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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS2013

Oxygen Permeability and Grain-Boundary Diffusion Applied to Alumina Scales

High-temperature oxygen permeability measurements had determined grain-boundary diffusivities (deltaD(sub gb)) in bulk polycrystalline alumina (Wada, Matsudaira, and Kitaoka). They predict that oxygen deltaD(sub gb,O) varies with oxygen pressure as P(O2)(sup -1/6) at low pressure whereas aluminum deltaD(sub gb),Al varies with P(O2)(sup +3/16) at high pressure. These relations were used to evaluate alumina scale growth in terms of diffusivity and grain size. A modified Wagner treatment for dominant inward oxygen growth produces the concise solution: П(sub i) = k(sub p,i)×G(sub i) = 12 deltaD(sub gb,O,int), where П(sub i) is a constant and k(sub p,i) and G(sub i) refer to instantaneous values of the scale parabolic growth constant and grain size, respectively. A commercial FeCrAl(Zr) alloy was oxidized at 1100 to 1400 degC to determine k(sub p,i), interfacial grain size, П, and thus deltaD(sub gb,O,int). The deltaD(sub gb,O,int) values predicted from oxidation at (375 kJ/mole) were about 20 times less than those obtained above (at 298 kJ/mole), but closer than extrapolations from high-temperature bulk measurements. The experimental oxidation results agree with similar FeCrAl(X) studies, especially where both k(sub p,i) and G(sub i) were characterized. This complete approach accounts for temperature-sensitive oxidation effects of grain enlargement, equilibrium interface pressure variation, and grain-boundary diffusivity.

Smialek, James L.↗
NASA NTRSDate not supplied

SiO2 Activity Measurements in the Gd2O3-SiO2 System Via Knudsen Effusion Mass Spectrometry (KEMS)

Environmental barrier coatings (EBCs) are required for the use of silicon carbide (SiC)-based ceramic matrix composites (CMCs) in gas turbine engines, as they protect the SiO 2 thermally grown oxide (TGO) formed at the CMC/coating interface from volatilization in a combustion environment. Current-generation EBCs consist of a silicon bond coat and a rare earth (RE) silicate topcoat. The RE silicate topcoat is exposed to high-velocity steam during engine operation, and SiO 2 within the coating can preferentially volatilize to form Si(OH) 4 gas species, albeit at a lesser degree than SiO 2 alone. Therefore, it is of interest to investigate the stability of these materials in steam as a function of their RE. In this study, SiO 2 activity, which can be related to the partial pressure of Si(OH) 4 , was measured across the Gd 2 O 3 -SiO 2 phase diagram, which includes Gd 2 SiO 5 , Gd 9.33 (SiO 4 ) 6 O 2 , and Gd 2 Si 2 O 7 as line compounds, via Knudsen Effusion Mass Spectrometry (KEMS). Values obtained for the Gd 2 O 3 -SiO 2 system were compared to those of other RE2O3-SiO2 systems and contextualized in terms of EBC viability.

EBCs↗
NASA NTRS2000

Mechanisms of Protonic Nonvolatile Memory Device

A nonvolatile memory device based on protonic transport in oxides has been proposed. The mobile H+ ions are introduced into the SiO2 layer by annealing Si/SiO2/Si structures in H2 at temperatures greater than 500 deg C. This effect has only been observed for confined oxides that have been annealed at greater than or equal to 1100 C prior to the hydrogenation anneal. This includes buried oxides such as Unibond and SIMOX as well as thermal oxides annealed with a polysilicon cap. An applied field moves the charge within the oxide and the charge stops moving when the field is removed. In a memory device, the hydrogen-annealed oxide is the gate oxide and the position of the mobile charge is sensed by the shift of the I-V curve. Much is still not understood about the motion of the charge across the buried oxide. Previous work has assumed that H+ transport and the time it takes to traverse the oxide is governed by interactions within the bulk of the oxide. Based on parameters that affect the transport time, we conclude that H+ trapping and detrapping at the Si/SiO2 interface are more important than H+ interactions within the oxide bulk. These parameters include the applied field, the H+ concentration and the oxide thickness. One consequence is that projections of device write-time based on the previous assumptions of H+ transport mechanisms may be overly optimistic.

