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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS2007

Preliminary Low Temperature Electron Irradiation of Triple Junction Solar Cells

For many years extending solar power missions far from the sun has been a challenge not only due to the rapid falloff in solar intensity (intensity varies as inverse square of solar distance) but also because some of the solar cells in an array may exhibit a LILT (low intensity low temperature) degradation that reduces array performance. Recent LILT tests performed on commercial triple junction solar cells have shown that high performance can be obtained at solar distances as great as approx. 5 AU1. As a result, their use for missions going far from the sun has become very attractive. One additional question that remains is whether the radiation damage experienced by solar cells under low temperature conditions will be more severe than when measured during room temperature radiation tests where thermal annealing may take place. This is especially pertinent to missions such as the New Frontiers mission Juno, which will experience cell irradiation from the trapped electron environment at Jupiter. Recent testing2 has shown that low temperature proton irradiation (10 MeV) produces cell degradation results similar to room temperature irradiations and that thermal annealing does not play a factor. Although it is suggestive to propose the same would be observed for low temperature electron irradiations, this has not been verified. JPL has routinely performed radiation testing on commercial solar cells and has also performed LILT testing to characterize cell performance under far sun operating conditions. This research activity was intended to combine the features of both capabilities to investigate the possibility of any room temperature annealing that might influence the measured radiation damage. Although it was not possible to maintain the test cells at a constant low temperature between irradiation and electrical measurements, it was possible to obtain measurements with the cell temperature kept well below room temperature. A fluence of 1E15 1MeV electrons was selected as representative of a moderately high dose that might be expected for a solar powered mission. Fluences much greater than this would require large increases in array area and mass, compromising the ability of PV to compete with non-solar alternatives.

Stella, Paul M.↗
NASA NTRS1985

High-temperature thermocouple and heat flux gauge using a unique thin film-hardware hot junction

A special thin film-hardware material thermocouple (TC) and heat flux gauge concept for a reasonably high temperature and high flux flat plate heat transfer experiment was fabricated and tested to gauge temperatures of 911 K. This concept was developed for minimal disturbance of boundary layer temperature and flow over the plates and minimal disturbance of heat flux through the plates. Comparison of special heat flux gauge Stanton number output at steady-state conditions with benchmark literature data was good and agreement was within a calculated uncertainty of the measurement system. Also, good agreement of special TC and standard TC outputs was obtained and the results are encouraging. Oxidation of thin film thermoelements was a primary failure mode after about 5 of operation.

