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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Electric Drive Technologies Consortium (EDTC)/ Cost competitive, high-Performance, highly Reliable (CPR) Power Devices on 4H-SiC (Final Report)

4H-Silicon carbide (4H-SiC) is a wide bandgap semiconductor that offers superior material properties over silicon, including higher critical electric field, thermal conductivity, and electron saturation velocity. These advantages make 4H-SiC highly attractive for high-voltage, high-efficiency power electronics. However, realizing the full potential of SiC requires device technologies that are not only high-performing but also manufacturable and reliable under real-world operating conditions. This report summarizes the outcomes of a five-year R&D effort funded by the U.S. Department of Energy (DOE) under the Electric Drive Technologies Consortium (EDTC), focused on developing cost-competitive, high-performance, and highly reliable (CPR) power devices on 4H-SiC substrates. The program targeted scalable and manufacturable 1.2 kV-class SiC MOSFETs optimized for next-generation electric vehicles, renewable energy systems, and industrial power conversion. The project delivered transformative advancements in SiC power device performance and ruggedness. Particularly, Specific on-resistance (R on,sp ) was reduced by up to 37%, from ~4.0 m$\Omega \cdot$cm 2 in earlier designs to an industry-leading 2.40 m$\Omega \cdot$cm 2 , driven by optimized doping, refined JFET widths, and layout engineering. Breakdown voltages (BV) exceeded 1600 V, marking improvement over legacy baselines, and demonstrating the robustness of newly implemented junction profiles and edge terminations. Short-circuit withstand time (SCWT) saw a remarkable 4$\times$ increase, from ~2 $\mu$s to over 8 $\mu$s, achieved through the successful deployment of deep P-well structures (~1.8–2.0 $\mu$m) via channeling implantation. This innovative process breakthrough enabled precise junction formation without MeV-class implantation tools, reduced leakage under high field stress, and allowed even the shortest-channel devices (down to 0.3 $\mu$m) to achieve both high BV and excellent ruggedness—breaking the traditional trade-off between conduction efficiency and blocking capability. Several novel architectures pushed the performance envelope further. JBSFETs—featuring embedded Schottky portions—eliminated bipolar degradation and drastically reduced third-quadrant leakage, while Ladder MOSFETs introduced a clever orthogonal conduction path that achieved a 15.4% reduction in R on,sp over standard linear designs. Switching performance reached new benchmarks: short-channel devices showed a 31% reduction in total switching energy compared to 0.5 $\mu$m counterparts, while maintaining manageable gate drive requirements. Layout-optimized structures not only improved transconductance but also accelerated switching transitions, pointing to real-world benefits in converter-level efficiency. The devices also passed rigorous reliability validation. Stress-tested across TDDB, HTGB, HTRB, HVP, and burn-in, the devices screened under 30 V/10 hr and 43 V/1 s protocols consistently exhibited tighter lifetime distributions and long-term oxide robustness. These screening techniques proved effective in identifying latent defects and ensuring deployment-grade reliability. Meanwhile, advanced 3D TCAD simulations revealed and resolved electric field hotspots—particularly in HEXFET corners—where fields exceeding 4.8 MV/cm were mitigated through geometry-aware layout corrections. Overall, the results of this project demonstrate a manufacturable and scalable SiC power device platform that addresses key DOE performance targets for efficient, robust, and reliable 1.2kV 4H-SiC Power Devices. The developed technologies represent a meaningful step forward in the commercial readiness of high-voltage SiC solutions and provide a strong foundation for continued advancement in wide bandgap power electronics.

42 ENGINEERING↗
DOE OSTI2025

Spatial profile of argon (1s 5 ) metastables in an electron beam generated plasma

Electron beams with an applied magnetic field generate a secondary cold plasma with a selective chemical composition, featuring low-energy ions and metastable species in the discharge periphery, ideal for low-damage plasma treatment of material substrates. In this work, we studied the plasma generated by an e-beam using a 4 kV voltage in a pure argon gas environment under a magnetic field of 150 G and in the pressure range of 25–90 mTorr. We measured the absolute spatial density profile of argon (1 s 5 ) metastables in an electron beam generated plasma by laser-induced fluorescence and found it to be of the order of 10 16 m −3 . The electron temperature and the electron density measured by a Langmuir probe were of the order of 10 16 m −3 and less than an eV respectively. Electron-impact quenching was identified as a significant loss mechanism for the Ar(1s 5 ) state, leading to the saturation of the metastable density at higher pressures. Outside the primary ionization region, the spatial distribution of argon metastables followed a linear diffusion profile, indicating negligible additional production in those regions.

