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Results for “thin film circuits”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Revealing Micro-Scale Doping Variations in Thin-Films via Simultaneous Luminescence and Current Collection Measurements

Doping thin films used for photovoltaic absorbers is both critical to maximize device voltage and challenging due to complex interactions between point defects in these materials. Such interactions can result in compensation of the intended dopant species, meaning that the active charge-carrier concentration is lower than the concentration incorporated dopants. Charge-carrier compensation is directly related to the open-circuit voltage (VOC) deficit, or magnitude of VOC relative to the theoretical limit. Understanding how the carrier concentration varies within thin-films is necessary to design material processing schedules to minimize this VOC deficit and produce more efficient devices. Unfortunately, measurements of the free carrier concentration are generally relevant at the device level and cannot resolve local differences. Resolving local doping differences in thin-films such as Cd(Se,Te), CZTS, and CIGSe requires techniques with micron or sub-micron spatial resolution due to the polycrystalline structure as well as intended and unintended composition variations in these materials. In this contribution, we show how simultaneous measurement of cathodoluminescence (CL) and electron-beam-induced current (EBIC) can be used to expose doping variations in Cd(Se,Te) thin-films. Simultaneous collection of these signals reveals unexpected differences in the electric field strength through the device thickness due to spatial variation in the carrier concentration.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2023

Novel n-type Device Architectures to Achieve 1 Volt V OC in Thin Film CdTe cells

The main goal of this project was to develop a novel thin film CdTe solar cell architecture based on an n-type absorber, which can overcome performance limitations associated with the typical p-Cd(Se)Te state-of-the-art architecture. Even today, the performance of the Cd(Se)Te cell continues to be limited by its open- circuit voltage, which is directly related to the net doping of the absorber. (currently @ approx. 900 mV for CdTe/CST device configuration). The proposed polycrystalline thin- film solar cell architecture was based on n-type CdTe (and CdSeTe) absorbers to overcome this limitation, since n-type CdTe absorbers offer advantages over p-type: (i) n-type dopability in CdTe is higher (than p), enabling higher doping and therefore higher V OC (ii) using a wide bandgap material as the p-contact, the n-CdTe cell can become a “bi-facial” cell, with the potential to increase energy yield up to 25% depending on environmental and mounting conditions.

14 SOLAR ENERGY↗
NASA NTRS1972

Low-sensitivity, frequency-selective amplifier circuits for hybrid and bipolar fabrication.

A network is described which is suitable for realizing a low-sensitivity high-Q second-order frequency-selective amplifier for high-frequency operation. Circuits are obtained from this network which are well suited for realizing monolithic integrated circuits and which do not require any process steps more critical than those used for conventional monolithic operational and video amplifiers. A single chip version using compatible thin-film techniques for the frequency determination elements is then feasible. Center frequency and bandwidth can be set independently by trimming two resistors. The frequency selective circuits have a low sensitivity to the process variables, and the sensitivity of the center frequency and bandwidth to changes in temperature is very low.

Pi, C.↗
DOE OSTI2021

Bulk and Short-Circuit Anion Diffusion in Epitaxial Fe 2 O 3 Films Quantified Using Buried Isotopic Tracer Layers

Self-diffusion is a fundamental physical process that, in solid materials, is intimately correlated with both microstructure and functional properties. In this work, a universal approach is presented to precisely characterize self-diffusion in ionic solids by isotopically enriching anions and/or cations at specific locations within an epitaxial film stack, and characterize their redistribution at high spatial resolution with atom probe tomography. Nanoscale anion diffusivity is quantified in epitaxial α-Fe 2 O 3 thin films deposited by molecular beam epitaxy with a thin (10 nm) buried layer highly enriched in 18 O. The isotopic sensitivity of the atom probe allows precise measurement of 18 O distribution across the sharp interfaces between this layer and the surrounding Fe 2 O 3 after annealing. Short-circuit anion diffusion through 1D and 2D structural defects in Fe 2 O 3 are also directly visualized in 3D. This versatile approach to study precisely tailored thin film samples at high spatial and mass fidelity will facilitate a deeper understanding of atomic-scale diffusion phenomena.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Distinguishing bulk and surface recombination in CdTe thin films and solar cells using time-resolved terahertz and photoluminescence spectroscopies