Liebert, C. H.↗
NASA NTRS2000

Power Systems Evaluated for Solar Electric Propulsion Vehicles

Solar electric propulsion (SEP) mission architectures are applicable to a wide range NASA missions including the robotic exploration of the outer planets in the next decade and the human exploration of Mars within the next 2 decades. SEP enables architectures that are very mass efficient with reasonable power levels (1-MW class) aerobrake and cryogenic upper-stage transportation technologies are utilized. In this architecture, the efficient SEP stage transfers the payload from low Earth orbit (LEO) High Energy Elliptical Parking Orbit (HEEPO) within a period of 6 to 12 months. highthrust, cryogenic upper stage and payload then separate from the SEP vehicle for injection to the planetary target, allowing for fast heliocentric trip times. This mission architecture offers a potential reduction in mass to LEO in comparison to alternative all-chemical nuclear propulsion schemes. Mass reductions may allow launch vehicle downsizing enable missions that would have been grounded because of cost constraints. The preceding figure illustrates a conceptual SEP stage design for a human Mars mission. Researchers at the NASA Glenn Research Center at Lewis Field designed conceptual SEP vehicle, conceived the mission architecture to use this vehicle, and analyzed the vehicle s performance. This SEP stage has a dry mass of 35 metric tons (MT), 40 MT of xenon propellant, and a photovoltaic array that spans 110 m, providing power to a cluster of eight 100-kW Hall thrusters. The stage can transfer an 80-MT payload and upper stage to the desired HEEPO. Preliminary packaging studies show this space-station-class SEP vehicle meets the proposed "Magnum" launch vehicle and volume requirements with considerable margin. An SEP vehicle for outer planetary missions, such as the Europa Mapper Mission, would be dramatically smaller than human Mars mission SEP stage. In this mission architecture, the SEP power system with the payload to provide spacecraft power throughout the mission. Several photovoltaic array design concepts were considered for the SEP vehicle power system for the human mission to Mars. These include a space station derivative, a SCARLET (Solar Concentrator Arrays with Refractive Linear Element Technology) derivative, and a hybrid inflatable-deployable thin polymer membrane array with thin-film solar cells (as shown in the concept illustration). This concept is based on a design developed for the Next Generation Space Telescope Sun shield. The array is divided into 16 independent electrical sections with 500-V, negative-grounded solar cell strings. The power system employs a channelized, 500-Vdc power management and distribution (PMAD) architecture with lithium ion batteries for energy storage for vehicle and payload secondary loads (the high-power Hall thrusters do not operate in eclipse periods). The 500-V PMAD voltage permits "direct-drive" thruster operation, greatly reducing the power processing unit size, complexity, and power loss. Similar power system architecture, designs, and technology are assumed for the Europa Mapper Mission SEP vehicle. The primary exceptions are that the photovoltaic array is assumed to consist of two rectangular wings and that the power system rating is 15 kW in Earth orbit and 200 W at Europa. To size the SEP vehicle power system, a dedicated Fortran code was developed to predict detailed power system performance, mass, and thermal control requirements. This code also modeled all the relevant Earth orbit environments; that is, the particulate radiation, plasma, meteoroids and debris, ultraviolet radiation, contamination, and thermal conditions. Analysis results for the Human Mars Mission SEP vehicle show a power system mass of 9-MT and photovoltaic array area of 5800-square meters for the thin-membrane design concept with CuInS2 thin-film cells. Power processing unit input power for a thin-membrane array design with three-junction, amorphous SiGe solar cells is shown in the graph. Power falls off rapidly inhe first weeks of the mission because of light-induced (Staebler-Wronksi) solar cell losses. During the next 200 days, power decreases steadily as the SEP stage spirals through the proton belts and sustains the bulk of the mission radiation damage. Once the vehicle apogee is above approximately four Earth radii, little additional degradation is incurred. From 400 to 800 days, a 1100-km "parking" orbit is maintained to await the next payload transfer opportunity. This orbit is below the main proton belt, and thus, little radiation dose is accumulated during this time period. During the second LEO-to-HEEPO transfer, power degrades somewhat further, but power requirements are still met. In comparison, the Europa Mapper SEP vehicle power system had a mass of 150 kg and a thin membrane array area of 100 square meters.

Kerslake, Thomas W.↗
NASA NTRS2006

Junction-to-Case Thermal Resistance of a Silicon Carbide Bipolar Junction Transistor Measured

Junction temperature of a prototype SiC-based bipolar junction transistor (BJT) was estimated by using the base-emitter voltage (V(sub BE)) characteristic for thermometry. The V(sub BE) was measured as a function of the base current (I(sub B)) at selected temperatures (T), all at a fixed collector current (I(sub C)) and under very low duty cycle pulse conditions. Under such conditions, the average temperature of the chip was taken to be the same as that of the temperature-controlled case. At increased duty cycle such as to substantially heat the chip, but same I(sub C) pulse height, the chip temperature was identified by matching the V(sub BE) to the thermometry curves. From the measured average power, the chip-to-case thermal resistance could be estimated, giving a reasonable value. A tentative explanation for an observed bunching with increasing temperature of the calibration curves may relate to an increasing dopant atom ionization. A first-cut analysis, however, does not support this.

Niedra, Janis M.↗
NASA NTRS2009

Assessment of SOI AND Gate, Type CHT-7408, for Operation in Extreme Temperature Environments

Electronic parts based on silicon-on-insulator (SOI) technology are finding widespread applications due to their ability to operate in harsh environments and the benefits they offer as compared to their silicon counterparts. Due to their construction, they are tailored for high temperature operation and show good tolerance to radiation events. In addition, their inherent design lessens the formation of parasitic junctions, thereby reducing leakage currents, decreasing power consumption, and enhancing speed. These devices are typically rated in temperature capability from -55 C to about +225 C, and their characteristics over this temperature range are documented in data sheets. Since electronics in some of NASA space exploration missions are required to operate under extreme temperature conditions, both cold and hot, their characteristic behavior within the full temperature spectrum must be determined to establish suitability for use in space applications. The effects of extreme temperature exposure on the performance of a new commercial-off-the-shelf (COTS) SOI AND gate device were evaluated in this work. The high temperature, quad 2-inputs AND gate device, which was recently introduced by CISSOID, is fabricated using a CMOS SOI process. Some of the specifications of the CHT-7408 chip are listed in a table. By supplying a constant DC voltage to one gate input and a 10 kHz square wave into the other associated gate input, the chip was evaluated in terms of output response, output rise (t(sub r)) and fall times (tf), and propagation delays (using a 50% level between input and output during low to high (tPLH) and high to low (tPHL) transitions). The supply current of the gate circuit was also obtained. These parameters were recorded at various test temperatures between -195 C and +250 C using a Sun Systems environmental chamber programmed at a temperature rate of change of 10 C/min. In addition, the effects of thermal cycling on this chip were determined by exposing it to a total of 12 cycles between -195 C and +250 C. Following the cycling activity, measurements were performed again at the test temperatures of -195 C, +21 C, and +250 C.