EEDF↗
DOE OSTI2021

Improved Control Strategy of Grid Interface for EV High-Power Dynamic Wireless Charging

This paper proposes a control strategy for the grid interface converter in high-power dynamic wireless charging system (DWCS) to address two issues on distribution network integration. Due to the unique pulsating load profile of DWCS, load transient response capability is critical for the grid interface to maintain the dc-bus voltage stable. Besides, the inherent unbalanced situation of distribution network would lead to 2nd-order oscillations on the dc-bus voltage, which would further affect the stable operation of the entire system. In this paper, the DWCS model is developed, and the relationship between the dc-bus voltage and the input/output power is analyzed. Based on the developed model, a control strategy based on direct power control is presented. Both simulation results and hardware-in-the-loop (HIL) results demonstrate that the proposed control strategy not only improves load transient response capability, but also eliminates the 2nd-order oscillations on the dc-bus voltage under imbalanced distribution network conditions.

Zeng, Rong↗
DOE OSTI2024

Effects of low-frequency voltage on nonlinear standing wave excitation, plasma uniformity, and ion dynamics in dual-frequency asymmetric capacitive discharges

Abstract It is known that in very-high-frequency (VHF) capacitively coupled plasmas, the higher harmonics generated by nonlinear sheath motion can enhance the standing wave effect (SWE), which can lead to center-peaked plasma density profiles. In this work, an improved nonlinear electromagnetic model incorporating a transmission line model, an electron momentum balance model, a bulk plasma model, a collisionless nonlinear numerical sheath model, and an ion Monte-Carlo collision (MCC) model is developed to study the effects of low-frequency (LF) voltage V L on the nonlinear standing wave excitation, plasma uniformity, and ion energy and angular distribution functions (IEDFs and IADFs) in dual-frequency (DF) asymmetric capacitive argon discharges at relatively low pressure of 3 Pa. The plasma diffusion in the radial direction and ion dynamics within the LF oscillating sheath are self-consistently considered. The LF voltage V L at 2 MHz varies from 0 to 700 V while the HF voltage V H at 60 MHz is fixed at 100 V. Simulation results indicate that without the addition of an LF source (i.e. V L = 0 V), there are a considerable number of high-order harmonics with short wavelengths, leading to significant SWE and central peak in the radial plasma density profile. Nevertheless, the high-order harmonic excitations tend to be weakened and merely occur around the phase of the full LF sheath collapse due to a shorter characteristic damping time of the surface waves as V L increases. This, combined with increased surface wavelengths of both the driving frequency and the higher harmonics at a higher V L , leads to suppressed standing waves and improved plasma uniformity. Meanwhile, the simulations show that both the low and the high energy peaks of IEDF move towards higher energies, and the energy peak separation width ΔEbecomes wider with the increase of V L . The IEDF at the radial center of the powered electrode exhibits a broader ΔEthan that at the edge. For the IADF, an increased V L results in more ions incident on the electrode with a smaller deflection angle. Because of a thinner sheath and a higher sheath voltage at the electrode center, the peak value of IADF at the electrode center is greater than that at the edge.

