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Prebreakdown currents, conditioning rates and ultimate voltage capability of vacuum gaps and solid insulation, analyzing data on large-gap concentric cylinder configuration
An optimized leaf-spring apparatus for applying uniaxial stress to a Ge:Ga far-IR photoconductor has been designed and tested. This design has significant advantages for space applications which require high quantum efficiency and stable operation over long periods of time. The important features include adequate spring deflection with relatively small overall size, torque-free stress, easy measurement of applied stress, and a detector configuration with high responsivity. One-dimensional arrays of stressed photoconductors can be constructed using this design. A peak responsivity of 38 A/W is achieved in a detector with a cutoff wavelength of 200 microns, which was operated at a temperature of 2.0 K and a bias voltage equal to one-half of the breakdown voltage.
The evolving state of high voltage systems and their increasing use in the space program have called for a revision of the High Voltage Design Guidelines, Marshall Space Flight Center technical document MSFC-STD-531, originally issued September 1978 (previously 50 M05189b, October 1972). These guidelines deal in depth with issues relating to the specification of materials, particularly electrical insulation, as well as design practices and test methods. Emphasis is on corona and Paschen breakdown as well as plasma effects for Low Earth Orbiting systems. We will briefly review the history of these guidelines as well as their immediate predecessors and discuss their range of applicability. In addition, this document has served as the basis for several derived works that became focused, program-specific HV guidelines. We will briefly review two examples, guidelines prepared for the X-33 program and for the Space Shuttle Electric Auxiliary Power Unit (EAPU) upgrade.
Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were imaged. Away from local defects, step bunching was observed to yield step heights of hundreds of angstroms, with possible implications for the uniformity of dopants incorporated in SiC devices during fabrication. The quantitative topographic data from the AFM allow the relevant defect information to be extracted, such as the size and distribution of step bunching and the Burgers vector of screw dislocations. These atomic force microscopy results have furthered the understanding of the dynamic epitaxial SiC growth process. A model describing the observed hillock step bunching has been proposed. This cooperation between researchers involved in crystal growth, electronic device fabrication, and surface structural characterization is likely to continue as atomic force microscopy is used to improve SiC films for high-temperature electronic devices for NASA's advanced turbine engines and space power devices, as well as for future applications in the automotive industry.
Using polymer tantalum capacitors in Hi-Rel systems requires an assessment of the reliability characteristics of the parts. For this assessment, tantalum capacitors are typically subjected to reliability testing at temperatures and voltages exceeding their specified values, and the failure rate (FR) — or the probability of failure during use conditions — is calculated based on voltage and temperature acceleration factors. In this work, various types and lots of polymer tantalum capacitors have been tested at highly accelerated life test (HALT) conditions and the acceleration factors have been determined using different techniques. It has been shown that the behavior of capacitors under HALT conditions can be described based on the time-dependent dielectric breakdown (TDDB) model, which explains the presence of infant mortality (IM) and wear-out failures using the same failure mechanisms and allows for an assessment of the acceleration factors. The difference in acceleration factors obtained using exponential and power models is discussed. Analysis shows that with proper derating, screening, and qualification testing, the reliability of frameless Hi-Rel COTS polymer tantalum capacitors is adequate for space missions.
Using polymer tantalum capacitors in Hi-Rel systems requires an assessment of the reliability characteristics of the parts. For this assessment, tantalum capacitors are typically subjected to reliability testing at temperatures and voltages exceeding their specified values, and the failure rate (FR) — or the probability of failure during use conditions — is calculated based on voltage and temperature acceleration factors. In this work, various types and lots of polymer tantalum capacitors have been tested at highly accelerated life test (HALT) conditions and the acceleration factors have been determined using different techniques. It has been shown that the behavior of capacitors under HALT conditions can be described based on the time-dependent dielectric breakdown (TDDB) model, which explains the presence of infant mortality (IM) and wear-out failures using the same failure mechanisms and allows for an assessment of the acceleration factors. The difference in acceleration factors obtained using exponential and power models is discussed. Analysis shows that with proper derating, screening, and qualification testing, the reliability of frameless Hi-Rel COTS polymer tantalum capacitors is adequate for space missions.