P J Macfarlane↗
NASA NTRS1987

Cross-system comparisons of soil nitrogen transformations and nitrous oxide flux in tropical forest ecosystems

Soil nitrogen transformations and nitrous oxide flux across the soil-air interface have been measured in a variety of tropical forest sites and correlated with patterns of nitrogen circulation. Nitrogen mineralizaton and nitrification potentials were found to be high in the relatively fertile Costa Rica sites and the Amazonian oxisol/ultisols, intermediate in Amazonian white sand soils, and low in the Hawaiian montane sites. Nitrous oxide fluxes ranged from 0 to 6.2 ng/sq cm per h, and the mean flux per site was shown to be highly correlated with mean nitrogen mineralization.

Matson, Pamela A.↗
NASA NTRS2011

Moisture-Induced TBC Spallation on Turbine Blade Samples

Delayed failure of TBCs is a widely observed laboratory phenomenon, although many of the early observations went unreported. The weekend effect or DeskTop Spallation (DTS) is characterized by initial survival of a TBC after accelerated laboratory thermal cycling, then failure by exposure to ambient humidity or water. Once initiated, failure can occur quite dramatically in less than a second. To this end, the water drop test and digital video recordings have become useful techniques in studies at NASA (Smialek, Zhu, Cuy), DECHMA (Rudolphi, Renusch, Schuetze), and CNRS Toulouse/SNECMA (Deneux, Cadoret, Hervier, Monceau). In the present study the results for a commercial turbine blade, with a standard EB-PVD 7YSZ TBC top coat and Pt-aluminide diffusion bond coat are reported. Cut sections were intermittently oxidized at 1100, 1150, and 1200 C and monitored by weight change and visual appearance. Failures were distributed widely over a 5-100 hr time range, depending on temperature. At some opportune times, failure was captured by video recording, documenting the appearance and speed of the moisture-induced spallation process. Failure interfaces exhibited alumina scale grains, decorated with Ta-rich oxide particles, and alumina inclusions as islands and streamers. The phenomenon is thus rooted in moisture-induced delayed spallation (MIDS) of the alumina scale formed on the bond coat. In that regard, many studies show the susceptibility of alumina scales to moisture, as long as high strain energy and a partially exposed interface exist. The latter conditions result from severe cyclic oxidation conditions, which produce a highly stressed and partially damaged scale. In one model, it has been proposed that moisture reacts with aluminum in the bond coat to release hydrogen atoms that embrittle the interface. A negative synergistic effect with interfacial sulfur is also invoked.

Smialek, James↗
NASA NTRS2011

Moisture-Induced TBC Spallation on Turbine Blade Samples

Delayed failure of TBCs is a widely observed laboratory phenomenon, although many of the early observations went unreported. "The weekend effect" or "DeskTop Spallation" (DTS) is characterized by initial survival of a TBC after accelerated laboratory thermal cycling, then failure by exposure to ambient humidity or water. Once initiated, failure can occur quite dramatically in less than a second. To this end, the water drop test and digital video recordings have become useful techniques in studies at NASA (Smialek, Zhu, Cuy), DECHMA (Rudolphi, Renusch, Schuetze), and CNRS Toulouse/SNECMA (Deneux, Cadoret, Hervier, Monceau). In the present study the results for a commercial turbine blade, with a standard EB-PVD 7YSZ TBC top coat and Pt-aluminide diffusion bond monitored by weight change and visual appearance. Failures were distributed widely over a 5-100 hr time range, depending on temperature. At some opportune times, failure was captured by video recording, documenting the appearance and speed of the moisture-induced spallation process. Failure interfaces exhibited alumina scale grains, decorated with Ta-rich oxide particles, and alumina inclusions as islands and streamers. The phenomenon is thus rooted in moisture-induced delayed spallation (MIDS) of the alumina scale formed on the bond coat. In that regard, many studies show the susceptibility of alumina scales to moisture, as long as high strain energy and a partially exposed interface exist. The latter conditions result from severe cyclic oxidation conditions, which produce a highly stressed and partially damaged scale. In one model, it has been proposed that moisture reacts with aluminum in the bond coat to release hydrogen atoms that 'embrittle' the interface. A negative synergistic effect with interfacial sulfur is also invoked.