Patterson, Richard↗
NASA NTRS2005

Making AlN(x) Tunnel Barriers Using a Low-Energy Nitrogen-Ion Beam

A technique based on accelerating positive nitrogen ions onto an aluminum layer has been demonstrated to be effective in forming thin (<2 nm thick) layers of aluminum nitride (AlN(x)) for use as tunnel barriers in Nb/Al-AlN(x)/Nb superconductor/insulator/ superconductor (SIS) Josephson junctions. AlN(x) is the present material of choice for tunnel barriers because, to a degree greater than that of any other suitable material, it offers the required combination of low leakage current at high current density and greater thermal stability. While ultra-thin AlN films with good thickness and stoichiometry control are easily formed using techniques such as reactive molecular beam epitaxy and chemical vapor deposition, growth temperatures of 900 C are necessary for the dissociative adsorption of nitrogen from either nitrogen (N2) or ammonia (NH3). These growth temperatures are prohibitively high for the formation of tunnel barriers on Nb films because interfacial reactions at temperatures as low as 200 to 300 C degrade device properties. Heretofore, deposition by reactive sputtering and nitridation of thin Al layers with DC and RF nitrogen plasmas have been successfully used to form AlN barriers in SIS junctions. However, precise control over critical current density Jc has proven to be a challenge, as is attaining adequate process reproducibility from system to system. The present ion-beam technique is an alternative to the plasma or reactive sputtering techniques as it provides a highly controlled arrival of reactive species, independent of the electrical conditions of the substrate or vacuum chamber. Independent and accurate control of parameters such as ion energy, flux, species, and direction promises more precise control of film characteristics such as stoichiometry and thickness than is the case with typical plasma processes. In particular, the background pressure during ion-beam nitride growth is 2 or 3 orders of magnitude lower, minimizing the formation of compounds with contaminants, which is critical in devices the performance of which is dictated by interfacial characteristics. In addition, the flux of incoming species can be measured in situ using ion probes so that the dose can be controlled accurately. The apparatus used in the present ion-beam technique includes a vacuum chamber containing a commercial collimated- ion-beam source, a supply of nitrogen and argon, and an ion probe for measuring the ion dose. Either argon or nitrogen can be used as the feed gases for the ion source, depending on whether cleaning of the substrate or growth of the nitride, respectively, is desired. Once the Nb base electrode and Al proximity layer have been deposited, the N2 gas line to the ion beam is vented and purged, and the ion-source is turned on until a stable discharge is obtained. The substrate is moved over the ion-beam source to expose the Al surface layer to the ion beam (see figure) for a specified duration for the formation of the nitride tunnel barrier. Next, the Nb counter-electrode layer is deposited on the nitride surface layer. The Nb/Al- AlN(x)/Nb-trilayer-covered substrate is then patterned into individual devices by use of conventional integrated-circuit processing techniques.

Kaul, Anupama↗
NASA NTRS2015

Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated With Two Levels of Metal Interconnect

The fabrication and prolonged 500 C electrical testing of 4H-SiC junction field effect transistor (JFET) integrated circuits (ICs) with two levels of metal interconnect is reported in another submission to this conference proceedings. While some circuits functioned more than 3000 hours at 500 C, the majority of packaged ICs from this wafer electrically failed after less than 200 hours of operation in the same test conditions. This work examines the root physical degradation and failure mechanisms believed responsible for observed large discrepancies in 500 C operating time. Evidence is presented for four distinct issues that significantly impacted 500 C IC operational yield and lifetime for this wafer.

JFET↗
NASA NTRS2015

Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect

The fabrication and prolonged 500 C electrical testing of 4H-SiC junction field effect transistor (JFET) integrated circuits (ICs) with two levels of metal interconnect is reported in another submission to this conference proceedings. While some circuits functioned more than 1000 hours at 500 C, the majority of packaged ICs from this wafer electrically failed after less than 200 hours of operation in the same test conditions. This work examines the root physical degradation and failure mechanisms believed responsible for observed large discrepancies in 500 C operating time. Evidence is presented for four distinct issues that significantly impacted 500 C IC operational yield and lifetime for this wafer.