Physics↗
DOE OSTI2026

Public Reference Data for Megawatt-Scale Hydrogen Electrolysis - NLR Historical Wind

The U.S. Department of Energy and the National Laboratory of the Rockies (NLR) demonstrate hydrogen electrolysis from variable sources, hydrogen compression and storage, and hydrogen fuel cell power production using megawatt-scale equipment at NLR’s Flatirons Campus as part of the Advanced Research on Integrated Energy Systems (ARIES) initiative. This dataset represents part of that effort and is intended for academic, national laboratory, industrial, and other stakeholders to plan, design, and validate models of megawatt-scale hydrogen technologies and diverse energy infrastructure nationwide. These data provide a baseline for how existing hydrogen electrolysis technologies perform when coupled with various energy technologies. Future datasets will demonstrate how existing hydrogen fuel cell technologies can provide controllable, dispatchable, and variable power output for artificial intelligence (AI) data centers and other variable loads. This dataset entry describes hydrogen production by conducting a statistical analysis of historical wind data over a five-year period (2020-2025) from a single 1.5MW turbine manufactured by General Electric (GE) located at NLR’s Flatirons Campus, to generate an experimental test profile that was deployed on a 1.25-MW proton exchange membrane type MC250 electrolyzer system manufactured by Nel Hydrogen . [1] While the electrolyzer balance-of-plant supports up to 2.5 MW of electrolysis, NLR only has a single 1.25-MW electrolysis stack. The historical wind data provided several metrics, however, the analysis particularly focused on the measured power output by the wind turbine. The power output time series of data for each day was categorized by total energy generation and standard deviation, and the day that represented the highest combination of these two metrics was chosen – December 25th, 2022. This process was then repeated for a moving four-hour window within this day to identify the most statistically variable period. Finally, this four-hour period was scaled by 65% to match the 1.25 MW electrolyzer. The electrolysis system controls hydrogen production by varying DC current applied to the stack, from a maximum of 3000 A to a minimum safe operation of 300 A, or 10%. Because the current – voltage characteristic changes as the stack ages and efficiency degrades, the actual minimum safe operating power changes over time. The historical wind profiles were translated from power (kilowatts) to current (amperes) using a curve fit with calibration data and sent to the electrolyzer power supply at 1 Hz frequency. For more details on the statistical analysis process, see the presentation labeled “ Public Reference Data for Megawatt-Scale Hydrogen Electrolysis” provided with each data entry. These datasets report relevant hydrogen balance-of-plant and system data, all captured at 1 Hz, including hydrogen mass production measured with an Emerson Coriolis flow meter. Each .zip file represents a single wind turbine electrolysis experiment and is formatted as follows: {technology}_{scaling factor}-{electrolyzer ramp rate in amperes/second} For instance, “wind-GE1.5MW_0.65-400.zip” represents the hour-long experiment using historical data from the wind-GE1.5MW turbine, scaled to 65%, with the electrolyzer power supply set to a maximum ramp rate (gain and slew) of 400 A/s. Each .zip folder contains the following files: A .csv file containing raw data An .xlsx file explaining all the fields in the raw data. A .png plot showing the time series of hydrogen production, electrolysis power consumption, and wind power input. A PDF file detailing the historical wind data statistical analysis used to generate the wind profile. An experiment labeled “characterization_200.zip” demonstrates the MC250 electrolyzer steady-state response with 30-minute load steps for a total duration of 5 hours. Finally, a .csv file is provided with all simulated wind experiments combined into one dataset labeled "combined_historical_wind_experiments.csv". NLR also built an AI/machine-learning predictive model based on these datasets. The model ingests the electrolyzer current command in amperes, as well as various pressures and temperatures across the system, and predicts hydrogen output in kilograms per hour. The complete model can be found at https://huggingface.co/NatLabRockies/ptmelt-hydrogen-electrolysis [1] nelhydrogen.com/product/mc-series-electrolyser .

08 HYDROGEN↗
DOE OSTI2020

Improved Performance of Cu(InGa)(SeS) 2 PV Modules Using the Reaction of Metal Precursors. Final Report

