A theoretical model for the elevated temperature deformation of dispersion hardened metals.
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Technique using boron effectively protects metal-oxide semiconductor devices from ionizing radiation without using shielding materials. Boron is introduced into insulating gate oxide layer at semiconductor-insulator interface.
Sliding friction experiments were conducted with iron, copper, and aluminum in contact with iron in various states of strain. The surfaces were examined in dry sliding and with various benzyl compounds applied as lubricants. Friction experiments were conducted with a hemispherical rider contacting a flat disk at loads of from 50 to 600 grams with a sliding speed of 0.15 cm/min. Results indicate that straining increases friction for dry sliding and for surfaces lubricated with certain benzyl structures such as dibenzyl disulfide. With other benzyl compounds (e.g., benzyl formate), friction coefficients are lower for strained than for annealed iron.
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Stronger amine-cured polyepoxides can be obtained by using those diaminobenzophenones and diaminodiphenylmethanes that have amine groups located at ortho or meta positions to carbonyl or methylene groups joining two benzene rings.
Tests were performed on two simply supported plates of aluminum alloy 2024-0, under a central concentrated load, with peak deflections up to 2.6 times the thickness. The load was provided by a small-diameter hard-steel rod. The plates had diameter-to-thickness ratios (D/h) of 20 and 41. Measurements were made of load, deflections and strains; membrane and bending strains were calculated from the test data. The test data are presented in comparison with theoretical predictions generated by the finite-element-computer code PLANS, which includes material and geometric nonlinearities. The theoretical prediction was excellent for deflections, and generally good for strains, when the central force was represented by a line load around the loading rod's contact circle.
A class of easy-to-prepare heterocyclic-aromatic polymers which can be used for matrices in reinforced laminates is described. These polymers can be cured after B-staging with very little evolution of volatile materials, and they retain a low melt-viscosity which leads to low-void laminates. Resins are stable at temperatures below 150 C. Properties of composites with various reinforcements, in particular carbon-fiber unidirectional laminates, are described, and the fire behavior of PSP-glass laminates is reported.
Tests performed to determine accuracy and efficiency of bus separators used in microprocessors are presented. Functional, AC parametric, and DC parametric tests were performed in a Tektronix S-3260 automated test system. All the devices passed the functional tests and yielded nominal values in the parametric test.
By including specific process modifications the effect of ion implantation on radiation hardness can be minimized and radiation hard ion implanted MOS circuits can be fabricated. The experimental procedure followed was to examine key processing steps (with respect to radiation hardness) on ion-implanted individual PMOS transistors. The individual transistors were evaluated by continuously monitoring the threshold voltage as the transistors were being irradiated. By comparing runs it was possible to deduce what is considered a radiation hard ion implanted process. Tests with a complex LSI PMOS IC processor chip containing over 2000 transistors and resistors were also conducted
The microstructure of Class I lodestones was investigated by X-ray diffraction and by optical and transmission electron microscopy, and the behavior of lodestone magnetization was studied at temperatures of 4 to 825 K. It was found that intense magnetization is associated with the gamma Fe2O3-Fe3O4 intergrowth. Thermal demagnetization of the lodestone studied was nearly complete at 300 C. The loss of natural remanence was found to be associated with transformation of gamma Fe2O3 to alpha Fe2O3.
A star scanner for the Galileo Project is described. Because it must function in the intense Jupiter radiation field, which consists primarily of high-energy electrons and protons, this star scanner is designed with radiation-hardness as a prime objective. The optics and the multiplier phototube are specially designed to minimize fluorescence and Cerenkov effects, and the electronic components to minimize ionization and displacement damage. The star-scanner layout provides maximum shielding for the optics and phototube. Test results predict successful operation in the expected Jovian radiation environment.
Surface fatigue tests were conducted on two groups of AISI 9310 spur gears. Both groups were manufactured with standard ground tooth surfaces, with the second group subjected to an additional shot peening process on the gear tooth flanks. The gear pitch diameter was 8.89 cm (3.5 in.). Test conditions were a gear temperature of 350 K (170 F), a maximum Hertz stress of 1.71 billion N/sq m (248,000 psi), and a speed of 10,000 rpm. The shot peened gears exhibited pitting fatigue lives 1.6 times the life of standard gears without shot peening. Residual stress measurements and analysis indicate that the longer fatigue life is the result of the higher compressive stress produced by the shot peening. The life for the shot peened gear was calculated to be 1.5 times that for the plain gear by using the measured residual stress difference for the standard and shot peened gears. The measured residual stress for the shot peened gears was much higher than that for the standard gears.
Surveys of available Analog to Digital Converters (ADC) suitable for precision applications showed that none have the proper combination of accuracy and radiation hardness to meet space and/or strategic weapon requirements. A development program which will result in an ADC device which will serve a number of space and strategic applications. Emphasis was placed on approaches that could be integrated onto a single chip within three to five years.
(Previously cited in issue 21, p. 3643, Accession no. A81-44138)
Scanning electron spectroscopy, X-ray diffractometry, Auger electron spectroscopy, and microhardness measurements, are used to study the surfaces of 4340-steel samples that have been borided in a cold RF plasma which had been initiated in a gas mixture of 2.7 percent diborane in Ar. As a result of the dislocation of the diborane in the plasma, boron is deposited on the surface of the steel substrate and two crystalline phases, tetragonal Fe2B and orthorhombic FeB, are formed. The formation of boride phases then increases the surface microhardness from 2650 MPa to a maximum value of 7740 MPa.
Single-event upsets reduced by use of oversize transistors. Computers made less susceptible to ionizing radiation by replacing bipolar integrated circuits with properly designed, complementary metaloxide-semiconductor (CMOS) circuits. CMOS circuit chips made highly resistant to single-event upset (SEU), especially when certain feedback resistors are incorporated. Redesigned chips also consume less power than original chips.
The objective of this task was to obtain chemical information on MOS test samples. Toward this end, high resolution X-ray photoemission spectroscopy (XPS) has been the primary techniques used to characterize the chemistry and structure of the SiO2/Si interface for a variety of MOS structures with differing degrees of susceptibility to damage by ionizing radiation. The major accomplishments of this program are: (1) the identification of a structurally distinct region of SiO2 in the near-interfacial region of thermal SiO2 on Si; (2) the identification in the near-interfacial region of SiO2 structural differences between radiation hard and soft gate oxides; (3) the direct observation of radiation-induced damage sites in thermal SiO2 with XPS using in situ electron stress; (4) the correlation of suboxide state distributions at the SiO2/Si interface with processing parameters and radiation susceptibility; (5) the development of a chemical mechanism for radiation-induced interface state generation in SiO2/Si structures; and (6) the development benign chemical profiling techniques which permit the investigation of oxide/semiconductor structures using surface sensitive electron spectroscopic techniques.