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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Thermal design and test results for SUNLITE ultra-stable reference cavity

SUNLITE (Stanford University-NASA Laser In-Space Technology Experiment) is a space-based experiment which uses a reference cavity to provide a stable frequency reference for a terahertz laser oscillator. Thermal stability of the cavity is a key factor in attaining a stable narrow-linewidth laser beam. The mount which is used to support and align the cavity will provide thermal isolation from the environment. The baseline requirement for thermal stability of the cavity is 0.025 C/min, but the design is directed toward achieving stability well beyond this requirement to improve the science data gained. A prototype of the cavity mount was fabricated and tested to characterize the thermal performance. The thermal vacuum test involved stable high-resolution temperature measurements and stable baseplate temperature control over long durations. Based on test data, the cavity mount design satisfies the severe requirement for the cavity thermal stability.

Amundsen, Ruth M.↗
NASA NTRS1992

Thermal analysis and test of SUNLITE reference cavity for laser frequency stabilization

SUNLITE is a space-based experiment which uses a reference cavity to provide a stable frequency reference for a terahertz laser oscillator. Thermal stability of the cavity is a key factor in attaining a stable narrow-linewidth laser beam. This paper describes the thermal stability requirements on the cavity design and detailed thermal analysis performed, as well as thermal testing that was performed on a prototype. Analytical thermal models were correlated to the test data and additional modeling of the current design is presented. Suggestions for improving similar high-precision thermal tests are given.

Amundsen, R. M.↗
NASA NTRS1992

Improvement in the control aspect of laser frequency stabilization for SUNLITE project

Flight Electronics Division of Langley Research Center is developing a spaceflight experiment called the Stanford University and NASA Laser In-Space Technology (SUNLITE). The objective of the project is to explore the fundamental limits on frequency stability using an FM laser locking technique on a Nd:YAG non-planar ring (free-running linewidth of 5 KHz) oscillator in the vibration free, microgravity environment of space. Compact and automated actively stabilized terahertz laser oscillators will operate in space with an expected linewidth of less than 3 Hz. To implement and verify this experiment, NASA engineers have designed and built a state of the art, space qualified high speed data acquisition system for measuring the linewidth and stability limits of a laser oscillator. In order to achieve greater stability and better performance, an active frequency control scheme requiring the use of a feedback control loop has been applied. In the summer of 1991, the application of control theory in active frequency control as a frequency stabilization technique was investigated. The results and findings were presented in 1992 at the American Control Conference in Chicago, and have been published in Conference Proceedings. The main focus was to seek further improvement in the overall performance of the system by replacing the analogue controller by a digital algorithm.

Zia, Omar↗
NASA NTRS1992

Silicon micromachined waveguides for millimeter and submillimeter wavelengths

The majority of radio receivers, transmitters, and components operating at millimeter and submillimeter wavelengths utilize rectangular waveguides in some form. However, conventional machining techniques for waveguides operating above a few hundred GHz are complicated and costly. This paper reports on the development of silicon micromachining techniques to create silicon-based waveguide circuits which can operate at millimeter and submillimeter wavelengths. As a first step, rectangular WR-10 waveguide structures have been fabricated from (110) silicon wafers using micromachining techniques. The waveguide is split along the broad wall. Each half is formed by first etching a channel completely through a wafer. Potassium hydroxide is used to etch smooth mirror-like vertical walls and LPCVD silicon nitride is used as a masking layer. This wafer is then bonded to another flat wafer using a polyimide bonding technique and diced into the U-shaped half wavelengths. Finally, a gold layer is applied to the waveguide walls. Insertion loss measurements show losses comparable to those of standard metal waveguides. It is suggested that active devices and planar circuits can be integrated with the waveguides, solving the traditional mounting problems. Potential applications in terahertz instrumentation technology are further discussed.

