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NASA NTRS2004

Homoepitaxial and Heteroepitaxial Growth on Step-Free SiC Mesas

This article describes the initial discovery and development of new approaches to SiC homoepitaxial and heteroepitaxial growth. These approaches are based upon the previously unanticipated ability to effectively supress two-dimensional nucleation of 3C-SiC on large basal plane terraces that form between growth steps when epitaxy is carried out on 4H- and 6H-SiC nearly on-axis substrates. After subdividing the growth surface into mesa regions, pure stepflow homoeptixay with no terrace nucleation was then used to grow all existing surface steps off the edges of screw-dislocation-free mesas, leaving behind perfectly on-axis (0001) basal plane mesa surfaces completely free of atomic-scale steps. Step-free mesa surfaces as large as 0.4 mm x 0.4 mm were experimentally realized, with the yield and size of step-free mesas being initally limited by substrate screw dislocations. Continued epitaxial growth following step-free surface formation leads to the formation of thin lateral cantilevers that extend the step-free surface area from the top edge of the mesa sidewalls. By selecting a proper pre-growth mesa shape and crystallographic orientation, the rate of cantilever growth can be greatly enhanced in a web growth process that has been used to (1) enlarge step-free surface areas and (2) overgrow and laterally relocate micropipes and screw dislocations. A new growth process, named step-free surface heteroepitaxy, has been developed to achieve 3C-SiC films on 4H- and 6H-SiC substrate mesas completely free of double positioning boundary and stacking fault defects. The process is based upon the controlled terrace nucleation and lateral expansion of a single island of 3C-SiC across a step-free mesa surface. Experimental results indicate that substrateepilayer lattice mismatch is at least partially relieved parallel to the interface without dislocations that undesirably thread through the thickness of the epilayer. These results should enable realization of improved SiC homojunction and heterojunction devices. In addition, these experiments offer important insights into the nature of polytypism during SiC crystal growth.

Neudeck, Philip G.↗

NASA NTRS2023

Tree Growth Enhancement Drives a Persistent Biomass Gain in Unmanaged Temperate Forests

While enhanced tree growth over the last decades has been reported in forests across the globe, it remains unclear whether it drives persistent biomass increases of forest stands, particularly in mature forests. Enhanced tree growth and stand-level biomass are often linked with a simultaneous increase in density-driven mortality and a reduction in tree longevity. Identifying empirical evidence regarding the balance between these processes is challenging due to the confounding effects of stand history, management, and environmental changes. Here, we investigate the link between growth and biomass via the negative relationship between average tree size and stand density (tree number per area). We find increasing stand density for a given mean tree size in unmanaged closed-canopy forests in Switzerland over the past six decades and a positive relationship between tree growth and stand density across forest plots—qualitatively consistent with our simulations using a mechanistic, cohort-resolving ecosystem model (BiomeE). Model simulations show that, in the absence of other disturbances, enhanced tree growth persistently increases biomass stocks despite simultaneous decreases in carbon residence time and tree longevity. However, the magnitude of simulated biomass changes for a given growth enhancement critically depends on the shape of the mortality functions. Our analyses reconcile reports of growth-induced reductions of tree longevity with model predictions of persistent biomass increases, and with our finding of trends toward denser forests in response to growth—also in mature stands.

biomass stocks↗

NASA NTRS1966

Surface spikes - A perturbation of growth steps.

During the growth of NiBr 2 crystals by sublimation, it has been observed that in addition to the mechanism of growth spirals a secondary mode of nucleation can occur. This is an accelerated growth which appears in the form of surface spikes on growth steps. The surface spikes may move as much as 50 times faster than the unperturbed growth steps. The mechanism of formation is believed to begin with the nucleation of a liquid droplet which wets the growth step and produces the accelerated growth from the liquid phase. The growth occurs at 500°C below the melting point of NiBr 2 . It is believed that the nucleation of the liquid phase at these temperatures is impurity controlled.

