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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Systems and methods for nano-tribological manufacturing of nanostructures

The presently disclosed subject matter provides systems and methods for generating nanostructures from tribological films. A probe tip can be immersed in a liquid mixture comprising a plurality of ink particles suspended in a medium. A substrate on which the tribological film is to be generated can also be immersed in the liquid mixture. A processor controlling movement of the probe tip can be configured to cause the probe tip to slide along the substrate in a shape of a desired pattern of the nanostructure with a contact force to cause one or more ink particles of the plurality of ink particles compressed underneath the probe tip to be transformed into a tribological film onto the substrate in the shape of the desired pattern of the nanostructure.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS1997

An Experimental Study of a Radially Arranged Thin Film Heat Flux Gauge

A new thin-film heat-flux gauge was designed and fabricated on three different substrate materials. Forty pairs of Pt-Pt/10% Rh thermocouple junctions were deposited in a circular pattern on the same plane of the substrate. Over the thermocouples, 5 and 10 micron thick thermal resistance layers were deposited to create a temperature gradient across those layers. Calibration and testing of these gauges were carried out in an arc-lamp calibration facility. The heat flux calculated from the gauge output is in good agreement with the value obtained from the pre-calibrated standard sensor. A CO2 laser was also used to test the steady-state and dynamic responses of the heat-flux gauge. During the steady-state test, the time constant for the heating period was 30 s. The frequency response of the heat-flux gauge was measured in the frequency domain using a CO2 laser and a chopper. The responses from an infrared detector and the heat-flux gauge were measured simultaneously and compared. It was found that the thin-film heat-flux gauge has a dynamic frequency response of 3 kHz.

Cho, Christoper S. K.↗
DOE OSTI2023

Moldable photovoltaic solar cell module

A moldable photovoltaic module is provided. The module includes a flexible polymeric flex-circuit substrate having an electrically conductive printed wiring pattern and solder pads defined on it. Small photovoltaic cells are affixed to the flex-circuit substrate by back-surface contacts in electrical contact with the solder pads. At least one thermoformable polymeric film is joined to the flex-circuit substrate. Each said solder pad comprises a solder composition that, after an initial melt, has a melting point that lies above at least a portion of the temperature range for thermoforming the polymeric film.

14 SOLAR ENERGY↗
DOE OSTI2022

Heteroepitaxy of FCC-on-FCC systems of large misfit

Here, to understand the effects of lattice mismatch on heteroepitaxial growth, we have studied the equilibrium structure and orientation relationships (ORs) of FCC films grown epitaxially on FCC substrates, using molecular dynamics simulations in conjunction with embedded atom method potentials. Three film/substrate systems have been investigated, namely: Ag on Cu, Ag on Ni and Pb on Al. These systems cover a significant range of lattice mismatch, from 12.6% for Ag/Cu to 21.8% for Pb/Al. For each system, the ORs of films on six different substrate orientations, namely: (100), (511), (311), (211), (322) and (111), have been investigated. Films on these susbstrates cover a gradual transition from the oct-cube orientation relationship, which occurs only on (100) substrates, to the heterotwin orientation relationship, which often occurs on (111) substrates. It is found that the resulting ORs vary systematically with substrate orientation, but that the pattern of variation is almost identical for all three systems, and therefore largely independent of mismatch. However, the manner in which mismatch is accommodated does depend on the magnitude of mismatch. Simulations point to an important role for edge-to-edge matching and defects such as stacking faults. An analysis of these results in terms of transformation strains highlights the distinction between the ORs, which are largely independent of mismatch, and the local interfacial structure, which changes directly with mismatch.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Homoepitaxial growth of 9,10-diphenylanthracene

