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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Influence of the space environment on some materials processing phenomena

The influence of the space environment on materials processing phenomena is studied by applying the principles of physical similarity to a system E on Earth and a system S in the microgravity environment of space. If these systems can be characterized by a set of dimensionless groups, then they are similar if corresponding members of the set are equal for E and S. Similarity is often impractical or impossible if Q is larger than a few samples. For example, there is a simple law of similarity for an isothermal liquid zone floating between inert solids; however, similarity is lost if the zone becomes nonisothermal. A molten zone during crystal growth is so complex that a complete set cannot be identified with certainty. A second example is double-diffusive convection during unidirectional solidification of a binary alloy. Results show that buoyancy driven fluid dynamical instabilities couple with constitutionally related instabilities quite differently in E and S.

Sekerka, R. F.↗
NASA NTRS1986

A graphical treatment of combined evaporation and segregation contributions to impurity profiles for zone-refining in vacuum

Impurity concentration profiles have been calculated for zone-refining when both segregation and evaporation of impurities are operative, assuming a uniform initial concentration. Graphic profiles are presented for selected values of effective segregation coefficient k, effective evaporation coefficient g, and number of zone passes n. Some examples of impurity profiles for float-zoned silicon are also presented.

Ciszek, T. F.↗
NASA NTRS1987

Quasi-containerless glass formation method and apparatus

Glass rods or fibers are prepared from a polycrystalline rod by heating a short section of the rod in a first furnace to form a molten zone of the rod, heating a second short section of the rod in a second furnace to form a second molten zone and gradually moving the furnaces apart from one another to form an elongated molten float zone, which is cooled in its midsection to produce a glass rod between the molten zones. In another embodiment a single moving furnace assembly and a precursor rod with compositional gradient sections, are used, and the moving furnace traverses the rod so that the molten portion is drawn out to a degree whereby a fiber of ultrapure glass is formed.

Naumann, Robert J.↗
NASA NTRS1991

Thermocapillary flow and natural convection in a melt column with an unknown melt/solid interface

A vertical melt column set up between an upper heating rod and a lower sample rod, i.e., the so-called half-zone system, is a convenient experimental tool for studying convection in the melt in floating-zone crystal growth. In order to help understand the convection observed in the melt column, a computer model has been developed to describe steady state, axisymmetrical thermocapillary flow and natural convection in the melt. The governing equations and boundary conditions are expressed in general non-orthogonal curvilinear coordinates in order to accurately treat the unknown melt/solid interface as well as all other physical boundaries in the system. The effects of key dimensionless variables on the following items are discussed: (1) convection and temperature distribution in the melt; (2) the shape of the melt/solid interface; (3) the height of the melt column. These dimensionless variables are the Grashof, Marangoni and Prandtl numbers.

Lan, C. W.↗
NASA NTRS1981

Ground based silicon zoning program

The preparation of building flight hardware and carrying out experiments in space was investigated. The ground based investigation phase A/B of the experimental float zoning of silicon is outlined. The overall program goals, leading to recommending experiments to be done in phase C/D are spelled out. Thermophysical properties which must be accurately known to compare thermophysical models to experimental zoning of silicon are listed.

Kern, E. L.↗
NASA NTRS1989

Center for the development of commercial crystal growth in space

The second year of operation of the Center for Commercial Crystal Growth in Space is described. This center is a consortium of businesses, universities and national laboratories. The primary goal of the Center's research is the development of commercial crystal growth in space. A secondary goal is to develop scientific understanding and technology which will improve commercial crystal growth on earth. In order to achieve these goals the Center's research is organized into teams by growth technique; melt growth, solution growth, and vapor growth. The melt growth team is working on solidification and characterization of bulk crystals of gallium arsenide and cadmium telluride. They used high resolution X-ray topography performed at the National Synchrotron Light Source at Brookhaven National Laboratory. Streak-like features were found in the diffraction images of semi-insulating undoped LEC GaAs. These were shown to be (110) antiphase boundaries, which have not been reported before but appear to be pervasive and responsible for features seen via less-sensitive characterization methods. The results on CdTe were not as definitive, but indicate that antiphase boundaries may also be responsible for the double peaks often seen in X-ray rocking curves of this material. A liquid encapsulated melt zone system for GaAs has been assembled and techniques for casting feed rods developed. It was found that scratching the inside of the quartz ampoules with silicon carbide abrasive minimized sticking of the GaAs to the quartz. Twelve floating zone experiments were done.

Wilcox, William R.↗
NASA NTRS1983

Microgravity silicon zoning investigation

A resistance heated zoner, suitable for early zoning experiments with silicon, was designed and put into operation. The initial power usage and size was designed for an shown to be compatible with payload carriers contemplated for the Shuttle. This equipment will be used in the definition and development of flight experiments and apparatus for float zoning silicon and other materials in microgravity.

