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We present single event effects (SEE) evaluation of the Everspin Technologies 1Gb non-volatile ST-DDR4 spin-transfer torque MRAM.
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A method and apparatus for sensing a desired component of a magnetic field using an isotropic magnetoresistive material. This is preferably accomplished by providing a bias field that is parallel to the desired component of the applied magnetic field. The bias field is applied in a first direction relative to a first set of magnetoresistive sensor elements, and in an opposite direction relative to a second set of magnetoresistive sensor elements. In this configuration, the desired component of the incident magnetic field adds to the bias field incident on the first set of magnetoresistive sensor elements, and subtracts from the bias field incident on the second set of magnetoresistive sensor elements. The magnetic field sensor may then sense the desired component of the incident magnetic field by simply sensing the difference in resistance of the first set of magnetoresistive sensor elements and the second set of magnetoresistive sensor elements.
Ferromagnetic Weyl semimetal Co 3 Sn 2 S 2 has recently attracted a lot of interest on account of its large non-saturating magnetoresistance and the high carrier mobility common to topological semimetals. Moreover, the material also provides a platform for studying the interplay between the intrinsic magnetism and topological band structures, which generates a significant anomalous Hall effect. Chemical doping is the usual approach to adjust materials’ properties, and it can lead to fascinating results. Here, we present the influence of Fe-doping on the magnetic and transport properties of polycrystalline Co 3 Sn 2 S 2 . The Fe-doping suppresses the sample’s magnetic order, increases the electrical resistivity, results in a skew-scattering contribution to the anomalous Hall effect and Fe impurities cause the Kondo effect. In addition, we report on the impact of Fe-doping on the magnetoresistance of Co 3 Sn 2 S 2 , where Fe-doping leads to a dramatic decline in magnetoresistance. Furthermore, the hysteresis behavior in the low magnetic field region, detected previously in nanoflake samples only, is observed in both pure and Fe-doped Co 3 Sn 2 S 2 bulk samples. Finally, our findings serve as a reference and source of inspiration for future chemical doping research on topological semimetals.
Two-dimensional (2D) materials have gained increasing prominence not only in fundamental research but also in daily applications. However, to fully harness their potential, it is crucial to optimize their properties with an external parameter and track the electronic structure simultaneously. Magnetotransport over a wide magnetic field range is a powerful method to probe the electronic structure and, for metallic 2D materials, quantum oscillations superimposed on the transport signals encode Fermi surface parameters. In this manuscript, we utilize biaxial strain as an external tuning parameter and investigate the effects of strain on the electronic properties of two quasi-2D superconductors, MoTe 2 and RbV 3 Sb 5 , by measuring their magnetoresistance in pulsed magnetic fields up to 60 T. With a careful selection of insulating substrates, we demonstrate the possibility of both the compressive and tensile biaxial strains imposed on MoTe 2 and RbV 3 Sb 5 , respectively. For both systems, the applied strain has led to superconducting critical temperature enhancement compared to their free-standing counterparts, proving the effectiveness of this biaxial strain method at cryogenic temperatures. Clear quantum oscillations in the magnetoresistance—the Shubnikov–de Haas (SdH) effect—are obtained in both samples. In strained MoTe 2 , the magnetoresistance exhibits a nearly quadratic dependence on the magnetic field and remains non-saturating even at the highest field, whereas in strained RbV 3 Sb 5 , two SdH frequencies showed a substantial enhancement in effective mass values, hinting at a possible enhancement of charge fluctuations. Our results demonstrate that combining biaxial strain and pulsed magnetic field paves the way for studying 2D materials under unprecedented conditions.
