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At least 181 records · Page 10

UV-Induced Degradation of High-Efficiency Solar Cells with Different Architectures

The ultraviolet-induced degradation (UVID) of solar panels is associated with the deterioration of cell performance and reduced reliability of packaging materials. Here we examine the UV stability of different architectures of high-efficiency solar cells without any encapsulation. Identical UV exposure tests were performed at two different labs using UVA-340 fluorescent lamps under different electrical bias configurations (open- or short-circuit) and irradiated cell surfaces (for bifacial technologies). Cell technologies, including heterojunction (HJ), interdigitated back-contact cells (IBC), passivated emitter rear contact (PERC), passivated emitter rear totally-diffused (PERT), are found to be more susceptible to UVID, leading to significant Isc loss (up to 4%) and P max loss (up to 15%) as compared to the conventional back surface field (Al-BSF) cells after exposure to UV irradiation of 8.92 MJ-m -2 -nm -1 at 340 nm. Additionally, the bifacial cells when irradiated from the backside exhibited greater photocurrent loss compared to the front side exposure, indicating potential sensitivity of rear surface passivation to UV radiation.

crystalline silicon↗

Efficient Organic Solar Cell with 16.88% Efficiency Enabled by Refined Acceptor Crystallization and Morphology with Improved Charge Transfer and Transport Properties

Abstract Single‐layered organic solar cells (OSCs) using nonfullerene acceptors have reached 16% efficiency. Such a breakthrough has inspired new sparks for the development of the next generation of OSC materials. In addition to the optimization of electronic structure, it is important to investigate the essential solid‐state structure that guides the high efficiency of bulk heterojunction blends, which provides insight in understanding how to pair an efficient donor–acceptor mixture and refine film morphology. In this study, a thorough analysis is executed to reveal morphology details, and the results demonstrate that Y6 can form a unique 2D packing with a polymer‐like conjugated backbone oriented normal to the substrate, controlled by the processing solvent and thermal annealing conditions. Such morphology provides improved carrier transport and ultrafast hole and electron transfer, leading to improved device performance, and the best optimized device shows a power conversion efficiency of 16.88% (16.4% certified). This work reveals the importance of film morphology and the mechanism by which it affects device performance. A full set of analytical methods and processing conditions are executed to achieve high efficiency solar cells from materials design to device optimization, which will be useful in future OSC technology development.

Zhu, Lei↗

Improvement of Front-Junction GaInP by Point-Defect Injection and Annealing

Traditional front junction GaInP solar cells are radiation tolerant and can have good diffusion length, but have limited voltage and thus efficiency. Here, we investigate the impact of annealing on GaInP device performance. First, Zn-doped GaInP/AlGaInP double heterojunction structures are studied in order to investigate the impact of annealing in a simple structure. While standard anneals lower diffusion length and lifetime, annealing after injecting point-defects improves material quality, presumably by eliminating sources of non-radiative recombination. Atomic ordering is reduced by the anneal, which raises the device bandgap and requires consideration. These results can be used to improve front junction device performance while controlling the bandgap. Then, GaInP front-junction devices are created using anneals with and without point-defect injection. Voc and EQE trends follow the diffusion length and lifetime trends from the DH structures. Baseline devices have Woc of 0.484 V, raising to 0.504 V after a high temperature anneal. However, injecting point defects prior to the anneal results in a front junction device with Woc of 0.405 V and a diffusion length greater than 8 micrometers. Optimized front-junction GaInP devices with an ARC have ~20% efficiency without a rear reflector.

anneal↗

Improvement of Front-Junction GaInP by Point-Defect Injection and Annealing: Preprint

Traditional front junction GaInP solar cells are radiation tolerant and can have good diffusion length, but have limited voltage and thus efficiency. Here, we investigate the impact of annealing on GaInP device performance. First, Zn-doped GaInP/AlGaInP double heterojunction structures are studied in order to investigate the impact of annealing in a simple structure. While standard anneals lower diffusion length and lifetime, annealing after injecting point-defects improves material quality, presumably by eliminating sources of non-radiative recombination. Atomic ordering is reduced by the anneal, which raises the device bandgap and requires consideration. These results can be used to improve front junction device performance while controlling the bandgap. Then, GaInP front-junction devices are created using anneals with and without point-defect injection. Voc and EQE trends follow the diffusion length and lifetime trends from the DH structures. Baseline devices have Woc of 0.484 V, raising to 0.504 V after a high temperature anneal. However, injecting point defects prior to the anneal results in a front junction device with Woc of 0.405 V and a diffusion length greater than 8 micrometers. Optimized front-junction GaInP devices with an ARC have ~20% efficiency without a rear reflector.

