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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Forward-bias tunneling - A limitation to bipolar device scaling

Forward-bias tunneling is observed in heavily doped p-n junctions of bipolar transistors. A simple phenomenological model suitable to incorporation in device codes is developed. The model identifies as key parameters the space-charge-region (SCR) thickness at zero bias and the reduced doping level at its edges which can both be obtained from CV characteristics. This tunneling mechanism may limit the maximum gain achievable from scaled bipolar devices.

Del Alamo, Jesus A.↗
NASA NTRS1998

Electronic Properties of Carbon Nanotubes and Junctions

Metallic and semiconducting Single Wall Carbon Nanotubes (CNT) have recently been characterized using scanning tunneling microscopy (STM) and the manipulation of individual CNT has been demonstrated. These developments make the prospect of using CNT as molecular wires and possibly as electronic devices an even more interesting one. We have been modeling various electronic properties such as the density of states and the transmission coefficient of CNT wires and junctions. These studies involve first calculating the stability of junctions using molecular dynamics simulations and then calculating the electronic properties using a pi-electron tight binding Hamiltonian. We have developed the expertise to calculate the electronic properties of both finite-sized CNT and CNT systems with semi-infinite boundary conditions. In this poster, we will present an overview of some of our results. The electronic application of CNT that is most promising at this time is their use as molecular wires. The conductance can however be greatly reduced because of reflection due to defects and contacts. We have modeled the transmission through CNT in the presence of two types of defects: weak uniform disorder and strong isolated scatterers. We find that the conductance is affected in significantly different manners due to these defects Junctions of CNT have also been imaged using STM. This makes it essential to derive rules for the formation of junctions between tubes of different chirality, study their relative energies and electronic properties. We have generalized the rules for connecting two different CNT and have calculated the transmission and density of states through CNT junctions. Metallic and semiconducting CNT can be joined to form a stable junction and their current versus voltage characteristics are asymmetric. CNT are deformed by the application of external forces including interactions with a substrate or other CNT. In many experiments, these deformation are expected to occur naturally. We will present some preliminary results of our calculations of the modification of CNT electronic properties as a result of deformations.

Anantram, M. P.↗
NASA NTRS2001

Metallic Electrode: Semiconducting Nanotube Junction Model

A model is proposed for two observed current-voltage (I-V) patterns in an experiment with a scanning tunneling microscope tip and a carbon nanotube [Collins et al., Science 278, 100 ('97)]. We claim that there are two contact modes for a tip (metal) -nanotube semi conductor) junction depending whether the alignment of the metal and semiconductor band structure is (1) variable (vacuum-gap) or (2) fixed (touching) with V. With the tip grounded, the tunneling case in (1) would produce large dI/dV with V > 0, small dI/dV with V < 0, and I = 0 near V = 0 for an either n- or p-nanotube. However, the Schottky mechanism in (2) would result in forward current with V < 0 for an n-nanotube, while with V > 0 for an p-nanotube. The two observed I-V patterns are thus entirely explained by a tip-nanotube contact of the two types, where the nanotube must be n-type. We apply this picture to the source-drain I-V characteristics in a long nanotube-channel field-effect-transistor (Zhou et al., Appl. Phys. Lett. 76, 1597 ('00)], and show that two independent metal-semiconductor junctions connected in series are responsible for the observed behavior.

Yamada, Toshishige↗
NASA NTRS2000

Modeling of Electronic Transport in Scanning Tunneling Microscope Tip-Carbon Nanotube Systems

A model is proposed for two observed current-voltage (I-V) patterns in a recent experiment with a scanning tunneling microscope tip and a carbon nanotube. We claim that there are two mechanical contact modes for a tip (metal) -nanotube (semiconductor) junction (1) with or (2) without a tiny vacuum gap (0.1 - 0.2 nm). With the tip grounded, the tunneling case in (1) would produce large dI/dV with V > 0, small dI/dV with V < 0, and I = 0 near V = 0 for an either n- or p-nanotube; the Schottky mechanism in (2) would result in I does not equal 0 only with V < 0 for an n-nanotube, and the bias polarities would be reversed for a p-nanotube. The two observed I-V patterns are thus entirely explained by a tip-nanotube contact of the two types, where the nanotube must be n-type.

Yamada, Toshishige↗
NASA NTRS1975

Developments in convective heat transfer models featuring seamless and selected detail surfaces, employing electroless plating

Several model/instrument concepts employing electroless metallic skin were considered for improvement of surface condition, accuracy, and cost of contoured-geometry convective heat transfer models. A plated semi-infinite slab approach was chosen for development and evaluation in a hypersonic wind tunnel. The plated slab model consists of an epoxy casting containing fine constantan wires accurately placed at specified surface locations. An electroless alloy was deposited on the plastic surface that provides a hard, uniformly thick, seamless skin. The chosen alloy forms a high-output thermocouple junction with each exposed constantan wire, providing means of determining heat transfer during tunnel testing of the model. A selective electroless plating procedure was used to deposit scaled heatshield tiles on the lower surface of a 0.0175-scale shuttle orbiter model. Twenty-five percent of the tiles were randomly selected and plated to a height of 0.001-inch. The purpose was to assess the heating effects of surface roughness simulating misalignment of tiles that may occur during manufacture of the spacecraft.