Magnetic frustration in metallic rare- earth lanthanides (Ln) with 4f electrons is crucial for producing interesting magnetic phases with high magnetic anisotropy where intertwined charge and spin degrees of freedom lead to novel phenomena. Here we report on the magnetic, thermodynamic, and electrical transport properties of TbAuAl 4 Ge 2 . Tb ions form two-dimensional triangular lattice layers which stack along the crystalline c axis. The magnetic phase diagram reveals multiple nearly degenerate ordered states upon applying field along the magnetically easy ab-plane before saturation. The magnetoresistance in this configuration exhibits intricate field dependence that closely follows that of the magnetization while the specific heat reveals a region of highly enhanced entropy, suggesting the possibility of a nontrivial spin textured phase. For fields applied along the c axis (hard axis), we find linear magnetoresistance over a wide range of fields. Further, we compare the magnetic properties and magnetoresistance with an isostructural GdAuAl 4 Ge 2 single crystal. These results identify TbAuAl 4 Ge 2 as an environment for complex quantum spin states and pave the way for further investigations of the broader LnAuAl 4 Ge 2 family of materials.
Here, we examine the effects of Pt vacancies on the magnetotransport properties of Weyl semimetal candidate GdPtSb films, grown by molecular beam epitaxy on c-plane sapphire. Rutherford backscattering spectrometry and x-ray diffraction measurements suggest that phase-pure GdPt x Sb films can accommodate up to 15% of Pt vacancies (x = 0.85), which act as acceptors, as measured by the Hall effect. Two classes of electrical transport behavior are observed. Pt-deficient films display metallic temperature-dependent resistivity (dρ/dT > 0). The longitudinal magnetoresistance (LMR, magnetic field B parallel to electric field E) is more negative than transverse magnetoresistance (TMR, B⊥E), consistent with the expected chiral anomaly for a Weyl semimetal. The combination of Pt-vacancy disorder and doping away from the expected Weyl nodes, however, suggests that conductivity fluctuations may explain the negative LMR rather than chiral anomaly. Samples closer to stoichiometry display the opposite behavior: semiconductorlike resistivity (dρ/dT > 0) and more negative TMR than LMR. Hysteresis and other nonlinearities in the low-field Hall effect and magnetoresistance suggest that spin-disorder scattering and possible topological Hall effect may dominate the near-stoichiometric samples. Our findings highlight the complications of transport-based identification of Weyl nodes but point to possible topological spin textures in GdPtSb.
Here, we evaluate the resilience of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy to displacement damage induced by heavy ion irradiation. MTJs were exposed to 3 MeV Ta 2+ ions at different levels of ion beam fluence spanning five orders of magnitude. The devices remained insensitive to beam fluences up to 10 11 ions/cm 2 , beyond which a gradual degradation in the device magnetoresistance, coercive magnetic field, and spin-transfer-torque switching voltage were observed, ending with a complete loss of magnetoresistance at very high levels of displacement damage (>0.035 displacements per atom). The loss of magnetoresistance is attributed to structural damage at the MgO interfaces, which allows electrons to scatter among the propagating modes within the tunnel barrier and reduces the net spin polarization. Ion-induced damage to the interface also reduces the perpendicular magnetic anisotropy. This study clarifies the displacement damage thresholds that lead to significant irreversible changes in the characteristics of spin-transfer-torque magnetic random access memory (STT-MRAM) and elucidates the physical mechanisms underlying the deterioration in device properties.
Two-dimensional (2D) materials have gained increasing prominence not only in fundamental research but also in daily applications. However, to fully harness their potential, it is crucial to optimize their properties with an external parameter and track the electronic structure simultaneously. Magnetotransport over a wide magnetic field range is a powerful method to probe the electronic structure and, for metallic 2D materials, quantum oscillations superimposed on the transport signals encode Fermi surface parameters. In this manuscript, we utilize biaxial strain as an external tuning parameter and investigate the effects of strain on the electronic properties of two quasi-2D superconductors, MoTe 2 and RbV 3 Sb 5 , by measuring their magnetoresistance in pulsed magnetic fields up to 60 T. With a careful selection of insulating substrates, we demonstrate the possibility of both the compressive and tensile biaxial strains imposed on MoTe 2 and RbV 3 Sb 5 , respectively. For both systems, the applied strain has led to superconducting critical temperature enhancement compared to their free-standing counterparts, proving the effectiveness of this biaxial strain method at cryogenic temperatures. Clear quantum oscillations in the magnetoresistance—the Shubnikov–de Haas (SdH) effect—are obtained in both samples. In strained MoTe 2 , the magnetoresistance exhibits a nearly quadratic dependence on the magnetic field and remains non-saturating even at the highest field, whereas in strained RbV 3 Sb 5 , two SdH frequencies showed a substantial enhancement in effective mass values, hinting at a possible enhancement of charge fluctuations. Our results demonstrate that combining biaxial strain and pulsed magnetic field paves the way for studying 2D materials under unprecedented conditions.