Nickel compound↗

NASA NTRS1994

Tomato root growth, gravitropism, and lateral development: correlation with auxin transport

Tomato (Lycopersicon esculentum, Mill.) roots were analyzed during growth on agar plates. Growth of these roots was inhibited by the auxin transport inhibitors naphthylphthalamic acid (NPA) and semicarbazone derivative I (SCB-1). The effect of auxin transport inhibitors on root gravitropism was analyzed by measurement of the angle of gravitropic curvature after the roots were reoriented 90 degrees from the vertical. NPA and SCB-1 abolished both the response of these roots to gravity and the formation of lateral roots, with SCB-1 being the more effective at inhibition. Auxins also inhibited root growth. Both auxins tested has a slight effect on the gravity response, but this effect is probably indirect, since auxins reduced the growth rate. Auxins also stimulated lateral root growth at concentration where primary root growth was inhibited. When roots were treated with both IAA and NPA simultaneously, a cumulative inhibition of root growth was found. When both compounds were applied together, analysis of gravitropism and lateral root formation indicated that the dominant effect was exerted by auxin transport inhibitors. Together, these data suggest a model for the role of auxin transport in controlling both primary and lateral root growth.

Non-NASA Center↗

NASA NTRS2004

Ethylene production throughout growth and development of plants

Ethylene production by 10 or 20 m2 stands of wheat, soybean, lettuce, potato, and tomato was monitored throughout growth and development in an atmospherically closed plant chamber. Chamber ethylene levels varied among species and rose during periods of canopy expansion and rapid growth for all species. Following this, ethylene levels either declined during seed fill and maturation for wheat and soybean, or remained relatively constant for potato and tomato (during flowering and early fruit development). Lettuce plants were harvested during rapid growth and peak ethylene production. Chamber ethylene levels increased rapidly during tomato ripening, reaching concentrations about 10 times that measured during vegetative growth. The highest ethylene production rates during vegetative growth ranged from 1.6 to 2.5 nmol m-2 d-1 during rapid growth of lettuce and wheat stands, or about 0.3 to 0.5 nmol g-1 fresh weight per hour. Estimates of stand ethylene production during tomato ripening showed that rates reached 43 nmol m-2 d-1 in one study and 93 nmol m-2 d-1 in a second study with higher lighting, or about 50x that of the rate during vegetative growth of tomato. In a related test with potato, the photoperiod was extended from 12 to 24 hours (continuous light) at 58 days after planting (to increase tuber yield), but this change in the environment caused a sharp increase in ethylene production from the basal rate of 0.4 to 6.2 nmol m-2 d-1. Following this, the photoperiod was changed back to 12 h at 61 days and ethylene levels decreased. The results suggest three separate categories of ethylene production were observed with whole stands of plants: 1) production during rapid vegetative growth, 2) production during climacteric fruit ripening, and 3) production from environmental stress.

NASA Discipline Life Support Systems↗

NASA NTRS1976

Hydrogen enhanced crack growth in 18 Ni maraging steels

The kinetics of sustained-load subcritical crack growth for 18 Ni maraging steels in high-purity hydrogen are examined using the crack-tip stress intensity factor K as a measure of crack driving force. Crack growth rate as a function of stress intensity exhibited a clearly defined K-independent stage (Stage II). Crack growth rates in an 18 Ni (grade 250) maraging steel are examined for temperatures from -6 to +100 C. A critical temperature was observed above which crack growth rates became diminishingly small. At lower temperatures the activation energy for Stage II crack growth was found to be 16.7 plus or minus 3.3 kJ/mole. Temperature and hydrogen partial pressure are shown to interact in a complex manner to determine the apparent Kth (stress intensity level below which no observable crack growth occurs) and the crack growth behavior. Comparison of results on '250' and '300' grades of 18 Ni maraging steel indicate a significant influence of alloy composition and/or strength level on the crack growth behavior.