Yap, Markus↗
NASA NTRS1992

Transit-time devices as local oscillators for frequencies above 100 GHz

Very promising preliminary experimental results have been obtained from GaAs IMPATT diodes at F-band frequencies (75 mW, 3.5 percent at 111.1 GHz and 20 mW, 1.4 percent at 120.6 GHz) and from GaAs TUNNETT diodes at W-band frequencies (26 mW, 1.6 percent at 87.2 GHz and 32 mW, 2.6 percent at 93.5 GHz). These results indicate that IMPATT, MITATT and TUNNETT diodes have the highest potential of delivering significant amounts of power at Terahertz frequencies. As shown recently, the noise performance of GaAs W-band IMPATT diodes can compete with that of Gunn devices. Since TUNNETT diodes take advantage of the quieter tunnel injection, they are expected to be especially suited for low-noise local oscillators. This paper will focus on the two different design principles for IMPATT and TUNNETT diodes, the material parameters involved in the design and some aspects of the present device technology. Single-drift flat-profile GaAs D-band IMPATT diodes had oscillations up to 129 GHz with 9 mW, 0.9 percent at 128.4 GHz. Single-drift GaAs TUNNETT diodes had oscillations up to 112.5 GHz with 16 mW and output power levels up to 33 mW and efficiencies up to 3.4 percent around 102 GHz. These results are the best reported so far from GaAs IMPATT and TUNNETT diodes.

Eisele, H.↗
NASA NTRS1992

Simulation of electron transport in quantum well devices

Double barrier resonant tunneling diodes (DBRTD) have received much attention as possible terahertz devices. Despite impressive experimental results, the specifics of the device physics (i.e., how the electrons propagate through the structure) are only qualitatively understood. Therefore, better transport models are warranted if this technology is to mature. In this paper, the Lattice Wigner function is used to explain the important transport issues associated with DBRTD device behavior.

Miller, D. R.↗
NASA NTRS1992

Optically pumped submillimeter laser heterodyne receivers - Astrophysical observations and recent technical developments

NASA's prospective sub-mm-wave astrophysical missions encompass the Small Explorer Submillimeter Wave Astronomy Satellite, scheduled for launch in 1995, the Submillimeter Intermediate Mission, and the Large Deployable Reflector; until these are operational, sub-mm observations will be conducted at mountain sites and aboard aircraft platforms. Attention is presently given to the technical challenges faced by terahertz-range receiver developers, and it is noted that optically pumped sub-mm lasers furnish the only practical local oscillation source for heterodyne receivers in the 600-3000 GHz range. An account is given of ground-based and airborne astrophysical applications of heterodyne receivers.

Chin, Gordon↗
NASA NTRS1992

Frequency multipliers for millimeter and submillimeter wavelengths

All-solid-state local oscillators in the terahertz frequency range are especially needed for space-borne radio astronomy and remote sensing of the atmosphere. Because solid-state oscillators cannot yet produce the necessary local oscillator power at submillimeter wavelengths, frequency multipliers are needed. So far, submillimeter-wave frequency multipliers are mainly based on a whisker-contacted Schottky diode as the nonlinear element. This paper discusses the multiplier theory and tools for analysis and design of millimeter- and submillimeter-wave multipliers. Experimental work is reviewed. The Schottky diode model at submillimeter frequencies, use of Schottky multiplier chains versus direct higher-order multipliers, and the effect of cooling on Schottky diode multipliers are discussed. Alternative diodes such as the high electron mobility varactor, the barrier-intrinsic n(+) diode, the barrier-n-n(+) diode, the quantum well diode, and the single barrier varactor are discussed, with attention also given to their potential as submillimeter frequency multipliers.

Raisanen, Antti V.↗
NASA NTRS1992

Fourier Transform Fabry-Perot Interferometer

We are developing a compact, rugged, high-resolution remote sensing instrument with wide spectral scanning capabilities. This relatively new type of instrument, which we have chosen to call the Fourier-Transform Fabry-Perot Interferometer (FT-FPI), is accomplished by mechanically scanning the etalon plates of a Fabry-Perot interferometer (FPI) through a large optical distance while examining the concomitant signal with a Fourier-transform analysis technique similar to that employed by the Michelson interferometer. The FT-FPI will be used initially as a ground-based instrument to study near-infrared atmospheric absorption lines of trace gases using the techniques of solar absorption spectroscopy. Future plans include modifications to allow for measurements of trace gases in the stratosphere using spectral lines at terahertz frequencies.