Understanding the influence of phase coexistence and phase transitions on spin transport properties in a ferromagnet/heavy metal (FM/HM) system is of utmost importance for spintronics. Here, we report a comprehensive investigation of the magnetic and spin transport properties of biphase iron oxide (BPIO = α-Fe 2 O 3 +Fe 3 O 4 )/Pt films over a wide temperature range, 10K ≤ T ≤ 300K. In-plane (IP) and out-of-plane (OOP) magnetometry and radio frequency transverse susceptibility measurements confirm the characteristic features of the Verwey and Morin transitions at T V ~ 120K and TM ~ 200 K, respectively. Further, anisotropic magnetoresistance (AMR) is observed in the BPIO film, which arises mainly from the spin polarized tunneling of conduction electrons between neighboring uniformly magnetized grains through the resistive grain boundary. Spin Hall magnetoresistance (SMR) and spin Hall anomalous Hall effect (SH-AHE) are detected in the BPIO/Pt films. Around the T V , the temperature evolution of SMR shows a sharp maximum, while SH-AHE exhibits a steep decrease. Both SMR and SH-AHE are strongly susceptible to the Verwey transition but the Morin transition, indicating that the interfacial magnetism of our BPIO/Pt film is dominated by the Fe 3 O 4 phase rather than the α-Fe 2 O 3 phase.
The exploration of MXenes for electronic applications is a rapidly growing field in materials science. However, most research has focused on MXene films, with only a limited number of studies addressing the characterization of single-flake devices. In this work, we investigate the electronic and magnetotransport properties of Ti 3 C 2 T x single-flake devices, exploring the influence of structural defectivity on their transport mechanisms. We show that negative magnetoresistance present at low temperatures in single flake samples arises from weak localization, which we analyze to extract the phase coherence length of single-layer and multi-layer flakes. The study of magnetoresistance for this metallic MXene shows that the material exhibits quantum transport phenomena when intrinsic electronic behavior dominates. Moreover, by increasing the defect density via thermal annealing in ultrahigh vacuum, we uncover and characterize the metal-to-disordered metal transition in Ti 3 C 2 T x , shedding light on new properties and enriching fundamental knowledge about MXenes.
We have investigated magnetotransport properties of YRh 6 Ge 4 , which was recently predicted to be a triply degenerate nodal semimetal. We find it exhibits remarkable signatures of a chiral anomaly, manifested by large negative longitudinal magnetoresistance, the quadratic field dependence of magnetoconductance and the planar Hall effect. Furthermore, we have also observed Shubnikov-de Haas (SdH) quantum oscillations in the magnetoresistivity measurements on this material. The analyses of the SdH data reveal two pointlike Fermi surfaces and these pockets are found to host nearly massless fermions. The small size of these Fermi pockets is in a good agreement with the theoretical prediction that the triply degenerate point in YRh 6 Ge 4 is much closer to the Fermi level than previously demonstrated triply degenerate nodal semimetals such as MoP and WC. These results suggest YRh 6 Ge 4 may serve as a model system to probe exotic properties of three-component fermions and understand their underlying physics.
