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At least 181 records · Page 10

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NASA NTRS1982

Study of the photovoltaic effect in thin film barium titanate

The basic mechanism associated with the photovoltaic phenomena observed in the R.F. sputtered BaTiO3/silicon system is presented. Series of measurements of short circuit photocurrents and open circuit photovoltage were made. The composition depth profiles and the interface characteristics of the BaTiO3/silicon system were investigated for a better understanding of the electronic properties. A Scanning Auger Microprobe combined with ion in depth profiling were used.

Grannemann, W. W.↗

NASA NTRS1994

Electron-irradiated two-terminal, monolithic InP/Ga0.47In0.53As tandem solar cells and annealing of radiation damage

Radiation damage results from two-terminal monolithic InP/Ga(0.47)In(0.53)As tandem solar cells subject to 1 MeV electron irradiation are presented. Efficiencies greater than 22 percent have been measured by the National Renewable Energy Laboratory from 2x2 sq cm cells at 1 sun, AMO (25 C). The short circuit current density, open circuit voltage and fill factor are found to tolerate the same amount of radiation at low fluences. At high fluence levels, slight differences are observed. Decreasing the base amount of radiation at the Ga(0.47)In(0.53)As bottomcell improved the radiation resistance of J(sub sc) dramatically. This is turn, extended the series current flow through the subcell substantially up to a fluence of 3x10(exp 15) cm(exp -2) compared to 3x10(exp 14) cm(exp -2), as observed previously. The degradation of the maximum power output form tandem device is comparable to that from shallow homojunction (SHJ) InP solar cells, and the mechanism responsible for such degradation is explained in terms of the radiation response of the component cells. Annealing studies revealed that the recovery of the tandem cell response is dictated by the annealing characteristics exhibited by SHJ InP solar cells.

Cotal, H. L.↗

NASA NTRS1997

Pre-Flight Dark Forward Electrical Testing of the Mir Cooperative Solar Array

The Mir Cooperative Solar Array (MCSA) was developed jointly by the United States (US) and Russia to provide approximately 6 kW of photovoltaic power to the Russian space station Mir. After final assembly in Russia, the MCSA was shipped to the NASA Kennedy Space Center (KSC) in the summer of 1995 and launched to Mir in November 1995. Program managers were concerned of the potential for MCSA damage during the transatlantic shipment and the associated handling operations. To address this concern, NASA Lewis Research Center (LERC) developed an innovative dark-forward electrical test program to assess the gross electrical condition of each generator following shipment from Russia. The use of dark test techniques, which allow the array to remain in the stowed configuration, greatly simplifies the checkout of large area solar arrays. MCSA dark electrical testing was successfully performed at KSC in July 1995 following transatlantic shipment. Data from this testing enabled engineers to quantify the effects of potential MCSA physical damage that would degrade on-orbit electrical performance. In this paper, an overview of the principles and heritage of photovoltaic array dark testing is given. The specific MCSA dark test program is also described including the hardware, software, testing procedures and test results. The current-voltage (4) response of both solar cell circuitry and by-pass diode circuitry was obtained. To guide the development of dark test hardware, software and procedures, a dedicated FORTRAN computer code was developed to predict the dark 4 responses of generators with a variety of feasible damage modes. By comparing the actual test data with the predictions, the physical condition of the generator could be inferred. Based on this data analysis, no electrical short-circuits or open-circuits were detected. This suggested the MCSA did not sustain physical damage that affected electrical performance during handling and shipment from Russia to the US. Good agreement between the test data and computational predictions indicated MCSA electrical performance was amenable to accurate analysis and was well understood.

Kerslake, Thomas W.↗

NASA NTRS2003

Dye-Sensitized Solar Cells for Space Power

During the course of this grant, dye-sensitized solar cells were prepared and characterized. The solar cells were prepared using materials (dyes, electrolytes, transparent conductive oxide coated glass, nanocrystalline TiO2) entirely prepared in-house, as well as prepared using materials available commercially. Complete cells were characterized under simulated AM0 illumination. The best cell prepared at NASA had an AM0 efficiency of 1.22% for a 1.1 sq cm cell. Short circuit current (Isc), open circuit voltage (Voc) and fill factor (FF) for the cell were 6.95 mA, 618 mV and 42.8%, respectively. For comparison purposes, two commercially prepared dye-sensitized solar cells were obtained from Solaronix SA, Aubonne, Switzerland. The Solaronix cells were also characterized under simulated AM0 illumination. The best cell from Solaronix had an active area of 3.71 sq cm and measured an AM0 efficiency of 3.16%. with Isc, Voc and FF of 45.80 mA, 669.6 mV and 52.3%, respectively. Both cells from Solaronix were rapid thermal cycled between -80 C and 80 C. Thermal cycling led to a 4.6% loss of efficiency in one of the cells and led to nearly a complete failure in the second cell.