Hudak, S. J., Jr.↗

NASA NTRS1981

Crack tip deformation and fatigue crack growth

Recent research on fatigue crack growth is summarized. Topics discussed include the use of the differential stress intensity factor to characterize crack tip deformation, the use of the unzipping model to study the growth of microcracks and the fatigue crack growth in a ferritic-martensitic steel, and the development of a model of fatige crack growth threshold. It is shown that in the case of small yielding, the differential stress intensity factor provides an adequate description of cyclic plastic deformation at the crack tip and correlates well with the crack growth rate. The unzipping model based on crack tip shear decohesion process is found to be in good agreement with the measured crack growth and striation spacing measurements. The proposed model of crack growth threshold gives correct predictions of the crack growth behavior in the near-threshold region.

Liu, H.-W.↗

NASA NTRS1985

A computer simulation of thin film nucleation and growth: The Volmer-Weber case

The computer simulation of thin film nucleation and growth, which was previously performed for the case of single monolayer, was modified to include multilayer growth via the Volmer-Weber mechanism. The simulation results show that: (1) the kinetics of multilayer film growth is nearly identical to that of monolayer growth; (2) when no reevaporation takes place, the cluster density resulting from multilayer growth is higher at high coverage than that resulting from monolayer growth; (3) when reevaporation does take place, the cluster density resulting from multilayer growth is nearly identical to that resulting from monolayer growth. This is not due, however, to similarity in microstructure.

Salik, J.↗

NASA NTRS1986

Protein crystal growth; Proceedings of the First International Conference, Stanford University, CA, August 14-16, 1985

Papers are presented on mechanisms of nucleation and growth of protein crystals, the role of purification in the crystallization of proteins and nucleic acids, and the effect of chemical impurities in polyethylene glycol on macromolecular crystallization. Also considered are growth kinetics of tetragonal lysozyme crystals, thermodynamic and kinetic considerations for crystal growth of complex molecules from solution, protein single-crystal growth under microgravity, and growth of organic crystals in a microgravity environment. Papers are also presented on preliminary investigations of protein crystal growth using the Space Shuttle, convective diffusion in protein crystal growth, and the growth and characterization of membrane protein crystals.

Feigelson, R. S.↗

NASA NTRS1989

Center for the development of commercial crystal growth in space

The second year of operation of the Center for Commercial Crystal Growth in Space is described. This center is a consortium of businesses, universities and national laboratories. The primary goal of the Center's research is the development of commercial crystal growth in space. A secondary goal is to develop scientific understanding and technology which will improve commercial crystal growth on earth. In order to achieve these goals the Center's research is organized into teams by growth technique; melt growth, solution growth, and vapor growth. The melt growth team is working on solidification and characterization of bulk crystals of gallium arsenide and cadmium telluride. They used high resolution X-ray topography performed at the National Synchrotron Light Source at Brookhaven National Laboratory. Streak-like features were found in the diffraction images of semi-insulating undoped LEC GaAs. These were shown to be (110) antiphase boundaries, which have not been reported before but appear to be pervasive and responsible for features seen via less-sensitive characterization methods. The results on CdTe were not as definitive, but indicate that antiphase boundaries may also be responsible for the double peaks often seen in X-ray rocking curves of this material. A liquid encapsulated melt zone system for GaAs has been assembled and techniques for casting feed rods developed. It was found that scratching the inside of the quartz ampoules with silicon carbide abrasive minimized sticking of the GaAs to the quartz. Twelve floating zone experiments were done.