This project “Improved Performance of Cu(InGa)(SeS) 2 PV Modules using the Reaction of Metal Precursors” was a partnership led by the Institute of Energy Conversion (IEC) at the University of Delaware with Columbia University and the Molecular Foundry at the Lawrence Berkeley National Laboratory. The aim was to develop pathways to improve Cu(InGa)(SeS) 2 (CIGSS) thin film photovoltaic modules using processes compatible with low manufacturing cost. The CIGSS approach investigated was a two-step process including deposition of metal precursor films following by reaction in hydride gases utilizing IEC’s novel reactor. The process was similar to that under commercial development by the project’s industry partner Stion. When Stion went out of business mid-project the focus changed to a rapid thermal process considered more commercially viable. Approaches to improve the performance of solar cells using the reacted films focused on two material innovations. First, the overall Ga content was increased to increase the operating voltage, which is desirable for scale-up to commercial modules. Second, the processing and performance advantages arising from Ag alloying were investigated. Advanced characterization guided process and material development including control of relative composition gradients. Research on the formation of Cu-Ga-In metal precursors utilized sputtering deposition which is normally used in commercial applications. The work resulted in processes for deposition of precursor stacks with increased relative Ga content and effects of deposition parameters on morphology and phase composition were established. It was shown that the metal precursor films have comparable phase composition and morphology so subsequent reaction follows from the same starting point. The addition of Ag to the metal precursors gave more uniform morphology and improved adhesion of reacted films which enable higher reaction temperature for faster processing. A novel outcome was the discovery of a previously undocumented material phase in sputter-deposited and evaporated Ag-Cu-In-Ga thin films. Hydride gas reaction processes including time-temperature-concentration profiles were developed for different precursor compositions. This enables control of composition profiles to engineer through-film gradients for solar cell optimization with characterization and simulations used to correlate measured film composition profiles to measurements of devices. In particular, the gradient of sulfur at the front of the CIGSS film was found to be critical. The simulations guided process development leading to improved reproducibility of devices improved performance with higher Ga content and higher voltage. With Ag-alloyed precursors, the reaction pathways leading were determined. A significant finding was that Ag-alloying increases the reaction rate to completely convert precursor films to the final chalcopyrite which could enable reduced reaction time to benefit manufacturability. To maintain potential commercial viability, the process under investigation was refocused to a rapid thermal process that could potentially be incorporated into an in-line process for manufacturing. Precursors with different composition were capped with an extra selenium layer and reacted in hydrogen sulfide 5-15 minutes, compared to typically 2 hours in the previous multi-step batch process. Critical RTP parameters were identified to control the reaction. Further optimization would be needed for high efficiency solar cells but pathways to high quality devices with further optimization and improved heating uniformity were developed. The project also developed new optoelectronic characterization approaches with a focus on development and application of spatial- and time-resolved photoluminescence and a custom mapping photoluminescence microscope built. It was shown how critical electronic transport properties strongly depend on the chemical composition of the material and that a wide range of samples show inhomogeneity on a length scale larger than the grains in the films. Additionally, two-photon excitation capability was developed to distinguish bulk vs surface losses. The project advances the state-of-the -art for precursor reaction processes in several ways that could impact manufacturing. This includes validation of approaches to increase voltage and establishment of model-guided control to form optimal composition profiles. The application of process control approaches with knowledge of phase formation and reaction pathways can be critically valuable in designing a large-scale process.

14 SOLAR ENERGY↗
DOE OSTI2022

β -Ga 2 O 3 MESFETs with insulating Mg-doped buffer grown by plasma-assisted molecular beam epitaxy

In this work, we develop in situ Mg doping techniques in plasma-assisted molecular beam epitaxy (PAMBE) of β -Ga 2 O 3 to compensate Si dopants at the substrate epilayer growth interface and eliminate parasitic leakage paths. Both abrupt and uniform Mg doping profiles over a wide range of concentrations were achieved in β -Ga 2 O 3 epilayers grown by PAMBE. Capacitance–voltage characteristics of Si and Mg co-doped samples confirmed the compensating effect of the Mg dopants. Mg delta-doping was then integrated into a β -Ga 2 O 3 metal-semiconductor field effect transistor structure and shown to be effective in eliminating source leakage. In conclusion, the results presented here show that Mg doping is a promising way to engineer insulating buffer layers for β -Ga 2 O 3 lateral devices grown by PAMBE.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

