Search NASASearch

SEARCH · Search NASA

Results for “stack”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 181 records · Page 10

Linking Pressure to Electrochemical Evolution in Solid-State Conversion Cathode Composites

Conversion-type cathodes, such as sulfur, FeS 2 , and FeF 3 , offer high theoretical capacities in solid-state lithium batteries but are hindered by substantial volume changes during cycling, leading to interfacial contact loss, crack formation, and microstructural degradation. Here, we investigate the relationships between electrochemical, mechanical, and structural evolution in solid-state electrode composites with these three active materials. Using real-time stack-pressure monitoring, synchrotron X-ray absorption spectroscopy, and electrokinetic modeling, we elucidate how stress evolution is linked to reversible and irreversible redox reactions. Nonlinear stack pressure evolution in cells with sulfur, FeS 2 , and FeF 3 electrode composites is found to arise from material-specific volume changes, the balance of volume change between the working and counter electrode, and the formation of distinct reaction intermediates. The three materials exhibit distinct stack pressure evolution, which is closely related to the different reaction processes in the materials, as demonstrated with X-ray absorption spectroscopy measurements. Through mesoscale modeling, we relate the experimental measurements to species evolution at the particle scale and track the dynamic coexistence of intermediate phases. Our findings highlight the importance of designing for volume changes of a given active material in solid-state battery systems.

batteries

Electrochemical Control of the Ultrafast Lattice Response of a Layered Semimetal

The unique layer-stacking in two-dimensional (2D) van der Waals materials facilitates the formation of nearly degenerate phases of matter and opens novel routes for the design of low-power, reconfigurable functional materials. Electrochemical ion intercalation between stacked layers offers a promising approach to stabilize bulk metastable phases and to explore the effects of extreme carrier doping and strain. However, in situ characterization methods to study the structural evolution and dynamical functional properties of these intercalated materials remains limited. Here a novel experimental platform is presented capable of simultaneously performing electrochemical lithium-ion intercalation and multimodal ultrafast characterization of the lattice using both electron diffraction and nonlinear optical techniques. Using the layered semimetal WTe 2 as a model system, the interlayer shear phonon mode that modulates stacking between 2Dlayers is probed, showing that small amounts of lithiation enhance the amplitude and lifetime of the phonon, contrary to expectations. This results from the dynamically fluctuating and anharmonic structure between nearly degenerate phases at room temperature, which can be stabilized by electronic carriers accompanying the inserted lithium ions. At high lithiation, the T d ’ structure emerges and quenches the phonon response. This work defines new approaches for using electrochemistry to engineer the dynamic structure of 2D materials.

36 MATERIALS SCIENCE

Fast oxygen redox enabled by flexible Al–O bonds in P2-type layered oxides for sodium batteries

Sodium-ion batteries (SIBs) exhibit significant potential for large-scale energy storage systems due to the abundance and low cost of sodium resources. Triggering lattice oxygen redox (LOR) in P2-type transition metal oxides is considered a promising approach to enhance energy density in SIB cathodes, providing high operating potential and substantial capacity. However, irreversible phase transitions associated with LOR, particularly from prisms (P-type stacking) to octahedrons (O-type stacking), lead to severe structural distortions and sluggish Na + diffusion kinetics. In this work, an Al-substitution strategy is proposed to suppress the formation of O-type stacking and instead promote the formation of a beneficial Z phase. Furthermore, the flexible Al-O bonds accommodate asymmetric variations in their occupied states during the sodiation process, mitigating local structural distortions through Al-O bond contraction. Stabilization of the local structure ensures the maintenance of a robust Na + diffusion pathway. As a result, the Al-substituted cathode achieves a low Na + diffusion barrier of 0.47 eV and delivers a capacity of 86 mAh/g even at a high current density of 1 A/g within 1.5–4.5 V, maintaining 62.5% capacity retention over 100 cycles.