anneal↗

Electrolyte Immersion Increases Photoconductivity in a Model Polymer Photocathode

Immersing polymer solar cells in aqueous electrolyte for photoelectrochemical (PEC) hydrogen production is likely to cause photophysical changes that could present both challenges and opportunities for engineering functional and durable devices. Herein we study the bulk heterojunction blend poly(4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b:4,5-b']dithiophene-2,6-diyl)-alt-(2-(((2-ethylhexyl)oxy)carbonyl)-3-fluorothieno[3,4-b]thiophene-4,6-diyl):poly(N,N'-di(2-octyldodecyl)naphthalene-1,8:4,5-bis(dicarboximide)-2,6-diyl)-alt-(2,2-bithiophene-5,5'-diyl) (PTB7-Th:N2200) excited-state dynamics in electrolyte from femtosecond to millisecond time scales using pump-probe microwave conductivity and absorption spectroscopy. While the blend swells very little, electrolyte exposure increases the microwave-frequency mobility and possibly the yield of photogenerated charges while also decreasing crystallinity. These results indicate an enhancement in key performance metrics, implying that any limitations on the performance of PEC test devices do not arise from active layer-electrolyte interactions. For the PTB7-Th:N2200 blend or similar photocathode systems, our results indicate that improving the interfacial kinetics and/or the carrier lifetime should be prioritized, not protecting the active layer from the electrolyte. Since this observation may not be universal to all polymer systems, future research should focus on identifying their limiting photophysical processes. electrolyte.

14 SOLAR ENERGY↗

Direct Metallization with Reactive Inks – Assessment of Reliability and Process Sensitivities

This project will reduce silver consumption in photovoltaic cells by a factor of almost ten – from 95 mg/cell (the median across technologies) to 10 mg/cell. To achieve this goal, we will replace screen-printed silver pastes with contact dispensed reactive inks that produce lower resistivity metallizations at lower temperatures and with thinner films. This project will generate the understanding necessary to scale this reactive ink technology from the bench-scale to commercial throughputs. Specifically, it will combine fundamental understanding on physics and chemistries involved in contact printing of reactive inks with detailed performance and reliability studies to quantify how tightly processing parameters need to be controlled in order to reliably metallize high efficiency solar cells at commercial throughputs of 36,000 cells/hour.

14 SOLAR ENERGY↗

High-efficiency double-heterostructure AlGaAs/GaAs solar cells

Double-heterostructure solar cells have been fabricated from wafers prepared by using organometallic chemical vapor deposition to grow a p GaAs absorbing layer sandwiched between p(+) and n(+) AlGaAs layers. The best cell, which incorporates an abrupt AlGaAs/GaAs shallow heterojunction, exhibits a global AM1 one-sun conversion efficiency of 23 percent. The rate at which the open-circuit voltage decreases with increasing temperature is lower for the double-heterostructure cells than for GaAs shallow-homojunction cells.

Gale, R. P.↗

Assessing UV-Induced Degradation in Bifacial Modules of Different Cell Technologies

Bifacial technology enables solar cells to offer higher power output and lower levelized cost of energy compared to their monofacial counterparts. Here, we examined the adverse effects of ultraviolet-induced degradation (UVID) on a variety of high-efficiency silicon wafer-based bifacial cell technologies, including silicon heterojunction (SHJ), interdigitated back contact (IBC), passivated emitter rear contact (PERC), and passivated emitter rear totally-diffused (PERT). Both the front and rear sides of bifacial cells without any encapsulation were exposed to an artificially accelerated UV exposure test. After 2000 h of UV irradiation, the bifacial cells exhibited greater power loss with backside exposure indicating potential sensitivity of the rear passivation to UV. The highest power degradation is observed in SHJ cells, followed by p-PERC and n-PERT cell technologies. The degradation in SHJ cells is attributed to the reduction in V oc and FF, while the degradation in p-PERC and n-PERT cells is correlated with a significant drop in I sc . This suggests that each cell type/make degrades via different degradation pathways.

bifacial cells↗

Targeted Adjusting Molecular Arrangement in Organic Solar Cells via a Universal Solid Additive

The incorporation of solid additive has been considered as an effective strategy for developing organic photovoltaics with multi-components, which is independent of dynamics, playing unique roles in morphology adjustment. However, their complex working mechanisms involving specific chemical structures are selective to material systems, hence limiting their university and flexibility in application. Herein, an inert small-molecular compound naphtho[1,2-c:5,6-c′]bis[1,2,5]thiadiazole (NT) is introduced into the bulk-heterojunction blend as the solid additive, which can function with various material systems and solvents, depending on its simple π-conjugated structure and S⋯N interaction for adjusting molecular alignment. It is interesting to note that the introduced NT can not only improve device performance, but also simplify complicated pre- or post-processing methods, reduce impact from batch-to-batch differences, construct sufficient energy transfer channel as well as improve device stability. The resulting devices based on PTzBI-dF:Y6-BO system show an impressive power conversion efficiency of 17.4% with obviously enhanced T 80 lifetime of >1200 h. These findings provide useful guidelines for exploring potential universal solid additives benefitting toward commercial application.