Organic single crystals are often shown to have significantly improved optoelectronic properties over polycrystalline thin films such as exciton diffusivity and carrier mobility. There is growing interest in incorporating such crystals in organic electronics despite a number of challenges. In this work, the homoepitaxial vapor phase growth modes for 9,10-diphenylanthracene (DPA) homoepitaxy are mapped as a function of growth rate and temperature using in situ ultra-low current reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), and atomic force microscopy (AFM). Vapor phase deposition was performed on free-standing single crystal DPA substrates, which show clear Kikuchi patterns. At room temperature, a transition from Frank-Van der Merwe layer-by-layer growth to step-flow growth is observed as the deposition rate is decreased, while at lower temperatures a Stranski-Krastanov layer-plus-island growth is observed. This is the first demonstration of true step-flow growth from room temperature vapor phase deposition for organic semiconductors and is reminiscent of traditional semiconductor growth regimes. Accordingly, these results could lead to improved control over growth and doping of organic single crystals, and lead to enhanced single crystal organic optoelectronic applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Plasmonics-Enhanced UV Photocatalytic Water Purification

Titanium dioxide (TiO 2 ) is commonly used for photocatalytic decomposition of organic contaminants for the purpose of water purification. One promising method to enhance TiO 2 photocatalysis is the incorporation of surface plasmon resonance on its surface where photocatalytic reactions take place. Herein, a novel methodology using plasmonically tuned aluminum nanostructures to enhance the rate of photodecomposition of aqueous methyl orange is demonstrated. These nanostructures are tuned to the TiO 2 band gap in the UV regime and patterned on TiO 2 -coated substrates using nanosphere lithography. Compared to a blank TiO 2 film, the plasmonics is found to enhance the initial TiO 2 photocatalytic rate by up to 10 times, and further enhancement is possible upon refinement of the plasmonic technology.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Structure of V-defects in long wavelength GaN-based light emitting diodes

The V-defect is a naturally occurring inverted hexagonal pyramid structure that has been studied in GaN and InGaN growth since the 1990s. Strategic use of V-defects in pre-quantum well superlattices or equivalent preparation layers has enabled record breaking efficiencies for green, yellow, and red InGaN light emitting diodes (LEDs) utilizing lateral injection of holes through the semi-polar sidewalls of the V-defects. In this article, we use advanced characterization techniques such as scattering contrast transmission electron microscopy, high angle annular dark field scanning transmission electron microscopy, x-ray fluorescence maps, and atom probe tomography to study the active region compositions, V-defect formation, and V-defect structure in green and red LEDs grown on (0001) patterned sapphire and (111) Si substrates. We identify two distinct types of V-defects. The “large” V-defects are those that form in the pre-well superlattice and promote hole injection, usually nucleating on mixed (Burgers vector b = ±a±c⁠) character threading dislocations. In addition, “small” V-defects often form in the multi-quantum well region and are believed to be deleterious to high-efficiency LEDs by providing non-radiative pathways. The small V-defects are often associated with basal plane stacking faults or stacking fault boxes. Furthermore, we show through scattering contrast transmission electron microscopy that during V-defect filling, the threading dislocation, which runs up the center of the V-defect, will “bend” onto one of the six {10$\overline{1}$1} semi-polar planes. In conclusion, this result is essential to understanding non-radiative recombination in V-defect engineered LEDs.

42 ENGINEERING↗
NASA NTRS1984

Integrating IR detector imaging systems

An integrating IR detector array for imaging is provided in a hybrid circuit with InSb mesa diodes in a linear array, a single J-FET preamplifier for readout, and a silicon integrated circuit multiplexer. Thin film conductors in a fan out pattern deposited on an Al2O3 substrate connect the diodes to the multiplexer, and thick film conductors also connect the reset switch and preamplifier to the multiplexer. Two phase clock pulses are applied with a logic return signal to the multiplexer through triax comprised of three thin film conductors deposited between layers. A lens focuses a scanned image onto the diode array for horizontal read out while a scanning mirror provides vertical scan.