36 MATERIALS SCIENCE

Multiscale Characterization of Electrode-Induced Degradation in Perovskite Solar Cells

The stability of metal-halide-perovskite (MHP) solar cells must be understood and improved for the commercial viability of MHP technologies. Here, we apply multiscale characterization methods to study degradation modes, specifically electrode corrosion, for p-i-n MHP partial device stacks and full devices that are stored in the dark under an inert atmosphere. Our multiscale characterization approaches include full-device electro-optical performance using current-voltage (JV) curves and spatial imaging with electroluminescence (EL) and photoluminescence (PL). We further correlate interface properties using cross-sectional Kelvin probe force microscopy, which maps the nanoscale electric field properties, and electron microscopy, which demonstrates structural and chemical features. Devices stored as a full device stack degrade primarily by metal (Ag) electrode diffusion into the absorber, with formation of AgI byproducts and Ag accumulation near the indium tin oxide (ITO) contact. This causes decomposition of the perovskite absorber domains, loss of the potential drop at the electron transport layer (ETL)/perovskite interface near the metal contact, and increased equivalent resistance at the perovskite/hole transport layer (HTL) interface near the ITO contact. The devices stored without metal show a different degradation pathway dominated by corrosion of the ITO, creating voids at the ITO electrode surface with diffusion of In and Sn into the absorber. We conclude that metal electrode-induced degradation is the most severe degradation pathway under dark storage, but that ITO corrosion and absorber instability must also be mitigated. We further demonstrate mitigation of these degradation pathways by changes to the device stack, including a SnO x blocking layer at the ETL side and replacing ITO with FTO at the HTL side. These results provide a useful demonstration of specific dark degradation pathways at each electrode interface, as well as a unique multiscale example that links degradation of chemical, structural, and electrical interface properties to the full-device electro-optical characteristics.

14 SOLAR ENERGY

Pressure Heterogeneity and Material Utilization in Thin-Film Solid-State Cathodes

Intimate interfacial contact between the solid electrolyte and the cathode active material is critical for maximizing cathode utilization in solid-state batteries. However, volume changes during electrochemical cycling induce internal stresses that drive interfacial degradation, particularly under nonuniform stack pressure. In this study, we employ in situ energy-dispersive X-ray diffraction tomography to visualize and quantify reaction heterogeneities across a 3 mm-diameter solid-state cathode with a well-defined interface. Our results reveal that regions under a lower stack pressure exhibit reduced material utilization and reversibility, which negatively affect the high-pressure regions. Interfacial degradation further impedes lithium-ion transport and amplifies microscale reaction heterogeneity. These findings highlight the critical role of stack pressure distribution in governing interfacial stability and electrochemical performance, offering important design insights into practical solid-state battery systems.

36 MATERIALS SCIENCE

Alkali-Metal Interlocking of 2D V 4 O 10 Sheets Defines Discretized Interlayer Shear Relationships

Low-dimensional materials manifest structural anisotropy, quantum confinement, and tightly bound excitonic states, which make them attractive building blocks that can be assembled within three-dimensional laterally stitched heterostructures, stacked van der Waals solids, and complex moiré superlattices. Ion intercalation in the galleries between layered materials provides a means of modifying interlayer separation and coupling, but it is also known to drive the shearing of the layers. In this article, we explore the distinct ligand coordination environments afforded by vanadyl oxygens of singular [V 4 O 10 ] sheets and examine how the size, polarizability, and stoichiometry of Group I cations sandwiched between such layers determine the interlocking of the sheets in stacked structures. Based on the topochemical insertion of alkali-metal ions into the layered λ-V 2 O 5 , we identify seven types of guest ion coordination sites discretized into four distinct regimes of interlayer shear in units of half octahedral widths. The coordination preferences of intercalated cations govern how they interlock 2D [V 4 O 10 ] sheets and engender specific shear conformations. We present evidence that static and dynamic disorder in guest ion arrangement modulate the magnetic structure of the intercalated compounds based on electrostatic polarization, localization of charge and spin density, and lattice distortion. The results illustrate the use of topochemical ion insertion to modulate stacking relationships and magnetic transition characteristics.

