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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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171 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS1999

Measurement of Temperature Fluctuations and Microscopic Growth Rates in a Silicon Floating Zone and Microgravity

A silicon crystal growth experiment has been accomplished using the floating-zone technique under microgravity on a sounding rocket (TEXUS 36). Measurements of temperature fluctuations in the silicon melt zone due to time dependent thermocapillary convection (Marangoni convection) and an observation of the microscopic growth rate were simultaneously performed during the experiment. Temperature fluctuations of about 0.5 - 0.7 C with a frequency range < 0.5Hz were detectable. The microscopic growth rate fluctuates considerably around the average growth rate of 1 mm/min: Growth rates up to 3 to 4mm/min, close to zero mm/min, as well as negative values (backmelting) were observed. Dopant striations are clearly visible in the Sb-doped crystal. They were characterized by Spreading Resistance measurements and Differential Interference Contrast microscopy. The frequencies of temperature fluctuations, microscopic growth rates, and the dopant inhomogeneities correspond quite well, with main frequencies between 0.1 and 0.3 Hz. 3D numerical simulations were performed to predict the optimum position of the temperature sensor, and the characteristic temperature amplitudes and frequencies. At a position 3.4mm above the interface and 1.4mm inside the melt, equivalent to the sensor tip position in the experiment, temperature fluctuations up to 1.8 C and frequencies ? 0.25Hz were found in the simulations.

Schweizer, Markus↗
NASA NTRS2003

Creep Resistance of ZrO2 Ceramic Improved by the Addition of a Small Amount of Er2O3

Zirconia (ZrO2) has great technological importance in structural, electrical, and chemical applications. It is the crucial component for state-of-the art thermal barrier coatings and an enabling component as a solid electrolyte for solid-oxide fuel cell systems. Pure ZrO2 is of limited use for industrial applications because of the phase transformations that occur. Upon the addition of stabilizers, cubic (c-ZrO2) and tetragonal (t-ZrO2) forms can be preserved. It is the stabilized and partially stabilized forms of zirconia that function as thermal barrier coatings, solid electrolytes, and oxygen sensors and that have numerous applications in the electrochemical industry. The cubic form of ZrO2 is typically stabilized through Y2O3 additions. However, Y2O3-stabilized zirconia is susceptible to deformation at high temperatures (greater than 900 C) because of the large number of slip systems and the high oxygen diffusion rates, which result in high creep rates at high temperatures. Successful use of ZrO2 at high temperatures requires that new dopant additives be found that will retain or enhance the desirable properties of cubic ZrO2 and yet produce a material with lower creep rates. At the NASA Glenn Research Center, erbium oxide (Er2O3) was identified as a promising dopant for improving the creep resistance of. ZrO2. The selection of Er2O3 was based on the strong interactions of point defects and dislocations. Single crystals of 5 mol% Er2O3- doped ZrO2 rods (4 mm in diameter) and monofilaments (200 to 300 mm in diameter and 30 cm long) were grown using the laser-heated float zone technique, and their creep behavior was measured as a function of temperature. The addition of 5 mol% Er2O3 to single-crystal ZrO2 improved its creep resistance at high temperatures by 2 to 3 orders of magnitude over state-of-the-art Y2O3-doped crystals. Detailed microstructural characterization of ZrO2-Er2O3 single crystals has identified new mechanisms for improving the creep resistance of this class of materials. Adding Er2O3 to ZrO2 results in microstructure of stable and metastable tetragonal precipitates that with thermal treatment evolve to a tweed structure of nanosize tetragonal lamellae. The superior high-temperature creep resistance of Er2O3-doped ZrO2 is attributed to nanoscale precipitation hardening. Doping with Er2O3 will significantly increase the upper-use temperature limit of ZrO2. Potential applications include using Er2O3-doped ZrO2 as a high-temperature fiber for structural applications and adding Er2O3 to reduce the sintering rates of ZrO2 thermal barrier coatings. This work was conducted at Dpto. de F sica de la Materia Condensada, Universidad de Sevilla, Spain, and at NASA Glenn.

