 0.8 microns. This thickness increased as the load and abrasive grit size increased. The anisotropic wear of the ferrite was found to be inversely proportional to the hardness of the wear surface. The wear was lower in the order 211 111 10 0110. The wear of the ferrite increased markedly with an increase in sliding velocity and abrasive grit size.

Miyoshi, K.↗
NASA NTRS1983

The Correlation of Structural, Chemical, and Electronic Properties of Small Metal Particles and Their Alloys

The low pressure interaction of CO with small Ru particles supported on ultrahigh vacuum (UHV) cleaved mica was studied using flash thermal desorption, Auger electron microscopy, transmission electron microscopy, and transmission electron diffraction. Average particle sizes for these experiments varied between 1.2 and 16 nm. A careful search for CO decomposition on the Ru particles revealed no evidence of dissociaiton over a temperature range and pressure range of 300 to 550 C and 10 to the minus 11th power to 10 to the minus 6th millibar, respectively. Cas and heat treatments caused significant morphological changes and dispersion in the Ru particles, which affected CO desorptiom These effects were dependent on the particle size.

Source record↗
NASA NTRS1986

Surface modification strategies for (100)3C-SiC

Several surface modificaation techniques were performed in situ in an ultrahigh vacuum as part of a program to develop electrical contacts on the (100) face of cubic SiC. The Auger electron spectroscopy line shapes and peak-to-peak heights of the Si LVV and CKLL transitions indicated changes in surface stoichiometry, bonding, and short range order. Changes in the low-energy electron diffraction pattern identified changes in the symmetry of long range ordering on the surface. Heating above 1050 C depleted the surface of Si with an activation energy of 120 kcal/mol, resulting eventually in a disordered graphitic layer which was several atomic layers thick. Bombardment by Ar ions of energies greater than 1000 eV enhanced the Si to C ratio on the surface and destroyed the LEED pattern. Long range order was recovered by simultaneous heating and ion bombardment. Finally, adsorption of Cr on the Ar ion damaged surface and subsequent desorption left a reconstructed, p(2 x 1)Si enriched surface. Similar treatments with Al did not produce a surface reconstruction.

Bellina, J. J., Jr.↗
NASA NTRS1987

Effect of abrasive grit size on wear of manganese-zinc ferrite under three-body abrasion

Wear experiments were conducted using replication electron microscopy and reflection electron diffraction to study abrasion and deformed layers produced in single-crystal Mn-Zn ferrites under three-body abrasion. The abrasion mechanism of Mn-Zn ferrite changes drastically with the size of abrasive grits. With 15-micron (1000-mesh) SiC grits, abrasion of Mn-Zn ferrite is due principally to brittle fracture; while with 4- and 2-micron (4000- and 6000-mesh) SiC grits, abrasion is due to plastic deformation and fracture. Both microcracking and plastic flow produce polycrystalline states on the wear surfaces of single-crystal Mn-Zn ferrites. Coefficient of wear, total thickness of the deformed layers, and surface roughness of the wear surfaces increase markedly with an increase in abrasive grit size. The total thicknesses of the deformed layers are 3 microns for the ferrite abraded by 15-micron SiC, 0.9 microns for the ferrite abraded by 4-micron SiC, and 0.8 microns for the ferrite abraded by 1-micron SiC.

Miyoshi, Kazuhisa↗
NASA NTRS1987

Theoretical and material studies on thin-film electroluminescent devices

The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as accessed by x ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.

Summers, C. J.↗
NASA NTRS1987

Antiphase boundaries in epitaxially grown beta-SiC

When the surface of beta-SiC, grown epitaxially on (001) silicon by chemical vapor deposition, is chemically etched, boundaries appear which may be observed by optical or scanning electron microscopy. Examination by plan-view and cross-sectional transmission electron microscopy shows boundaries in the film which exhibit line or fringe contrast. Convergent beam electron diffraction has been used to show that these boundaries separate domains that are in an antiphase relationship to each other. A model is presented which discusses the formation of these domains from independent nucleation on a stepped substrate surface.

Pirouz, P.↗
NASA NTRS1988

Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAs

The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as assessed by X-ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.

