Anisotropic thermal transport in bulk hexagonal boron nitride
Hexagonal boron nitride (h-BN) has received great interest in recent years as a wide band-gap analog of graphene-derived systems along with its potential in a wide range of applications, for example, as the dielectric layer for graphene devices. However, the thermal transport properties of h-BN, which can be critical for device reliability and functionality, are little studied both experimentally and theoretically. The primary challenge in the experimental measurements of the anisotropic thermal conductivity of h-BN is that typically the sample size of h-BN single crystals is too small for conventional measurement techniques, as state-of-the-art technologies synthesize h-BN single crystals with lateral sizes only up to 2.5 mm and thicknesses up to 200 μm. Recently developed time-domain thermoreflectance (TDTR) techniques are suitable to measure the anisotropic thermal conductivity of such small samples, as it only requires a small area of 50 × 50 μm 2 for the measurements. Accurate atomistic modeling of thermal transport in bulk h-BN is also challenging due to the highly anisotropic layered structure. Here we conduct an integrated experimental and theoretical study on the anisotropic thermal conductivity of bulk h-BN single crystals over the temperature range of 100–500 K using TDTR measurements with multiple modulation frequencies and a full-scale numerical calculation of the phonon Boltzmann transport equation starting from first principles. Our experimental and numerical results compare favorably for both the in-plane and the through-plane thermal conductivities. We observe unusual temperature dependence and phonon-isotope scattering in the through-plane thermal conductivity of h-BN and elucidate their origins. Here, this article not only provides an important benchmark of the anisotropic thermal conductivity of h-BN, but also develops fundamental insight into the nature of phonon transport in this highly anisotropic layered material.