Wilcox, William R.↗

NASA NTRS1989

Growth of a mat-forming photograph in the presence of UV radiation

Knowledge of the survival and growth of microorganisms in the presence of ultraviolet radiation is important for understanding the potential for life to exist in environments exposed to high fluxes of UV radiation. The growth of a mat-forming phototrophic prokaryote, Chloroflexus aurantiacus, was examined in the presence of continuous high UV irradiation under otherwise optimal growth conditions. Evidence was sought for an intrinsic ability to grow in the presence of UV radiation in a carefully chosen organism known to be unusually resistant to UV radiation, of ancient lineage among the phototrophs, to resemble ancient microfossils from the Precambrian, and to be a mat-former. It was assumed that even a high intrinsic UV resistance would be inadequate for survival and growth in the presence of very high UV fluxes, and iron (Fe3+) was selected as a common, abundant UV-absorbing substance that might protest microorganisms growing in or under iron-bearing sediments. The effectiveness of Fe(3+) was tested as a UV protective agent at low concentrations in thin layers. It was concluded that intrinsic UV resistance in some organisms may account for growth, not just survival, of these organisms when exposed to high UV fluxes under otherwise optimal growth conditions in an anoxic environment. It was also concluded that Fe(3+) bearing sediments of 1 mm or less in thickness may provide an adequate shield against high UV fluxes permitting the growth of microorganisms just below their surface. As long as growth conditions were met, then the evolution and development of microorganisms would not be hampered by high UV fluxes impinging upon the surface of iron-bearing sediments.

Pierson, Beverly K.↗

NASA NTRS1991

Enhancement of wave growth for warm plasmas with a high-energy tail distribution

The classical linear theory of electromagnetic wave growth in a warm plasma is considered for waves propagating parallel to a uniform ambient magnetic field. Wave-growth rates are calculated for ion-driven right-hand mode waves for Kappa and Maxwellian particle distribution functions and for various values of the spectral index, the temperature anisotropy, and the ratio of plasma pressure to magnetic pressure appropriate to the solar wind. When the anisotropy is low the wave growth is limited to frequencies below the proton gyrofrequency and the growth rate increases dramatically as the spectral index is reduced. The growth rate for any Kappa distribution greatly exceeds that for a Maxwellian with the same bulk properties. For large thermal anisotropy the growth rate from either distribution is greatly enhanced. The growth rates from a Kappa distribution are generally larger than for a Maxwellian distribution, and significant wave growth occurs over a broader range of frequencies.

Thorne, Richard M.↗

NASA NTRS1992

Effects of constraint on crack growth under aircraft spectrum loading

The objective is to study the effects of constraint on fatigue crack growth under aircraft spectrum loading. A plasticity-induced crack-closure model that accounts for constraint variations during the transition from flat-to-slant crack growth was used to correlate crack-growth rate data under constant-amplitude loading and to calculate crack growth under simulated aircraft spectrum loading. The model was applied to several thin-sheet aluminum alloy materials. Under laboratory air conditions, the transition was shown to be related to the size of the cyclic plastic zone based on the effective stress-intensity factor range for several sheet materials and thicknesses. Results from three-dimensional, elastic-plastic, finite-element analyses of a flat, straight-through crack in a thin-sheet aluminum alloy specimen showed a constraint loss similar to that assumed in the model. Using test data and the closure model, the location of the constraint-loss regime in terms of growth rate and the value of the constraint factor at these rates were determined by trial and error. The model was then used to calculate crack growth under the TWIST spectrum. The calculated results agreed reasonably well with test data. In general, the model predicted shorter crack-growth lives than tests under the TWIST spectrum by about 40 percent. For the TWIST spectrum clipped at Level 3, the calculated lives were within about 20 percent. The results demonstrated that constraint variations, especially for thin-sheet alloys, should be accounted for to predict crack growth under typical aircraft spectra.