EVs@Scale NextGen Profiles: EVSE Characterization 2024

As part of the U.S. Department of Energy's EVs@Scale consortium, the Next-Generation Profiles (NextGen Profiles) project presents analysis and results from the characterization of high-power conductive and wireless charging infrastructure. High power charging equipment is capable of recharging electric vehicle traction batteries at power levels of 200KW and above. EVSE characterization was conducted over a wide range of DC output current and DC voltage charging for nominal and off-nominal test conditions. Test plans and procedures were developed and refined to define the test configurations and requirements, measurement parameters, and test procedures used throughout NextGen Profiles testing.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗
DOE OSTI2025

Sizing and Location Selection of Medium‐Voltage Back‐to‐Back Converters for DER‐Dominated Distribution Systems

Medium‐voltage back‐to‐back (MVB2B) converters can connect two distribution systems and quantifiably transfer power between them. This function can enable the MVB2B converter to exchange distributed energy resource (DER)‐generated power between two systems and bring significant value to enhancing distribution system DER adoption. Our previous work analysed and demonstrated the value MVB2B converter can bring to DER integration. As continuous work, this paper presents a methodology that helps address the MVB2B converter sizing and location selection problem in distribution systems with high DER penetrations. The proposed methodology aims to address three critical problems for MVB2B converter implementation in the real world: (1) which distribution systems are better to be connected, (2) what converter size is appropriate for connecting the distribution systems, and (3) where the optimal connection points are in the systems for connecting the MVB2B converter. The proposed methodology has been demonstrated by case studies that include various scenarios involving distribution systems with different dominated load types and high photovoltaic penetrations. The results demonstrate that selecting the optimal converter size based on net revenue and time of return considerations leads to a balance between maximizing energy savings and minimizing financial payback periods. Furthermore, feeder pair selection based on load profile standard deviation effectively identifies systems that derive the greatest value from MVB2B integration. Finally, an optimized connection point selection approach using a voltage load sensitivity matrix ensures minimal system impact while facilitating efficient power exchange. These findings provide practical insights for the real‐world deployment of MVB2B converters to enhance DER hosting capacity and improve grid resilience.

14 SOLAR ENERGY↗
DOE OSTI2021

Radiation Effects in III-V Solar Cells Grown by Dynamic Hydride Vapor Phase Epitaxy

The recent development of hydride vapor phase epitaxy (HVPE) is potentially promising as a route to lower the cost of high-efficiency III-V solar cells for space applications. HVPE produces the same materials and device structures as the industry-standard organometallic vapor phase epitaxy (OMVPE) process, and although HVPE has shown promising device efficiencies, it lags the OMVPE growth technique in technical maturity. For example, there are no reports of the performance of HVPE-grown devices in radiation environments. There is an expectation that high-quality (that is, single crystal and low-defect) III-V materials will behave similarly regardless of the growth method. However, it is important to verify assumptions as facts. In this project, we produced materials and devices using both HVPE and OMVPE at NREL and irradiated them using 1 MeV electrons to ascertain the effect of radiation on the materials. We also performed initial work on producing more radiation-hard structures, including devices with the pn junction at the front of the device, and devices with a graded doping profile, both of which help with radiation tolerance. Measurements of the devices post radiation exposure showed that the open-circuit voltage (V OC ) of the HVPE-grown solar cells degraded least on a percent basis, although they also started from a lower baseline than the OMVPE-grown devices. All solar cells reached approximately the same V OC after irradiation, indicating that the dose used was sufficient to degrade all device equally. The short-circuit current in the HVPE devices did degrade more than the other solar cells, and this was attributed to a higher-than-expected doping density in the base layer of that cell. The results of these experiments, while by no means comprehensive, do not show any material difference in the radiation effects in OMVPE- and HVPE-grown materials and devices.