Kern, E. L.↗
DOE OSTI2021

Influence of the Bulk Resistivity on Silicon Heterojunction Solar Cells and Module Reliability

Recent developments in industry on surface passivation open the possibility of using less doped substrates in silicon solar cells. In this report we investigate how the bulk resistivity affects the performance of silicon cells and the reliability of modules. Herein, n- and p-type silicon heterojunction cells with bulk resistivities between 3 and 15 000 Ωcm are studied. We measure the current–voltage characteristics of n-type cells across the resistivity range, and we find comparable responses to illumination intensities between 0.1 and 1 suns. The cells with bulk resistivities over 1000 Ωcm show breakdown voltages larger than -1000 V, almost two orders of magnitude higher than in typical commercial cells. Although modules have bypass-diodes to prevent cells from going into breakdown, higher breakdown voltages can improve the reliability of modules in case of bypass-diode failure and reduce the module cost by easing the number of bypass-diodes required. Finally, the cells have been submitted to light soaking. The float-zone p-type cells with bulk resistivities over 10 000 Ωcm are less sensitive to light-induced degradation than cells with bulk resistivities below 10 Ωcm. The former show to recover few hours after light soaking, while the latter recover only after dark annealing.

14 SOLAR ENERGY↗
DOE OSTI2022

Compositional screening of Ce-doped (Gd,Lu,Y) 3 (Al,Ga) 5 O 12 ceramics prepared by quenching from melt and their luminescence properties

Quenching from the melt using an Optical Floating Zone furnace was investigated as a possible high-throughput preparation method in order to screen novel scintillating materials. To validate this method, polycrystalline rare-earth aluminum garnets and yttrium gallium aluminum garnets were synthesized and characterized by X-ray diffraction, photoluminescence and radioluminescence emission spectra as well as radioluminescence imaging and compared to the previously reported properties of those materials. In order to achieve rapid, but quantitative comparison of the materials, pellets fabricated from the synthesized powders were sintered; two different sintering conditions were investigated and compared. Therefore, a simplistic energy deposition and light absorption model for brightness of opaque samples under X-ray irradiation was developed to estimate the relative scintillation efficiency of the materials. Based on the results, Y 3 Al 5 O 12 , LuY 2 Al 5 O 12 and GdY 2 Al 5 O 12 seem to have the highest scintillation efficiency among the prepared samples.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Single-Crystal Growth and Room-Temperature Magnetocaloric Effect of X-Type Hexaferrite Sr 2 Co 2 Fe 28 O 46

X-type hexaferrites have been receiving considerable attention due to their promising applications in many magnetic-electronic fields. However, the growth of single-crystal X-type hexaferrite is still a challenge. Herein we reported, for the first time, the preparation of single crystal X-type hexaferrite Sr 2 Co 2 Fe 28 O 46 (Sr 2 Co 2 X) with high-quality and large size using floating-zone method with laser as the heating source. The crystals show rhombohedral symmetry with space group of R-3m (No. 166, a = 5.8935(1) Å and c = 83.7438(17) Å). Co 2+ and Fe 3+ oxidation states were confirmed by the X-ray absorption near-edge spectroscopy. The prepared Sr 2 Co 2 X exhibits a spin reorientation transition from easy-cone to easy-axis at T 2 of 343 K and a ferrimagnetism–paramagnetism transition at Curie temperature (TC) of ~743 K. The spin reorientation transition was accompanied by magnetocaloric effect (MCE). Both conventional and inverse MCEs were observed near T 2 with a magnetic field applied along the c-axis. The maximum value of the magnetic entropy change along the c-axis was evaluated to be 1.1 J/kg·K for a magnetic field change of 5 T.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Pressure-Induced Phase Transitions in Bilayer La 3 Ni 2 O 7

La 3 Ni 2 O 7 differs from expectations in part because at ambient pressure, it exists in two polymorphs: an unconventional crystal structure with alternating layers of single- and triple-layered nickel−oxygen octahedra (i.e., La 2 NiO 4 plus La 4 Ni 3 O 10 , with the so-called 1313 crystal structure) and a classical double-layer Ruddlesden−Popper phase (i.e., La 3 Ni 2 O 7 , with the so-called 2222 crystal structure, which dominates at high pressure). In this study, we report the pressure-dependent structural and electrical resistive properties of single crystals of the classical double-layered La 3 Ni 2 O 7 , grown at slightly elevated pressure using the floating-zone method. Structural characterization under pressures up to 15.4 GPa reveals a gradual transition from orthorhombic to tetragonal symmetry that is completed at 12−14 GPa. Additionally, we present pressure and field-dependent electrical resistance measurements up to 27.4 GPa, from which we construct a phase diagram. Although a resistive transition at 80 K is observed at high pressures, the resistive hallmarks of superconductivity are not.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Chemical Passivation of Crystalline Si by Al 2 O 3 Deposited Using Atomic Layer Deposition: Implications for Solar Cells