36 MATERIALS SCIENCE

Ligand-induced self-assembly of twisted two-dimensional halide perovskites

Two-dimensional (2D) halide perovskites (HPs) exhibit intriguing optoelectronic functionalities. Conventionally, 2D HPs have been synthesized with linear and planar molecular spacers, resulting in nominal modifications of their optoelectronic properties. In contrast, lower-dimensional HPs (0D and 1D) have proved accommodating to the incorporation of bulky molecular spacers. Fundamental insights into the incorporation of bulky molecular spacers in 2D HP structures remains elusive. Here, in this study, by implementing a high-throughput autonomous exploration workflow, the crystallization behaviours of 2D HPs based on a bulky 3,3-diphenylpropylammonium (DPA) spacer are comprehensively explored. Counterintuitive to conventional HP chemistry, synthesis of 2D DPA 2 PbI 4 HPs is indeed feasible when the steric hindrance is mediated by minute incorporation of 3D HP precursors. Furthermore, a moiré superlattice is observed from the DPA 2 PbI 4 flakes, indicating the spontaneous formation of twisted stacks of 2D HPs.We hypothesize that the unconventional van der Waals surface of DPA 2 PbI 4 facilitates the self-assembly of the twisted stacks of 2D HPs. This work exemplifies how high-throughput experimentation can discover unconventional material systems in which the synthetic principle lies beyond conventional chemical intuition. Furthermore, these findings provide hints for how to chemically manipulate the twist stacking in 2D HPs, thus rendering a straightforward way for bespoke realization of functionalities in exotic materials systems via a bottom-up approach.

materials chemistry

Heavy boron doping effects on biaxially tensile strained germanium (>1.5%) investigated via structural characterization, effective lifetime assessment and atomistic modeling

Highly tensile strained germanium (ε-Ge) represents an essential material system for emerging electronic and photonics applications. Moreover, adjusting the doping levels to moderate or high concentrations can effectively tailor the properties of ε-Ge for specific applications. This article combines experimental characterization with a theoretical framework to examine the effects of heavy elemental boron (B) doping on pseudomorphic sub-50 nm ε-Ge. High resolution X-ray diffractometry is used to validate tensile strain levels of 1.53% and 1.68% in Ge epilayers, surpassing the indirect-to-direct band gap crossover point at ∼1.5% biaxial tensile strain. Cross-sectional transmission electron microscopy revealed visual evidence of stacking faults and surface roughening in 1.68% ε-Ge, although a coherent and abrupt Ge/III–V heterointerface is observed, devoid of interfacial misfit dislocations. Effective lifetime measurements demonstrated approximately twofold enhancement in 1.53% B-doped ε-Ge (N B ∼7 × 10 19 cm −3 ) compared to its unstrained B-doped counterpart, while no such improvement was observed in 1.68% B-doped ε-Ge. This lack of enhancement is attributed to the presence of stacking faults and surface roughness within the ε-Ge epilayer. Through density functional theory calculations, we independently demonstrate that substitutional B atoms induce local deformation of Ge–Ge bonds in both unstrained Ge and ε-Ge epilayers, resulting in an additive tensile strain. This phenomenon could potentially lead to dynamic reduction and overcoming of the critical layer thickness for the system, facilitating the nucleation and subsequent glide of 90° leading Shockley partial dislocations, thereby generating stacking faults. In essence, these findings establish an upper limit on the B-doping concentration that can be achieved in highly ε-Ge epilayers, and collectively, offer valuable insights into the significance of heavy doping in Ge-based heterostructures. As such, this study delineates a fundamental constraint for integrating heavily doped ε-Ge in high-performance optoelectronic systems, necessitating precise strain-doping co-optimization to avoid performance degradation.

