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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS2021

Evaluation of asynchronous geiger-mode avalanche photodiode arrays for deep-space optical communications

The NASA Psyche mission is set to explore an asteroid located between Mars and Jupiter with a launch date in 2022. On-board the Psyche spacecraft is experimental demonstrator technology that will allow scientists to explore the capabilities of optical communications – a program called Deep Space Optical Communication (DSOC) led by Jet Propulsion Laboratory (JPL). DSOC seeks to improve communications performance by developing a space-based Flight Laser Transceiver (FLT) and a ground-based transceiver to enable photon-efficient communications with equipment in deep space. An integral part to this FLT system is a high-efficiency photon-counting camera (PCC) that is able to detect both the 1064nm uplink/beacon laser photons and 1550nm downlink laser photons with low background noise, and is capable of withstanding the rigors of space-travel. The paper details the characterization of several asynchronous Geiger-Mode Avalanche Photodiode (GmAPD) arrays developed by MIT Lincoln Laboratory for use in the PCC- specifically evaluating the temperature dependence of background noise, photon detection efficiency at 1064nm and 1550nm wavelengths, pixel lifetime testing, and angle of acceptance measurements. The results of this characterization are used to determine the nominal conditions for the device to operate in while in flight to maintain an efficient link with the ground-based transceiver.

Duerr, E.↗
NASA NTRS2021

Probabilistic Processing of Asynchronous Geiger-Mode Avalanche Photodiode Arrays for Background Rate Measurements

A system-level performance evaluation of Geiger-mode avalanche photodiode (GmAPD) arrays requires accurate measurement and prediction of the background rate of the device due to dark counts and other spurious detection events. Since a GmAPD detector reports only a binary value and timestamp associated with an avalanche event, dark count rates are typically measured by averaging thousands of frames to support a statistically significant measurement. For both synchronous and asynchronous detector, the Poisson distributed background rates are referenced to the time each pixel is armed. Unlike for synchronous GmAPD imagers where all the pixels are armed to an array-wide arm signal, an asynchronous pixel operates independently from its neighboring pixels; requiring the background rates to be calculated using an interarrival histogram. For both types of imagers, the background rate is typically evaluated by fitting an exponential distribution to a fixed window within a measured histogram of time intervals between detection events However, if the statistics of the background rate are insufficient – whether that is due to low population sizes, saturation, or a large dynamic range of population size across the array, the pixel, or array-wide, performance metrics may report results with varying accuracy. This paper reports on an implementation of an algorithm that evaluates GmAPD background rates based on statistical metrics rather than fixed windows. The algorithm functions by determining the appropriate integration window within the interarrival time histogram based on a per-pixel count rate set by a predetermined tolerable measurement error. The implementation of the algorithm allows us to characterize GmAPD arrays with orders of magnitude spread in background rates across the detector using common statistical parameters.

Mumolo, J.↗
DOE OSTI2022

Avalanche photodiode and an optical receiver having the same

Examples described herein relate to an avalanche photodiode (APD) and an optical receiver including the APD. The APD may include a substrate and a photon absorption region disposed on the substrate. The substrate may include a charge carrier acceleration region under the photon absorption region; a charge region adjacent to the charge carrier acceleration region; and a charge carrier multiplication region adjacent to the charge region. The charge carrier acceleration region, the charge region, and the charge carrier multiplication region are laterally formed in the substrate. When a biasing voltage is applied to the optoelectronic device, photon-generated free charge carriers may be generated in the photon absorption region and are diffused into the charge carrier acceleration region. The charge carrier acceleration region is configured to accelerate the photon-generated free charge carriers prior to the photon-generated free charge carriers entering into the charge region and undergoing impact ionization in the charge carrier multiplication region.

Yuan, Yuan↗
DOE OSTI2021

Facile Measurement of the Rotation of a Single Optically Trapped Nanoparticle Using the Diagonal Ratio of a Quadrant Photodiode

Optical tweezers are a powerful tool for exploring physical properties of particles in various environments through analysis of their dynamics in a trapping potential. Analysis of the trapped particle's position is often done using interferometric back-focal-plane detection microscopy in which interference between the trapping laser and the light interacting with the trapped particle is projected on a quadrant photo-diode (QPD). The QPD measurements are almost universally the voltage ratios between the transverse components of the detector (left/right; up/down) that are calibrated to ascertain particle positions and orientations (i.e., rotation). In this paper, we demonstrate how measuring the diagonal ratio of the QPD allows tracking the spinning and orbital motion of optically trapped objects with enhanced sensitivity compared to the conventional transverse ratio and reveals additional information about particle dynamics. The diagonal ratio "balances" the signal from opposite sides of the QPD, allowing common mode noise reduction and increased measurement sensitivity of the rotating nanospheres at frequencies from below 200 Hz to above 15 kHz. We show that the variability in particle rotation rates is due to slight differences in the aspect ratio of the nanoparticles. We also measure in situ a gradual acceleration in the spinning frequency of trapped nanoparticles due to photothermal shedding of surface ligands and the resulting decrease of rotational friction in solution. The accelerating particles spin at rates exceeding 30 kHz and are eventually "optically printed" onto the glass coverslip on top of the liquid cell enclosure. The diagonal ratio is a simple, readily available, and powerful enabler for measuring rotational dynamics with a 5-fold sensitivity increase over conventional QPD measurements. This affords opportunities for controlling the orientational dynamics of trapped nanoparticles, which is crucial for various applications, including nanoscale mechanical motors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Ultrafast carrier dynamics in multiple quantum well p–i–n photodiodes

Quantum well (QW) structures are widely used in lasers, semiconductor optical amplifiers, and modulators, enabling their monolithic integration on the same substrate. As optoelectronic systems evolve to meet the growing bandwidth demands in the terahertz regime, a deep understanding of ultrafast carrier dynamics in QW structures becomes essential. We introduce a comprehensive model to analyze the ultrafast dynamics of interband photo-excited carriers in QW p–i–n structures and to calculate their frequency response. This model characterizes the entire photocarrier transport process, including carrier escape from QWs and movement across heterojunction interfaces. Additionally, we outline theoretical methods for calculating carrier escape times from both QWs and heterojunction interfaces. Using a GaAs/AlGaAs QW p–i–n structure as a case study, we discuss the effects of carrier escape times from QWs and heterojunction interfaces, as well as carrier transit time through the intrinsic region, on the frequency response of QW p–i–n structures.

Electronic band structure↗
NASA NTRS2022

Probing Dark Current Random Telegraph Signal in a Small Pitch Vertically Pinned Photodiode CMOS Image Sensor after Proton Irradiation

Dark Current degradation and Dark Current Ran- dom Telegraph Signal after proton irradiation are studied in new scale silicon microvolumes by using a commercial CMOS Image Sensor. Results show that previously reported empirical models describing the Displacement Damage induced degradations are still valid despite the 10 to 100 times smaller depletion volume used. In addition, no evidence of significant Total Ionizing Dose effects is observed. Finally the reduction of the fraction of Random Telegraph Signal (RTS) pixels detected and of the fraction of multi-level RTS pixels is directly linked to the reduction in pixel volume.

CMOS Image Sensor (CIS)↗