In situ investigation of conducting interface formation in $\mathrm{LaAlO_3}$/$\mathrm{SrTiO_3}$ heterostructure
The high-mobility conducting interface (CI) between LaAlO 3 (LAO) and SrTiO 3 (STO) has revealed many fascinating phenomena, including exotic magnetism and superconductivity. But, the formation mechanism of the CI has not been conclusively explained. Here, using in situ angle-resolved photoemission spectroscopy, we elucidated the mechanisms for the CI formation. In as-grown samples, we observed a built-in potential (V bi ) proportional to the polar LAO thickness starting from the first unit cell (UC) with CI formation appearing above 3 UCs. However, we found that the V bi is removed by synchrotron ultraviolet (UV)-irradiation; The built-in potential is recovered by oxygen gas (O 2 (g))-exposure. Furthermore, after UV-irradiation, the CI appears even below 3UC of LAO. Here, our results demonstrate not only the V bi -driven CI formation in as-grown LAO/STO, but also a new route to control of the interface state by UV lithographic patterning or other surface modification.