36 MATERIALS SCIENCE↗

Impact of acetic acid exposure on metal contact degradation of different crystalline silicon solar cell technologies

Degradation due to acetic acid in photovoltaic (PV) modules has been a commonly observed phenomenon for both damp-heat exposure and outdoor operations. Acetic acid is a degradation byproduct of ethylene-vinyl acetate (EVA), a common module encapsulant. To address this issue, robust metallization pastes and cell technologies are being developed. However, it is important to assess how these technologies perform in an acetic acid environment and withstand degradation before they are implemented in the solar market. In this work, we investigate the impact of acetic acid exposure on four different cell groups: monofacial passivated emitter and rear contact (PERC) cells with advanced telluride-based front contact pastes, bifacial PERC cells with novel aluminum rear contact pastes, bifacial tunnel oxide passivated contacts (TOPCon) cells, and silicon heterojunction (SHJ) cells. These cells were exposed to acetic acid for different time increments. The recombination losses were characterized by Suns-VOC, and multi-variate regression analysis of intensity-dependent photoluminescence (PL) images with Griddler AI. Resistive losses were tracked with the transmission line method (TLM). Samples showing severe performance degradation were selected for further materials characterization to understand the root cause. Top-down and cross-sectional scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and X-ray photoelectron spectroscopy (XPS) were performed to investigate the change in materials properties. Our study shows that the front contacts of the bifacial TOPCon cells and monofacial PERC cells were significantly affected by acetic acid exposure. Here, the SHJ cells were found to be the most stable.

14 SOLAR ENERGY↗

Surface passivation of InP solar cells with InAlAs layers

The efficiency of indium phosphide solar cells is limited by high values of surface recombination. The effect of a lattice-matched In(0.52)Al(0.48)As window layer material for InP solar cells, using the numerical code PC-1D is investigated. It was found that the use of InAlAs layer significantly enhances the p(+)n cell efficiency, while no appreciable improvement is seen for n(+)p cells. The conduction band energy discontinuity at the heterojunction helps in improving the surface recombination. An optimally designed InP cell efficiency improves from 15.4 percent to 23 percent AMO for a 10 nm thick InAlAs layer. The efficiency improvement reduces with increase in InAlAs layer thickness, due to light absorption in the window layer.

Jain, Raj K.↗

Conductive Adhesives for Metallization of Interdigitated Back Contact Solar Cells

The metallization and interconnection of Si solar cells to form a module is usually a multi-step process: cells are metallized individually, soldered into strings, and subsequently assembled into a module. Furthermore, the metallization process for individual cells must be compatible with the doped surfaces being contacted, which creates additional challenges when moving from diffused junctions to heterojunctions and/or passivated contact structures. To mitigate these problems and streamline module manufacturing for the case of interdigitated back contact (IBC) cell modules, we developed an approach wherein unmetallized IBC cells are bonded directly to a circuitized backsheet using a conductive adhesive (CA) that only conducts out-of-plane. The metal/CA/silicon stack is bonded by hot-pressing at 100-200 degrees C.For a CA consisting of ethylene vinyl acetate (EVA) filled with Ag-coated spheres or indium powder we find that contact resistivities in the range of 1-10 Wcm 2 are obtained, regardless of which conductive filler and which hot pressing parameters are used. XPS revealed that about 1-2 nm EVA residue bonds to the Si in these samples, suggesting the formation of an insulating barrier that is responsible for the high contact resistance. Using indium powder alone, improved contact resistivities <0.6 Wcm 2 , high shunt resistances, and an implied open-circuit voltage loss below 10 mV were obtained. Furthermore, a cost estimate is presented, indicating that substantial cost savings of up to $10/m 2 , or about $0.05/W DC , are possible through CA-based IBC module manufacturing.