14 SOLAR ENERGY↗
DOE OSTI2026

Hydrogen Production System Scaling Using a High-Fidelity Simulation-Optimization Framework

Proton exchange membrane (PEM) electrolyzers are widely used for hydrogen production, yet few validated, high-fidelity tools can reliably guide scale-up. Using measured performance from a 50-hour hardware-in-the-loop pilot test, a physics-based, plant-level model of a 1.25 MW PEM electrolyzer and its balance-of-plant (BoP) subsystems is developed and validated. The model couples electrochemistry and thermal/flow submodels and is calibrated against pilot test data via a genetic algorithm (GA) workflow. Validation yields a mean absolute percentage error (APE) of 0.43% for cell voltage and stack power. Two scale-out strategies are then benchmarked under a common 7-day wind-and-photovoltaic (PV) profile: (i) linear duplication of 1.25 MW blocks and (ii) shared-BoP architectures. Sharing BoP between stacks reduces BoP energy by 27% at 10 MW and 34% at 100 MW (vs. linear duplication) and improves system specific energy consumption (SEC) to 52.9 and 52.6 kWh/kg, respectively (from 54.0 kWh/kg with linear duplication). Partial-load studies (25-100% set-point) show that cumulative hydrogen production remains nearly constant down to 50% load because all cases use the same weekly renewable-energy input. Below 50%, the power cap limits how much energy can be used within 168 h, which reduces hydrogen output. The model further indicates that the practical operating optimum lies between 50% and 85% load, where efficiency gains begin to appear without significant loss in hydrogen output. Moreover, the efficiency gains at lower loads are offset by reduced production. The validated framework supports scenario-based engineering trade-off studies for large configurations (10-100 MW) and for operating policies under variable renewables.

08 HYDROGEN↗
DOE OSTI2026

A Dual-Active-Bridge Converter Employing a Variable Inductor Without an Auxiliary Circuit

This paper proposes a dual active bridge (DAB) converter employing a variable inductor (VI) without an auxiliary circuit. Unlike conventional VI-based designs that require an external DC bias circuit, the proposed DAB utilizes the input DC current itself as the bias source, enabling automatic inductance variation with load conditions. The inductance naturally increases at low power and decreases at high power, effectively extending the zero voltage switching (ZVS) range and reducing circulating current, respectively. The VI was experimentally implemented and characterized to obtain its inductance-current profile, which was then integrated into a PLECS model of the DAB converter for circuit and thermal simulations. Simulation results confirm that the proposed auxiliary-free VI-DAB converter achieves a wider ZVS range and lower circulating current compared with a conventional fixed-inductor DAB converter. By realizing a variable inductor without any auxiliary bias circuitry, the proposed approach maintains soft switching and reduces reactive current losses across a wide load range, leading to improved efficiency and simplified implementation.

Jo, Cheolhui [ORNL] (ORCID:0000000322692434)↗
DOE OSTI2020

Data-Driven Load Diversity and Variability Modeling for Quasi-Static Time-Series Simulation on Distribution Feeders

This paper presents a data-driven load modeling methodology for distribution system quasi-static time-series (QSTS) simulation considering both diversity and variability characteristics of distribution loads. Based on our previous work in [1]-[2], a variability library and diversity library have been established based on the realistic high-resolution data collected from actual utility feeders. Given the load profile for the start-of-circuit load of a feeder, the loads on the feeder nodes can be modeled with both diversity and variability instead of being directly scaled from the substation load profile according to the distribution allocation factors. With diversified load models, the load-induced impact on the feeder operation characteristics, such as voltage ramp and regulator operations, can be better considered in QSTS simulation. The proposed modeling methodology has been tested on both the IEEE 123-bus feeder and an actual utility feeder model, and the simulation results have demonstrated the merits of deploying the proposed load modeling methodology.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2021

Online Detection of Low-Quality Synchrophasor Data Considering Frequency Similarity

Here, this letter proposes a new approach for online detection of low-quality synchrophasor data under both normal and event conditions. The proposed approach utilizes the features of synchrophasor data in time and frequency domains to distinguish multiple regional PMU signals and detect low-quality synchrophasor data. It is more effective to detect low-quality data with apparently indistinguishable profiles. Case studies from recorded synchrophasor measurements verify the effectiveness of the proposed approach for detecting low-quality synchrophasor data in frequency, voltage magnitude and voltage angle.