Harris, Jerry D.↗

NASA NTRS1976

Correlation between nonequilibrium thermodynamic theory and V-I curves of a thermionic converter

The methods of irreversible thermodynamics are used as a basis for developing a transport theory applicable to thermionic cesium diodes. This theory is applied in describing certain aspects of experimental voltage-current (V-I) characteristic curves of a thermionic diode. Emphasis is placed on the open-circuit voltage and short-circuit current of the V-I curves. Experimental results show that the open-circuit voltage is essentially independent of the interelectrode spacing, whereas the short-circuit current varies inversely with the interelectrode separation. The inverse dependence is in agreement with the results of the present analysis and also with results expected from diffusion theory, which has been used in other analyses. In fact, the theory used in this investigation reduces to diffusion theory under special assumptions. Deviations from diffusion theory, which were found in experimental results, can be accounted for using the theory developed in this paper.

Robinson, L. B.↗

NASA NTRS1985

Microstrip termination effects on dielectric resonator filters

Dielectric resonator filters coupled to microstrip lines appear to answer the requirements of high performance and small size and weight that must be satisfied for use in satellite-based radiometers. The open-circuit and short-circuit types of coupling dielectric resonators to microstrip lines were compared with respect to radiation losses at various frequencies. The filters were fabricated from 1.6 mm Duroid board. The termination impedances for the microstrip lines were measured using a calibrated HP 8510 network analyzer. The values for radiation resistance obtained experimentally for both types of coupling agreed well with the values calculated from the Lewin theory (1960). It was found that the use of short-circuit coupling results in significantly reduced radiation resistance compared to the use of open-circuit lines. Improvement increases with increased frequency.

Trew, R. J.↗

DOE OSTI2022

Traps and transport resistance are the next frontiers for stable non-fullerene acceptor solar cells

Stability is one of the most important challenges facing material research for organic solar cells (OSC) on their path to further commercialization. In the high-performance material system PM6:Y6 studied here, we investigate degradation mechanisms of inverted photovoltaic devices. We have identified two distinct degradation pathways: one requires the presence of both illumination and oxygen and features a short-circuit current reduction, the other one is induced thermally and marked by severe losses of open-circuit voltage and fill factor. We focus our investigation on the thermally accelerated degradation. Our findings show that bulk material properties and interfaces remain remarkably stable, however, aging-induced defect state formation in the active layer remains the primary cause of thermal degradation. The increased trap density leads to higher non-radiative recombination, which limits the open-circuit voltage and lowers the charge carrier mobility in the photoactive layer. Furthermore, we find the trap-induced transport resistance to be the major reason for the drop in fill factor. Our results suggest that device lifetimes could be significantly increased by marginally suppressing trap formation, leading to a bright future for OSC.

14 SOLAR ENERGY↗

NASA NTRS1984

Towards a 20 percent efficient silicon solar cell

A project is underway at the University of New South Wales aimed at producing a 20 percent efficient silicon solar cell. A prerequisite for obtaining such a significant increase in cell efficiency is the improvement of the open circuit voltage of these cells. Two techniques are described which have produced experimental devices with open circuit voltages of 690 mV or higher. These high voltage techniques have been combined with other high efficiency design features to produce silicon cells with independently measured energy conversion efficiencies in excess of 19 percent under standard terrestrial test conditions (direct beam AM1.5 spectrum, 100 mW/sq cm, 28 C).

Green, M. A.↗

DOE OSTI2021

Data-Driven Cyber-Attack Detection for PV Farms via Time-Frequency Domain Features

The internetworking of grid-connected power electronics converters (PECs) in photovoltaic (PV) farms has inevitably expanded the cyber-attack surfaces. Here this paper presents a comprehensive study on cyber-attack detection and diagnosis for PEC-enabled PV farms via single waveform sensor to distinguish between normal conditions, open-circuit faults, short-circuit faults, and cyber-attacks. To our knowledge, this has not been attempted before. Firstly, we propose frequency-domain magnitude-based residuals to identify short-circuit faults and a time-domain mean current vector-based feature to distinguish open-circuit faults from other threats. These features can fully reflect the specific physical characteristics of PV farms during threat duration. Secondly, unlike micro phasor measurement units (µPMU) and raw electric waveform-based methods, the proposed innovative features can address novel cyber-attacks that are excluded from the training process. Thirdly, an online hardware-in-the-loop (HIL) testbed using the OPAL-RT real-time digital simulator has verified the effectiveness. The monitoring system runs in real-time while using HIL as an operational solar farm and a National Instruments (NI) data acquisition card as the electric waveform sensor at the point of coupling.