Smialek, James L.↗
NASA NTRS1981

Chemical composition of the SiO2/InSb interface as determined by X-ray photoelectron spectroscopy

In connection with the relatively poor insulating characteristics of the native oxides of most III-V compound semiconductors, there has been interest in the development of deposited dielectric layers for surface passivation and MOS device fabrication on III-V compound semiconductor substrates. The chemical system of SiO2 deposited on single-crystal InSb substrates has been proposed for the fabrication of IR CCD. The considered investigation is concerned with a detailed examination of the chemical nature of the interactions between deposited and native oxides using X-ray photoelectron spectroscopy (XPS) in conjunction with a chemical-etching technique for depth profiling. The compositional structure of the interfaces obtained in the SiO2/native oxide/InSb system is derived on the basis of an intensity analysis of XPS spectra. Thermal oxidation of the InSb substrate is found to result in an In-rich native oxide and excess elemental Sb at the native oxide/substrate interface.

Vasquez, R. P.↗
NASA NTRS1976

Model for thickness dependence of radiation charging in MOS structures

The model considers charge buildup in MOS structures due to hole trapping in the oxide and the creation of sheet charge at the silicon interface. The contribution of hole trapping causes the flatband voltage to increase with thickness in a manner in which square and cube dependences are limiting cases. Experimental measurements on samples covering a 200 - 1000 A range of oxide thickness are consistent with the model, using independently obtained values of hole-trapping parameters. An important finding of our experimental results is that a negative interface charge contribution due to surface states created during irradiation compensates most of the positive charge in the oxide at flatband. The tendency of the surface states to 'track' the positive charge buildup in the oxide, for all thicknesses, applies both in creation during irradiation and in annihilation during annealing. An explanation is proposed based on the common defect origin of hole traps and potential surface states.

Viswanathan, C. R.↗
NASA NTRS2019

Transparent Conducting Oxides as Cathodes in Li-O2 Batteries: A First Principles Computational Investigation

Li-O2 batteries have traditionally used carbon based electrodes (graphite, buckypaper) as the cathode of choice due toits good electrical conductivity, stability against non-aqueous electrolytes like dimethoxyethane (DME) and ease ofhandling. But, the carbon cathode also leads to formation of carbonate by-products that increase overpotentials duringcharging leading to degradation of the cathode and reduction of cyclability. Recent investigations have focused on using metal-oxides like SnO2, TiO2 as viable cathodes-alternatives in Li-O2 systems. In this paper, we investigate transparent conducting oxides (TCOs) as cathodes with focus on the interface between the TCO surfaces and the discharge product, Li2O2, in the Li-O2 battery using first principles computations.

transparent conducting oxides↗
NASA NTRS1984

RF sputtered silicon and hafnium nitrides as applied to 440C steel

Silicon nitride and hafnium nitride coatings were deposited on oxidized and unoxidized 440C stainless steel substrates. Sputtering was done in mixtures of argon and nitrogen gases from pressed powder silicon nitride and from hafnium metal targets. The coatings and the interface between the coating and substrate were investigated by X-ray diffractometry, scanning electron microscopy, energy dispersive X-ray analysis and Auger electron spectroscopy. Oxide was found at all interfaces with an interface width of at least 600 A for the oxidized substrates and at least 300 A for the unoxidized substrates. Scratch test results demonstrate that the adhesion of hafnium nitride to both oxidized and unoxidized 440C is superior to that of silicon nitride. Oxidized 440C is found to have increased adhesion, to both nitrides, over that of unoxidized 440C. Coatings of both nitrides deposited at 8 mtorr were found to have increased adhesion to both oxidized and unoxidized 440C over those deposited at 20 mtorr.

