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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS2012

670-GHz Down- and Up-Converting HEMT-Based Mixers

A large category of scientific investigation takes advantage of the interactions of signals in the frequency range from 300 to 1,000 GHz and higher. This includes astronomy and atmospheric science, where spectral observations in this frequency range give information about molecular abundances, pressures, and temperatures of small-sized molecules such as water. Additionally, there is a minimum in the atmospheric absorption at around 670 GHz that makes this frequency useful for terrestrial imaging, radar, and possibly communications purposes. This is because 670 GHz is a good compromise for imaging and radar applications between spatial resolution (for a given antenna size) that favors higher frequencies, and atmospheric losses that favor lower frequencies. A similar trade-off applies to communications link budgets: higher frequencies allow smaller antennas, but incur a higher loss. All of these applications usually require converting the RF (radio frequency) signal at 670 GHz to a lower IF (intermediate frequency) for processing. Further, transmitting for communication and radar generally requires up-conversion from IF to the RF. The current state-of-the-art device for performing the frequency conversion is based on Schottky diode mixers for both up and down conversion in this frequency range for room-temperature operation. Devices that can operate at room temperature are generally required for terrestrial, military, and planetary applications that cannot tolerate the mass, bulk, and power consumption of cryogenic cooling. The technology has recently advanced to the point that amplifiers in the region up to nearly 1,000 GHz are feasible. Almost all of these have been based on indium phosphide pseudomorphic high-electron mobility transistors (pHEMTs), in the form of monolithic microwave integrated circuits (MMICs). Since the processing of HEMT amplifiers is quite differ en t from that of Schottky diodes, use of Schottky mixers requires separate MMICs for the mixers and amplifiers. Fabrication of all the down-/up-conversion circuitry on single MMICs, using a ll-HEMT circuits, would constitute a major advance in circuit simplicity.

Schlecht, Enrich T.↗
NASA NTRS2013

An All-Solid-State, Room-Temperature, Heterodyne Receiver for Atmospheric Spectroscopy at 1.2 THz

Heterodyne receivers at submillimeter wavelengths have played a major role in astrophysics as well as Earth and planetary remote sensing. All-solid-state heterodyne receivers using both MMIC (monolithic microwave integrated circuit) Schottky-diode-based LO (local oscillator) sources and mixers are uniquely suited for long-term planetary missions or Earth climate monitoring missions as they can operate for decades without the need for any active cryogenic cooling. However, the main concern in using Schottky-diode-based mixers at frequencies beyond 1 THz has been the lack of enough LO power to drive the devices because 1 to 3 mW are required to properly pump Schottky diode mixers. Recent progress in HEMT- (high-electron-mobility- transistor) based power amplifier technology, with output power levels in excess of 1 W recently demonstrated at W-band, as well as advances in MMIC Schottky diode circuit technology, have led to measured output powers up to 1.4 mW at 0.9 THz. Here the first room-temperature tunable, all-planar, Schottky-diode-based receiver is reported that is operating at 1.2 THz over a wide (≈20%) bandwidth. The receiver front-end (see figure) consists of a Schottky-diode-based 540 to 640 GHz multiplied LO chain (featuring a cascade of W-band power amplifiers providing around 120 to 180 mW at W-band), a 200-GHz MMIC frequency doubler, and a 600-GHz MMIC frequency tripler, plus a biasable 1.2-THz MMIC sub-harmonic Schottky-diode mixer. The LO chain has been designed, fabricated, and tested at JPL and provides around 1 to 1.5 mW at 540 o 640 GHz. The sub-harmonic mixer consists of two Schottky diodes on a thin GaAs membrane in an anti-parallel configuration. An integrated metal insulator metal (MIM) capacitor has been included on-chip to allow dc bias for the Schottky diodes. A bias voltage of around 0.5 V/diode is necessary to reduce the LO power required down to the 1 to 1.5 mW available from the LO chain. The epilayer thickness and doping profiles have been specifically optimized to maximize the mixer performance beyond 1 THz. The measured DSB noise temperatures and conversion losses of the receiver are 2,000 to 3,500 K and 12 to 14 dB, respectively, at 120 K, and 4,000 to 6,000 K and 13 to 15 dB, respectively, at 300 K. These results establish the state-of-the-art for all-solid-state, all-planar heterodyne receivers at 1.2 THz operating at either room temperature or using passive cooling only. Since no cryogenic cooling is needed, the receiver is eminently suited to atmospheric heterodyne spectroscopy of the outer planets and their moons.