Snell, Hilary E.↗
NASA NTRS1992

Progress toward ultra-stable lasers for use in space

This is a summary of a research project that has come to be known as SUNLITE, initially standing for Stanford University - NASA laser in space technology experiment. It involves scientists from the NASA Langley Research Center (LaRC), Stanford University, the National Institute of Standards and Technology (NIST), and the Joint Institute for Laboratory Astrophysics (JILA), and a growing number of other institutions. The long range objective of the SUNLITE effort is to examine the fundamental linewidth and frequency stability limits of an actively stabilized laser oscillator in the microgravity and vibration-free environment of space. The ground-based SUNLITE activities supporting that objective will develop a space-qualified, self-contained and completely automated terahertz oscillator stabilized to a linewidth of less than 3 Hz, along with a measurement system capable of determining laser linewidth to one part in 10(exp 16). The purpose of this paper is to discuss the critical technologies needed to place stabilized lasers in space and to describe the progress made by the SUNLITE project to develop these technologies.

Buoncristiani, A. M.↗
NASA NTRS1995

Optically-switched submillimeter-wave oscillator and radiator having a switch-to-switch propagation delay

A submillimeter wave-generating integrated circuit includes an array of N photoconductive switches biased across a common voltage source and an optical path difference from a common optical pulse of repetition rate f sub 0 providing a different optical delay to each of the switches. In one embodiment, each incoming pulse is applied to successive ones of the N switches with successive delays. The N switches are spaced apart with a suitable switch-to-switch spacing so as to generate at the output load or antenna radiation of a submillimeter wave frequency f on the order of N f sub 0. Preferably, the optical pulse has a repetition rate of at least 10 GHz and N is of the order of 100, so that the circuit generates radiation of frequency of the order of or greater than 1 Terahertz.

Spencer, Michael G.↗
NASA NTRS1995

Fundamental and subharmonic excitation for an oscillator with several tunneling diodes in series

Connecting several tunneling diodes in series shows promise as a method for increasing the output power of these devices as millimeter-wave oscillators. However, due to the negative differential resistance (NDR) region in the dc I-V curve of a single tunneling diode, a circuit using several devices connected in series, and biased simultaneously in the NDR region, is dc unstable. Because of this instability, an oscillator with several tunneling diodes in series has a demanding excitation condition. Excitation using an externally applied RF signal is one approach to solving this problem. This is experimentally demonstrated using an RF source, both with frequency close to as well as with frequency considerably lower than the oscillation frequency. Excitation by an RF (radio frequency) source with a frequency as low as one sixth of the oscillation frequency was demonstrated in a proof-of-principle experiment at 2 GHz, for an oscillator with two tunnel diodes connected in series. Strong harmonics of the oscillation signal were generated as a result of the highly nonlinear dc I-V curve of the tunnel diode and a large signal oscillator design. Third harmonic output power comparable to that of the fundamental was observed in one oscillator circuit. If submillimeter wave resonant-tunneling diodes (RTD's) are used instead of tunnel diodes, this harmonic output may be useful for generating signals at frequencies well into the terahertz range.

SUBHARMONIC EXCITATION↗
NASA NTRS1996

Materials For Improved Josephson-Junction Devices

Number of superconductive, normally conductive, and insulating materials proposed for use in fabricating improved superconductor/insulator/superconductor (SIS) and superconductor/normal conductor/superconductor (SNS) electronic devices capable of operation at frequencies up into terahertz range. Such devices particularly useful as electrically nonlinear circuit elements of mixers and local oscillators in heterodyne receivers.