Bailey, G. C.↗
NASA NTRS1991

SiGe/Si heterojunction internal photoemission long-wavelength infrared detectors fabricated by molecular beam epitaxy

A new SiGe/Si heterojunction internal photoemission (HIP) long-wavelength infrared (LWIR) detector has been fabricated by molecular beam epitaxy (MBE). The detection mechanism of the SiGe/Si HIP detector is infrared absorption in the degenerately doped p+-SiGe layer followed by internal photoemission of photoexcited holes over a heterojunction barrier. By adjusting the Ge concentration in the SiGe layer, and, consequently, the valence band offset between SiGe and Si, the cutoff wavelength of SiGe HIP detectors can be extended into the LWIR (8-17-micron) regime. Detectors were fabricated by growing p+-SiGe layers using MBE on patterned p-type Si substrates. The SiGe layers were boron-doped, with concentrations ranging from 10 to the 19th/cu cm to 4 x 10 to the 20th/cu cm. Infrared absorption of 5-25 percent in a 30-nm-thick p+-SiGe layer was measured in the 3-20-micron range using a Fourier transform infrared spectrometer. Quantum efficiencies of 3-5 percent have been obtained from test devices in the 8-12-micron range.

Lin, True-Lon↗
NASA NTRS1992

Millimeter-wave and terahertz integrated circuit antennas

This paper presents a comprehensive review of integrated circuit antennas suitable for millimeter and terahertz applications. A great deal of research was done on integrated circuit antennas in the last decade and many of the problems associated with electrically thick dielectric substrates, such as substrate modes and poor radiation patterns, have been understood and solved. Several new antennas, such as the integrated horn antenna, the dielectric-filled parabola, the Fresnel plate antenna, the dual-slot antenna, and the log-periodic and spiral antennas on extended hemispherical lenses, have resulted in excellent performance at millimeter-wave frequencies, and are covered in detail in this paper. Also, a review of the efficiency definitions used with planar antennas is given in detail in the appendix.

Rebeiz, Gabriel M.↗
NASA NTRS2000

Smallest Nanoelectronic with Atomic Devices with Precise Structures

Since its invention in 1948, the transistor has revolutionized our everyday life - transistor radios and TV's appeared in the early 1960s, personal computers came into widespread use in the mid-1980s, and cellular phones, laptops, and palm-sized organizers dominated the 1990s. The electronics revolution is based upon transistor miniaturization; smaller transistors are faster, and denser circuitry has more functionality. Transistors in current generation chips are 0.25 micron or 250 nanometers in size, and the electronics industry has completed development of 0.18 micron transistors which will enter production within the next few years. Industry researchers are now working to reduce transistor size down to 0.13 micron - a thousandth of the width of a human hair. However, studies indicate that the miniaturization of silicon transistors will soon reach its limit. For further progress in microelectronics, scientists have turned to nanotechnology to advance the science. Rather than continuing to miniaturize transistors to a point where they become unreliable, nanotechnology offers the new approach of building devices on the atomic scale [see sidebar]. One vision for the next generation of miniature electronics is atomic chain electronics, where devices are composed of atoms aligned on top of a substrate surface in a regular pattern. The Atomic Chain Electronics Project (ACEP) - part of the Semiconductor Device Modeling and Nanotechnology group, Integrated Product Team at the NAS Facility has been developing the theory of understanding atomic chain devices, and the author's patent for atomic chain electronics is now pending.

Yamada, Toshishige↗
NASA NTRS2000

All-Metal Magnetic RAM

The factors that enter into the development of an all-metal, nonvolatile magnetic RAM, in which multilayer giant magnetoresistive films are used for all functions - storage, readout, and support electronics - are described. Four significant characteristics are expected to favor all-metal over hybrid magnetic RAM. First, silicon-technology fabrication requires a large number of masking steps, including complex ones such as ion implantation. Conversely, all-metal technology is inherently simple: fewer masking steps, no doping, scaling to lithographic limits, very little operating power. Second, the all-metal footprint is significantly smaller than the hybrid one. Third, an all-metal RAM is expected to be able to be miniaturized to lithographic limits; miniaturization of hybrid magnetic RAMs is likely to be limited by the semiconductor circuitry. Finally, semiconductor processing and magnetic processing in MRAM are done separately because the former requires high temperatures, whereas magnetic fabrication is a low-temperature process. By contrast, because both GMR electronics and the memory elements are made of the same materials, the two major components are deposited and patterned concurrently on the same substrate.