Siles, Jose V.↗
NASA NTRS2013

A Cross-Track Cloud-Scanning Dual-Frequency Doppler (C2D2) Radar for the Proposed ACE Mission and Beyond

The National Resource Council’s Earth Science Decadal Survey” (NRCDS) has identified the Aerosol/Climate/Ecosystems (ACE) Mission as a priority mission for NASA Earth science. The NRC recommended the inclusion of "a cross-track scanning cloud radar with channels at 94 GHz and possibly 34 GHz for measurement of cloud droplet size, glaciation height, and cloud height". Several radar concepts have been proposed that meet some of the requirements of the proposed ACE mission but none have provided scanning capability at both 34 and 94 GHz due to the challenge of constructing scanning antennas at 94 GHz. In this paper, we will describe a radar design that leverages new developments in microwave monolithic integrated circuits (MMICs) and micro-machining to enable an electronically-scanned radar with both Ka-band (35 GHz) and W-band (94-GHz) channels. This system uses a dual-frequency linear active electronically-steered array (AESA) combined with a parabolic cylindrical reflector. This configuration provides a large aperture (3m x 5m) with electronic-steering but is much simpler than a two-dimension AESA of similar size. Still, the W-band frequency requires element spacing of approximately 2.5 mm, presenting significant challenges for signal routing and incorporation of MMICs. By combining (Gallium Nitride) GaN MMIC technology with micro-machined radiators and interconnects and silicon-germanium (SiGe) beamforming MMICs, we are able to meet all the performance and packaging requirements of the linear array feed and enable simultaneous scanning of Ka-band and W-band radars over swath of up to 100 km.

Aerosol/Climate/Ecosystems (ACE) Mission↗
NASA NTRS2017

High Density Packaging Technologies for RF Electronics in Small Spacecraft

This paper will describe a few high density packaging technologies which we are currently exploring for use in current and future small spacecraft applications. The three categories of technologies include organic multichip modules (MCMs), ceramic leadless surface mount technology (SMT) and 3D printed waveguide structures. There are many other packaging technologies that currently exist but these three were selected in part due to their long heritage in various commercial, military and space applications along with each having a relatively clear path to flight. For each of these technologies, detailed examples will be included in which hardware has been fabricated and tested for use in RF electronics for spacecraft transponders. The organic MCM example will be described in most detail and it utilizes a packaging technology by the name of CoreEZ which is a trademark of i3 Electronics. This MCM has shrunk a portion of our electronics down to 1/8th of its previous area. The CoreEZ technology has been shown to be rad hard beyond a total ionizing dose (TID) of 300kRad and the MCM which was fabricated has gone through thermal cycling and shown to have no degradation in performance. The ceramic leadless package examples include packages from high reliability manufactures by the name of KCB solutions and Barry Industries. In the case of KCB solutions, we have multiple products that will be described including a hermetic ceramic carrier which houses three microwave monolithic integrated circuits (MMICs) along with small discrete components. Finally, we will discuss the results of our search for a 3D printing process that allows us to reduce the cost and volume of our waveguide filters and diplexers for low cost small satellite applications. We have fabricated a few prototypes using direct metal laser sintering (DMLS) and metal coated plastics. Each of these packaging technology discussions will have a brief overview of its current and future use.

Aquirre, Fernando↗
NASA NTRS2016

High Density Packaging Technologies for RF Electronics in Small Spacecraft

This paper will describe a few high density packaging technologies which we are currently exploring for use in current and future small spacecraft applications. The three categories of technologies include organic multichip modules (MCMs), ceramic leadless surface mount technology (SMT) and 3D printed waveguide structures. There are many other packaging technologies that currently exist but these three were selected in part due to their long heritage in various commercial, military and space applications along with each having a relatively clear path to flight. For each of these technologies, detailed examples will be included in which hardware has been fabricated and tested for use in RF electronics for spacecraft transponders. The organic MCM example will be described in most detail and it utilizes a packaging technology by the name of CoreEZ which is a trademark of i3 Electronics. This MCM has shrunk a portion of our electronics down to 1/8th of its previous area. The CoreEZ technology has been shown to be rad hard beyond a total ionizing dose (TID) of 300kRad and the MCM which was fabricated has gone through thermal cycling and shown to have no degradation in performance. The ceramic leadless package examples include packages from high reliability manufactures by the name of KCB solutions and Barry Industries. In the case of KCB solutions, we have multiple products that will be described including a hermetic ceramic carrier which houses three microwave monolithic integrated circuits (MMICs) along with small discrete components. Finally, we will discuss the results of our search for a 3D printing process that allows us to reduce the cost and volume of our waveguide filters and diplexers for low cost small satellite applications. We have fabricated a few prototypes using direct metal laser sintering (DMLS) and metal coated plastics. Each of these packaging technology discussions will have a brief overview of its current and future use.