Understanding the nature of recombination and its dependence on defects and interfaces is essential for engineering materials and contacts for higher open circuit voltage (V oc ) and power conversion efficiency in photovoltaic (PV) devices. Time-resolved photoluminescence (TRPL) has conventionally been used to evaluate recombination, but carrier redistribution often dominates the response at short times. In this work, we report on the quantification of carrier dynamics and recombination mechanisms by complementary use of both time-resolved terahertz spectroscopy (TRTS) and TRPL combined with numerical modeling of the continuity equations and Poisson’s equation. We have demonstrated this approach using CdTe thin films. A thin film stack with CdTe fabricated by vapor transport deposition and treated with CdCl 2 exhibited a bulk lifetime of 1.7 ± 0.1 ns, negligible CdTe/CdS interface recombination velocity, and back surface recombination velocity of 6.3 ± 1.3 x10 4 cm/s. In contrast, a film stack without CdCl 2 treatment had a bulk lifetime of only 68 ± 12 ps and a higher interface recombination velocity of 4 ± 2 x10 8 cm/s. By determining the locus and mechanisms of performance-limiting recombination, we can accelerate the development of thin-film PVs with higher V oc and efficiency. While the method has been demonstrated here using CdTe, it is also applicable to perovskites, Cu(InGa)Se 2 , Cu2ZnSn(S,Se) 4, and emerging technologies.

14 SOLAR ENERGY↗
NASA NTRS1999

Thin Film Ba(x)Sr(1-x)TiO3 Ku- and K-Band Phase Shifters Grown on MgO Substrates

We report measurements of gold circuits fabricated on four Ba(x)Sr(1-x)TiO3 films doped with 1% Mn grown on MgO substrates by laser ablation. Low frequency measurements of epsilon(sub r) and tan(delta) on interdigital capacitors are compared with high frequency measurements of phase shift and insertion loss on coupled microstrip phase shifters done on the same films. The variation in temperature of both high and low frequency device parameters is compared. Annealed and unannealed films are compared. Room temperature figures of merit of phase shift per insertion loss of up to 58.4 C/dB at 18 GHz and 400 V dc bias were measured.

VanKeuls, F. W.↗
NASA NTRS1994

High-Performance X-ray Detection in a New Analytical Electron Microscope

X-ray detection by energy-dispersive spectrometry in the analytical electron microscope (AEM) is often limited by low collected X-ray intensity (P), modest peak-to-background (P/B) ratios, and limitations on total counting time (tau) due to specimen drift and contamination. A new AFM has been designed with maximization of P. P/B, and tau as the primary considerations. Maximization of P has been accomplished by employing a field-emission electron gun, X-ray detectors with high collection angles, high-speed beam blanking to allow only one photon into the detector at a time, and simultaneous collection from two detectors. P/B has been maximized by reducing extraneous background signals generated at the specimen holder, the polepieces and the detector collimator. The maximum practical tau has been increased by reducing specimen contamination and employing electronic drift correction. Performance improvments have been measured using the NIST standard Cr thin film. The 0-3 steradian solid angle of X-ray collection is the highest value available. The beam blanking scheme for X-ray detection provides 3-4 times greater throughput of X-rays at high count rates into a recorded spectrum than normal systems employing pulse-pileup rejection circuits. Simultaneous X-ray collection from two detectors allows the highest X-ray intensity yet recorded to be collected from the NIST Cr thin film. The measured P/B of 6300 is the highest level recorded for an AEM. In addition to collected X-ray intensity (cps/nA) and P/B measured on the standard Cr film, the product of these can be used as a figure-of-merit to evaluate instruments. Estimated minimum mass fraction (MMF) for Cr measured on the standard NIST Cr thin film is also proposed as a figure-of-merit for comparing X-ray detection in AEMs. Determinations here of the MMF of Cr detectable show at least a threefold improvement over previous instruments.

