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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Embedded, Real-Time, and Distributed Traveling Wave Fault Location Method Using Graph Convolutional Neural Networks

This work proposes and develops an implementation of a fault location method to provide a fast and resilient protection scheme for power distribution systems. The method analyzes the transient dynamics of traveling waves (TWs) to generate features using the discrete wavelet transform (DWT), which are then used to train several graph convolutional network (GCN) models. Faults are simulated in the IEEE 34-node system, which is divided into three protection zones (PZs). The goal is to identify the PZ in which the fault occurs. The GCN models create a distributed protection scheme, as all nodes are able to retrieve a prediction. Given that message-passing between nodes occurs both during training and in the execution of the model, the resiliency of such schemes to communication losses was analyzed and demonstrated. One of the models, which only uses voltage measurements, was implemented on a Texas Instruments F28379D development board. The execution times were monitored to assess the speed of the protection scheme. It is shown that the proposed method can be executed in approximately a millisecond, which is comparable to existing TW protection in the transmission system. For experimental purposes, a DWT-based detection method is employed. A design of a setup to playback TWs using two development boards is also addressed.

Jiménez-Aparicio, Miguel (ORCID:000000016864461X)↗
DOE OSTI2024

High-current, high-voltage AlN Schottky barrier diodes

AlN Schottky barrier diodes with low ideality factor (<1.2), low differential ON-resistance (<0.6 mΩ cm 2 ), high current density (>5 kA cm −2 ), and high breakdown voltage (680 V) are reported. The device structure consisted of a two-layer, quasi-vertical design with a lightly doped AlN drift layer and a highly doped Al 0.75 Ga 0.25 N ohmic contact layer grown on AlN substrates. A combination of simulation, current–voltage measurements, and impedance spectroscopy analysis revealed that the AlN/AlGaN interface introduces a parasitic electron barrier due to the conduction band offset between the two materials. This barrier was found to limit the forward current in fabricated diodes. Further, we show that introducing a compositionally-graded layer between the AlN and the AlGaN reduces the interfacial barrier and increases the forward current density of fabricated diodes by a factor of 10 4 .

Quiñones, C. E. (ORCID:0000000192703747)↗
NASA NTRS1972

Development of lithium doped radiation resistent solar cells

Lithium-doped solar cells have been fabricated with initial lot efficiencies averaging 11.9 percent in an air mass zero (AMO) solar simulator and a maximum observed efficiency of 12.8 percent. The best lithium-doped solar cells are approximately 15 percent higher in maximum power than state-of-the-art n-p cells after moderate to high fluences of 1-MeV electrons and after 6-7 months exposure to low flux irradiation by a Sr-90 beta source, which approximates the electron spectrum and flux associated with near Earth space. Furthermore, lithium-doped cells were found to degrade at a rate only one tenth that of state-of-the-art n-p cells under 28-MeV electron irradiation. Excellent progress has been made in quantitative predictions of post-irradiation current-voltage characteristics as a function of cell design by means of capacitance-voltage measurements, and this information has been used to achieve further improvements in lithium-doped cell design.

Berman, P. A.↗
NASA NTRS1973

The light-sensitive MNOS memory transistor.

The behavior theory of the light-sensitive MNOS memory transistor is developed and supported by presented experimental evidence. It is shown that the nitride, oxide, and silicon space-charge current-field relationships necessary for comparison of theory and experiment can be obtained from steady-state current-voltage measurements on the MNOS device.

Sewell, F. A., Jr.↗
NASA NTRS1980

Characterization of prototype secondary lithium battery

The performance characteristics of ambient temperature secondary lithium batteries were determined through continuous cycle tests with periodic current and voltage measurements. Cycle life of the lithium anode was found to be an important problem area as was the formation of dentrite breakage and subsequent shorting. Energy density was increased by using more efficient cathode structures.