The atomistic-level mechanism for the chemical passivation of the monocrystalline Si (c-Si) surface with thermally annealed Al 2 O 3 was studied using in situ infrared spectroscopy and photoconductance decay measurements. Al 2 O 3 was deposited on high-lifetime, float-zone c-Si substrates using atomic layer deposition (ALD) from trimethylaluminum (TMA), and H 2 O or O 3 . Surface-sensitive attenuated total reflection Fourier transform infrared spectroscopy was used to monitor the c-Si/Al 2 O 3 interface, as well as the bulk of the Al 2 O 3 film during the entire process. Our results show that some surface Si–H bonds are preserved after the ALD of Al 2 O 3 on H-terminated Si. During the annealing step at 400 °C, restructuring occurs at the c-Si/Al 2 O 3 interface to form interfacial SiO x . Isotope labeling was used to differentiate interfacial SiD bonds on the c-Si surface from H incorporated in Al 2 O 3 . Within the sensitivity of our infrared setup (~10 13 cm –2 ), we did not observe any net migration of atomic H or D from Al 2 O 3 to the c-Si/Al 2 O 3 interface. To isolate the effects of chemical and field-effect passivation of Al 2 O 3 thin films, we carried out surface passivation studies on c-Si/SiO 2 /Al 2 O 3 stacks. We also annealed these stacks in different atmospheres to test the influence of annealing atmospheres on the chemical passivation of c-Si by Al 2 O 3 and observed that O 2 -containing atmosphere led to the best surface chemical passivation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Kinetically stabilized ferroelectricity in bulk single-crystalline HfO 2 :Y

HfO 2 , a simple binary oxide, exhibits ultra-scalable ferroelectricity integrable into silicon technology. This material has a polymorphic nature, with the polar orthorhombic (Pbc2 1 ) form in ultrathin films regarded as the plausible cause of ferroelectricity but thought not to be attainable in bulk crystals. In this work, using a state-of-the-art laser-diode-heated floating zone technique, we report the Pbc2 1 phase and ferroelectricity in bulk single-crystalline HfO 2 :Y as well as the presence of the antipolar Pbca phase at different Y concentrations. Neutron diffraction and atomic imaging demonstrate (anti)polar crystallographic signatures and abundant 90°/180° ferroelectric domains in addition to switchable polarization with negligible wake-up effects. Density-functional-theory calculations indicate that the yttrium doping and rapid cooling are the key factors for stabilization of the desired phase in bulk. Our observations provide insights into the polymorphic nature and phase control of HfO 2 , remove the upper size limit for ferroelectricity and suggest directions towards next-generation ferroelectric devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Studies on the structure and the magnetic properties of high-entropy spinel oxide (MgMnFeCoNi)Al 2 O 4

The study of high-entropy materials has attracted enormous interest since they could show new functional properties that are not observed in their related parent phases. Here, we report single crystal growth, structure, thermal transport, and magnetic property studies on a novel high-entropy oxide with the spinel structure (MgMnFeCoNi)Al 2 O 4 . We have successfully grown high-quality single crystals of this high-entropy oxide using the optical floating zone growth technique for the first time. The sample was confirmed to be a phase pure high-entropy oxide using x-ray diffraction and energy-dispersive spectroscopy. Through magnetization measurements, we found (MgMnFeCoNi)Al 2 O 4 exhibits a cluster spin glass state, though the parent phases show either antiferromagnetic ordering or spin glass states. Furthermore, we also found that (MgMnFeCoNi)Al 2 O 4 has much greater thermal expansion than its CoAl 2 O 4 parent compound using high resolution neutron Larmor diffraction. We further investigated the structure of this high-entropy material via Raman spectroscopy and extended x-ray absorption fine structure spectroscopy (EXAFS) measurements. From Raman spectroscopy measurements, we observed (MgMnFeCoNi)Al 2 O 4 to display a combination of the active Raman modes in its parent compounds with the modes shifted and significantly broadened. This result, together with the varying bond lengths probed by EXAFS, reveals severe local lattice distortions in this high-entropy phase. Additionally, we found a substantial decrease in thermal conductivity and suppression of the low temperature thermal conductivity peak in (MgMnFeCoNi)Al 2 O 4 , consistent with the increased lattice defects and strain. These findings advance the understanding of the dependence of thermal expansion and transport on the lattice distortions in high-entropy materials.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Characterization of chromium impurities in β -Ga2O3