Martinez-Fernandez, Julian↗
NASA NTRS1998

The Role of Marangoni Convection for the FZ-Growth of Silicon

In growing crystals by the floating zone (FZ) technique under microgravity, the size restriction we have under earth conditions because of the hydrostatic pressure are avoided. Further, buoyancy related convection is eliminated to a high degree. But in the case of silicon, the gravity independent thermocapillary (Marangoni) convection is time-dependent even for small zone geometries. This has been demonstrated in several Technische Experimente unter Schwerelosigkeit (TEXUS) - technical experiments under reduced gravity) flights. Thus, to really take advantage of microgravity with respect to improve crystal quality, tools are required to control Marangoni convection in space facilities. Applying magnetic fields, convection can be influenced; fluid flow can either be damped (static magnetic fields) or overlaid by a regular flow regime (rotating magnetic fields). In floating zones of 8-10mm diameter and height (Ma approximately equals 6 x 10(exp 3)), a static magnetic field of about 2OOmT is sufficient to suppress time-dependent Marangoni convection to a high degree, but in dependence on the kind and the concentration of the added dopant, a new type of strongly pronounced dopant inhomogeneities have been detected. They are originated by thermoelectromagnetic convection. This can be avoided as well as detrimental effects on the radial dopant distribution by using rotating magnetic fields instead of static ones. Applying 75mT/50Hz to the FZ, the intensity of the dopant fluctuations is reduced to a high degree. Considering the rather low power consumption of rotating magnetic fields, this will be a useful tool for control or elimination of time-dependent Marangoni convection under microgravity. The strong time dependent character of thermocapillary flow and its influence on the temperature field has been measured in silicon half-zones for Marangoni numbers of Ma is approximately equal to 1-1.5 x 10(exp 4): temperature fluctuations up to 4C have been determined. Their frequency range was 0.1 and 0.4 Hz. Between certain thermocouple or sensor pairs, strong correlation has been detected.

Dold, P.↗
NASA NTRS1999

The Role of Marangoni Convection for the FZ-Growth of Silicon

Growing crystals by the floating zone (FZ) technique under microgravity avoids the size restriction we have under earth conditions due to hydrostatic pressure. Further, buoyancy related convection is eliminated to a great degree. But in the case of silicon, the gravity independent thermocapillary (Marangoni) convection is time-dependent even for small zone geometries. This has been demonstrated in several Technische Experimente unter Schwerelosigkeit (TEXUS) technical experiments under reduced gravity flights. Thus, to really take advantage of microgravity with respect to improved crystal quality, tools are required to control Marangoni convection in space facilities. With the application of magnetic fields, convection can be influenced; fluid flow can either be damped (static magnetic fields) or overlaid by a regular flow regime (rotating magnetic fields). In floating zones of 8-10 mm diameter and height (i.e., Ma is much greater than 6X 10(exp 3), a static magnetic field of about 2OOmT is sufficient to suppress time-dependent Marangoni convection to a high degree, but in dependence on the kind and the concentration of the added dopant, a new type of strongly pronounced dopant inhomogeneities have been detected. They are originated by thermoelectromagnetic convection. This can be avoided as well as detrimental effects on the radial dopant distribution by using rotating magnetic fields instead of static ones. Applying 7.5mT/5OHz to the FZ, the intensity of the dopant fluctuations is reduced to a high degree. Considering the rather low power consumption of rotating magnetic fields, this will be a useful tool for control or elimination of time-dependent Marangoni convection under microgravity. The strong time-dependent character of thermocapillary flow and its influence on the temperature field has been measured in silicon half-zones for Marangoni numbers of Ma is much greater than l - 1.5 X 10(exp 4): temperature fluctuations up to 4C have been determined, their frequency range was 0.4 and 0.4Hz. Between certain thermocouple or sensor pairs, strong correlation has been detected.

Dold, P.↗
DOE OSTI2024

Effect of Approach Speed and Electrode Geometry on Electrostatic Discharges Off Floating Dielectrics

With the damaging effects of electrostatic discharges (ESDs), it is important to study them within various parameter regimes relevant to real-world scenarios. One such scenario studied here is a floating dielectric with no nearby ground plane with a grounded object approaching at a high rate of speed. One may encounter this scenario when moving objects by hand. Discharge current and radiated fields are captured for discharges drawn from polytetrafluoroethylene (PTFE) and poly methyl methacrylate (PMMA) with approach speeds ranging from 20 to 100 mm/s. Previous studies have shown that at lower speeds in metal-to-metal or metal-to-ground backed dielectric geometries, the peak current and discharge distance decrease with increasing speed. However, in the speed range studied here, an increase in distance and current are observed for increasing speed. Namely, the highest speeds coincide with the highest peak currents and discharge distances of approximately 800 mA and up to 24 mm. Further, with no grounded backing, as opposed to setups in other ESD studies, the electric field between the dielectric and an approaching electrode has a more uniform distribution with highest fields at the electrode, which is elucidated to be the driving factor in the differences revealed in this study. Two spheres of differing diameters and a conical electrode are used to draw discharges off the dielectric surfaces. Captured radiated fields via B-dot sensor, plasma imagery via intesified charge-coupled device (ICCD), and mapping of surface potential reveal that a majority of the energy lost during a discharge goes to gas losses and radiated fields.