Torok, E. J.↗
NASA NTRS2009

Alternative Packaging for Back-Illuminated Imagers

An alternative scheme has been conceived for packaging of silicon-based back-illuminated, back-side-thinned complementary metal oxide/semiconductor (CMOS) and charge-coupled-device image-detector integrated circuits, including an associated fabrication process. This scheme and process are complementary to those described in "Making a Back-Illuminated Imager With Back-Side Connections" (NPO-42839), NASA Tech Briefs, Vol. 32, No. 7 (July 2008), page 38. To avoid misunderstanding, it should be noted that in the terminology of imaging integrated circuits, "front side" or "back side" does not necessarily refer to the side that, during operation, faces toward or away from a source of light or other object to be imaged. Instead, "front side" signifies that side of a semiconductor substrate upon which the pixel pattern and the associated semiconductor devices and metal conductor lines are initially formed during fabrication, and "back side" signifies the opposite side. If the imager is of the type called "back-illuminated," then the back side is the one that faces an object to be imaged. Initially, a back-illuminated, back-side-thinned image-detector is fabricated with its back side bonded to a silicon handle wafer. At a subsequent stage of fabrication, the front side is bonded to a glass wafer (for mechanical support) and the silicon handle wafer is etched away to expose the back side. The frontside integrated circuitry includes metal input/output contact pads, which are rendered inaccessible by the bonding of the front side to the glass wafer. Hence, one of the main problems is to make the input/output contact pads accessible from the back side, which is ultimately to be the side accessible to the external world. The present combination of an alternative packaging scheme and associated fabrication process constitute a solution of the problem.

Pain, Bedabrata↗
NASA NTRS2009

Fabricating Radial Groove Gratings Using Projection Photolithography

Projection photolithography has been used as a fabrication method for radial grove gratings. Use of photolithographic method for diffraction grating fabrication represents the most significant breakthrough in grating technology in the last 60 years, since the introduction of holographic written gratings. Unlike traditional methods utilized for grating fabrication, this method has the advantage of producing complex diffractive groove contours that can be designed at pixel-by-pixel level, with pixel size currently at the level of 45 45 nm. Typical placement accuracy of the grating pixels is 10 nm over 30 nm. It is far superior to holographic, mechanically ruled or direct e-beam written gratings and results in high spatial coherence and low spectral cross-talk. Due to the smooth surface produced by reactive ion etch, such gratings have a low level of randomly scattered light. Also, due to high fidelity and good surface roughness, this method is ideally suited for fabrication of radial groove gratings. The projection mask is created using a laser writer. A single crystal silicon wafer is coated with photoresist, and then the projection mask, with its layer of photoresist, is exposed for patterning in a stepper or scanner. To develop the photoresist, the fabricator either removes the exposed areas (positive resist) of the unexposed areas (negative resist). Next, the patterned and developed photoresist silicon substrate is subjected to reactive ion etching. After this step, the substrate is cleaned. The projection mask is fabricated according to electronic design files that may be generated in GDS file format using any suitable CAD (computer-aided design) or other software program. Radial groove gratings in off-axis grazing angle of incidence mount are of special interest for x-ray spectroscopy, as they allow achieving higher spectral resolution for the same grating area and have lower alignment tolerances than traditional in-plane grating scheme. This is especially critical for NASA Constellation- X project that will utilize hundreds of gratings all of which need to be precisely aligned for x-ray observation of space.