Lyman, C. E.↗
NASA NTRS1975

Semiconductor electrolyte photovoltaic energy converter

Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

Anderson, W. W.↗
NASA NTRS2003

Characterizing Non-Uniformity of Performance of Thin-Film Solar Cells

Thin-film Solar Cells are being actively studied for terrestrial and space applications because of their potential to provide low-cost, lightweight, and flexible electric power system. Currently, thin-film solar cell performance is limited partially by the nonuniformity of performance that they typically exhibit. This nonuniformity of performance necessitates more detailed characterization techniques than the well-known macroscopic measurements such as current-voltage and efficiency. This project seeks to explore methods of characterization that take into account the spatial nonuniformity of thin-film solar cells. In this presentation we show results of electroluminescence images, short-circuit maps, and Kelvin Probe maps. All these mapping characterization and analysis tools show that the non-uniformities can correlated with device performance and efficiency.

Clark, Eric B.↗
NASA NTRS2011

Magnetic Penetration Effects in Small Superconducting Devices

The temperature dependent behavior of a superconducting body in an applied magnetic field involves flux penetration/expulsion both from screening currents (within a magnetic penetration depth) and variations in the superconducting order parameter (locally to form vortices or a mixed state, or globally in the Meissner effect). The temperature dependence of the magnetic penetration depth, in particular, has been used to make highly sensitive macroscopic thermometers. For the microscopic device volumes required in sensitive low temperature photon detectors, properties of actual thin film materials, non-uniformity of applied magnetic fields, and the influence of measurement circuit dynamics are complicating factors. We discuss the various penetration effects as demonstrated in a particularly promising combination of material and geometry that we have used to make sensitive x-ray microcalorimeters.

Stevenson, T. R.↗
DOE OSTI2023

Photothermally Activated Artificial Neuromorphic Synapses

Biological nervous systems rely on the coordination of billions of neurons with complex, dynamic connectivity to enable the ability to process information and form memories. In turn, artificial intelligence and neuromorphic computing platforms have sought to mimic biological cognition through software-based neural networks and hardware demonstrations utilizing memristive circuitry with fixed dynamics. Here, to incorporate the advantages of tunable dynamic software implementations of neural networks into hardware, we develop a proof-of-concept artificial synapse with adaptable resistivity. This synapse leverages the photothermally induced local phase transition of VO 2 thin films by temporally modulated laser pulses. Such a process quickly modifies the conductivity of the film site-selectively by a factor of 500 to “activate” these neurons and store “memory” by applying varying bias voltages to induce self-sustained Joule heating between electrodes after activation with a laser. These synapses are demonstrated to undergo a complete heating and cooling cycle in less than 120 ns.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2026

Self-aligned heterogeneous quantum photonic integration

Integrated quantum photonics holds significant promise for scalable photonic quantum information processing, quantum repeaters, and quantum networks, but its development is hindered by the mismatch between materials hosting high-quality quantum emitters and those compatible with mature photonic technologies. Heterogeneous integration offers a potential solution to this challenge, yet practical implementations have been limited by inevitable insertion losses at material interfaces. Here, we present a self-aligned heterogeneous quantum photonic integration approach that enables near-unity coupling efficiency at the interface. To showcase our approach, we demonstrate Purcell enhancement of a silicon vacancy (SiV) center in diamond induced by a heterogeneous photonic crystal cavity defined by titanium dioxide (TiO 2 ), as well as optical spin control and readout via a TiO 2 photonic circuit. We further show that, when combined with inverse photonic design, our approach enables efficient and broadband collection of single photons from a color center into a heterogeneous waveguide. Our approach is not restricted to SiV centers or TiO 2 ; it has the potential to be broadly applied to integrate diverse solid-state quantum emitters with thin-film photonic devices where conformal deposition is possible. Together, these results establish a practical route to scalable quantum photonic integrated circuits that combine high-quality quantum emitters with technologically mature photonic platforms.

36 MATERIALS SCIENCE↗
NASA NTRS1975

Advances in superconducting quantum electronic microcircuit fabrication

Standard microelectronic fabrication techniques have been utilized to produce batch quantities of superconducting quantum electronic devices and circuits. The overall goal is a fabrication technology yielding circuits that are rugged and stable and capable of being fabricated controllably and reproducibly in sizeable quantities. Our progress toward this goal is presented, with primary emphasis on the most recent work, which includes the use of electron-beam lithography and techniques of hybrid microelectronics. Several prototype microcircuits have been successfully fabricated. These microcircuits are formed in a thin-film parent material consisting of layers of superconducting and normal metals, and use proximity-effect structures as the active circuit elements.