Benz, R. G., II↗
NASA NTRS1989

Growing Gallium Arsenide On Silicon

Epitaxial layers of high quality formed on <111> crystal plane. Present work reports successful growth of 1- and 2-micrometer thick layers of n-type, 7-ohms per cm, 2-inch diameter, Si<111> substrate. Growth conducted in Riber-2300(R) MBE system. Both doped and undoped layers of GaAs grown. Chamber equipped with electron gun and camera for in-situ reflection high-energy-electron diffraction measurements. RHEED patterns of surface monitored continuously during slow growth stage.

Radhakrishnan, Gouri↗
NASA NTRS1989

Delayed Shutters For Dual-Beam Molecular Epitaxy

System of shutters for dual-molecular-beam epitaxy apparatus delays start of one beam with respect to another. Used in pulsed-beam equipment for deposition of low-dislocation layers of InAs on GaAs substrates, system delays application of arsenic beam with respect to indium beam to assure proper stoichiometric proportions on newly forming InAs surface. Reflectance high-energy electron diffraction (RHEED) instrument used to monitor condition of evolving surface of deposit. RHEED signal used to time pulsing of molecular beams in way that minimizes density of defects and holds lattice constant of InAs to that of GaAs substrate.

Grunthaner, Frank J.↗
NASA NTRS1988

Characterization of GaAlAs optical waveguide heterostructures grown by molecular beam epitaxy

Multiple-layer GaAlAs optical waveguide heterostructures have been grown by MBE. These samples were designed to operate at 840 nm with negligible coupling of guided light to the absorbing GaAs substrate. The Al concentration was 13 percent for the guiding layer and was 16 percent for the cladding layers. The process for growing waveguide layers was calibrated primarily by high-energy electron diffraction, with the optical quality confirmed by photoluminescence measurements. Channel waveguide structures having widths of 5 microns were etched in a low-pressure magnetically confined multipolar plasma reactor. The resulting waveguide structures were characterized by Raman spectroscopy, ellipsometry, AES, and optical-waveguide loss measurements.

Radens, C. J.↗
NASA NTRS1988

Formation of the lamellar structure in Group IA and IIID iron meteorites

Analytical EM, light microscopy, and electron microprobe analysis are used to study the lamellar plessite structure of Group IA and IIID iron meteorites. The alpha lamellae in IIID structures contained a compositional gradient from 6.1 + or - 0.7 wt pct Ni at the center of the alpha lamellae to 3.6 + or - 0.5 wt pct at the alpha/gamma interface. For the Group IA irons, compositions of 4 wt pct Ni in alpha and about 48 wt pct Ni in gamma are found. Convergent beam electron diffraction was used to characterize the orientation relations at the alpha/gamma interface in the lamellar regions of both Group IA and IIID. The phase transformations responsible for the observed lamellar structure in the IA and IIID chemical groups were also investigated.

Kowalik, J. A.↗
NASA NTRS1988

Transmission electron microscopy of composites

Since interphase-interfaces are often both the structurally weakest and chemically least stable regions of a composite material, they are critical determinants of such macrostructural characteristics as tensile strength and fracture toughness. Attention is presently given to the use of TEM for the study of interfaces between dissimilar materials; electron-diffraction, analytical, and high-resolution forms of TEM are employed, for the cases of both structural and semiconductor composites. The materials studied are SiC/Si, GaP/Si, and SiC fiber- and whisker-reinforced Si3N4.

Pirouz, P.↗
NASA NTRS1989

Epitaxial growth of InSb (111) on sapphire (0001)

Indium antimonide has been epitaxially grown directly on sapphire. Reflection high-energy electron diffraction, TEM, and SEM data are presented to show that the indium antimonide layer is epitaxial, has an abrupt interface with the sapphire, and grows in the 111-line direction. Mobility data show room-temperature mobilities as high as 10,000 sq cm/V s from some regions on the wafer.

Jamison, K. D.↗
NASA NTRS1988

Nucleation and growth of CrSi2 on Si(111)

The nucleation and growth of CrSi2 on Si(111) by MBE and solid-phase epitaxy (SPE), was investigated using SEM and TEM observations of 2-mm-thick layers grown under a variety of conditions, including the use of a CoSi2 buffer. During growth, the wafers were monitored in situ using reflection high-energy electron diffraction. Island growth was observed, with islands found to nucleate with three epitaxial orientations. The morphology of CrSi2 islands was found to be affected by the degree and direction of substrate misorientation, the growth technique, and the use of CoSi2 buffer. However, the reconstruction of the Si surface does not appear to be an important factor in controlling SPE growth.