Grill, A.↗
NASA NTRS1993

XPS analysis of the effect of fillers on PTFE transfer film development in sliding contacts

The development of transfer films atop steel counterfaces in contact with unfilled and bronze-filled PTFE has been studied using X-ray photoelectron spectroscopy. The sliding apparatus was contained within the vacuum of the analytical system, so the effects of the native oxide, hydrocarbon, and adsorbed gaseous surface layers of the steel upon the PTFE transfer behavior could be studied in situ. For both the filled and the unfilled PTFE, cleaner surfaces promoted greater amounts of transfer. Metal fluorides, which formed at the transfer film/counterface interface, were found solely in cases where the native oxide had been removed to expose the metallic surface prior to sliding. These fluorides also were found at clean metal/PTFE interfaces formed in the absence of frictional contact. A fraction of these fluorides resulted from irradiation damage inherent in XPS analysis. PTFE transfer films were found to build up with repeated sliding passes, by a process in which strands of transfer filled in the remaining counterface area. Under these reported test conditions, the transfer process is not expected to continue atop previously deposited transfer films. The bronze-filled composite generated greater amounts of transfer than the unfilled PTFE. The results are discussed relative to the observed increase in wear resistance imparted to PTFE by a broad range of inorganic fillers.

Blanchet, T. A.↗
NASA NTRS1986

Interfaces and failure mechanisms in Al-SiC composites

Aluminum alloys reinforced with silicon carbide whiskers exhibit significantly higher strength and modulus than the unreinforced alloys. However, the composites also exhibit low ductility and poor fracture toughness for reasons which are not well-understood. In this study, high resolution and conventional TEM techniques are used to analyze interface microstructure and failure mechanisms in P/M 2124 and 6061 aluminum alloys reinforced with silicon carbide whiskers. Interfacial oxides are typical of both composite materials, often distributed in clusters or in a discrete layer 2-5 nm thick along the whisker-matrix interface. Highly deformed regions beneath bulk tensile fracture surfaces reveal possible fracture nucleation centers as well as sites of stress concentration where intense plastic strain has occurred. Observations of such highly deformed regions include (1) void initiation at whisker ends, (2) interface decohesion involving the thin oxide layer, (3) transverse cracks in whiskers, and (4) cracks in large constituent particles. TEM results are presented and discussed in relation to mechanisms of composite failure.

Nutt, S. R.↗
NASA NTRS2002

C/sic Life Prediction for Propulsion Applications

Accurate life prediction is critical to successful use of ceramic matrix composites (CMC). The tools to accomplish this are immature and not oriented toward the behavior of carbon fiber reinforced silicon carbide (C/SiC), the primary system of interest for many reusable and single mission launch vehicle propulsion and airframe applications. This paper describes an approach and process made to satisfy the need to develop an integrated life prediction system that addresses mechanical durability and environmental degradation of C/SiC. Issues such as oxidation, steam and hydrogen effects on material behavior are discussed. Preliminary tests indicate that steam will aggressively remove SiC seal coat and matrix in line with past experience. The kinetics of water vapor reaction with carbon fibers is negligible at 600 C, but comparable to air attack at 1200 C. The mitigating effect of steam observed in fiber oxidation studies has also been observed in stress rupture tests. Detailed microscopy of oxidized specimens is being carried out to develop the oxidation model. Carbon oxidation kinetics are reaction controlled at intermediate temperatures and diffusion controlled at high temperatures (approximately 1000 C). Activation energies for T-300 and interface pyrolytic carbon were determined as key inputs to the oxidation model. Crack opening as a function of temperature and stress was calculated. Mechanical property tests to develop and verify the probabilistic life model are very encouraging except for residual strength prediction. Gage width is a key variable governing edge oxidation of seal coated specimens. Future efforts will include architectural effects, enhanced coatings, biaxial tests, and LCF. Modeling will need to account for combined effects.