36 MATERIALS SCIENCE↗
NASA NTRS1997

High-Temperature Extensometry and PdCr Temperature-Compensated Wire Resistance Strain Gages Compared

A detailed experimental evaluation is underway at the NASA Lewis Research Center to compare and contrast the performance of the PdCr/Pt dual-element temperature-compensated wire resistance strain gage with that of conventional high-temperature extensometry. The advanced PdCr gage, developed by researchers at Lewis, exhibits desirable properties and a relatively small and repeatable apparent strain to 800 C. This gage represents a significant advance in technology because existing commercial resistance strain gages are not reliable for quasi-static strain measurements above approx. 400 C. Various thermal and mechanical loading spectra are being applied by a high-temperature thermomechanical uniaxial testing system to evaluate the two strain-measurement systems. This is being done not only to compare and contrast the two strain sensors, but also to investigate the applicability of the PdCr strain gage to the coupon-level specimen testing environment typically employed when the high-temperature mechanical behavior of structural materials is characterized. Strain measurement capabilities to 800 C are being investigated with a nickel-base superalloy, Inconel 100 (IN 100), substrate material and application to TMC's is being examined with the model system, SCS-6/Ti-15-3. Furthermore, two gage application techniques are being investigated in the comparison study: namely, flame-sprayed and spot welding. The apparent strain responses of both the weldable and flame-sprayed PdCr wire strain gages were found to be cyclically repeatable on both IN 100 and SCS-6/Ti-15-3 [0]_8. In general, each gage exhibited some uniqueness with respect to apparent strain behavior. Gages mounted on the IN 100 specimens tended to show a repeatable apparent strain within the first few cycles, because the thermal response of IN 100 was stable. This was not the case, however, for the TMC specimens, which typically required several thermal cycles to stabilize the thermal strain response. Thus, progressive changes in the apparent strain behavior were corroborated by the extensometer, which unlike the mounted gage can distinguish quantitative changes in the material's thermal strain response. One specimen was instrumented with both a fixed and floating gage. From the difference in output of these two gages, the thermal expansion strains were calculated. These data, which are given in the figure, show excellent agreement with the values measured by the high-temperature extensometry.

Source record↗
NASA NTRS2011

Fast Plasma Investigation for MMS: Simulation of the Burst Triggering System

The Magnetospheric Multiscale (MMS) mission will study small-scale reconnection structures and their rapid motions from closely spaced platforms using instruments capable of high angular, energy, and time resolution measurements. To meet these requirements, the Fast Plasma Instrument (FPI) consists of eight (8) identical half top-hat electron sensors and eight (8) identical ion sensors and an Instrument Data Processing Unit (IDPU). The sensors (electron or ion) are grouped into pairs whose 6 degree x 180 degree fields-of-view (FOV) are set 90 degrees apart. Each sensor is equipped with electrostatic aperture steering to allow the sensor to scan a 45 degree x 180 degree fan about the its nominal viewing (0 deflection) direction. Each pair of sensors, known as the Dual Electron Spectrometer (DES) and the Dual Ion Spectrometer (DIS), occupies a quadrant on the MMS spacecraft and the combination of the eight electron/ion sensors, employing aperture steering, image the full-sky every 30-ms (electrons) and 150-ms (ions), respectively. To probe the diffusion regions of reconnection, the highest temporal/spatial resolution mode of FPI results in the DES complement of a given spacecraft generating 6.5-Mb (raised dot) per second of electron data while the DIS generates 1.1-Mb (raised dot) per second of ion data yielding an FPI total data rate of 6.6-Mb (raised dot) per second. The FPI electron/ion data is collected by the IDPU then transmitted to the Central Data Instrument Processor (CIDP) on the spacecraft for science interest ranking. Only data sequences that contain the greatest amount of temporal/spatial structure will be intelligently down-linked by the spacecraft. This requires a data ranking process known as the burst trigger system. The burst trigger system uses pseudo physical quantities to approximate the local plasma environments. As each pseudo quantity will have a different value, a set of two scaling factors is employed for each pseudo term. These pseudo quantities are then combined at the instrument, spacecraft, and observatory level leading to a final ranking of data based on expected scientific interest. Here, we present simulations of the fixed point burst trigger system for the FPI. A variety of data sets based on previous mission data as well as analytical formulations are tested. Comparisons of floating point calculations versus the fixed point hardware simulation are shown. Analysis of the potential sources of error from overflows, quantization, etc. are examined and mitigation methods are presented. Finally a series of calibration curves are presented, showing the expected error in pseudo quantities based solely on the scale parameters chosen and the expected data range. We conclude with a presentation of the current base-lined FPI burst trigger approach.