Iazikov, Dmitri↗
NASA NTRS2016

Controllable Planar Optical Focusing System

An optical device has a first metasurface disposed over a substrate. A high-contrast pattern of the first metasurface is operable for modifying, over a first phase profile, a phase front of an incident light beam. A second metasurface, is disposed over a plane parallel to the first metasurface with a second high-contrast pattern and operable for shaping, over a second phase profile, the modified phase front of the incident light beam into a converging spherical phase front. A spacer layer, in which the modified phase front of the incident light beam diffracts, is disposed in a controllably changeable separation between the first and second metasurfaces. Controllably changing the separation between the first and the second metasurfaces by a first distance correspondingly changes the position of the focus point of the converging spherical phase front by a second distance significantly greater than the first distance.

Arbabi, Amir↗
DOE OSTI2020

Solder hermetic sealing for OLEDs

An OLED device comprising a substrate with a top surface; a first electrode covering the top surface of the substrate; a first insulating structure patterned over a portion of the first electrode where the pattern defines an inside area of the first electrode that is completely surrounded by the insulating structure, and an outside area of the first electrode not covered by the insulating structure; at least one organic layer for light emission within the inside area defined by the insulating structure; a second electrode over the at least one organic layer within the inside area defined by the insulating structure and at least partially over the first insulating structure; a cover slip located at least over the second electrode in the inside area defined by the insulating structure; and an electrically conductive solder seal making a hermetic seal between the insulating structure and the cover slip where the solder seal is in electrical contact with the second electrode. The insulating structure is desirably made of glass frit.

42 ENGINEERING↗
DOE OSTI2023

Trophic interactions shape the spatial organization of medium-chain carboxylic acid producing granular biofilm communities

Abstract Granular biofilms producing medium-chain carboxylic acids (MCCA) from carbohydrate-rich industrial feedstocks harbor highly streamlined communities converting sugars to MCCA either directly or via lactic acid as intermediate. We investigated the spatial organization and growth activity patterns of MCCA producing granular biofilms grown on an industrial side stream to test (i) whether key functional guilds (lactic acid producing Olsenella and MCCA producing Oscillospiraceae) stratified in the biofilm based on substrate usage, and (ii) whether spatial patterns of growth activity shaped the unique, lenticular morphology of these biofilms. First, three novel isolates (one Olsenella and two Oscillospiraceae species) representing over half of the granular biofilm community were obtained and used to develop FISH probes, revealing that key functional guilds were not stratified. Instead, the outer 150–500 µm of the granular biofilm consisted of a well-mixed community of Olsenella and Oscillospiraceae, while deeper layers were made up of other bacteria with lower activities. Second, nanoSIMS analysis of 15N incorporation in biofilms grown in normal and lactic acid amended conditions suggested Oscillospiraceae switched from sugars to lactic acid as substrate. This suggests competitive-cooperative interactions may govern the spatial organization of these biofilms, and suggests that optimizing biofilm size may be a suitable process engineering strategy. Third, growth activities were similar in the polar and equatorial biofilm peripheries, leaving the mechanism behind the lenticular biofilm morphology unexplained. Physical processes (e.g., shear hydrodynamics, biofilm life cycles) may have contributed to lenticular biofilm development. Together, this study develops an ecological framework of MCCA-producing granular biofilms that informs bioprocess development.

09 BIOMASS FUELS↗
DOE OSTI2023

Nanofabrication and Demonstration of a Direct-Write Microevaporator

Direct-write vapor deposition is a new technique that would enable one-step 3D maskless nanofabrication on a variety of substrates. A novel silicon chip-based microevaporator is developed that allows evaporant to exit through 2000–300 nm nozzles while held at distances comparable to the nozzle diameter from the substrate by a three-axis nanopositioning stage in vacuum. This results in a localized deposition on the substrate, which may be scanned relative to the substrate to produce direct-write patterns. The performance of the microevaporator is tested by creating localized depositions of various materials and the line-writing potential is demonstrated. The relationship between linewidth and source-to-substrate distance is investigated by the application of Knudsen's cosine law and Monte-Carlo simulations, and then utilized to approximate the source-to-substrate distance from performed depositions.

36 MATERIALS SCIENCE↗