Newman, J. C., Jr.↗

NASA NTRS1993

The growth of small corrosion fatigue cracks in alloy 2024

The corrosion fatigue crack growth characteristics of small surface and corner cracks in aluminum alloy 2024 is established. The damaging effect of salt water on the early stages of small crack growth is characterized by crack initiation at constituent particle pits, intergranular microcracking for a less than 100 micrometers, and transgranular small crack growth for a micrometer. In aqueous 1 percent NaCl and at a constant anodic potential of -700 mV(sub SCE), small cracks exhibit a factor of three increase in fatigue crack growth rates compared to laboratory air. Small cracks exhibit accelerated corrosion fatigue crack growth rates at low levels of delta-K (less than 1 MPa square root of m) below long crack delta-K (sub th). When exposed to Paris regime levels of crack tip stress intensity, small corrosion fatigue cracks exhibit growth rates similar to that observed for long cracks. Results suggest that crack closure effects influence the corrosion fatigue crack growth rates of small cracks (a less than or equal to 100 micrometers). This is evidenced by similar small and long crack growth behavior at various levels of R. Contrary to the corrosion fatigue characteristics of small cracks in high strength steels, no pronounced chemical crack length effect is observed for Al by 2024 exposed to salt water.

Piascik, Robert S.↗

NASA NTRS1993

Growth of Si spherical crystals and the surface oxidation (M-9)

Nearly 90 percent of semiconductor devices are produced with Si single crystals as the starting materials. For instance, the integrated circuits (IC), which are used in almost all electronic equipments such as TV, tape recorders, audio amplifiers, etc., are made after various processings of Si single crystal wafers. In these wafers, the same controlled amounts of impurities are added and the uniformities in their distributions are extremely important. Growth under microgravity makes it possible to eliminate the buoyancy-driven convection in the melt, which is one of the main origins of convections which results in non-uniformity of the impurity. Another source of convection is known as Marangoni convection which is driven on the free surface when a temperature gradient occurs. One of the merits of microgravity experimentation is that the detailed study of this convection becomes possible. Another important advantage of microgravity is that growth of crystals without a crucible is possible. This makes it possible to study melt growth without the strain which is usually introduced on the ground. Nevertheless, we should repeat and analyze many growth experiments in space to get reliable results. However, since in the FMPT, the time for the experiment is limited, we plan to carry out two kinds of very simple and basic experiments as the first step for the semiconductor growth experiment. In the first experiment, we use single crystal Si sphere as the starting material and as shown, this sphere is heated in the furnace at a slightly higher temperature than the melting point. After the melting front moves nearly half way to its center, the temperature is decreased to stop the melting and to start the growth from the seed for which we use the unmelted solid party of the sphere. The sphere is centered by quartz protuberances inside of the quartz crucible. There exists the possibility of temperature fluctuations being introduced when the molten sphere occasionally touches the protuberances. The total time needed for the melting and the growth processes is estimated to be 30 minutes. Infrared emission from the sphere is monitored in order to prevent the accidental loss of the central solid core. The schematical illustration of the second experient is shown. A single crystal, Si rod is used as the starting material. In the first stage, the rod is melted from one end to obtain a liquid sphere. In the second stage, the single crystal is grown by decreasing the temperature from the unmelted part of the rod which is used as the seed. The second experient somewhat resembles the Czochralski method used on the ground; however, in the space experiment, no crucible is employed and the temperature uniformity is much superior. In both experiments, phosphorous is doped to allow observation of the change in the shape of the liquid solid interface during crystal growth and the impurity striations, if any.

Nishinaga, Tatau↗

NASA NTRS2004

Numerical Simulation of Nanostructure Growth

Nanoscale structures, such as nanowires and carbon nanotubes (CNTs), are often grown in gaseous or plasma environments. Successful growth of these structures is defined by achieving a specified crystallinity or chirality, size or diameter, alignment, etc., which in turn depend on gas mixture ratios. pressure, flow rate, substrate temperature, and other operating conditions. To date, there has not been a rigorous growth model that addresses the specific concerns of crystalline nanowire growth, while demonstrating the correct trends of the processing conditions on growth rates. Most crystal growth models are based on the Burton, Cabrera, and Frank (BCF) method, where adatoms are incorporated into a growing crystal at surface steps or spirals. When the supersaturation of the vapor is high, islands nucleate to form steps, and these steps subsequently spread (grow). The overall bulk growth rate is determined by solving for the evolving motion of the steps. Our approach is to use a phase field model to simulate the growth of finite sized nanowire crystals, linking the free energy equation with the diffusion equation of the adatoms. The phase field method solves for an order parameter that defines the evolving steps in a concentration field. This eliminates the need for explicit front tracking/location, or complicated shadowing routines, both of which can be computationally expensive, particularly in higher dimensions. We will present results demonstrating the effect of process conditions, such as substrate temperature, vapor supersaturation, etc. on the evolving morphologies and overall growth rates of the nanostructures.