Barrie, A. C.↗
NASA NTRS2012

Multicolor Detectors for Ultrasensitive Long-Wave Imaging Cameras

A document describes a zeptobolometer for ultrasensitive, long-wavelength sensors. GSFC is developing pixels based on the zeptobolometer design that sense three THz wavelengths simultaneously. Two innovations are described in the document: (1) a quasiparticle (QO) filter arrangement that enables a compact multicolor spectrum at the focal plane, and (2) a THz antenna readout by up to three bolometers. The innovations enable high efficiency by greatly reducing high, frequency-dependent microstrip losses, and pixel compactness by eliminating the need for bulky filters in the focal plane. The zeptobolometer is a small TES bolometer, on the scale of a few microns, which can be readily coupled through an impedance-matching resistor to a metal or dielectric antenna. The bolometer is voltage-biased in its superconducting transition, allowing the use of superconducting RF multiplexers to read out large arrays. The antenna is geometrically tapped at three locations so as to efficiently couple radiation of three distinct wavelengths to the individual TESs. The transition edge hot electrons in metals offer a simple, compact arrangement for antenna readout, which can be crucial in the THz where line losses at high frequencies can be substantial. A metallic grill filter acts as a high-pass filter and directs the low-frequency components to a location where they will be absorbed. The absorption spectrum shows that three well-separated THz bands are feasible. The filters can be made from high-purity dielectrics such as float zone silicon or sapphire.

Brown, Ari↗
NASA NTRS1998

The Role of Marangoni Convection for the FZ-Growth of Silicon

Fluctuations of the electrical resistivity due to inhomogeneous dopant distribution are still a serious problem for the industrial processing yield of doped silicon crystals. In the case of silicon floating-zone growth, the main sources of these inhomogeneities are time- dependent flows in the liquid phase during the growth process. Excluding radio frequency (RF) induced convection, buoyancy and thermocapillary (Marangoni) convection are the two natural reasons for fluid flow. Both originate from temperature/concentration gradients in the melt, buoyancy convection through thermal/concentrational volume expansion, and thermocapillary convection through the temperature/concentration dependence of the surface tension. To improve the properties of grown crystals, knowledge of the strength, the characteristic, and the relation of these two flow mechanisms is essential. By the use of microgravity, the effect and the strength of buoyancy (gravity dependent) and thermocapillary (gravity independent) convection can be separated and clarified. Applying magnetic fields, both convective modes can be influenced: fluid flow can either be damped (static magnetic fields) or overlaid by a regular flow regime (rotating magnetic fields). Two complementary approaches have been pursued: Silicon full zones (experiments on the German sounding rockets TEXUS 7, 12, 22, 29, and 36) with the maximum temperature at half of the zone height and silicon half zones (experiments on the Japanese sounding rockets TR-IA4 and 6) with the maximum temperature at the top of the melt. With the full zone arrangement, the intensity and the frequency of the dopant striations could be determined and the critical Marangoni number could be identified. The half zone configuration is suited to classify the flow pattern and to measure the amplitude and the frequency of temperature fluctuations in the melt by inserting thermocouples or temperature sensors into the melt. All experiments have been carried out in monoellipsoid mirror furnaces. Typical zone geometries are approx. 8 to 14 mm in diameter and height. The crystals grown under microgravity are compared to crystals grown in static axial magnetic fields (B<5 tesla) and in transversal rotating magnetic fields (B<7.5 mT / f=50 Hz). Experimental results are completed by 3D numerical simulations: the obtained temperature and concentration distribution in the melt confirm the damping effect of rotating magnetic fields and explain the change in the radial segregation under static magnetic fields.

Dold, P.↗