Somoano, R.↗
NASA NTRS1981

Measurement of characteristics of lightning at high altitudes

New development in aeronautical technology -- the use of composite materials, new electronic components, electric flight controls -- have made aircraft potentially more and more vulnerable to the effects of lightning. In-flight tests were conducted to evaluate the current in a bolt of lightning, to measure voltage surge in the onboard circuitry and in certain pieces of equipment, and to document the relationship lightning bolt current and the voltage surge so as to develop a theoretical model and thuds to become acquainted with the significant

Coquelet, M.↗
NASA NTRS1983

The ISPM unified radio and plasma wave experiment

Hardware for the International Solar Polar Mission (ISPM) Unified Radio and Plasma (URAP) wave experiment is presented. The URAP determines direction and polarization of distant radio sources for remote sensing of the heliosphere, and studies local wave phenomena which determine the transport coefficients of the ambient plasma. Electric and magnetic field antennas and preamplifiers; the electromagnetic compatibility plan and grounding; radio astronomy and plasma frequency receivers; a fast Fourier transformation data processing unit waveform analyzer; dc voltage measurements; a fast envelope sampler for the solar wind, and plasmas near Jupiter; a sounder; and a power converter are described.

Stone, R. G.↗
NASA NTRS1985

Heavily doped polysilicon-contact solar cells

The first use of a (silicon)/heavily doped polysilicon)/(metal) structure to replace the conventional high-low junction or back-surface-field (BSF) structure of silicon solar cells is reported. Compared with BSF and back-ohmic-contact (BOC) control samples, the polysilicon-back solar cells show improvements in red spectral response (RSR) and open-circuit voltage. Measurement reveals that a decrease in effective surface recombination velocity S is responsible for this improvement. Decreased S results for n-type (Si:As) polysilicon, consistent with past findings for bipolar transistors, and for p-type (Si:B) polysilicon, reported here for the first time. Though the present polysilicon-back solar cells are far from optimal, the results suggest a new class of designs for high efficiency silicon solar cells. Detailed technical reasons are advanced to support this view.

Lindholm, F. A.↗
NASA NTRS1985

Mephisto: Interfacial Destabilization in Metal Alloys

The destabilizing mechanisms at a solidification interface were studied to obtain information on the kinetics and morphologies in the transient and steady state, and to separate the influences of liquid phase instabilities from interfacial instabilities. A differential seebeck voltage measurements technique was developed to provide a continuous record of the solid-liquid interface temperature as the solidification rate is varied to determine the kinetic coefficients. Signal processing and noise suppression techniques allow nonovolt precision which corresponds to mK accuracy for the interfacial temperature.

Favier, J. J.↗
NASA NTRS1987

Electro-optical characterization of GaAs solar cells

The electro-optical characterization of gallium arsenide p/n solar cells is discussed. The objective is to identify and understand basic mechanisms which limit the performance of high efficiency gallium arsenide solar cells. The approach involves conducting photoresponse and temperature dependent current-voltage measurements, and interpretation of the data in terms of theory to determine key device parameters. Depth concentration profiles are also utilized in formulating a model to explain device performance.

Olsen, Larry C.↗
NASA NTRS1985

Front and back polysilicon-contacted silicon solar cells

The first use of a (silicon)/ (heavily doped polysilicon)/ (metal) structure to replace the conventional high-low junction (or back-surface-field, BSF) structure of silicon solar cells is reported. Compared with BSF and back-ohmic-contact control samples, the polysilicon-back solar cells show improvements in red spectral response and open-circuit voltage. Measurement reveals that a decrease in effective surface recombination velocity S is responsible for this improvement. Decreased S results for n-type (Si:As) polysilicon, consistent with past findings for bipolar transistors, and for p-type (Si:B) polysilicon, reported here for the first time. Though the present polysilicon-back solar cells are far from optimal, the results suggest a new class of designs for high efficiency silicon solar cells. Detailed technical reasons are advanced to support this view.

Lindholm, F. A.↗
NASA NTRS1987

Real time charge efficiency monitoring for nickel electrodes in NICD and NIH2 cells

The charge efficiency of nickel-cadmium and nickel-hydrogen battery cells is critical in spacecraft applications for determining the amount of time required for a battery to reach a full state of charge. As the nickel-cadmium or nickel-hydrogen batteries approach about 90 percent state of charge, the charge efficiency begins to drop towards zero, making estimation of the total amount of stored charge uncertain. Charge efficiency estimates are typically based on prior history of available capacity following standardized conditions for charge and discharge. These methods work well as long as performance does not change significantly. A relatively simple method for determining charge efficiencies during real time operation for these battery cells would be a tremendous advantage. Such a method was explored and appears to be quite well suited for application to nickel-cadmium and nickel-hydrogen battery cells. The charge efficiency is monitored in real time, using only voltage measurements as inputs. With further evaluation such a method may provide a means to better manage charge control of batteries, particularly in systems where a high degree of autonomy or system intelligence is required.

