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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

CuInSe2/ZnSe solar cells using reactively sputter-deposited ZnSe

Results on CuInSe2/ZnSe thin-film heterojunction photovoltaic devices are presented. By the use of reactive magnetron cosputtering of Zn and In dopant in Ar/H2Se, ZnSe thin films have been deposited on glass and conducting SnO2-coated glass substrates with resistivity as low as 20 ohm-cm at deposition temperatures as low as 120 C. Preliminary ZnSe depositions onto CuInSe2 films supplied by industrial laboratories are encouraging. Reactive-sputter-deposition parameters for ZnSe have yet to be optimized for CuInSe2 substrates; however, open-circuit voltages as high as 430 mV were obtained. The highest short-circuit current density, as determined by spectral response weighted for AM1.5 global insulation, was 37.4 mA/sq cm. In all cases, a highly conductive ZnO film was overcoated onto the ZnSe to reduce the overall sheet resistance.

Nouhi, A.↗
NASA NTRS1988

InP homojunction solar cell performance on the LIPS 3 flight experiment

Performance data for the NASA Lewis Research Center indium phosphide n+p homojunction solar cell module on the LIPS 3 Flight Experiment is presented. The objective of the experiment is to measure the performance of InP cells in the natural radiation environment of the 1100 km altitude, 60+ deg inclination orbit. Analysis of flight data indicates that the performance of the four cells throughout the first year is near expected values. No degradation in short-circuit current was seen, as was expected from radiation tolerance studies of similar cells. Details of the cell structure and flight module design are discussed. The results of the temperature dependency and radiation tolerance studies necessary for normalization and analysis of the data are included.

Brinker, David J.↗
NASA NTRS1988

A V-grooved GaAs solar cell

V-grooved GaAs solar cells promise the benefits of improved optical coupling, higher short-circuit current, and increased tolerance to particle radiation compared to planar cells. A GaAs homojunction cell was fabricated by etching a V-groove pattern into an n epilayer (2.1 x 10 to the 17th power per cu cm) grown by metalorganic chemical vapor deposition (MOCVD) on an n+ substrate (2.8 x 10 to the 18th power per cu cm) and then depositing and MOCVD p epilayer (4.2 x 10 to the 18th power per cu cm). Reflectivity measurements on cells with and without an antireflective coating confirm the expected decrease in reluctance of the microgrooved cell compared to the planar structure. The short circuit current of the V-grooved solar cell was 13 percent higher than that of the planar control.

Bailey, S. G.↗
NASA NTRS1989

InP shallow-homojunction solar cells

Indium phosphide solar cells with very thin n-type emitters have been made by both ion implantation and metalorganic chemical vapor deposition. Air mass zero efficiencies as high as 18.8 percent (NASA measurement) have been achieved. Although calculations show that, as is the case with GaAs, a heterostructure is expected to be required for the highest efficiencies attainable, the material properties of InP give the shallow-homojunction structure a greater potential than in the case of GaAs. The best cells, which were those made by ion implantation, show open-circuit voltage (V sub oc) of 873 mV, short-circuit current of 357 A/sq m (35.7 mA/sq cm), and fill factor of 0.829. Improvements are anticipated in all three of these parameters. Internal quantum efficiency peaks at over 90 percent in the red end of the spectrum, but drops to 54 percent in the blue end. Other cells have achieved 74 percent in the blue end. Detailed modeling of the data indicates that a high front surface recombination velocity is responsible for the low blue response, that the carrier lifetime is high enough to allow good carrier collection from both the base and the emitter, and that the voltage is base-limited.

Keavney, Christopher↗
NASA NTRS1989

The GaAs solar cells with V-grooved emitters

Geometrically structured surfaces have become increasingly important to solar cell efficiency improvements and radiation tolerance. Gallium arsenide solar cells with a V-grooved front surface which demonstrate improved optical coupling and higher short-circuit current compared to planar cells were fabricated. GaAs homojunction cells were fabricated by organometallic chemical vapor deposition (OMCVD) on an n+ substrate. The V-grooves were formed on the surface with an anisotropic etch, and an n-type buffer and p-type emitter were grown by OMCVD, followed by ohmic contacts. Reflectivity measurements show significantly lower reflectance for the microgrooved cell compared to the planar structure. The short circuit current of the V-grooved solar cell is consistently higher than that of the planar controls.

Bailey, Sheila G.↗
NASA NTRS1989

On-orbit results of the LIPS 3/InP homojunction solar cell experiment

The flight performance of NASA Lewis Research Center's indium phosphide homojunction solar cell module on the LIPS 3 satellite is presented. A module of four n+p cells was fabricated and has been on-orbit on the LIPS 3 spacecraft since 1987. The experimental objective is the measurement of InP cell performance in the natural radiation environment of the 1100 kilometer altitude, 60 deg inclination, circular orbit. Flight data from the first year is near expected values, with no degradation in short-circuit current. The temperature dependence of current-voltage parameters is included along with the laboratory radiation tolerance studies necessary for normalization and analysis of the data. Details of the cell structure and flight module design are also discussed.