Schatzel, Donald↗
NASA NTRSDate not supplied

Benefits of Ka-band GaN MMIC High Power Amplifiers With Wide Bandwidth and High Spectral/Power Added Efficiencies for Cognitive Radio Platforms

A cognitive radio on a future NASA near-Earth spacecraft will be capable of sensing its environment and dynamically adapting its operating parameters to provide the desired SATCOM service to the mission. A key component that can enable this type of operation is a high-power amplifier (HPA) that resides on the radio platform. In this paper, we present the RF performance characteristics of a Ka-band gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) based HPA for cognitive radio platforms. These characteristics include the output power, gain, power added efficiency (PAE), RMS error vector magnitude (EVM), spectral efficiency, 3rd-order intermodulation distortion (IMD) products, spectrum, spectral regrowth, noise figure (NF), and phase noise. The data presented indicates that the HPA meets NTIA, military, and commercial spectral mask requirements. In addition, we discuss the benefits offered by the above performance characteristics toward the design and implementation of a cognitive radio platform. Furthermore, as examples, we discuss three potential use cases that apply artificial intelligence (AI) and machine learning (ML) techniques and exploit the performance characteristics discussed above to provide a knowledge-based cognitive radio platform design for SATCOM. Thus, cognitive radios with performance flexibility can enable roaming and provide seamless interoperability autonomously in the future between NASA, commercial, and other space networks owned by U.S. government agencies.

Gallium nitride↗
NASA NTRS2023

Benefits of Ka-band GaN MMIC High Power Amplifiers With Wide Bandwidth and High Spectral/Power Added Efficiencies for Cognitive Radio Platforms

A cognitive radio on a future NASA near-Earth spacecraft will be capable of sensing its environment and dynamically adapting its operating parameters to provide the desired SATCOM service to the mission. A key component that can enable this type of operation is a high-power amplifier (HPA) that resides on the radio platform. In this report, we present the RF performance characteristics of a Ka-band gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) based HPA for cognitive radio platforms. These characteristics include the output power, gain, power added efficiency (PAE), RMS error vector magnitude (EVM), spectral efficiency, 3rdorder intermodulation distortion (IMD) products, spectrum, spectral regrowth, noise figure (NF), phase noise, and group delay. The data presented indicates that the HPA meets NTIA, military, and commercial spectral mask requirements. In addition, we discuss the benefits offered by the above performance characteristics toward the design and implementation of a cognitive radio platform. Furthermore, as examples, we discuss three potential use cases that apply artificial intelligence (AI) and machine learning (ML) techniques and exploit the performance characteristics discussed above to provide a knowledge-based cognitive radio platform design for SATCOM. Thus, cognitive radios with performance flexibility can enable roaming and provide seamless interoperability autonomously in the future between NASA, commercial, and other space networks owned by U.S. government agencies.

Gallium nitride↗
NASA NTRSDate not supplied

A Spectrally Efficient Ka-Band GaN Power Amplifier with Scalable Power Combining Architecture for Lunar High Data Rate Direct-to-Earth Communications

The output power from a single gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC) power amplifier (PA) chip is limited to few watts. To achieve higher power, the output from several chips have to be combined. In this paper we present, the results of a study conducted to investigate a 2-way power combiner to combine the output power from two GaN MMIC based high power amplifier (HPA) chips The parameters investigated includes the power combiner characteristics, individual GaN MMIC based HPA output power, gain, and power added efficiency, and the overall performance of the combined amplifier.

Gallium Nitride↗
NASA NTRS1992

High-performance packaging for monolithic microwave and millimeter-wave integrated circuits

Packaging schemes were developed that provide low-loss, hermetic enclosure for advanced monolithic microwave and millimeter-wave integrated circuits (MMICs). The package designs are based on a fused quartz substrate material that offers improved radio frequency (RF) performance through 44 gigahertz (GHz). The small size and weight of the packages make them appropriate for a variety of applications, including phased array antenna systems. Packages were designed in two forms; one for housing a single MMIC chip, the second in the form of a multi-chip phased array module. The single chip array module was developed in three separate sizes, for chips of different geometry and frequency requirements. The phased array module was developed to address packaging directly for antenna applications, and includes transmission line and interconnect structures to support multi-element operation. All packages are fabricated using fused quartz substrate materials. As part of the packaging effort, a test fixture was developed to interface the single chip packages to conventional laboratory instrumentation for characterization of the packaged devices. The package and test fixture designs were both developed in a generic sense, optimizing performance for a wide range of possible applications and devices.