Levine, Stanley R.↗
NASA NTRS2002

C/SIC Life Prediction for Propulsion Applications

Accurate life prediction is critical to successful use of ceramic matrix composites (CMC). The tools to accomplish this are immature and not oriented toward the behavior of carbon fiber reinforced silicon carbide (C/SiC), the primary system of interest for many reusable and single mission launch vehicle propulsion and airframe applications. This paper describes an approach and progress made to satisfy the need to develop an integrated life prediction system that addresses mechanical durability and environmental degradation of C/SiC. Issues such as oxidation, steam and hydrogen effects on material behavior are discussed. Preliminary tests indicate that stream will aggressively remove SiC seal coat and matrix in line with past experience. The kinetics of water vapor reaction with carbon fibers is negligible at 600 C, but comparable to air attack at 1200 C. The mitigating effect of steam observed in fiber oxidation studies has also been observed in stress rupture tests. Detailed microscopy of oxidized specimens is being carried out to develop the oxidation model. Carbon oxidation kinetics are reaction controlled at intermediate temperatures and diffusion controlled at high temperatures (approx. 1000 C). Activation energies for T-300 and interface pyrolytic carbon were determined as key inputs to the oxidation model. Crack opening as a function of temperature and stress was calculated. Mechanical property tests to develop and verify the probabilistic life model are very encouraging except for residual strength prediction. Gage width is a key variable governing edge oxidation of seal coated specimens. Future efforts will include architectural effects, enhanced coatings, biaxial tests, and LCF. Modeling will need to account for combined effects.

Levine, Stanley R.↗
NASA NTRS1986

Competition for sulfide among colorless and purple sulfur bacteria in cyanobacterial mats

The vertical zonation of light, O2, H2S, pH, and sulfur bacteria was studied in two benthic cyanobacterial mats from hypersaline ponds at Guerrero Negro, Baja California, Mexico. The physical-chemical gradients were analyzed in the upper few mm at < or = 100 micrometers spatial resolution by microelectrodes and by a fiber optic microprobe. In mats, where oxygen produced by photosynthesis diffused far below the depth of the photic zone, colorless sulfur bacteria (Beggiatoa sp.) were the dominant sulfide oxidizing organisms. In a mat, where the O2-H2S interface was close to the photic zone, but yet received no significant visible light, purple sulfur bacteria (Chromatium sp.) were the dominant sulfide oxidizers. Analysis of the spectral light distribution here showed that the penetration of only 1% of the incident near-IR light (800-900 nm) into the sulfide zone was sufficient for the mass development of Chromatium in a narrow band of 300 micromoles thickness. The balance between O2 and light penetration down into the sulfide zone thus determined in micro-scale which type of sulfur bacteria became dominant.

NASA Center ARC↗
NASA NTRS1978

X-ray photoelectron spectroscopy study of radiofrequency-sputtered refractory compound steel interfaces

Radiofrequency sputtering was used to deposit Mo2C, Mo2B5, and MoSi2 coatings on 440C steel substrates. Both sputter etched and preoxidized substrates were used, and the films were deposited with and without a substrate bias of -300 V. The composition of the coatings was measured as a function of depth by X-ray photoelectron spectroscopy combined with argon ion etching. In the interfacial region there was evidence that bias produced a graded interface in Mo2B5 but not in Mo2C. Oxides of iron and of all film constituents except carbon were presented in all cases but the iron oxide concentration was higher and the layer thicker on the preoxidized substrates. The film and iron oxides were mixed in the MoSi2 and Mo2C films but layered in the Mo2B5 film. The presence of mixed oxides correlates with enhanced film adhesion.

Wheeler, D. R.↗
NASA NTRS1986

Etching Silicon Films With Xenon Difluoride

Microscopic circuit structures prepared for probing. Xenon difluoride removes relatively large amounts of silicon from integratedcircuit or solar-cell structures while leaving SiO2, Si3N4, Al2O3, and other compounds intact. In Etching Apparatus, solid XeF2 sublimated in vacuum, then allowed to flow over sample at controlled rate and pressure. Wafer etched from back to expose SiO2 and Al layers for spectroscopic analysis of SiO2/Al interface. Using XeF2 technique, silicon wafer with oxide layer reduced in thickness from standard 300 micrometer to as little as 10 nanometer without adversely affecting oxide.

Hecht, M. H.↗