Brinker, David J.↗
NASA NTRS1989

Transient oxidation of single-crystal beta-NiAl

The transient oxidation of beta-NiAl in air at 800 C and 1100 C has been studied using electron microscopy. The oxide scale consists predominantly of metastable Al2O3 phases. Theta-Al2O3 is the major oxide phase within 10.0 hr of oxidation at 800 C and 0.1 hr at 1100 C. The scales form epitaxially on (001) sub beta and (012) sub beta specimens throughout the transient stage, whereas the degree of preferred oxide orientation decreases with oxidation time on (011) sub beta and (111) sub beta specimens. The orientation relationships reflect the small mismatch between parallel close-packed directions in the metal and in the cation sublattice of the oxides. The correlation of distinctive oxide surface morphologies with internal structural defects indicates the strong tendency of the Al2O3 scale to grow via short-circuit diffusion paths.

Doychak, J.↗
NASA NTRS1989

Effect of the theta-alpha-Al2O3 transformation on the oxidation behavior of beta-NiAl+Zr

Isothermal oxidation of NiAl+Zr has been performed over the temperature range of 800-1200 C and studied by TGA, XRD, and SEM. A discontinuous decrease in growth rate of two orders of magnitude was observed at 1000 C due to the formation of alpha-Al2O3 from theta-Al2O3. This transformation also resulted in a dramatic change in the surface morphology of the scales, as a whisker topography was changed into a weblike network of oxide ridges and radial transformation cracks. It is believed that the ridges are evidence for a short-circuit outward aluminum diffusion growth mechanism that has been documented in a number of O-18 tracer studies.

Rybicki, George C.↗
NASA NTRS1989

A design procedure for the phase-controlled parallel-loaded resonant inverter

High-frequency-link power conversion and distribution based on a resonant inverter (RI) has been recently proposed. The design of several topologies is reviewed, and a simple approximate design procedure is developed for the phase-controlled parallel-loaded RI. This design procedure seeks to ensure the benefits of resonant conversion and is verified by data from a laboratory 2.5 kVA, 20-kHz converter. A simple phasor analysis is introduced as a useful approximation for design purposes. The load is considered to be a linear impedance (or an ac current sink). The design procedure is verified using a 2.5-kVA 20-kHz RI. Also obtained are predictable worst-case ratings for each component of the resonant tank circuit and the inverter switches. For a given load VA requirement, below-resonance operation is found to result in a significantly lower tank VA requirement. Under transient conditions such as load short-circuit, a reversal of the expected commutation sequence is possible.

King, Roger J.↗
NASA NTRS1989

Cable coupling lightning transient qualification

Simulated lightning strike testing of instrumentation cabling on the redesigned solid rocket motor was performed. Testing consisted of subjecting the lightning evaluation test article to simulated lightning strikes and evaluating the effects of instrumentation cable transients on cables within the system tunnel. The maximum short-circuit current induced onto a United Space Boosters, Inc., operational flight cable within the systems tunnel was 92 A, and the maximum induced open-circuit voltage was 316 V. These levels were extrapolated to the worst-case (200 kA) condition of NASA specification NSTS 07636 and were also scaled to full-scale redesigned solid rocket motor dimensions. Testing showed that voltage coupling to cables within the systems tunnel can be reduced 40 to 90 dB and that current coupling to cables within the systems tunnel can be reduced 30 to 70 dB with the use of braided metallic sock shields around cables that are external to the systems tunnel. Testing also showed that current and voltage levels induced onto cables within the systems tunnel are partially dependant on the cables' relative locations within the systems tunnel. Results of current injections to the systems tunnel indicate that the dominant coupling mode on cables within the systems tunnel is not from instrumentation cables but from coupling through the systems tunnel cover seam apertures. It is recommended that methods of improving the electrical bonding between individual sections of the systems tunnel covers be evaluated. Further testing to better characterize redesigned solid rocket motor cable coupling effects as an aid in developing methods to reduce coupling levels, particularly with respect to cable placement within the systems tunnel, is also recommended.

Cook, M.↗
NASA NTRS1989

On-orbit results of the LIPS 3/InP homojunction solar cell experiment

The flight performance of the NASA indium phosphide homojunction cell module on the LIPS 3 satellite is presented. The experimental objectivewas to measure the InP cell performance in the natural radiation environment in a circular 1100 km altitude orbit inclined 60 degrees. Flight data for the first year is close to expected values. No degradation in the short-circuit current is seen. Details of cell structure and flight module design are discussed.