Chromium is a common transition-metal impurity that is easily incorporated during crystal growth. It is perhaps best known for giving rise to the 694.3 nm (1.786 eV) emission in Cr-doped Al2O3, exploited in ruby lasers. Chromium has also been found in monoclinic gallium oxide, a wide-bandgap semiconductor being pursued for power electronics. In this work, we thoroughly characterize the behavior of Cr in Ga2O3 through theoretical and experimental techniques. β-Ga2O3 samples are grown with the floating zone method and show evidence of a sharp photoluminescence signal, reminiscent of ruby. We calculate the energetics of formation of Cr from first principles, demonstrating that Cr preferentially incorporates as a neutral impurity on the octahedral site. Cr possesses a quartet ground-state spin and has an internal transition with a zero-phonon line near 1.8 eV. By comparing the calculated and experimentally measured luminescence lineshape function, we elucidate the role of coupling to phonons and uncover features beyond the Franck–Condon approximation. The combination of strong emission with a small Huang–Rhys factor of 0.05 and a technologically relevant host material renders Cr in Ga2O3 attractive as a quantum defect.

Turiansky, Mark E. (ORCID:0000000291543582)↗
DOE OSTI2021

Selection of the silicon sensor thickness for the Phase-2 upgrade of the CMS Outer Tracker

During the operation of the CMS experiment at the High-Luminosity LHC the silicon sensors of the Phase-2 Outer Tracker will be exposed to radiation levels that could potentially deteriorate their performance. Previous studies had determined that planar float zone silicon with n-doped strips on a p-doped substrate was preferred over p-doped strips on an n-doped substrate. The last step in evaluating the optimal design for the mass production of about 200 m$^{2}$ of silicon sensors was to compare sensors of baseline thickness (about 300 μm) to thinned sensors (about 240 μm), which promised several benefits at high radiation levels because of the higher electric fields at the same bias voltage. This study provides a direct comparison of these two thicknesses in terms of sensor characteristics as well as charge collection and hit efficiency for fluences up to 1.5 × 10$^{15}$ n$_{eq}$/cm$^{2}$. The measurement results demonstrate that sensors with about 300 μm thickness will ensure excellent tracking performance even at the highest considered fluence levels expected for the Phase-2 Outer Tracker.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Synthesis, disorder and Ising anisotropy in a new spin liquid candidate PrMgAl 11 O 19

Here we report the successful synthesis of large single crystals of triangular frustrated PrMgAl 11 O 19 using the optical floating zone technique. Single crystal x-ray diffraction (XRD) measurements unveiled the presence of quenched disorder within the mirror plane, specifically ~7% of Pr ions deviating from the ideal 2d site towards the 6h site. Magnetic susceptibility measurements revealed an Ising anisotropy with the c-axis being the easy axis. Despite a large spin–spin interaction that develops below ~10 K and considerable site disorder, the spins do not order or freeze down to at least 50 mK. The availability of large single crystals offers a distinct opportunity to investigate the exotic magnetic state on a triangular lattice with an easy axis out of the plane.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Origin of Intrinsically Low Thermal Conductivity in a Garnet-Type Solid Electrolyte: Linking Lattice and Ionic Dynamics with Thermal Transport

Understanding thermal transport in solid electrolytes is essential for improving the performance, reliability, and safety of all-solid-state batteries. Garnet-type lithium-ion conductors are promising candidates for solid electrolytes, yet their thermal-transport mechanisms remain poorly understood. Here, we connect the lattice and ion dynamics of single-crystal garnet-type Li 6.5 La 3 Zr 1.5 Ta 0.5 O 12 to its intrinsically low thermal conductivity. Our study reveals that the single crystals grown by the floating-zone method exhibit remarkably low glasslike thermal conductivity. Using first-principles calculations and inelastic-neutron-scattering measurements, we identify both the acoustic and numerous optical phonon modes, which stem from the complex crystal structure of the material. Notably, a low-energy optical branch exhibits an avoided crossing with acoustic phonons near 7 meV. These optical modes can enhance the scattering of heat-carrying acoustic phonons and reduce thermal conductivity. Furthermore, the calculated Grüneisen parameters are large, especially for the vibrational modes around 6 meV, indicating strong anharmonicity, with a noticeable contribution from lithium-ion vibrations. A two-channel thermal-transport model is employed to describe the weak temperature dependence of the thermal conductivity, which can be attributed to the substantial contribution of diffuson transport facilitated by the abundance of optical phonons and intrinsic anharmonicity. These results offer valuable insights into the thermal transport in a broad class of ionic conductors of interest for energy conversion and storage applications.

Ab initio calculations↗