Shalkhauser, K. A.↗
NASA NTRS1992

High-performance packaging for monolithic microwave and millimeter-wave integrated circuits

Packaging schemes are developed that provide low-loss, hermetic enclosure for enhanced monolithic microwave and millimeter-wave integrated circuits. These package schemes are based on a fused quartz substrate material offering improved RF performance through 44 GHz. The small size and weight of the packages make them useful for a number of applications, including phased array antenna systems. As part of the packaging effort, a test fixture was developed to interface the single chip packages to conventional laboratory instrumentation for characterization of the packaged devices.

Shalkhauser, K. A.↗
NASA NTRS2010

An Integrated 520-600 GHz Sub-Harmonic Mixer and Tripler Combination Based on GaAs MMIC Membrane Planar Schottky Diodes

We present here the design, development and test of an integrated sub-millimeter front-end featuring a 520-600 GHz sub-harmonic mixer and a 260-300 GHz frequency tripler in a single cavity. Both devices used GaAs MMIC membrane planar Schottky diode technology. The sub-harmonic mixer/tripler circuit has been tested using conventional machined as well as silicon micro-machined blocks. Measurement results on the metal block give best DSB mixer noise temperature of 2360 K and conversion losses of 7.7 dB at 520 GHz. Preliminary results on the silicon micro-machined blocks give a DSB mixer noise temperature of 4860 K and conversion losses of 12.16 dB at 540 GHz. The LO input power required to pump the integrated tripler/sub-harmonic mixer for both packages is between 30 and 50 mW.

Monolithic Microwave Integrated Circuit, (MMIC)↗
NASA NTRS2006

Towards Terahertz MMIC Amplifiers: Present Status and Trends

This viewgraph presentation surveys the fastest Monolithic Millimeter-wave Integrated Circuit (MMIC) amplifiers to date; summarize previous solid state power amp results to date; reviews examples of MMICs, reviews Power vs. Gate periphery and frequency; Summarizes previous LNA results to date; reviews Noise figure results and trends toward higher frequency

FET ampllifiers↗
NASA NTRS2006

A G-band 160 GHz T/R Module Concept for Planetary Landing Radar

In this work, the concept of a G-band transmit/receive (T/R) module centered at 160 GHz was discussed. The design makes use of state-of-the-art G-band MMIC low noise amplifiers and power amplifiers, and a high speed SPDT InGaAs PIN diode switch. The paper reports on the designs, chip results, and the integration concept for a 160 GHz T/R module. The G-band T/R module has applications toward precision altimetry and velocimetry measurements in landing radar, such as in future planetary landers on the surface of Mars

power amplifier↗
NASA NTRS2012

CHARM: A CubeSat Water Vapor Radiometer for Earth Science

The Jet Propulsion Laboratory (JPL) and Ames Research Center (ARC) are partnering in the CubeSat Hydrometric Atmospheric Radiometer Mission (CHARM), a water vapor radiometer integrated on a 3U CubeSat platform, selected for implementation under NASA Hands-On Project Experience (HOPE-3). CHARM will measure 4 channels at 183 GHz water vapor line, subsets of measurements currently performed by larger and more costly spacecraft (e.g. ATMS, AMSU-B and SSMI/S). While flying a payload that supports SMD science objectives, CHARM provides a hands-on opportunity to develop technical, leadership, and project skills. CHARM will furthermore advance the technology readiness level (TRL) of the 183 GHz receiver subsystem from TRL 4 to TRL 6 and the CubeSat 183 GHz radiometer system from TRL 4 to TRL 7.

Monolithic microwave integrated circuits (MMICs)↗
NASA NTRS2006

Demonstration of a Sub-Millimeter Wave Integrated Circuit (S-MMIC) using InP HEMT with a 35-nm Gate

In this paper, we present two single stage MMIC amplifiers with the first demonstrating a measured S21 gain of 3-dB at 280-GHz and the second demonstrating 2.5-dB gain at 300- GHz, which is the threshold of the sub-millimeter wave regime. The high-frequency operation is enabled by a high-speed InP HEMT with a 35-nm gate. This is the first demonstrated S21 gain at sub-millimeter wave frequencies in a MMIC.

millimeter - wave↗
NASA NTRS1993

Novel miniaturised wideband baluns for MIC and MMIC applications

Very compact novel planar broadband baluns are described. Each balun consists of two Lange couplers. Less than 0.3 dB and 2.5 deg for the amplitude and phase balances, respectively, have been measured over the 1.0-2.2 GHz bandwidth for a microstrip balun. As compared with other reported baluns, these baluns are simpler, more compact, easier to design, and fabricated on only one side of the substrate. They are thus very attractive for microwave integrated and monolithic integrated circuit applications.

Nguyen, C.↗