Vasquez, Richard P.↗
NASA NTRS1999

Performance of a 2.5 THz Receiver Front-End for Spaceborne Applications

The OH radical plays a significant role in a great many of the known ozone destruction cycles, and has become the focus of an important radiometer development effort for NASA's Earth Observing System Chem I satellite, which will monitor and study many tropospheric and stratospheric gases and is scheduled for launch in 2002. Here we describe the design, fabrication, and testing of a receiver front end used to detect the OH signals at 2.5 THz. This is to be the first Terahertz heterodyne receiver to be flown in space. The challenges of producing the necessary high-performance mixers are numerous, but for this application, there is the added challenge of designing a robust receiver which can withstand the environmental extremes of a rocket launch and five years in space. The receiver front-end consists of the following components: a four-port dual-polarization diplexer, off-axis elliptical feed mirrors, mixers for horizontal and vertical polarization, support structures allowing simple and rugged alignment, low noise IF amplification from 7.7 to 21.1 GHz, and mixer DC bias circuitry. The front-end design, alignment, and operation will be covered in depth, followed by a discussion of the most recent results in receiver noise and dual-mode horn beam patterns. JPL MOMED mixers are employed, and have resulted in receiver noise temperatures of 14,500 K, DSB with LO frequency 2.522 GHz and IF of 12.8 GHz. Horn beam patterns correspond well with theory, with no significant sidelobes above the -25 dB level. Considering the high-quality beam of this receiver, these results are competitive with the best reported in the literature.

Gaidis, Michael C.↗
NASA NTRS1999

Modeling of THz Lasers Based on Intersubband Transitions in Semiconductor Quantum Wells

In semiconductor quantum well structures, the intersubband energy separation can be adjusted to the terahertz (THz) frequency range by changing the well width and material combinations. The electronic and optical properties of these nanostructures can also be controlled by an applied dc electric field. These unique features lead to a large frequency tunability of the quantum well devices. In the on-going project of modeling of the THz lasers, we investigate the possibility of using optical pumping to generate THz radiation based on intersubband transitions in semiconductor quantum wells. We choose the optical pumping because in the electric current injection it is difficult to realize population inversion in the THz frequency range due to the small intersubband separation (4-40 meV). We considered both small conduction band offset (GaAs/AlGaAs) and large band offset (InGaAs/AlAsSb) quantum well structures. For GaAs/AlGaAs quantum wells, mid-infrared C02 lasers are used as pumping sources. For InGaAs/AlAsSb quantum wells, the resonant intersubband transitions can be excited by the near-infrared diode lasers. For three- and four-subband quantum wells, we solve the pumpfield-induced nonequilibrium distribution function for each subband of the quantum well system from a set of rate equations that include both intrasubband and intersubband relaxation processes. Taking into account the coherent interactions between pump and THz (signal) waves, we calculate the optical gain for the THz field. The gain arising from population inversion and stimulated Raman processes is calculated in a unified manner. A graph shows the calculated THz gain spectra for three-subband GaAs/AlGaAs quantum wells. We see that the coherent pump and signal wave interactions contribute significantly to the gain. The pump intensity dependence of the THz gain is also studied. The calculated results are shown. Because of the optical Stark effect and pump-induced population redistribution, the maximum THz gain saturates at larger pump intensities.

Liu, Ansheng↗
NASA NTRS2000

Modeling of Optoelectronic Devices

Ultrafast modulation of semiconductor quantum well (QW) laser is of technological importance for information technology. Improvement by order(s) of magnitude in data transfer rate is possible as terahertz (THz) radiation is available for heating the laser at picosecond time scale. Optical gain modulation in the QW is achieved via temperature modulation of electron-hole plasma (EHP). Applications include free-space THz communication, optical switching, and pulse generation. The EHP in the semiconductor QW is described with a two-band model. Semiconductor Bloch equations with many-body effects are used to derive a hydrodynamical model for the active QW region. Because of ultrafast carrier-carrier scatterings in the order of 50 fs, EHP follows quasiequilibrium Fermi-Dirac distributions and THz field interacts incoherently with it. Carrier-longitudinal optical (LO) phonon scatterings and coherent laser-EHP interaction are treated microscopically in our physical model. A set of hydrodynamical equations for plasma density, temperature, and laser envelop amplitude are derived and Runge-Kutta method is adopted for numerical simulation. A typical 8 nm GaAs/Al(0.3)Ga(0.7) As single QW at 300 K is used. Additional information is contained in the original extended abstract.