77 NANOSCIENCE AND NANOTECHNOLOGY

Multiscale analysis of large twist ferroelectricity and swirling dislocations in bilayer hexagonal boron nitride

With its atomically thin structure and intrinsic ferroelectric properties, heterodeformed bilayer hexagonal boron nitride (hBN) has gained prominence in next-generation non-volatile memory applications. However, studies to date have focused almost exclusively on small-twist bilayer hBN, leaving the question of whether ferroelectricity can persist under small heterostrain and large heterodeformation entirely unexplored. In this work, we establish the crystallographic origin of ferroelectricity in bilayer hBN configurations heterodeformed relative to high-symmetry configurations such as AA-stacking and 21.786789° twisted configurations (Σ7), using Smith normal form bicrystallography. We then demonstrate out-of-plane ferroelectricity in bilayer hBN across configurations vicinal to both the AA and Σ7 stackings. Atomistic simulations reveal that AA-vicinal systems support ferroelectricity under both small twist and small strain, with polarization switching in the latter governed by the deformation of swirling dislocations rather than the straight interface dislocations seen in the former. For Σ7-vicinal systems, where existing interatomic potentials underperform particularly under extreme out-of-plane compression, we develop a density-functional-theory-informed continuum framework—the bicrystallography-informed frame-invariant multiscale (BFIM) model, which captures out-of-plane ferroelectricity in heterodeformed configurations vicinal to Σ7 stacking. Interface dislocations in these large heterodeformed bilayer configurations exhibit markedly smaller Burgers vectors compared to interface dislocations in small-twist and small-strain bilayer hBN. The BFIM model reproduces experimental results and provides a powerful, computationally efficient framework for predicting ferroelectricity in large-unit-cell heterostructures where atomistic simulations are prohibitively expensive.

Ahmed, Md Tusher [Univ. of Illinois at Urbana-Cham

Deterministic fabrication of graphene hexagonal boron nitride moiré superlattices

The electronic properties of moiré heterostructures depend sensitively on the relative orientation between layers of the stack. For example, near-magic-angle twisted bilayer graphene (TBG) commonly shows superconductivity, yet a TBG sample with one of the graphene layers rotationally aligned to a hexagonal Boron Nitride (hBN) cladding layer provided experimental observation of orbital ferromagnetism. To create samples with aligned graphene/hBN, researchers often align edges of exfoliated flakes that appear straight in optical micrographs. However, graphene or hBN can cleave along either zig-zag or armchair lattice directions, introducing a 30° ambiguity in the relative orientation of two flakes. By characterizing the crystal lattice orientation of exfoliated flakes prior to stacking using Raman and second-harmonic generation for graphene and hBN, respectively, we unambiguously align monolayer graphene to hBN at a near-0°, not 30°, relative twist angle. We confirm this alignment by torsional force microscopy of the graphene/hBN moiré on an open-face stack, and then by cryogenic transport measurements, after full encapsulation with a second, nonaligned hBN layer. This work demonstrates a key step toward systematically exploring the effects of the relative twist angle between dissimilar materials within moiré heterostructures.

boron nitride

Low-frequency Raman active modes of twisted bilayer MoS 2

Abstract We study the low-frequency Raman active modes of twisted bilayer MoS 2 for several twist angles using a force-field approach and a parametrized bond polarizability model. We show that twist angles near high-symmetry stacking configurations exhibit stacking frustration that leads to significant buckling of the moiré superlattice. We find that atomic relaxation due to the twist is of prime importance. The periodic displacement of the Mo atoms shows the realization of a soliton network, and in turn, leads to the emergence of a number of frequency modes not seen in the high-symmetry stacking systems. Some of the modes are only seen in the XZ Raman polarization setup while others are seen in the XY setup. The symmetry of the normal modes, and how this affects the Raman tensors is examined in detail.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND

Development of a high current density, high temperature superconducting cable for pulsed magnets

