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166 records · Page 10

Collective states and charge density waves in the group IV transition metal trichalcogenides

It has been nearly a century since the original mechanism for charge density wave (CDW) formation was suggested by Peierls. Since then, the term has come to describe several related concepts in condensed matter physics, having their origin in either the electron–phonon or electron–electron interaction. The vast majority of CDW literature deals with systems that are metallic, where discussions of mechanisms related to the Fermi surface are valid. Recently, it has been suggested that semiconducting systems such as TiS 3 and TiSe 2 exhibit behavior related to CDWs. In such cases, the origin of the behavior is more subtle and intimately tied to electron–electron interactions. We introduce the different classifications of CDW systems that have been proposed and discuss work on the group IV transition metal trichalcogenides (TMTs) (ZrTe 3 , HfTe 3 , TiTe 3 , and TiS 3 ), which are an exciting and emergent material system whose members exhibit quasi-one-dimensional properties. TMTs are van der Waals materials and can be readily studied in the few-layer limit, opening new avenues to manipulating collective states. We emphasize the semiconducting compound TiS 3 and suggest how it can be classified based on available data. Although we can conjecture on the origin of the CDW in TiS 3 , further measurements are required to properly characterize it.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Simplified tuning of long-range corrected density functionals for use in symmetry-adapted perturbation theory

Long considered a failure, second-order symmetry-adapted perturbation theory (SAPT) based on Kohn–Sham orbitals, or SAPT0(KS), can be resurrected for semiquantitative purposes using long-range corrected density functionals whose asymptotic behavior is adjusted separately for each monomer. Here, as in other contexts, correct asymptotic behavior can be enforced via “optimal tuning” based on the ionization energy theorem of density functional theory, but the tuning procedure is tedious, expensive for large systems, and comes with a troubling dependence on system size. Here, we show that essentially identical results are obtained using a fast, convenient, and automated tuning procedure based on the size of the exchange hole. In conjunction with “extended” (X)SAPT methods that improve the description of dispersion, this procedure achieves benchmark-quality interaction energies, along with the usual SAPT energy decomposition, without the hassle of system-specific tuning.

74 ATOMIC AND MOLECULAR PHYSICS↗

Valley pumping via edge states and the nonlocal valley Hall effect in two-dimensional semiconductors

Recent experiments have studied the temperature and gate voltage dependence of nonlocal transport in bilayer graphene, identifying features thought to be associated with the two-dimensional semiconductor's bulk intrinsic valley Hall effect. Here, we use both simple microscopic tight-binding ribbon models and phenomenological bulk transport equations to emphasize the impact of sample edges on the nonlocal voltage signals. We show that the nonlocal valley Hall response is sensitive to electronic structure details at the sample edges and that it is enhanced when the local longitudinal conductivity is larger near the sample edges than in the bulk. We discuss recent experiments in light of these findings and also discuss the close analogy between electron pumping between valleys near two-dimensional sample edges in the valley Hall effect and bulk pumping between valleys due to the chiral anomaly in three-dimensional topological semimetals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Entropy and Seebeck signals meet on the edges

Here, we explore the electronic entropy per particle s and Seebeck coefficient S in zigzag graphene ribbons. Pristine and edge-doped ribbons are considered using tight-binding models to inspect the role of edge states in the observed thermal transport properties. As a band gap opens when the ribbons are doped at one or both edges, due to asymmetric edge potentials, we find that s and S signals are closely related to each other: both develop sharp dip-peak line shapes as the chemical potential lies in the gap, while the ratio s/S exhibits a near-constant value equal to the elementary charge e at low temperatures. This constant ratio suggests that S can be seen as the transport differential entropy per charge, as suggested by some authors. Our calculations also indicate that measurement of s and S may be useful as a spectroscopic probe of different electronic energy scales involved in such quantities in gapped materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