Approach to determining the limiting recombination mechanism in CdTe-based solar cells
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The efficiency of state-of-the-art Cd Te solar cells remains limited by the relatively low open-circuit voltage (V OC ). Improving the front interface is key towards realizing a higher V OC after achieving the necessary bulk carrier density and lifetime. Recent efforts in identifying buffer layers beyond Cd S have focused on Mg x Zn 1-x O, which offers tunability of the band offsets, but often suffers from high interfacial defect densities. Ga 2 O 3 -based buffer layers demonstrate tremendous improvements in interfacial defect passivation in crystalline silicon and dye-sensitized solar cells, leading to record high V OC , yet remain largely unexplored in Cd Te-based devices. Here, we perform hybrid density-functional-theory calculations to investigate pure Ga 2 O 3 and InGaO 3 alloys as a window layer in Cd Te photovoltaics. We report calculated band offsets for several pairs of solid-solid interfaces comprising transparent conducting oxide (TCO) and Cd Te heterojunctions. The results support a large conduction band offset spike of 0.67 eV for the Cd Te/Ga 2 O 3 (100) interface, while the offset is reduced to 0.18 eV for the InGaO 3 alloy and matches closely with the preferred optimum value of 0.2 eV. Device-level modeling tests of Cd Te solar cells integrating our results indicate that the highest efficiency is achieved with InGaO 3 acting both as a buffer layer and TCO. Finally, our results suggest that alloys of In 2 O 3 and Ga 2 O 3 may be attractive alternatives to Mg x Zn 1-x O for tailoring optimal conduction-band offsets of the buffer and TCO layers in high-efficiency Cd Te thin-film solar cells.
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Cadmium telluride photovoltaics has benefitted greatly from the cadmium chloride treatment which causes a remarkable improvement in cell efficiencies. This work investigates the effect of elemental chlorine at the interface between the magnesium zinc oxide front contact and the cadmium telluride absorber in such a device. Band alignment including band bending and interface states and its role in potential charge carrier transport is the key feature studied. It is seen that a small amount of chlorine is leads to a more desirable band alignment. Higher concentrations of chlorine result in unfavorable band characteristics.
Since excellent carrier lifetimes and front interface electronic quality are now achieved, rear interface recombination can limit V OC in CdSexTe1-x/CdTe solar cells. Several back-contact structures for devices were fabricated using combinations of tellurium, aluminum oxide, amorphous silicon, and indium tin oxide (ITO). Time-resolved photoluminescence was used to characterize such structures. We show increasingly improved interface passivation through the subsequent use of aluminum oxide, amorphous silicon, and ITO. Additionally, we show that arsenic-doped absorbers form a more passive interface with numerous back contact structures.
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Solar has been demonstrated to be a robust renewable energy source, constituting a significant portion of the United States’ renewable energy portfolio. Despite its growth across residential, commercial, and utility sectors over the past decades, it remains a small fraction of the overall energy infrastructure. Challenges persist in fully harnessing solar power to meet the nation's escalating energy demands. Among these challenges lies the hurdle of efficiently distributing large quantities of solar-generated electricity to densely populated regions with the highest energy needs and costs. Traditional utility-scale arrays demand extensive land, a luxury often unavailable in metropolitan areas. Consequently, installations must be situated at a distance, necessitating additional infrastructure for electricity transmission to service areas. While metropolitan landscapes lack sprawling open spaces suitable for conventional utility-scale solar deployment, they offer a different resource: windows. Semitransparent photovoltaic window technology has the potential to not only bolster the grid's energy capacity, but to also provide HVAC and economic advantages to building owners. However, commercial availability of building-integrated photovoltaic windows remains limited. Silicon based photovoltaics currently dominate the solar market but adapting them for use in windows poses a variety of engineering and economic challenges such as relatively low power density, high costs associated with custom manufacturing, and aesthetic considerations. Addressing these challenges, this project explored the use of laser ablation patterning to manufacture cost-effective, high-efficiency, semitransparent Cadmium Telluride photovoltaic modules. Results showcased the potential of this methodology in developing photovoltaic windows and other innovative semitransparent PV applications. The ablation manufacturing technique demonstrated great versatility in achieving different patterns and levels of visible light transmission, and the power loss due to ablation was nearly directly proportional to the amount of material removed. Furthermore, the manufacturing process for Cadmium Telluride modules already has established advantages in material and energy efficiency, and the conversion of a standard submodule to semitransparent essentially requires a single additional process step, ensuring scalability. It is important to note that during this work, Toledo Solar experienced substantial organizational upheaval stemming from a lawsuit with First Solar. An external investigation led the board of directors to remove and replace the previous management team, and several other members of the staff elected to depart as well, including the then acting Principle Investigator on this project. The remaining Toledo Solar team attempted to recover from the disruption and deliver on the remaining tasks, but upon its own review, the Department of Energy ruled the project in default and terminated the contract in December 2023.
Thin, polycrystalline, cadmium telluride solar cells
Photoemission study of electronic structure of cadmium telluride single crystals
Electronic structure photoemission studies of cadmium telluride, cadmium selenide, and cadmium sulfide
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CdZnTe crystals were grown in one-g and in micro-g for comparative analysis. The two micro-g crystals were grown in the Crystal Growth Furnace during the First United States Microgravity Laboratory mission (USML-1). The samples were analyzed for chemical homogeneity, structural perfection, and optoelectronic performance (infrared transmission). Fourier Transform Infrared (FTIR) transmission of both ground and flight materials showed that the infrared transmission was close to theoretical, 63% versus 66%, suggesting that the material was close to the stochiometric composition during both the ground and flight experiments. Infrared microscopy confirmed that the principal precipitates were Te and their size (1-10 microns) and density suggested that the primary flight and ground base samples experienced similar cooling rates. Macrosegregation was predicted, using scaling analysis, to be low even in one-g crystals and this was confirmed experimentally, with nearly diffusion controlled growth achieved even in the partial mixing regime on the ground. Radial segregation was monitored in the flight samples and was found to vary with fraction solidified, but was disturbed due to the asymmetric grvitational and thermal fields experienced by the flight samples. The flight samples, however, were found to be much higher in structural perfection than the ground samples produced in the same furnace under identical growth conditions except for the gravitational level. Rocking curve widths were found to be substantially reduced, from 20/35 (one-g) to 9/20 (micro-g) for the best regions of the crystals. The full width at half maximum (FWHM) of 9 arc seconds is as good as the best reported terrestrially for this material. The ground samples were found to have a fully developed mosaic structure consisting of subgrains, whereas the flight sample dislocations were discrete and no mosaic substructure was evident. The defect density was reduced from 50-100,000 (one-g) to 500-25000 EPD (micro-g). These results were confirmed using rocking curve analysis, synchrotron topography, and etch pit analysis. The low dislocation density is thought to have resulted from the near-absence of hydrostatic pressure which allowed the melt to solidify with minimum or no wall contact, resulting in very low stress being exerted on the crystal during growth or during post-solidification cooling.
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