Microelectronics↗
NASA NTRS1972

JPL lithium doped solar cell development program

One of the most significant problems encountered in the use of silicon solar cells in space is the sensitivity of the device to electron and proton radiation exposure. The p-diffused-into-n-base solar cells were replaced with the more radiation tolerant n-diffused-into-p-base solar cells. Another advancement in achieving greater radiation tolerance was the discovery that the addition of lithium to n-base silicon resulted in what appeared to be annealing of radiation-induced defects. This phenomenon is being exploited to develop a high efficiency radiation resistant lithium-doped solar cell. Lithium-doped solar cells fabricated from oxygen-lean and oxygen-rich silicon were obtained with average initial efficiencies of 11.9% at air mass zero and 28 C, as compared to state-of-the-art n-p cells fabricated from 10 ohm cm silicon with average efficiencies of 11.3% under similar conditions. Lithium-doped cells demonstrated the ability to withstand three to five times the fluence of 1-MeV electrons before degrading to a power equivalent to state-of-the-art solar cells. The principal investigations are discussed with respect to fabrication of high efficiency radiation resistant lithium-doped cells, including starting material, p-n junction diffusion, lithium source introduction, and lithium diffusion.

Berman, P. A.↗
NASA NTRS1991

Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

The effects of neutron and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10(exp 13) n/sq cm and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are presented. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

Schwarze, G. E.↗
NASA NTRS1990

Analytical solutions with Generalized Impedance Boundary Conditions (GIBC)

The diffraction by a material discontinuity in a thick dielectric/ferrite layer is considered by modeling the layer as a distributed current sheet obeying generalized sheet transition conditions (GSTC's). The sheet currents are then formulated and solved via the standard dual integral equation approach. This yields the diffracted field in terms of unknown constants which underscore the non-uniqueness of the GSTC current sheet representation. The constants are dependent on the geometry and properties of the discontinuity and are determined by enforcing field continuity across the material junction. This requires the field internal to the slab which are determined from the external ones via analytic continuity. Results are given which validate the solution and demonstrate the importance of the constants.

Ricoy, Mark A.↗
NASA NTRS1981

Solar cell measurements

The measurement of the electrical performance characteristics of individual solar cells is discussed. One of the reasons is determination of the output power, measurement of the effect of various degradation mechanisms, and separation of cells by current and voltage for eventual use in series and parallel combinations. Major problem areas in making accurate performance measurements are the determination of the irradiance level during measurement, the measurement and control of cell junction temperature, and the contacting of the separate current and potential leads to the cell under test. Solar cells respond to only part of the solar spectrum, irradiance measurement made with blackbody detectors lead to spectral mismatch errors. The use of reference cells with a spectral response similar to that of the test cell reduces this error. Reference cells are calibrated at standard atmospheric conditions with all cells calibrated at the same conditions.

Curtis, H. B.↗
NASA NTRS1999

Analyses of Transistor Punchthrough Failures

The failure of two transistors in the Altitude Switch Assembly for the Solid Rocket Booster followed by two additional failures a year later presented a challenge to failure analysts. These devices had successfully worked for many years on numerous missions. There was no history of failures with this type of device. Extensive checks of the test procedures gave no indication for a source of the cause. The devices were manufactured more than twenty years ago and failure information on this lot date code was not readily available. External visual exam, radiography, PEID, and leak testing were performed with nominal results Electrical testing indicated nearly identical base-emitter and base-collector characteristics (both forward and reverse) with a low resistance short emitter to collector. These characteristics are indicative of a classic failure mechanism called punchthrough. In failure analysis punchthrough refers to an condition where a relatively low voltage pulse causes the device to conduct very hard producing localized areas of thermal runaway or "hot spots". At one or more of these hot spots, the excessive currents melt the silicon. Heavily doped emitter material diffuses through the base region to the collector forming a diffusion pipe shorting the emitter to base to collector. Upon cooling, an alloy junction forms between the pipe and the base region. Generally, the hot spot (punch-through site) is under the bond and no surface artifact is visible. The devices were delidded and the internal structures were examined microscopically. The gold emitter lead was melted on one device, but others had anomalies in the metallization around the in-tact emitter bonds. The SEM examination confirmed some anomalies to be cosmetic defects while other anomalies were artifacts of the punchthrough site. Subsequent to these analyses, the contractor determined that some irregular testing procedures occurred at the time of the failures heretofore unreported. These testing irregularities involved the use of a breakout box and were the likely cause of the failures. There was no evidence to suggest a generic failure mechanism was responsible for the failure of these transistors.