Stalmach, C. J., Jr.↗
NASA NTRS1986

Room-Temperature Deposition of NbN Superconducting Films

Films with high superconducting transition temperatures deposited by reactive magnetron sputtering. Since deposition process does not involve significantly high substrate temperatures, employed to deposit counter electrode in superconductor/insulator/superconductor junction without causing any thermal or mechanical degradation of underlying delicate tunneling barrier. Substrates for room-temperature deposition of NbN polymeric or coated with photoresist, making films accessible to conventional lithographic patterning techniques. Further refinements in deposition technique yield films with smaller transition widths, Tc of which might approach predicted value of 18 K.

Thakoor, S.↗
NASA NTRS1980

Processing dependence of metal/tunnel-oxide/silicon junctions

The effects of process variations on the fixed-charge density, interface-state density, and tunneling properties of tunnel oxides on (100) silicon are discussed. Annealing the oxide in nitrogen reduces the fixed-charge and interface-state densities substantially, but also causes a marked increase in oxide capacitance. Anneals in forming gas before metallization alter the interface-state distribution and decrease the insulating qualities of the tunneling oxides. Postmetallization anneals in forming gas reduce the interface-state density to 1 x 10 to the 11th e/sq cm V or below, and appear not to affect the current through the oxide. No evidence for metal-induced interface states is observed.

Dressendorfer, P. V.↗
NASA NTRS1980

Experimental and theoretical investigations of the quality factor for N/+/P silicon solar cells

Many N(+)P silicon solar cells made with silicon from different growth techniques have current-voltage relations of the form: I = I(0) (exp(qV/AkT) - 1), where the quality factor A is nonintegral, is greater than 1, and shows a temperature dependence. The dark forward characteristics of such cells have been measured over a range of temperatures and the behavior of the factor A derived from them. Lack of agreement with previous models has led to the development of a new model, in which N(+) conduction electrons tunnel to deep levels near that side, these levels being due to junction contamination by impurities. Electron recombination then occurs with holes thermally assisted into the junction from the P side. This mechanism involves increased I(0) values over those for diffusion diode processes and thus reduces the cell power conversion efficiency.

Garlick, G. F. J.↗
NASA NTRS2005

Electronic Transport through Self Assembled Thiol Molecules: Effect of Monolayer Order, Dynamics and Temperature

We present the charge transport and tunneling conductance of self assembled organic thiol molecules and discuss the influence of order and dynamics in the monolayer on the transport behavior and the effect of temperature. Conjugated thiol molecular wires and organometals such as terpyridine metal complexes provide a new platform for molecular electronic devices and we study their self assembly on Au(111) substrates by the scanning tunneling microscope. Determining the organization of the molecule and the ability to control the nature of its interface with the substrate is important for reliable performance of the molecular electronic devices. By concurrent scanning tunneling microscopy and spectroscopy studies on SAMs formed from oligo (phenelyne ethynelyne) monolayers with and without molecular order, we show that packing and order determine the response of a self assembled monolayer (SAM) to competing interactions. Molecular resolution STM imaging in vacuum shows that the OPES adopt an imcommensurate SAM structure on Au(111) with a rectangular unit cell. Tunneling spectroscopic measurements were performed on the SAM as a function of junction resistance. STS results show that the I-Vs are non linear and asymmetric due to the inherent asymmetry in the molecular structure, with larger currents at negative sample biases. The asymmetry increases with increasing junction resistance due to the asymmetry in the coupling to the leads. This is brought out clearly in the differential conductance, which also shows a gap at the Fermi level. We also studied the effect of order and dynamics in the monolayer on the charge transport and found that competing forces between the electric field, intermolecular interactions, tip-molecule physisorption and substrate-molecule chemisorption impact the transport measurements and its reliability and that the presence of molecular order is very important for reproducible transport measurements. Thus while developing new electronic platforms based on molecules, it is important to have a good control of the molecule-substrate interface, for the devices to perform reliably. While such a control would minimize fluctuations and dynamics in the ensemble, the real challenge is to develop device architectures that are tolerant to fluctuations, since they cannot be totally eliminated in these low dimensional soft systems. Results of temperature dependent STS measurements will also be discussed.