Zimmerman, A. H.↗
NASA NTRS1988

Sulfur as a surface passivation for InP

The use of liquid and gas phase sulfur pretreatment of the surface of InP as a way to form a near-ideal passivated surface prior to chemical vapor deposition of SiO2 was investigated. Results of high-frequency and quasi-static capacitance-voltage measurements, as well as enhancement mode insulated gate field-effect transistor (FET) transductance and drain current stability studies, all support the efficacy of this approach for metal-insulator-semiconductor application of this semiconductor. In particular, surface state values in the range of 10 to the 10th to a few 10 to the 11th/sq cm per eV and enhancement mode FET drain current drifts of less than 5 percent over a 12 h test period were measured.

Iyer, R.↗
NASA NTRS1989

Spectral analysis, digital integration, and measurement of low backscatter in coherent laser radar

A method of surface acoustic wave (SAW) spectral analysis and digital integration that has been used previously in coherent CW laser work with CO2 lasers at 10.6 microns is described. Expressions are derived for the signal to noise ratio in the measured voltage spectrum with an approximation for the general case and rigorous treatment for the low signal case. The atmospheric backscatter data accumulated by the airborne LATAS (laser true airspeed) coherent laser radar system are analyzed.

Vaughan, J. M.↗
NASA NTRS1990

Chemical reaction of atomic oxygen with evaporated films of copper, part 4

Evaporated copper films were exposed to an atomic oxygen flux of 1.4 x 10(exp 17) atoms/sq cm per sec at temperatures in the range 285 to 375 F (140 to 191 C) for time intervals between 2 and 50 minutes. Rutherford backscattering spectroscopy (RBS) was used to determine the thickness of the oxide layers formed and the ratio of the number of copper to oxygen atoms in the layers. Oxide film thicknesses ranged from 50 to 3000 A (0.005 to 0.3 microns, or equivalently, 5 x 10(exp -9) to 3 x 10(exp -7); it was determined that the primary oxide phase was Cu2O. The growth law was found to be parabolic (L(t) varies as t(exp 1/2)), in which the oxide thickness L(t) increases as the square root of the exposure time t. The analysis of the data is consistent with either of the two parabolic growth laws. (The thin-film parabolic growth law is based on the assumption that the process is diffusion controlled, with the space charge within the growing oxide layer being negligible. The thick-film parabolic growth law is also based on a diffusion controlled process, but space-charge neutrality prevails locally within very thick oxides.) In the absence of a voltage measurement across the growing oxide, a distinction between the two mechanisms cannot be made, nor can growth by the diffusion of neutral atomic oxygen be entirely ruled out. The activation energy for the reaction is on the order of 1.1 eV (1.76 x 10(exp -19) joule, or equivalently, 25.3 kcal/mole).

Fromhold, A. T.↗
NASA NTRS1992

A second generation expert system for checking and diagnosing AXAF's electric power system

AXAF - Advanced X-ray Astrophysics Facility - is a third NASA's great space observatory. Each of these observatories is intended to cover different parts of the electromagnetic spectrum (x-ray for AXAF) and to provide high resolution images of celestial sources in our universe. While the spacecraft is in orbit, the electric power system (EPS) performance is monitored via sensors measuring voltages, currents, pressures, and temperatures. The sensor data are sent from the spacecraft to the ground station as telemetry and analyzed on arrival. Monitoring, diagnosis and maintenance of such EPS is an arduous task which requires expertise and constant attention of the ground personnel. To help the ground crew in this task, much of it should be automated and delegated to expert systems, which draw engineer's attention to possible malfunctions and allows him to review the telemetry to determine the source of the trouble, diagnose the suspected fault and to propose a corrective action. Those systems are built on assumptions such as: (1) domain knowledge is available and can be represented as a set of rules; (2) domain knowledge is circumscribed, static, and monotonic; and (3) expert decision making can be emulated by a logical inference mechanism.

Bykat, Alex↗