Abstract A low AC loss Rare Earth Barium Copper Oxide (REBCO) cable, based on the VIPER cable technology has been developed by Commonwealth Fusion Systems for use in high field, REBCO based tokamaks. The new cable is composed of partitioned and transposed copper ‘petals’ shaped to fit together in a circular pattern with each petal containing a REBCO tape stack and insulated from each other to reduce AC losses. A stainless steel jacket adds mechanical robustness—also serving as a vessel for solder impregnation—while a tube runs through the middle for cooling purposes. Additionally, fiber optic sensors are placed under the tape stacks for quench detection. To qualify this design, a series of experiments were conducted as part of the SPARC tokamak Central Solenoid Model Coil program—to retire the risks associated with full scale, fast ramping, high flux HTS Central Solenoid (CS) and Poloidal Field (PF) coils for tokamak fusion power plants and net energy demonstrators. These risk study and risk reduction experiments include (1) AC loss measurement and model validation in the range of ~5 T/s, (2) an IxB electromagnetic loading of over 850 kN/m at the cable level and up to 300 kN/m at the stack level, (3) a transverse compression resilience of over 350 MPa, (4) manufacturability at tokamak relevant speeds and scales, (5) cable to cable joint performance, (6) fiber optic based quench detection speed, accuracy, and feasibility, and (7) overall winding pack integration and magnet assembly. The result is a cable technology, now referred to as PIT VIPER, with AC losses that measure fifteen times lower (at ~5 T/s) than its predecessor technology; a 2% or lower degradation of critical current (Ic) at high IxB electromagnetic loads; no detectable Ic degradation up to 570 MPa of transverse compression on the cable unit cell; end to end magnet manufacturing, consistently producing Ic values within 7% of the model prediction; cable to cable joint resistances at 20 K on the order of ~15 nΩ; and fast, functional quench detection capabilities that do not involve voltage taps. This cable technology will be tested comprehensively in a Central Solenoid Model Coil to prove its readiness for compact, high field tokamak operation.

Sanabria, Charlie (ORCID:0000000150175309)

The Dark Energy Survey Supernova Program: slow supernovae show cosmological time dilation out to z ~ 1.

ABSTRACT We present a precise measurement of cosmological time dilation using the light curves of 1504 Type Ia supernovae from the Dark Energy Survey spanning a redshift range $0.1\lesssim z\lesssim 1.2$. We find that the width of supernova light curves is proportional to $(1+z)$, as expected for time dilation due to the expansion of the Universe. Assuming Type Ia supernovae light curves are emitted with a consistent duration $\Delta t_{\rm em}$, and parametrizing the observed duration as $\Delta t_{\rm obs}=\Delta t_{\rm em}(1+z)^b$, we fit for the form of time dilation using two methods. First, we find that a power of $b \approx 1$ minimizes the flux scatter in stacked subsamples of light curves across different redshifts. Secondly, we fit each target supernova to a stacked light curve (stacking all supernovae with observed bandpasses matching that of the target light curve) and find $b=1.003\pm 0.005$ (stat) $\pm \, 0.010$ (sys). Thanks to the large number of supernovae and large redshift-range of the sample, this analysis gives the most precise measurement of cosmological time dilation to date, ruling out any non-time-dilating cosmological models at very high significance.

79 ASTRONOMY AND ASTROPHYSICS

51 V NMR evidence for interlayer-modulated charge order and a first-order low-temperature transition in CsV 3 ⁢Sb 5

Charge order in the kagome superconductor CsV 3 ⁢Sb 5 exhibits a complex three-dimensional organization and intermediate-temperature anomalies whose bulk character has remained unsettled. We use orientation-dependent 51 V NMR as a site-selective probe to determine the stacking of the charge density wave (CDW) state and its thermal evolution. Below 𝑇 CDW ≈ 94K, the field-linear splitting of the 51 V central transition together with the anisotropy of the Knight shift tensor identify an interlayer-modulated 3⁢𝑞 CDW whose local environments are consistent with a four-layer 2 × 2 × 4 stacking with mixed trihexagonal/Star-of-David distortions, in agreement with synchrotron x-ray determinations. For comparison, RbV 3 ⁢Sb 5 serves as a reference exhibiting a uniform trihexagonal 2 × 2 × 2 stacking, allowing us to isolate features unique to the 2 × 2 × 4 state in CsV 3 ⁢Sb 5 . With 𝐻 0 ∥ 𝑐, the 51 V quadrupolar satellites through the intermediate temperature scale near 𝑇 CO ≈ 65K reorganize into two well-resolved electric-field-gradient manifolds that coexist over a finite interval; their relative spectral weights interchange on cooling while the total integrated satellite intensity remains conserved and 𝜈 𝑄 within each manifold is nearly temperature independent. The coexistence without critical broadening, together with conserved intensity, provides bulk evidence consistent with a first-order charge-order transition near 𝑇 CO . Our measurements do not resolve whether this lower-temperature transition corresponds to a distinct in-plane order or a reorganization of the 3⁢𝑞 state; rather, they delimit this window and provide bulk, site-resolved constraints that connect prior reported anomalies to a thermodynamic first-order transition.