Dholakia, Geetha↗
NASA NTRS2019

Update on the Juncture Flow PIV Results and Future Plans

A novel, embedded, 2D Particle Image Velocimetry system has been developed and implemented to obtain off-body velocity measurements in the junction of an 8% wing-body configuration in the NASA Langley Research Center 14- by 22-Foot Subsonic Tunnel. Although the initial purpose for implementing the system during this test was to evaluate system performance and identify potential risks, a considerable amount of data were obtained in the wing-fuselage junction near the trailing edge at a Reynolds Number of 2.4 Million and angle of attack of 5 degrees. In addition to providing notable efficiencies with regard to image acquisition and test operations, the PIV system captured unique details of the flow separation to complement the extensive suite of measurement techniques applied during the test. Instantaneous PIV vector fields reveal that the flow separation is not stationary but rather highly dynamic. Mean flow statistics calculated from the PIV measurements highlight where reverse flow and Reynolds stresses are concentrated in the separated region and agree well with results from the embedded Laser Doppler Velocimeter system and Computational Fluid Dynamics. The comparisons and ional insight gained during this effort will help guide system improvements for the upcoming entry in 2020.

Jenkins, Luther N.↗
NASA NTRS2019

Flow-Field Measurements in a Wing-Fuselage Junction Using an Embedded Particle Image Velocimetry System

A novel, embedded, 2D Particle Image Velocimetry system has been developed and implemented to obtain off-body velocity measurements in the junction of an 8% wing-body configuration in the NASA Langley Research Center 14- by 22-Foot Subsonic Tunnel. Although the initial purpose for implementing the system during this test was to evaluate system performance and identify potential risks, the system worked remarkably well and a considerable amount of data were obtained in the wing-fuselage junction near the trailing edge at a Reynolds Number of 2.4 Million and angle of attack of 5 degrees. In addition to providing notable efficiencies with regard to image acquisition and test operations, the PIV system proved to be quite capable of capturing unique details of the flow separation to complement the extensive suite of measurement techniques applied during the test. Instantaneous PIV vector fields reveal that the flow separation is not stationary but rather highly dynamic. Mean flow statistics calculated from the PIV measurements highlight where reverse flow and Reynolds stresses are concentrated in the separated region and agree well with results from the embedded Laser Doppler Velocimeter system and Computational Fluid Dynamics. The comparisons and additional insight gained during this effort will help guide system improvements for follow-on tests.

Jenkins, Luther N.↗
NASA NTRS2006

Techniques for Connecting Superconducting Thin Films

Several improved techniques for connecting superconducting thin films on substrates have been developed. The techniques afford some versatility for tailoring the electronic and mechanical characteristics of junctions between superconductors in experimental electronic devices. The techniques are particularly useful for making superconducting or alternatively normally conductive junctions (e.g., Josephson junctions) between patterned superconducting thin films in order to exploit electron quantum-tunneling effects. The techniques are applicable to both low-Tc and high-Tc superconductors (where Tc represents the superconducting- transition temperature of a given material), offering different advantages for each. Most low-Tc superconductors are metallic, and heretofore, connections among them have been made by spot welding. Most high-Tc superconductors are nonmetallic and cannot be spot welded. These techniques offer alternatives to spot welding of most low-Tc superconductors and additional solutions to problems of connecting most high-Tc superconductors.

Mester, John↗
NASA NTRS2017

Recent Advancements in the Infrared Flow Visualization System for the NASA Ames Unitary Plan Wind Tunnels

The following details recent efforts undertaken at the NASA Ames Unitary Plan wind tunnels to design and deploy an advanced, production-level infrared (IR) flow visualization data system. Highly sensitive IR cameras, coupled with in-line image processing, have enabled the visualization of wind tunnel model surface flow features as they develop in real-time. Boundary layer transition, shock impingement, junction flow, vortex dynamics, and buffet are routinely observed in both transonic and supersonic flow regimes all without the need of dedicated ramps in test section total temperature. Successful measurements have been performed on wing-body sting mounted test articles, semi-span floor mounted aircraft models, and sting mounted launch vehicle configurations. The unique requirements of imaging in production wind tunnel testing has led to advancements in the deployment of advanced IR cameras in a harsh test environment, robust data acquisition storage and workflow, real-time image processing algorithms, and evaluation of optimal surface treatments. The addition of a multi-camera IR flow visualization data system to the Ames UPWT has demonstrated itself to be a valuable analyses tool in the study of new and old aircraft/launch vehicle aerodynamics and has provided new insight for the evaluation of computational techniques.

Infrared Thermography↗
NASA NTRS1973

A thin polymer insulator for Josephson tunneling applications

The use of an organic monolayer formed from a vapor as an insulating barrier for thin film Josephson junctions is considered, and the effect of an organic monolayer on the transition temperature of a thin film superconductor is investigated. Also analyzed are the geometric factors which influence Josephson junctions and Josephson junction interferometers.

Wilmsen, C. M.↗