This paper gives an overview of the space plasma test program for thin-film photovoltaics (TFPV) technologies developed at the Air Force Research Laboratory (AFRL). The main objective of this program is to simulate the effects of space plasma characteristic of LEO and MEO environments on TFPV. Two types of TFPV, amorphous silicon (a-Si) and copper-indium-gallium-diselenide (CIGS), coated with two types of thin-film, multifunctional coatings were used for these studies. This paper reports the results of the first phase of this program, namely the results of preliminary electrostatic charging, arcing, dielectric breakdown, and collection current measurements carried out with a series of TFPV exposed to simulated space plasma at the NASA Glenn Plasma Interaction Facility. The experimental data demonstrate that multifunctional coatings developed for this program provide effective protection against the plasma environment while minimizing impact on power generation performance. This effort is part of an ongoing program led by the Space Vehicles Directorate at the AFRL devoted to the development and space qualification of TFPV and their protective coatings.
Currently, the major reliability characteristic of tantalum capacitors is the failure rate, which is a constant used to characterize random failures of electronic components. However, contemporary MnO2 and polymer tantalum capacitors have both infant mortality (IM) and wear-out (WO) failures. This requires assessments of the useful life of the parts that is limited by the time of inception of WO failures that can be determined using an adequate reliability model and results of highly accelerated life testing (HALT). In this presentation, a modified time dependent dielectric breakdown (TDDB) model is used to describe both IM and WO failures during HALT. Specifics of physical processes resulting in degradation and failures in polymer and MnO2 tantalum capacitors are discussed, and the increase of IM failures with the level of stress is explained. The model justifies exponential dependence of the acceleration factors on voltage and predicts higher values of the voltage acceleration constant for IM compared to WO failures.
The effects of nuclear radiation on the reverse bias electrical characteristics of one hundred silicon power diodes were investigated. On a percentage basis, the changes in reverse currents were large but, due to very low initial values, this electrical characteristic was not the limiting factor in use of these diodes. These changes were interpreted in terms of decreasing minority carrier lifetimes as related to generation-recombination currents. The magnitudes of reverse voltage breakdown were unaffected by irradiation.
The authors review the Environment Power System Analysis Tool (EPSAT) design and demonstrate its capabilities by using it to address some questions that arose in designing the SPEAR III experiment. It is shown that that the rocket body cannot be driven to large positive voltages under the constraints of this experiment. Hence, attempts to measure the effects of a highly positive rocket body in the plasma environment should not be made in this experiment. It is determined that a hollow cathode will need to draw only about 50 mA to ground the rocket body. It is shown that a relatively small amount of gas needs to be released to induce a bulk breakdown near the rocket body, and this gas release should not discharge the sphere. Therefore, the experiment provides an excellent opportunity to study the neutralization of a differential charge.
A parametric study of annular spark gaps, pressures, and spark discharges in flowing oxygen gas was performed with a Champion spark exciter. The range of the pressure-distance product for the experiment is from approximately 50 torr-cm to 2500 torr-cm. Measurements of breakdown voltage qualitatively trend with Paschen's curve. Spark duration remained constant until the pressure-distance product exceeded 200 torr-cm, and then steadily increased. The mean spark energy increases linearly with the pressure-distance on a log-log plot indicating that a definite power relationship exists. The distribution of sparks at low energies and low pressures is not Gaussian and has no dominant peaks. Moderate and high spark energies are bimodal, with the dominant mode near 80 mJ. As pressure increases, dominant and secondary modes approach the same probability.
Electric and hybrid-electric aircraft require high-performance and reliable electric motors to meet aviation performance and safety requirements. One of the most common failure mechanisms in electric motors is winding insulation breakdown. In this paper, initial set of aging experiments are carried out on twisted pairs and motorette specimens. The twisted pairs are aged with multiple steady-temperature thermal aging cycles. The motorette specimens are thermally cycled by applying current to the windings. Partial discharge inception voltage is tracked and reported throughout the aging process. The end goal of this work is to develop methods and models for assessing the lifetime of motor winding insulation in electric and hybrid electric aircraft applications.