Fathauer, R. W.↗
NASA NTRS1989

Tin in a chondritic interplanetary dust particle

Submicron platey Sn-rich grains are present in chondritic porous interplanetary dust particle (IDP) W7029 A and it is the second occurrence of a tin mineral in a stratospheric micrometeorite. Selected Area Electron Diffraction data for the Sn-rich grains match with Sn2O3 and Sn3O4. The oxide(s) may have formed in the solar nebula when tin metal catalytically supported reduction of CO or during flash heating on atmospheric entry of the IDP. The presence of tin is consistent with enrichments for other volatile trace elements in chondritic IDPs and may signal an emerging trend toward nonchondritic volatile element abundances in chondritic IDPs. The observation confirms small-scale mineralogical heterogeneity in fine-grained chondritic porous interplanetary dust.

Rietmeijer, Frans J. M.↗
NASA NTRS1990

Review of model sensor studies on Pd/SnO2(110) surfaces

Studies performed at the National Institute of Standards and Technology on the model gas sensor system, Pd/SnO2(110), are reviewed. Adsorption and interfacial effects play a primary role in the gas sensing process, as they do in catalysis. For this reason, researchers have used a variety of surface sensitive techniques in the research, including x ray and ultraviolet photoelectron spectroscopies (XPS and UPS), low energy electron diffraction (LEED), and ion scattering spectroscopy (ISS). By combining these complementary techniques with in situ gas response (conductance) measurements, researchers were able to correlate directly sensor activity with the composition and structure of the Pd/SnO2 interface. Although the intent of this work is to develop an understanding of gas sensing mechanisms, its relevance to Pt/SnO2 catalytic systems is obvious.

Fryberger, Teresa B.↗
NASA NTRS1990

Oxidation characteristics of Ti-14Al-21Nb ingot alloy

Static oxidation kinetics of Ti14Al21Nb (wt pct) ingot alloy were studied in air over the temperature interval of 649 to 1093 C in a thermogravimetric apparatus. The oxidation products were characterized by x ray diffraction, electron microprobe analysis, energy dispersive x ray analysis, and Auger electron spectroscopy. Cross-sections of the oxidized samples were also examined using light and scanning electron microscopy. The oxidation rate was substantially lower than the conventional alloys of titanium, but the kinetics displayed a complex behavior involving two or more oxidation rates depending on the temperature and duration of exposure. The primary oxide formed was TiO2, but this oxide was doped with Nb. Small amounts of Al2O3 and TiN were also present in the scale. Diffusion of oxygen into the alloy was observed and the diffusivity seemed to be dependent on the microstructure of the metal. A model was presented to explain the oxidation behavior of the alloy in terms of the reduction in the oxygen diffusivity in the oxide caused by the modification of the defect structure of TiO2 by Nb ions.

Sankaran, Sankara N.↗
NASA NTRS1990

Diamonds in detonation soot

Diamonds 4 to 7 nm in diameter have been identified and partially isolated from soot formed in detonations of carbon-forming composite explosives. The morphology of the soot has been examined by transmission electron microscopy (TEM), and the identity of the diamond has been established by the electron diffraction pattern of the TEM samples and by the X-ray diffraction (XRD) pattern of the isolated solid. Graphite is also present in the form of ribbons of turbostatic structure with a thickness of 2 to 4 nm. A fraction, about 25 percent of the soot by weight, was recovered from the crude soot after oxidation of the graphite with fuming perchloric acid. This fraction showed a distinct XRD pattern of diamond and the diffuse band of amorphous carbon. The IR spectrum of these diamonds closely matches that of diamonds recovered from meteorites (Lewis et al., 1987), perhaps indicating similar surface properties after the oxidation. If these diamonds are produced in the detonation itself or during the initial expansion, they exhibit a phenomenal crystal growth rate (5 nm/0.00001 s equal 1.8 m/hr) in a medium with a very low hydrogen/carbon ratio. Because the diamonds will be carried along with the expanding gases, they will be accelerated to velocities approaching 8 km/s.

Greiner, N. Roy↗