Nicolas, David P.↗
NASA NTRS2011

On Transients in Detached Bridgman Growth

In detached Bridgman growth, a gap exists between the growing crystal and the crucible wall. According to crystal shape stability theory, only specific gap widths will be dynamically stable. Beginning with a crystal diameter that differs from stable conditions, the transient crystal growth process is analyzed. The transient shapes are calculated assuming that the growth angle is constant. Anisotropy and dynamic contact angle effects are considered. In microgravity, dynamic stability depends only on capillary effects and is decoupled from heat transfer. However, heat transfer will influence the crystal-melt interface shape. The local angles and the crystal-melt-vapor triple junction are analyzed and the applicability of the Herring formula is discussed. A potential microgravity experiment is proposed which would enhance our understanding of the detached growth dynamic stability problem.

Mazuruk, K.↗
NASA NTRS1973

Cardiac arrhythmias during exercise testing in healthy men.

Clinically healthy male executives who participate in a long-term physical conditioning program have demonstrated cardiac arrhythmia during and after periodic ergometric testing at submaximal and maximal levels. In 1,385 tests on 248 subjects, it was found that 34% of subjects demonstrated an arrhythmia at some time and 13% of subjects developed arrhythmia on more than one test. Premature systoles of ventricular origin were most common, but premature systoles of atrial origin, premature systoles of junctional origin, paroxysmal atrial tachycardia, atrioventricular block, wandering pacemaker, and pre-excitation were also seen. Careful post-test monitoring and pulse rate regulated training sessions are suggested for such programs.

Beard, E. F.↗
NASA NTRS1979

Method for analyzing radiation sensitivity of integrated circuits

A method for analyzing the radiation sensitivity of an integrated circuit is described to determine the components. The application of a narrow radiation beam to portions of the circuit is considered. The circuit is operated under normal bias conditions during the application of radiation in a dosage that is likely to cause malfunction of at least some transistors, while the circuit is monitored for failure of the irradiated transistor. When a radiation sensitive transistor is found, then the radiation beam is further narrowed and, using a fresh integrated circuit, a very narrow beam is applied to different parts of the transistor, such as its junctions, to locate the points of greatest sensitivity.

Gauthier, M. K.↗
NASA NTRS2012

Optical Frequency Optimization of a High Intensity Laser Power Beaming System Utilizing VMJ Photovoltaic Cells

An effective form of wireless power transmission (WPT) has been developed to enable extended mission durations, increased coverage and added capabilities for both space and terrestrial applications that may benefit from optically delivered electrical energy. The high intensity laser power beaming (HILPB) system enables long range optical 'refueling" of electric platforms such as micro unmanned aerial vehicles (MUAV), airships, robotic exploration missions and spacecraft platforms. To further advance the HILPB technology, the focus of this investigation is to determine the optimal laser wavelength to be used with the HILPB receiver, which utilizes vertical multi-junction (VMJ) photovoltaic cells. Frequency optimization of the laser system is necessary in order to maximize the conversion efficiency at continuous high intensities, and thus increase the delivered power density of the HILPB system. Initial spectral characterizations of the device performed at the NASA Glenn Research Center (GRC) indicate the approximate range of peak optical-to-electrical conversion efficiencies, but these data sets represent transient conditions under lower levels of illumination. Extending these results to high levels of steady state illumination, with attention given to the compatibility of available commercial off-the-shelf semiconductor laser sources and atmospheric transmission constraints is the primary focus of this paper. Experimental hardware results utilizing high power continuous wave (CW) semiconductor lasers at four different operational frequencies near the indicated band gap of the photovoltaic VMJ cells are presented and discussed. In addition, the highest receiver power density achieved to date is demonstrated using a single photovoltaic VMJ cell, which provided an exceptionally high electrical output of 13.6 W/sq cm at an optical-to-electrical conversion efficiency of 24 percent. These results are very promising and scalable, as a potential 1.0 sq m HILPB receiver of similar construction would be able to generate 136 kW of electrical power under similar conditions.

Raible, Daniel E.↗
NASA NTRS1992

Comparison of measured and predicted performance of a SIS waveguide mixer at 345 GHz

The measured gain and noise of a SIS waveguide mixer at 345 GHz have been compared with theoretical values, calculated from the quantum mixer theory using a three port model. As a mixing element, we use a series array of two Nb-Al2O3-Nb SIS junctions. The area of each junction is 0.8 sq microns and the normal state resistance is 52 omega. The embedding impedance of the mixer has been determined from the pumped DC-IV curves of the junction and is compared to results from scale model measurements (105 x). Good agreement was obtained. The measured mixer gain, however, is a factor of 0.45 plus or minus 0.5 lower than the theoretical predicted gain. The measured mixer noise temperature is a factor of 4-5 higher than the calculated one. These discrepancies are independent on pump power and are valid for a broad range of tuning conditions.

Honingh, C. E.↗