Hwang, Helen H.↗

NASA NTRS2001

Spatiotemporal relationships between growth and microtubule orientation as revealed in living root cells of Arabidopsis thaliana transformed with green-fluorescent-protein gene construct GFP-MBD

Arabidopsis thaliana plants were transformed with GFP-MBD (J. Marc et al., Plant Cell 10: 1927-1939, 1998) under the control of a constitutive (35S) or copper-inducible promoter. GFP-specific fluorescence distributions, levels, and persistence were determined and found to vary with age, tissue type, transgenic line, and individual plant. With the exception of an increased frequency of abnormal roots of 35S GFP-MBD plants grown on kanamycin-containing media, expression of GFP-MBD does not appear to affect plant phenotype. The number of leaves, branches, bolts, and siliques as well as overall height, leaf size, and seed set are similar between wild-type and transgenic plants as is the rate of root growth. Thus, we conclude that the transgenic plants can serve as a living model system in which the dynamic behavior of microtubules can be visualized. Confocal microscopy was used to simultaneously monitor growth and microtubule behavior within individual cells as they passed through the elongation zone of the Arabidopsis root. Generally, microtubules reoriented from transverse to oblique or longitudinal orientations as growth declined. Microtubule reorientation initiated at the ends of the cell did not necessarily occur simultaneously in adjacent neighboring cells and did not involve complete disintegration and repolymerization of microtubule arrays. Although growth rates correlated with microtubule reorientation, the two processes were not tightly coupled in terms of their temporal relationships, suggesting that other factor(s) may be involved in regulating both events. Additionally, microtubule orientation was more defined in cells whose growth was accelerating and less stringent in cells whose growth was decelerating, indicating that microtubule-orienting factor(s) may be sensitive to growth acceleration, rather than growth per se.

NASA Discipline Plant Biology↗

NASA NTRS1992

The role of calcium in growth induced by indole-3-acetic acid and gravity in the leaf-sheath pulvinus of oat (Avena sativa)

Leaf-sheath pulvini of excised segments from oat (Avena sativa L.) were induced to grow by treatment with 10 micromoles indole-3-acetic acid (IAA), gravistimulation, or both, and the effects of calcium, EGTA, and calcium channel blockers on growth were evaluated. Unilaterally applied calcium (10 mM CaCl2) significantly inhibited IAA-induced growth in upright pulvini but had no effect on growth induced by either gravity or gravity plus IAA. Calcium alone had no effect on upright pulvini. The calcium chelator EGTA alone (10 mM) stimulated growth in upright pulvini. However, EGTA had no effect on either IAA- or gravity-induced growth but slightly diminished growth in IAA-treated gravistimulated pulvini. The calcium channel blockers lanthanum chloride (25 mM), verapamil (2.5 mM), and nifedipine (2.5 mM) greatly inhibited growth as induced by IAA (> or = 50% inhibition) or IAA plus gravity (20% inhibition) but had no effect on gravistimulated pulvini. Combinations of channel blockers were similar in effect on IAA action as individual blockers. Since neither calcium ions nor EGTA significantly affected the graviresponse of pulvini, we conclude that apoplastic calcium is unimportant in leaf-sheath pulvinus gravitropism. The observation that calcium ions and calcium channel blockers inhibit IAA-induced growth, but have no effect on gravistimulated pulvini, further supports previous observations that gravistimulation alters the responsiveness of pulvini to IAA.

Non-NASA Center↗