Wang, Xiaoling [California State Univ., East Bay,

General trends of superconducting pairing and magnetic correlations in the Ruddlesden-Popper nickelate 𝑚-layered superconductors La 𝑚+1 ⁢Ni 𝑚 ⁢O 3⁢𝑚+1

Here, we report a comprehensive theoretical analysis of the Ruddlesden-Popper layered nickelates La 𝑚+1 ⁢Ni 𝑚 ⁢O 3⁢𝑚+1 (𝑚 = 1 to 6) under pressure. These materials have recently received significant attention due to the discovery of superconductivity in some nickelates under pressure. Our results suggest that, while these Ruddlesden-Popper layered nickelates display many similarities, they also show noticeable differences. One of the common features of La 𝑚+1 ⁢Ni 𝑚 ⁢O 3⁢𝑚+1 is that the electronic states near the Fermi level are mainly contributed by Ni 3⁢𝑑 orbitals, slightly hybridized with O 2⁢𝑝 orbitals. The Ni 𝑑 3⁢𝑧 2 −𝑟 2 orbitals display bonding-antibonding, or bonding-antibonding-nonbonding, characteristic splittings, depending on the even or odd number of stacking layers 𝑚. In addition, the ratio of the in-plane interorbital hopping between 𝑑 3⁢𝑧 2 −𝑟 2 and 𝑑 𝑥 2 −𝑦 2 orbitals and in-plane intraorbital hopping between 𝑑 𝑥 2 −𝑦 2 orbitals was found to be large in La 𝑚+1 ⁢Ni 𝑚 ⁢O 3⁢𝑚+1 (𝑚 = 1 to 6), and this ratio increases from 𝑚 = 1 to 𝑚 = 6, suggesting that the in-plane hybridization will increase as the layer number 𝑚 increases. In contrast to the dominant 𝑠 ± -wave state driven by spin fluctuations in the bilayer La 3 ⁢Ni 2⁢ O 7 and trilayer La 4 ⁢Ni 3 ⁢O 10 , two nearly degenerate 𝑑 𝑥 2 −𝑦 2 -wave and 𝑠 ± -wave leading states were obtained in the four-layer stacking La 5⁢ Ni 4 ⁢O 13 and five-layer stacking La 6 ⁢Ni 5 ⁢O 16 . The leading 𝑠 ± -wave state was recovered in the six-layer material La 7 ⁢Ni 6 ⁢O 19 with slightly higher calculated pairing strength 𝜆 than that of the 𝑑 𝑥 2 −𝑦 2 -wave state. All this evidence suggests that both 𝑠 ± -wave and 𝑑 𝑥 2 −𝑦 2 -wave channels are strongly competing in the high-order niceklates based on our random-phase approximation calculations. In general, at the level of the random-phase approximation treatment, the superconducting transition temperature 𝑇 𝑐 decreases in stoichiometric bulk systems from the bilayer La 3 ⁢Ni 2 ⁢O 7 to the six-layer La 7 ⁢Ni 6 ⁢O 19 , despite the 𝑚-dependent dominant pairing. Both in-plane and out-of-plane magnetic correlations are found to be quite complex. Within the in-plane direction, we obtained the peak of the magnetic susceptibility at 𝐪 = (0.6⁢𝜋, 0.6⁢𝜋) for La 5 ⁢Ni 4 ⁢O 13 (𝑚 = 4) and La 7 ⁢Ni 6 ⁢O 19 (𝑚 = 6) and at 𝐪 = (0.7⁢𝜋, 0.7⁢𝜋) for La 6⁢ Ni 5⁢ O 16 (𝑚 = 5). Along the out-of-plane direction, four layers are coupled as ↓−↑−↑−↓ in La 5 ⁢Ni 4⁢ O 13 , five layers are coupled as ↑−↑−↓−↑−↑ in La 6 ⁢Ni 5 ⁢O 16 , and six layers are coupled as ↑−↓−↓−↑−↑−↓ in La 7 ⁢Ni 6 ⁢O 19 .