42 ENGINEERING↗
DOE OSTI2020

The sodium channel Na X : Possible player in excitation–contraction coupling

Abstract The sodium channel Na X (encoded by the SCN7A gene) was originally identified in the heart and skeletal muscle and is structurally similar to the other voltage‐gated sodium channels but does not appear to be voltage gated. Although Na X is expressed at high levels in cardiac and skeletal muscle, little information exists on the function of Na X in these tissues. Transcriptional profiling of ion channels in the heart in a subset of patients with Brugada syndrome revealed an inverse relationship between the expression of Na X and Na V 1.5 suggesting that, in cardiac myocytes, the expression of these channels may be linked. We propose that Na X plays a role in excitation–contraction coupling based on our experimental observations. Here we show that in cardiac myocytes, Na X is expressed in a striated pattern on the sarcolemma in regions corresponding to the sarcomeric M‐line. Knocking down Na X expression decreased Na V 1.5 mRNA and protein and reduced the inward sodium current ( I Na+ ) following cell depolarization. When the expression of Na V 1.5 was knocked down, ~85% of the I Na+ was reduced consistent with the observations that Na V 1.5 is the main voltage‐gated sodium channel in cardiac muscle and that Na X likely does not directly participate in mediating the I Na+ following depolarization. Silencing Na V 1.5 expression led to significant upregulation of Na X mRNA. Similar to Na V 1.5, Na X protein levels were rapidly downregulated when the intracellular [Ca 2+ ] was increased either by CaCl 2 or caffeine. These data suggest that a relationship exists between Na X and Na V 1.5 and that Na X may play a role in excitation–contraction coupling.

Bogdanovic, Elena↗
DOE OSTI2025

Electron density profile and associated fluctuation measurements using a microwave reflectometry diagnostic on Helically Symmetric eXperiment (HSX)

Abstract A dual-band frequency-modulated reflectometry is employed on the Helically Symmetric eXperiment (HSX) stellarator. This system equips a fast PIN switch to alternate the frequency source between two voltage-controlled oscillators, providing an operational frequency range from 14.5 GHz to 25.5 GHz. A monostatic antenna geometry and an ellipsoidal mirror are implemented in the vessel of HSX, where the polarization of the transmitted microwave can be switched between O- and X-mode to accommodate the magnetic field and plasma density. Although the original system was designed for density fluctuation measurement, significant efforts have been undertaken to improve the system performance and to realize the density profile inversion. Recent improvements of the system reported here include calibration of the dispersion in the transmission line, optimization of the waveform, and implementation of the Choi-Williams time–frequency distribution for spectral analysis. In this paper, we present the optimization of the reflectometry system along with first experimental measurements of the density profile and observations of fluctuations during gas puffing experiments.

Han, X. (ORCID:0000000184986433)↗
DOE OSTI2025

Understanding the Beneficial Role of Transition-Metal Layer Na + Substitution on the Structure and Electrochemical Properties of the P2-Layered Cathode Na 2+ x Ni 2– x /2 TeO 6

Layered Na x MO 2 sodium oxide positive electrode materials have experienced renewed interest owing to the current commercial attention on sodium-ion batteries. Although there are many attractive qualities of these materials, they suffer from serious shortcomings owing to Na + ordering and transition-metal layer gliding that cause a plethora of voltage plateaus during cycling. The P2-layered Na 2+x Ni 2–x/2 TeO 6 (0 ≤ x ≤ 0.5) system provides a framework for investigating the effect of dual Na + substitution into the sodium layer and the transition-metal layer of the structure and its effects on the electrochemical properties of the materials. A careful investigation into the synthesis and properties of these materials reveals that the sodium content used during material preparation has a drastic effect on the composition and electrochemical profile of these materials. The sodium substitution disrupts ordering within the transition-metal layer, thereby disrupting Na + ordering in the adjacent sodium layers. Beyond a critical sodium concentration, the layer stacking shifts, and all voltage plateaus of the P2-Na 2 Ni 2 TeO 6 material are no longer observed at 4.4 V versus Na + /Na. These results also question the common belief that additional sodium precursor is required when preparing layered sodium oxide cathodes, providing new guidelines for material synthesis and characterization.

36 MATERIALS SCIENCE↗