Li, Jian-Zhong↗
NASA NTRS2001

Micromachined TWTs for THz Radiation Sources

The Terahertz (THz) region of the electromagnetic spectrum (about 300 - 3000 GHz in frequency or about 0.1 - 1 mm free space wavelength) has enormous potential for high-data-rate communications, spectroscopy, astronomy, space research, medicine, biology, surveillance, remote sensing, industrial process control, etc. It has been characterized as the most scientifically rich, yet under-utilized, region of the electromagnetic spectrum. The most critical roadblock to full exploitation of the THz band is lack of coherent radiation sources that are powerful (0.001 - 1.0 W continuous wave), efficient (> 1%), frequency agile (instantaneously tunable over 1% bandwidths or more), reliable, and comparatively inexpensive. To develop vacuum electron device (VED) radiation sources satisfying these requirements, fabrication and packaging approaches must be heavily considered to minimize costs, in addition to the basic interaction physics and circuit design. To minimize size of the prime power supply, beam voltage must be minimized, preferably 10 kV. Solid state sources satisfy the low voltage requirement, but are many orders of magnitude below power, efficiency, and bandwidth requirements. On the other hand, typical fast-wave VED sources in this regime (e.g., gyrotrons, FELs) tend to be large, expensive, high voltage and very high power devices unsuitable for most of the applications cited above. VEDs based on grating or inter-digital (ID) circuits have been researched and developed. However, achieving forward-wave amplifier operation with instantaneous fractional bandwidths > 1% is problematic for these devices with low-energy (< 15 kV) electron beams. Moreover, the interaction impedance is quite low unless the beam-circuit spacing is kept particularly narrow, often leading to significant beam interception. One solution to satisfy the THz source requirements mentioned above is to develop micromachined VEDs, or "micro-VEDs". Among other benefits, micro-machining technologies provide superior high frequency wall conductivity as a result of superior surface smoothness compared with conventional mechanical or electric discharge machining approaches. Micro-VED technologies are already being applied to the development of millimeter-wave klystrons at Stanford Linear Accelerator Center and submillimeter-wave klystrons at the University of Leeds. We are investigating the use of micro-machining technologies to develop THz regime TWTs, with emphasis on folded-waveguide TWTs. The folded-waveguide TWT (FW-TWT) has several features that make it attractive for THz-regime micro-VED applications. It is a relatively simple circuit to design and fabricate, it is amenable to precision pattern replication by micro-machining, and it is has been demonstrated capable of forward-wave amplification with appreciable bandwidth. We are conducting experimental and computational studies of micro-VED FW-TWTs to examine their feasibility for applications at frequencies from 200 - 1000 GHz.

Booske, John H.↗
NASA NTRS2001

InP MMIC Chip Set for Power Sources Covering 80-170 GHz

We will present a Monolithic Millimeter-wave Integrated Circuit (MMIC) chip set which provides high output-power sources for driving diode frequency multipliers into the terahertz range. The chip set was fabricated at HRL Laboratories using a 0.1-micrometer gate-length InAlAs/InGaAs/InP high electron mobility transistor (HEMT) process, and features transistors with an f(sub max) above 600 GHz. The HRL InP HEMT process has already demonstrated amplifiers in the 60-200 GHz range. In this paper, these high frequency HEMTs form the basis for power sources up to 170 GHz. A number of state-of-the-art InP HEMT MMICs will be presented. These include voltage-controlled and fixed-tuned oscillators, power amplifiers, and an active doubler. We will first discuss an 80 GHz voltage-controlled oscillator with 5 GHz of tunability and at least 17 mW of output power, as well as a 120 GHz oscillator providing 7 mW of output power. In addition, we will present results of a power amplifier which covers the full WRIO waveguide band (75-110 GHz), and provides 40-50 mW of output power. Furthermore, we will present an active doubler at 164 GHz providing 8% bandwidth, 3 mW of output power, and an unprecedented 2 dB of conversion loss for an InP HEMT MMIC at this frequency. Finally, we will demonstrate a power amplifier to cover 140-170 GHz with 15-25 mW of output power and 8 dB gain. These components can form a power source in the 155-165 GHz range by cascading the 80 GHz oscillator, W-band power amplifier, 164 GHz active doubler and final 140-170 GHz power amplifier for a stable, compact local oscillator subsystem, which could be used for atmospheric science or astrophysics radiometers.

Ngo, Catherine↗