42 ENGINEERING↗

NASA NTRS1975

Advances in the theory and application of BSF cells

The characteristics and behavior of p(+), p solar cells were investigated. The p(+), p cells were made by the removal of the n(+) surface layers from n(+), p p(+), BSF cells followed by application of a suitable contact to the resultant p(+), p structures. The open circuit voltage of p(+), p cells was found to increase with increasing 'p' bulk resistivity. The measured open circuit velocity-temperature coefficients were positive and increased with increasing resistivity. An outline of prior limitations in solar cell design is presented, and the removal of these limitations through use of BSF effects is pointed out. The study of BSF effects made feasible production of very thin high efficiency silicon cells as well as high resistivity-high efficiency cells, two desirable types of silicon cells which were previously impossible to make.

Mandelkorn, J.↗

NASA NTRS1987

Determination of lifetime and surface recombination velocity of p-n junction solar cells and diodes by observing transients

The unified view of transient methods for the determination of recombination lifetime tau and back surface recombination velocity S presented here for silicon solar cells and diodes attempts to define limitations of existing methods and to evolve improvements. The presence of sizable junction capacitance for silicon devices under forward voltage invalidates the use of conventional open-circuit voltage decay (OCVD) and reverse recovery. This led Green (1983) to his method of compensated open-circuit voltage decay, in which the addition of an external resistor shunting the solar cell partially corrects for the presence of the junction capacitance. Setting this resistance to zero produces an electrical short-circuit current-decay method, which has the advantage of enabling determination of both tau and S. In an alternate approach, one may insert the functional dependence of the junction capacitance on forward voltage. This new method, denoted by the acronym OCVDCAP, enables the determination of tau with apparently greater accuracy than that obtained by previous methods utilizing voltage transients. But OCVDCAP has in common with the previous methods that it determines tau only and has practical utility only for determining tau of long-base devices. This means that it is useful only for thick base regions. In principle, however, it has an advantage over short-circuit current decay: it requires only pressure contacts, not ohmic contacts, and therefore may be used to determine tau after key processing steps in manufacturing.

Lindholm, Fredrik A.↗

NASA NTRS2001

Effects of AEA Cell-Bypass-Switch Closure on Charged EOS-Aqua NiH2 Cell

The nominal performance of AEA CBPD under simulated EOS-Aqua/Aura flight hardware configuration has been demonstrated. There is no evidence of cell rupture or excessive heat production during or after CBPD switch activation under simulated high cell impedance (open-circuit cell failure mode). Inadvertent CBPD switch activation with a charged cell (low impedance path) intermittently closes and opens up the switch, therefore the device may or may not provide protection against future open-circuit cell failure. Further testing with switches F01 and F02 may provide clarification. The formation of a continuous low impedance path (a homogeneous low melting point alloy), has been confirmed - which is the expected mode of operation.

Keys, Denney↗

NASA NTRS2007

A Method to have Multi-Layer Thermal Insulation Provide Damage Detection

Design and testing of a multi-layer thermal insulation system that also provides debris and micrometeorite damage detection is presented. One layer of the insulation is designed as an array of passive open-circuit electrically conductive spiral trace sensors. The sensors are a new class of sensors that are electrically open-circuits that have no electrical connections thereby eliminating one cause of failure to circuits. The sensors are powered using external oscillating magnetic fields. Once electrically active, they produce their own harmonic magnetic fields. The responding field frequency changes if any sensor is damaged. When the sensors are used together in close proximity, the inductive coupling between sensors provides a means of telemetry. The spiral trace design using reflective electrically conductive material provides sufficient area coverage for the sensor array to serves as a layer of thermal insulation. The other insulation layers are designed to allow the sensor s magnetic field to permeate the insulation layers while having total reflective surface area to reduce thermal energy transfer. Results of characterizing individual sensors and the sensor array s response to punctures are presented. Results of hypervelocity impact testing using projectiles of 1-3.6 millimeter diameter having speeds ranging from 6.7-7.1 kilometers per second are also presented.