Brinker, David J.↗
NASA NTRS1988

Improvements in InP solar cells

Indium phosphide solar cells with very thin n-type emitters have been made by both ion implantation and metal-organic chemical vapor deposition. Air mass zero efficiencies as high as 18.8 percent (NASA measurement) have been achieved. The best cells, which were those made by ion implantation, show an open-circuit voltage of 873 mV, short-circuit current of 35.7 mA/sq cm, and fill factor of 0.829. Improvements are anticipated in all three of these parameters. Internal quantum efficiency peaks at over 90 percent in the red end of the spectrum, but drops to 54 percent in the blue end. Other cells have achieved 74 percent in the blue end. A preliminary investigation of InP solar cells on foreign substrates has been carried out. Although problems have been encountered with doping of the InP by the substrate, cells of 7.1 percent efficiency on silicon and cells of 9.4 percent, efficiency on GaAs have been made.

Keavney, Christopher↗
NASA NTRS1988

InP homojunction solar cell performance on the LIPS III flight experiment

Performance data for the NASA Lewis Research Center indium phosphide n+p homojunction solar cell module on the LIPS 3 flight experiment is presented. The objective of the experiment is to measure the performance of InP cells in the natural radiation environment of the 1100 km altitude, 60+ deg inclination orbit. Analysis of flight data indicates that the performance of the four cells throughout the first year is near expected values. No degradation in short-circuit current was seen, as was expected from radiation tolerance studies of similar cells. Details of the cell structure and flight module design are discussed. The results of the temperature dependency and radiation tolerance studies necessary for normalization and analysis of the data are included.

Brinker, David J.↗
NASA NTRS1988

Photon degradation of AlGaAs/GaAs solar cells

The behavior of GaAs solar cells after photon illumination for a prolonged exposure time is presented. More than 55 OMCVD AlGaAs/GaAs solar cells were exposed for over 400 h to AM0 photons at 28 C in three separate, well-controlled runs. Significant degradation of solar cell efficiency was observed in two out of three runs. Although noticeable losses in the open-circuit voltage, fill factor, and maximum power were observed, no change in the short-circuit current was found. In one of the runs, no change was seen in either the test cells or the control cells. Each cell in this run was protected with a coverglass. The cells in this run had thicker buffer layers and thinner window layers than the cells in the other two runs.

Anspaugh, Bruce↗
NASA NTRS1989

20 kHz main inverter unit

A proof-of-concept main inverter unit has demonstrated the operation of a pulse-width-modulated parallel resonant power stage topology as a 20-kHz ac power source driver, showing simple output regulation, parallel operation, power sharing and short-circuit operation. The use of a two-stage dc input filter controls the electromagnetic compatibility (EMC) characteristics of the dc power bus, and the use of an ac harmonic trap controls the EMC characteristics of the 20-kHz ac power bus.

Hussey, S.↗
NASA NTRS1991

V-Grooved GaAs Solar Cell

V-grooved GaAs solar photovoltaic cells increase optical coupling and greater conversion of light into electricity. Increases both trapping of incident light and lengths of optical paths in cell material. Net effect increases in total absorptivity, tolerance to damage by energetic particles, and short-circuit current. These improvements expected to follow from similar improvements obtained in silicon solar cells.

Bailey, S. G.↗
NASA NTRS1991

Testing interconnected VLSI circuits in the Big Viterbi Decoder

The Big Viterbi Decoder (BVD) is a powerful error-correcting hardware device for the Deep Space Network (DSN), in support of the Galileo and Comet Rendezvous Asteroid Flyby (CRAF)/Cassini Missions. Recently, a prototype was completed and run successfully at 400,000 or more decoded bits per second. This prototype is a complex digital system whose core arithmetic unit consists of 256 identical very large scale integration (VLSI) gate-array chips, 16 on each of 16 identical boards which are connected through a 28-layer, printed-circuit backplane using 4416 wires. Special techniques were developed for debugging, testing, and locating faults inside individual chips, on boards, and within the entire decoder. The methods are based upon hierarchical structure in the decoder, and require that chips or boards be wired themselves as Viterbi decoders. The basic procedure consists of sending a small set of known, very noisy channel symbols through a decoder, and matching observables against values computed by a software simulation. Also, tests were devised for finding open and short-circuited wires which connect VLSI chips on the boards and through the backplane.

Onyszchuk, I. M.↗
NASA NTRS1990

Temperature coefficients of multijunction solar cells

Temperature coefficients measured in solar simulators with those measured under AM0 solar illumination are compared to illustrate the challenges in making these measurements. It is shown that simulator measurements of the short-circuit current (delta Jsc/delta T) are inaccurate due to the mismatch between the solar spectrum and the simulators at the bandgaps of the solar cells. Especially susceptible to error is the delta Jsc/delta T of cells which are components in monolithic multijunction solar cells, such as GaAs filtered by 1.93-eV AlGaAs, which has an AM0 coefficient of 6.82 micro-A/sq cm/deg C, compared to a Xenon simulator coefficient of 22.2 micro-A/sq cm/deg C.

Virshup, G. F.↗