Electrical switchgear for large nuclear space power systems.
Electrical switchgear for high temperature and radiation in nuclear space power systems
RADIATION RESISTANCE↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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A phenomenon at the contacts of a sealed relay
Sealed relays for prevention of moisture condensation at contacts - electromagnetic switching relay
RELAY↗
High-powerC.W. transferred-electron oscillators
CW high power operation of transferred-electron oscillators realized by low thermal resistance, describing fabrication
Enstrom, R. E.↗
On the direction of electromigration in thin silver, gold, and copper films
Ion migration direction in thin Ag, Cu and Au films under direct current effect from resistance radioactive tracer measurements and scanning electron micrographs
Breitling, R. M.↗
Microscopic aspects of interfacial reactions in diffusion bonding processes
Microscopic aspects of interfacial reactions are discussed, such as interdiffusion, formation of intermetallic phases, generation and annihilation of lattice defects, effect of temperature, grain size, etc., which normally occur in diffusion bonding processes. Relationships between properties and microstructure in thin film couples are examined utilizing a unique combination of contact resistance measurements and characterization by transmission electron microscopy.
Shearer, M. P.↗
Deposit formation in hydrocarbon rocket fuels with an evaluation of a propane heat transfer correlation
A high pressure fuel coking testing apparatus was designed and developed and was used to evaluate thermal decomposition limits and carbon decomposition rates in heated copper tubes for hydrocarbon fuels. A commercial propane (90% grade) and chemically pure (CP) propane were tested. Heat transfer to supercritical propane was evaluated at 136 atm, bulk fluid velocities of 6 to 30 m/s, and tube wall temperatures in the range of 422 to 811 K. A forced convection heat transfer correlation developed in a previous test effort verified a prediction of most of the experimental data within a + or - 30% range, with good agreement for the CP propane data. No significant differences were apparent in the predictions derived from the correlation when the carbon resistance was included with the film resistance. A post-test scanning electron microprobe analysis indicated occurrences of migration and interdiffusion of copper into the carbon deposit.
Masters, P. A.↗
Coaxial carbon plasma gun deposition of amorphous carbon films
A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented.
Sater, D. M.↗
Progress in InP solar cell research
Progress, in the past year, in InP solar cell research is reviewed. Small area cells with AMO, total area efficiencies of 18.8 percent were produced by OMCVD and Ion Implantation. Larger area cells (2 and 4 sq cm) were processed on a production basis. One thousand of the 2 sq cm cells will be used to supply power to a small piggyback lunar orbiter scheduled for launch in February 1990. Laboratory tests of ITO/InP cells, under 10 MeV proton irradiation, indicate radiation resistance comparable to InP n/p homojunction cells. Computer modeling studies indicate that, for identical geometries and dopant concentrations, InP solar cells are significantly more radiation resistant than GaAs under 1 MeV electron irradiation. Additional computer modeling calculations were used to produce rectangular and circular InP concentrator cell designs for both the low concentration SLATS and higher concentration Cassegrainian Concentrators.
Weinberg, Irving↗
Low-Dielectric Polyimides
New process developed to produce aromatic condensation polyimide films and coatings having dielectric constants in range of 2.4 to 3.2. Materials better electrical insulators than state-of-the-art commercial polyimides. Several low-dielectric-constant polyimides have excellent resistance to moisture. Useful as film and coating materials for both industrial and aerospace applications where high electrical insulation, resistance to moisture, mechanical strength, and thermal stability required. Applicable to production of high-temperature and moisture-resistance adhesives, films, photoresists, and coatings. Electronic applications include printed-circuit boards, both of composite and flexible-film types and potential use in automotive, aerospace, and electronic industries.
St. Clair, Anne K.↗
Sequentially evaporated thin Y-Ba-Cu-O superconductor films: Composition and processing effects
Thin films of YBa2Cu3O(7-beta) have been grown by sequential evaporation of Cu, Y, and BaF2 on SrTiO3 and MgO substrates. The onset temperatures were as high as 93 K while T sub c was 85 K. The Ba/Y ratio was varied from 1.9 to 4.0. The Cu/Y ratio was varied from 2.8 to 3.4. The films were then annealed at various times and temperatures. The times ranged from 15 min to 3 hr, while the annealing temperatures used ranged from 850 C to 900 C. A good correlation was found between transition temperature (T sub c) and the annealing conditions; the films annealed at 900 C on SrTiO3 had the best T sub c's. There was a weaker correlation between composition and T sub c. Barium poor films exhibitied semiconducting normal state resistance behavior while barium rich films were metallic. The films were analyzed by resistance versus temperature measurements and scanning electron microscopy. The analysis of the films and the correlations are reported.
Valco, George J.↗
Progress in InP solar cell research
Progress, in the past year, in InP solar cell research is reviewed. Small area cells with AMO, total area efficiencies of 18.8 percent were produced by OMCVD and Ion Implantation. Larger area cells (2 and 4 sq cm) were processed on a production basis. One thousand of the 2 sq cm cells will be used to supply power to a small piggyback lunar orbiter scheduled for launch in February 1990. Laboratory tests of ITO/InP cells, under 10 MeV proton irradiation, indicate radiation resistance comparable to InP n/P homojunction cells. Computer modeling studies indicate that, for identical geometries and dopant concentrations, InP solar cells are significantly more radiation resistant than GaAs under 1 MeV electron irradiation. Additional computer modeling calculations were used to produce rectangular and circular InP concentrator cell designs for both the low concentration SLATS and higher concentration Cassegrainian Concentrators.