14 SOLAR ENERGY↗

Ultra-thin, light-trapping silicon solar cells

Design concepts for ultra-thin (2 to 10 microns) high efficiency single-crystal silicon cells are discussed. Light trapping allows more light to be absorbed at a given thickness, or allows thinner cells of a given Jsc. Extremely thin cells require low surface recombination velocity at both surfaces, including the ohmic contacts. Reduction of surface recombination by growth of heterojunctions of ZnS and GaP on Si has been demonstrated. The effects of these improvements on AM0 efficiency is shown. The peak efficiency increases, and the optimum thickness decreases. Cells under 10 microns thickness can retain almost optimum power. The increase of absorptance due to light trapping is considered. This is not a problem if the light-trapping cells are sufficiently thin. Ultra-thin cells have high radiation tolerance. A 2 microns thick light-trapping cell remains over 18 percent efficient after the equivalent of 20 years in geosynchronous orbit. Including a 50 microns thick coverglass, the thin cells had specific power after irradiation over ten times higher than the baseline design.

Landis, Geoffrey A.↗

Seeing structural evolution of organic molecular nano-crystallites using 4D scanning confocal electron diffraction (4D-SCED)

Abstract Direct observation of organic molecular nanocrystals and their evolution using electron microscopy is extremely challenging, due to their radiation sensitivity and complex structure. Here, we introduce 4D-scanning confocal electron diffraction (4D-SCED), which enables direct in situ observation of bulk heterojunction (BHJ) thin films. 4D-SCED combines confocal electron optic setup with a pixelated detector to record focused spot-like diffraction patterns with high angular resolution, using an order of magnitude lower dose than previous methods. We apply it to study an active layer in organic solar cells, namely DRCN5T:PC 71 BM BHJ thin films. Structural details of DRCN5T nano-crystallites oriented both in- and out-of-plane are imaged at ~5 nm resolution and dose budget of ~5 e − /Å 2 . We use in situ annealing to observe the growth of the donor crystals, evolution of the crystal orientation, and progressive enrichment of PC 71 BM at interfaces. This highly dose-efficient method opens more possibilities for studying beam sensitive soft materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Dynamic disulfide bond networks enable self-healable and mechanically resilient intrinsically stretchable organic solar cells

A dynamic disulfide network introduced into donor/acceptor blends enables room-temperature self-healing and mechanical resilience in intrinsically stretchable organic solar cells, achieving performance recovery after high mechanical strain. The development of intrinsically stretchable organic solar cells (IS-OSCs) faces significant challenges in balancing mechanical durability and optoelectronic performance. Conventional π-conjugated polymer-based donor/acceptor blend films often exhibit limited stretchability and irreversible performance degradation under mechanical strain. To address these limitations, we propose a novel self-healable donor/acceptor blended film with a dual-network morphology, achieved by incorporating a dynamic disulfide bond-based crosslinked network into the bulk-heterojunction film. The resulting thin films demonstrate a power conversion efficiency (PCE) of 16.39% in rigid OSC devices and a fracture strain of 15.6%. Remarkably, the IS-OSCs retain 80% of their initial PCE under 30% strain and exhibit performance recovery after multiple stretch-release cycles at 40% strain through a room-temperature self-healing process. This work provides a proof-of-concept for highly stretchable and durable IS-OSCs, offering valuable insights for advancing the field of wearable energy systems, adaptive solar textiles, and sustainable electronics.

Yang, Wenyu↗

Baseplate Temperature–Dependent Vertical Composition Gradient in Pseudo–Bilayer Films for Printing Non–Fullerene Organic Solar Cells

Numerous previous reports on the sequential deposition (SD) technique have demonstrated that this approach can achieve a p–i–n active layer architecture with an ideal vertical composition gradient, which is one of the critical factors that can influence the physical processes that determine the photovoltaic performance of organic solar cells. Herein, a commonly used photovoltaic system comprised of PM6 as a donor and Y6 as an acceptor is investigated with respect to sequential blade–processing deposition to comprehensively explore the morphology characteristics as a function of baseplate temperature. A systematic study of the temperature–dependent blend morphology elucidates the SD–processed configuration merits and device physics behind temperature–controlled degree of vertical composition gradient, and constructs the temperature–microstructure–property relationship for the corresponding photovoltaic parameters. The result shows, as the temperature increases, the morphology of the active layer has undergone a distinct evolution from the pseudo–bulk heterojunction to a pseudo–planar heterojunction and then to a pseudo–planar bilayer, leading to a non–monotonic correlation between baseplate temperature and device performance. Further, this investigation not only reveals the importance of precisely controlling baseplate temperature for gaining vertical morphology control, but also provides a path toward rational optimization of device performance in the lab–to–fab transition.

14 SOLAR ENERGY↗