Studies of a d.c. superconducting magnet coil indicate that the large coil behaves as a straight waveguide structure. Voltages between layers within the coil sometimes exceeded those recorded at terminals where protective resistors are located. Protection of magnet coils against these excessive voltages could be accomplished by impedance matching throughout the coil system. The wave phenomenon associated with superconducting magnetic coils may create an instability capable of converting the energy of a quiescent d.c. superconducting coil into dissipative a.c. energy, even in cases when dielectric breakdown does not take place.
A Martian pressure static charge elimination tool is currently in development in the Electrostatics and Surface Physics Laboratory (ESPL) at NASA's Kennedy Space Center. In standard Earth atmosphere conditions, static charge can be neutralized from an insulating surface using air ionizers. These air ionizers generate ions through corona breakdown. The Martian atmosphere is 7 Torr of mostly carbon dioxide, which makes it inherently difficult to use similar methods as those used for standard atmosphere static elimination tools. An initial prototype has been developed to show feasibility of static charge elimination at low pressure, using corona discharge. A needle point and thin wire loop are used as the corona generating electrodes. A photo of the test apparatus is shown below. Positive and negative high voltage pulses are sent to the needle point. This creates positive and negative ions that can be used for static charge neutralization. In a preliminary test, a floating metal plate was charged to approximately 600 volts under Martian atmospheric conditions. The static elimination tool was enabled and the voltage on the metal plate dropped rapidly to -100 volts. This test data is displayed below. Optimization is necessary to improve the electrostatic balance of the static elimination tool.
The High Temperature Integrated Electronics and Sensor (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high-power, and/or high-radiation conditions will enable significant improvements to a far-ranging variety of applications and systems. These range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensor and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.
A number of upcoming missions require different thrust levels on the same spacecraft. A highly scaleable and efficient propulsion system would allow substantial mass savings. One type of thruster that can throttle from high to low thrust while maintaining a high specific impulse is a Micro-Electro-Mechanical System (MEMS) colloidal thruster. The NASA GSFC MEMS colloidal thruster has solved the problem of electrical breakdown to permit the integration of the electrode on top of the emitter by a novel MEMS fabrication technique. Devices have been successfully fabricated and the insulation properties have been tested to show they can support the required electric field. A computational finite element model was created and used to verify the voltage required to successfully operate the thruster. An experimental setup has been prepared to test the devices with both optical and Time-Of-Flight diagnostics.
Scintillations in solid tantalum capacitors are momentarily local breakdowns terminated by a self-healing or conversion to a high-resistive state of the manganese oxide cathode. This conversion effectively caps the defective area of the tantalum pentoxide dielectric and prevents short-circuit failures. Typically, this type of breakdown has no immediate catastrophic consequences and is often considered as nuisance rather than a failure. Scintillation breakdowns likely do not affect failures of parts under surge current conditions, and so-called "proofing" of tantalum chip capacitors, which is a controllable exposure of the part after soldering to voltages slightly higher than the operating voltage to verify that possible scintillations are self-healed, has been shown to improve the quality of the parts. However, no in-depth studies of the effect of scintillations on reliability of tantalum capacitors have been performed so far. KEMET is using scintillation breakdown testing as a tool for assessing process improvements and to compare quality of different manufacturing lots. Nevertheless, the relationship between failures and scintillation breakdowns is not clear, and this test is not considered as suitable for lot acceptance testing. In this work, scintillation breakdowns in different military-graded and commercial tantalum capacitors were characterized and related to the rated voltages and to life test failures. A model for assessment of times to failure, based on distributions of breakdown voltages, and accelerating factors of life testing are discussed.
This book is written for newcomers to the topic of high voltage (HV) in space and is intended to replace an earlier (1970s) out-of-print document. It discusses the designs, problems, and their solutions for HV, mostly direct current, electric power, or bias supplies that are needed for space scientific instruments and devices, including stepping supplies. Output voltages up to 30kV are considered, but only very low output currents, on the order of microamperes. The book gives a brief review of the basic physics of electrical insulation and breakdown problems, especially in gases. It recites details about embedment and coating of the supplies with polymeric resins. Suggestions on HV circuit parts follow. Corona or partial discharge testing on the HV parts and assemblies is discussed both under AC and DC impressed test voltages. Electric field analysis by computer on an HV device is included in considerable detail. Finally, there are many examples given of HV power supplies, complete with some of the circuit diagrams and color photographs of the layouts.