Kirschman, R. K.↗
NASA NTRS1982

Study of the photovoltaic effect in thin film barium titanate

The basic mechanism associated with the photovoltaic phenomena observed in the R.F. sputtered BaTiO3/silicon system is presented. Series of measurements of short circuit photocurrents and open circuit photovoltage were made. The composition depth profiles and the interface characteristics of the BaTiO3/silicon system were investigated for a better understanding of the electronic properties. A Scanning Auger Microprobe combined with ion in depth profiling were used.

Grannemann, W. W.↗
NASA NTRS1984

Recent developments in semiconductor research

Recent findings drawn from various laboratories focused toward a new understanding of the nature of crystal growth and how impurities are incorporated or excluded from the lattice were considered. From these findings a heuristic approach is given for improving the uniformity and charge carrier concentration of thin semiconductor films. Such improvement is considered essential to achieve respectable yield on large scale integrated circuits. A tentative conclusion is drawn which indicates that if the host compound crystal reactants are provided to the growing crystal surface in a reasonably stoichiometric manner, it is virtually impossible to include impurities into a growing crystal surface held at a sufficiently low temperature; impurities are incorporated into the crystal by gettering action of crystal defects located one and two monlayers beneath the growing surface. Devices in 3-5 semiconductors based on heterojunctions and two dimensional electron gases are noted and reliability concerns are voiced. Alternatives and novel device structures such as truly single crystal high quality silicon on insulator and beta silicon carbide devices are presented.

Yoder, M. N.↗
NASA NTRS2006

Wholly Aromatic Ether-Imides as n-Type Semiconductors

Some wholly aromatic ether-imides consisting of rod-shaped, relatively-low-mass molecules that can form liquid crystals have been investigated for potential utility as electron-donor-type (ntype) organic semiconductors. It is envisioned that after further research to improve understanding of their physical and chemical properties, compounds of this type would be used to make thin film semiconductor devices (e.g., photovoltaic cells and field-effect transistors) on flexible electronic-circuit substrates. This investigation was inspired by several prior developments: Poly(ether-imides) [PEIs] are a class of engineering plastics that have been used extensively in the form of films in a variety of electronic applications, including insulating layers, circuit boards, and low-permittivity coatings. Wholly aromatic PEIs containing naphthalene and perylene moieties have been shown to be useful as electrochromic polymers. More recently, low-molecular-weight imides comprising naphthalene-based molecules with terminal fluorinated tails were shown to be useful as n-type organic semiconductors in such devices as field-effect transistors and Schottky diodes. Poly(etherimide)s as structural resins have been extensively investigated at NASA Langley Research Center for over 30 years. More recently, the need for multi-functional materials has become increasingly important. This n-type semiconductor illustrates the scope of current work towards new families of PEIs that not only can be used as structural resins for carbon-fiber reinforced composites, but also can function as sensors. Such a multi-functional material would permit so-called in-situ health monitoring of composite structures during service. The work presented here demonstrates that parts of the PEI backbone can be used as an n-type semiconductor with such materials being sensitive to damage, temperature, stress, and pressure. In the near future, multi-functional or "smart" composite structures are envisioned to be able to communicate such important parameters to the flight crew and provide vital information with respect to the operational status of their aircraft.

Weiser, Erik↗
NASA NTRS2012

Infrared Dielectric Properties of Low-stress Silicon Nitride

Silicon nitride thin films play an important role in the realization of sensors, filters, and high-performance circuits. Estimates of the dielectric function in the far- and mid-IR regime are derived from the observed transmittance spectra for a commonly employed low-stress silicon nitride formulation. The experimental, modeling, and numerical methods used to extract the dielectric parameters with an accuracy of approximately 4% are presented.

dielectric parameters↗
DOE OSTI2020

Close-Space Sublimation-Deposited Ultra-Thin CdSeTe/CdTe Solar Cells for Enhanced Short-Circuit Current Density and Photoluminescence

This work describes the complete fabrication process of thin-absorber cadmium selenium telluride/cadmium telluride photovoltaic devices for enhanced efficiency. Here, the process utilizes an automated in-line vacuum system for close-space sublimation deposition which is scalable from fabrication of small area research devices to large-scale modules.

14 SOLAR ENERGY↗