In this work, magnetization, electrical resistivity, magnetoresistance, and Hall resistivity of Ni 50 Mn 35 In 14.25 B 0.75 and Ni 50 Mn 35 In 14.5 B 0.5 Heusler alloys were studied in a temperature range $\textit{T}$ = 80–400 K in magnetic fields up to 20 kOe. Both alloys exhibit a martensitic transformation from a high-temperature ferromagnetic austenite phase to a low-temperature, low-magnetization martensitic phase. The electrical resistivity nearly doubles as a result of the martensitic transformation, reaching 180 and 100 µΩ cm in the martensitic states of Ni 50 Mn 35 In 14.25 B 0.75 and Ni 50 Mn 35 In 14.5 B 0.5 , respectively. The temperature dependence of the electrical resistivity does not corresponded with the Mooij correlation. The magnetoresistance is negative with a narrow negative peak at the martensitic transition. Normal and anomalous Hall effect coefficients were determined by fitting the field dependences of the Hall resistivity using magnetization data. The coefficients of the normal Hall effect for both compositions were found to decrease with temperature from positive values in the austenite to negative values in the martensite phase. None of the known correlations between the anomalous Hall effect coefficient and resistivity were satisfied. Significant changes in the values of the anomalous Hall coefficients during the martensitic transformation are explained by the difference in spin-up and spin-down state occupations in the martensite and austenite phases. First-principles calculations of the electronic structures confirm this explanation.
Here we demonstrate a first-principles method to study magnetotransport in materials by solving the Boltzmann transport equation (BTE) in the presence of an external magnetic field. Our approach employs ab initio electron-phonon interactions and takes spin-orbit coupling into account. We apply our method to various semiconductors (Si and GaAs) and two-dimensional (2D) materials (graphene) as representative case studies. The magnetoresistance, Hall mobility, and Hall factor in Si and GaAs are in very good agreement with experiments. In graphene, our method predicts a large magnetoresistance, consistent with experiments. Analysis of the steady-state electron occupations in graphene shows the dominant role of optical phonon scattering and the breaking of the relaxation time approximation. Our paper provides a detailed understanding of the microscopic mechanisms governing magnetotransport coefficients, establishing the BTE in a magnetic field as a broadly applicable first-principles tool to investigate transport in semiconductors and 2D materials.
The connectivity and inherent frustration of the kagome lattice can produce interesting electronic structures and behaviors in compounds containing this structural motif. Here we report the properties of Pt 3 X 2 (X = In and Tl) that adopt a double-layer kagome net structure related to that of the topologically nontrivial high-temperature ferromagnet Fe 3 Sn 2 and the density wave hosting compound V 3 Sb 2 . We examined the structural and physical properties of single crystal Pt 3 Tl 2 and polycrystalline Pt 3 In 2 using X-ray and neutron diffraction, magnetic susceptibility, heat capacity, and electrical transport measurements, along with density functional theory calculations of the electronic structure. Our calculations show that Fermi levels lie in pseudogaps in the densities of states with several bands contributing to transport, and this is consistent with our Hall effect, magnetic susceptibility, and heat capacity measurements. Although electronic dispersions, characteristic of simple kagome nets with nearest-neighbor hopping, are not clearly seen, likely due to the extended nature of the Pt 5d states, we do observe moderately large and non-saturating magnetoresistance values and quantum oscillations in the magnetoresistance and magnetization associated with the kagome nets of Pt.
One of the most promising avenues in 2D materials research is the synthesis of antiferromagnets employing 2D van der Waals (vdW) magnets. However, it has proven challenging, due in part to the complicated fabrication process and undesired adsorbates as well as the significantly deteriorated ferromagnetism at atomic layers. Here, the engineering of the antiferromagnetic (AFM) interlayer exchange coupling between atomically thin yet ferromagnetic CrTe 2 layers in an ultra-high vacuum-free 2D magnetic crystal, Cr 5 Te 8 is reported. By self-introducing interstitial Cr atoms in the vdW gaps, the emergent AFM ordering and the resultant giant magnetoresistance effect are induced. A large negative magnetoresistance (10%) with a plateau-like feature is revealed, which is consistent with the AFM interlayer coupling between the adjacent CrTe 2 main layers in a temperature window of 30 K below the Néel temperature. Notably, the AFM state has a relatively weak interlayer exchange coupling, allowing a switching between the interlayer AFM and ferromagnetic states at moderate magnetic fields. Here this work represents a new route to engineering low-power devices that underpin the emerging spintronic technologies, and an ideal laboratory to study 2D magnetism.