Woodward, Stanley E.↗

NASA NTRS1993

Radiation effects in Ga(0.47)In(0.53)As solar cells

The effects of irradiating Ga(0.47)In(0.53)As p-i-n junctions with 1 MeV electrons were measured using Deep Level Transient Spectroscopy (DLTS) and both dark and illuminated (1 sun, air mass zero (AM0)) current-voltage (I-V) measurements. The I-V measurements were made over the range 100K less than T less than 350K. Temperature coefficients of the Ga(0.47)In(0.53)As photovoltaic parameters are presented which follow the same general behavior as other solar cell materials (e.g. Si and GaAs). Fits of the dark I-V data to the two term diode equation before irradiation were satisfactory, yielding an estimated band-gap energy of 0.79 eV. The recombination component of the dark current was found to increase linearly with fluence. DLTS detected two radiation-induced defect levels one shallow (E(sub c)-0.10 eV) and one near mid-gap (E(sub c)-0.29 eV), and it is the near mid-gap level which is expected to be the cause of the dark current increase. The radiation-induced degradation of the open circuit voltage is shown to be accurately predicted from the dark I-V measurements. The degradation of the open circuit voltage dominated the radiation response of the photovoltaic parameters while the short circuit current was only moderately degraded. This behavior is qualitatively explained in terms of the base thickness and dopant level. Appropriate changes in the device structure are suggested which should increase the radiation resistance. Isochronal thermal annealing induced recovery in the photovoltaic parameters at approximately 400K, coinciding with an annealing stage of the near mid-gap defect level.

Walters, R. J.↗

NASA NTRS1974

Closed cycle MHD power generation experiments in the NASA Lewis Facility

Many modifications were made in the MHD facility. These include a redesign of the MHD duct interior, addition of mixing bars, increased electrical isolation of all the high temperature components from each other and from ground, and experimentation with various cesium seed vaporization and injection techniques. With the exception of the cesium system which needs further improvement the above modifications were quite successful and resulted in improvements in generator performance. The facility was run for a total of 400 hours in the past year, with 70 hours of this operation at temperatures of 2000 K or more with hot generator walls. With the exception of replacing one cracked brick in the MHD channel no repairs were required in the high temperature loop components for the duration of these tests. Uniform Faraday and Hall voltage profiles were obtained and the Faraday open circuit voltage varied from 90 to 100 percent of the ideal uBh. The magnitudes of the measured parameters are: Faraday open circuit voltage approximately 70 V, total Faraday current approximately 20 A, Hall voltage approximately 250 V, power output approximately 300 W, and power density .036 W/cu cm.

Sovie, R. J.↗

NASA NTRS2008

Simulating the Gradually Deteriorating Performance of an RTG

Degra (now in version 3) is a computer program that simulates the performance of a radioisotope thermoelectric generator (RTG) over its lifetime. Degra is provided with a graphical user interface that is used to edit input parameters that describe the initial state of the RTG and the time-varying loads and environment to which it will be exposed. Performance is computed by modeling the flows of heat from the radioactive source and through the thermocouples, also allowing for losses, to determine the temperature drop across the thermocouples. This temperature drop is used to determine the open-circuit voltage, electrical resistance, and thermal conductance of the thermocouples. Output power can then be computed by relating the open-circuit voltage and the electrical resistance of the thermocouples to a specified time-varying load voltage. Degra accounts for the gradual deterioration of performance attributable primarily to decay of the radioactive source and secondarily to gradual deterioration of the thermoelectric material. To provide guidance to an RTG designer, given a minimum of input, Degra computes the dimensions, masses, and thermal conductances of important internal structures as well as the overall external dimensions and total mass.

Wood, Eric G.↗

NASA NTRS1983

Process Research on Polycrystalline Silicon Material (PROPSM)

The performance limiting mechanisms in large grain (greater than 1-2 mm in diameter) polycrystalline silicon was investigated by measuring the illuminated current voltage (I-V) characteristics of the minicell wafer set. The average short circuit current on different wafers is 3 to 14 percent lower than that of single crystal Czochralski silicon. The scatter was typically less than 3 percent. The average open circuit voltage is 20 to 60 mV less than that of single crystal silicon. The scatter in the open circuit voltage of most of the polycrystalline silicon wafers was 15 to 20 mV, although two wafers had significantly greater scatter than this value. The fill factor of both polycrystalline and single crystal silicon cells was typically in the range of 60 to 70 percent; however several polycrystalline silicon wafers have fill factor averages which are somewhat lower and have a significantly larger degree of scatter.

Culik, J. S.↗

NASA NTRS1984

Power control for ac motor

A motor controller employing a triac through which power is supplied to a motor is described. The open circuit voltage appearing across the triac controls the operation of a timing circuit. This timing circuit triggers on the triac at a time following turn off which varies inversely as a function of the amplitude of the open circuit voltage of the triac.

Dabney, R. W.↗