Weinberg, I.↗
Failure analysis of blistered gold plating on spot welded electrical relays
Gold-plated stainless-steel sideplates, part of a JPL Galileo spacecraft electronic-relay assembly, exhibited blistering after resistance spot welding. Unacceptable relays had heavy nonuniform gold electrodeposited layers with thicknesses 4.5-11.5 microns. SEM and metallographic investigations indicated much higher heat input generated during the resistance spot welding in unacceptable relays. The attributes of acceptable welded relays are contrasted with unacceptable relays; the possible mechanism of laminar formation of polymeric material in the gold plating is discussed; and some recommendations are provided to prevent similar problems.
Sokolowski, Witold↗
Selective equilibration among the current-carrying states in the quantum Hall regime
The Hall resistance of a two-dimensional electron gas is measured with gated probes to determine the extent of equilibration among the N current-carrying states in the quantum Hall regime. After traveling macroscopic distances, current injected into the first state is equilibrated among the N - 1 lowest states but equilibration into the highest state varies strongly across the Hall plateau. This is attributed to a change in the Nth state from being localized within a magnetic length of the edge to substantially extending into the sample.
Alphenaar, B. W.↗
Stacked-Gate FET's For Analog Memory Elements
Three-terminal, double-stacked-gate field-effect transistor (FET), developed as analog memory element. Particularly suited for use as synapse with variable connection strength in electronic neural network. Provides programmable, nonvolatile resistive connection, somewhat in manner of porous-gate FET described in "Porous-Floating-Gate Field-Effect Transistor" (NPO-17532). Resembles commercial erasable programmable read-only memory (EPROM) device, except for thickness of layers of silicon dioxide electrically isolating gates. Either p-channel or n-channel device.
Thakoor, Anilkumar P.↗
Dual ion beam processed diamondlike films for industrial applications
Single and dual beam ion source systems are used to generate amorphous diamondlike carbon (DLC) films, which were evaluated for a variety of applications including protective coatings on transmitting materials, power electronics as insulated gates and corrosion resistant barriers. A list of the desirable properties of DLC films along with potential applications are presented.
Mirtich, M. J.↗
Detector response in time-of-flight mass spectrometry at high pulse repetition frequencies
Dead time effects in chevron configured dual microchannel plates (MCPs) are investigated. Response times are determined experimentally for one chevron-configured dual MCP-type detector and two discrete dynode-type electron multipliers with 16 and 23 resistively divided stages. All of these detectors are found to be suitable for time-of-flight mass spectrometry (TOF MS), yielding 3-6-ns (FWHM) response times triggered on a single ion pulse. It is concluded that, unless there are viable solutions to overcome dead time disadvantages for continuous dynode detectors, suitable discrete dynode detectors for TOF MS appear to have a significant advantage for high repetition rate operation.
Gulcicek, Erol E.↗
A Miniature Palladium-Iron Thermometer for Temperatures Down to 0.05 K
Magnetic thermometers are appealing at temperatures below about 0.1 Kelvin, because the avoid the noise self-heating problems associated with resistive thermometers. In practical, metallic dilute electronic thermometers add the advantages of chemical stability, high thermal conductivity, and easy in heat sinking work we describe a palladium-iron thermometer which was designed to be small and conveniently packaged and optimized for use at temperatures down to 0.05 Kelvin. The device showed Curie-Weiss behavior above about 0.06 Kelvin, and we achieve 41 nK/ square root of z temperature resolution at a temperature of 49 mK. We describe the design and operation of this thermometers and present the test results.
Tuttle, Jim↗
Experiments on Evolving Software Models of Analog Circuits
Analog circuits are of great importance in electronic system design since the world is fundamentally analog in nature. While the amount of digital design activity far outpaces that of analog design, most digital systems require analog modules for interfacing with the external world. It was recently estimated that approximately 60% of digital application- specific integrated circuit designs incorporated analog circuits. With challenging analog circuit design problems and few analog design engineers, there are economic reasons for automating the analog design process, especially time-to-market considerations. Techniques for analog circuit design automation began appearing about two decades ago. These methods incorporated heuristics [6], knowledge bases [1], simulated annealing [5], and other algorithms. Efforts using techniques from evolutionary computation began appearing over the last few years. These include the use of genetic algorithms to select electronic component values (for example, the resistance value of a resistor), to select circuit topologies, and to design amplifiers using a limited set of canned topologies [4]. A genetic programming-based analog circuit design system has been demonstrated in which the circuit sizes, component values, and the circuit topologies are determined automatically [3]. The genetic-algorithm systems typically represent circuit structures as vectors of parameters encoded in binary strings, while the genetic programming system manipulates tree data structures.
Lohn, Jason D.↗