Zhang, Yang [Univ. of Tennessee, Knoxville, TN (Un

String membrane nets from higher-form gauging: An alternate route to 𝑝-string condensation

We present a new perspective on the $p$-string condensation procedure for constructing 3+1D fracton phases by implementing this process via the gauging of higher-form symmetries. Specifically, we show that gauging a 1-form symmetry in 3+1D that is generated by Abelian anyons in isotropic stacks of 2+1D topological orders naturally results in a 3+1D $p$-string condensed phase, providing a controlled non-perturbative construction that realizes fracton orders. This approach clarifies the symmetry principles underlying $p$-string condensation and generalizes the familiar connection between anyon condensation and one-form gauging in two spatial dimensions. We demonstrate this correspondence explicitly in both field theories and lattice models: in field theory, we derive the foliated field theory description of the $\mathbb{Z}_N$ X-Cube model by gauging a higher-form symmetry in stacks of 2+1D $\mathbb{Z}_N$ gauge theories; on the lattice, we show how gauging a diagonal 1-form symmetry in isotropic stacks of $G$-graded string-net models leads to string-membrane-nets hosting restricted mobility excitations. This perspective naturally generalizes to spatial dimensions $d \geq 2$ and provides a step towards building an algebraic theory of $p$-string condensation.

Anyons

First Demonstration of Vertical 2T-nC FeRAM Hybrid Cell and its Scalability for High-Density 3D Ferroelectric Capacitor Memory

In this article, we perform a comprehensive experimental and modeling study into the scaling of vertical 2T-nC ferroelectric random-access memory (FeRAM) hybrid cell to demonstrate a high performance and high-density 3D capacitor memory. We demonstrate: i) first time successful integration of the vertical 2T-3C FeRAM cell by stacking the vertical metal-ferroelectricmetal (MFM) stack on top of Si CMOS transistors; ii) successful experimental operation of the memory cell, including the quasi-nondestructive read out (QNRO) of the polarization without write back after 106 read cycles; iii) the write bit line (WBL) heavily screens the coupling between neighboring strings, making it a minor concern; V ) aggressive stacking of the WBLs, i.e., number of MFMs in a string, could facilitate the self-boosting during write operation due to ferroelectric linear capacitance (CFE), which allows self-boosted inhibition for Vw/2 scheme and worsens the Vw/3 scheme as disturb increases to intolerable 2Vw/3; v) aggressive horizontal scaling significantly increases the read disturb to cells on neighboring planes due to capacitance between two WBLs (Cz).

42 ENGINEERING

Improving transition to IPv6-only via RFC8925 and IPv4 DNS Interventions

Nine years have passed since the American Registry for Internet Numbers exhausted its allocation of Internet Protocol version 4 (IPv4) addresses, and four years have passed since the United States Government mandated federal agencies to complete the transition to Internet Protocol version 6 (IPv6). Despite the IPv4 address shortage and IPv6 mandate, Federally Funded Research and Development Centers (FFRDCs) are still struggling to sunset IPv4. As demonstrated on SC23’s SC23v6 wireless network, newer tooling such as RFC8925 allows clients to disable their IPv4 protocol stack while retaining legacy IP connectivity via the RFC6145 translation algorithm. However, SC23v6 wireless clients without RFC8925 support or a disabled IPv6 stack would continue to receive internet access via legacy IPv4. This paper introduces a method of using poisoned IPv4 Domain Name System (DNS) records to gracefully inform IPv4-only clients at SC24’s SC24v6 wireless network about their inability to use the current version of internet protocol, with a goal of minimal impact to RFC8925 and dual-stack clients. When implemented as designed, this method may improve supportability and user experience of IPv6-only deployments at FFRDCs.

Costello, Thomas M