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An application in which CCD optical imaging arrays with 250,000 elements are fabricated from the best commercially available float zone Si is described. Two image defects are described which appear to be related to the starting material. The striation effect appears to be caused by resistivity and recombination center variations. Up to 30 percent variations in resistivity was measured across a sample.
Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.
Composite panels containing up to 40 vol % discontinuous silicon carbide SiC whisker, nodule, or particulate reinforcement in several aluminum matrices are commercially fabricated and the mechanical properties and microstructual characteristics are evaluated. The yield and tensile strengths and the ductility are controlled primarily by the matrix alloy, the temper condition, and the reinforcement content. Particulate and nodule reinforcements are as effective as whisker reinforcement. Increased ductility is attributed to purer, more uniform starting materials and to more mechanical working during fabrication. Comparing mechanical properties with those of other aluminum alloys shows that these low cost, lightweight composites demonstrate very good potential for application to aerospace structures.
The commercialization of solar power generation necessitates the development of low cost manufacturing method of silicon suitable for solar cells. The manufacturing methods of semiconductor grade silicon (SEG-Si) and the development of solar grade silicon (SOG-Si) in foreign countries was investigated. It was concluded that the most efficient method of developing such materials was the hydrogen reduction process of trichlorosilane (TCS), using a fluidized bed reactor. The low cost reduction of polysilicon requires cost reductions of raw materials, energy, labor, and capital. These conditions were carefully reviewed. The overall conclusion was that a development program should be based on the TCS-FBR process and that the experimental program should be conducted in test facilities capable of producing 10 tons of silicon granules per year.
Three-terminal, double-stacked-gate field-effect transistor (FET), developed as analog memory element. Particularly suited for use as synapse with variable connection strength in electronic neural network. Provides programmable, nonvolatile resistive connection, somewhat in manner of porous-gate FET described in "Porous-Floating-Gate Field-Effect Transistor" (NPO-17532). Resembles commercial erasable programmable read-only memory (EPROM) device, except for thickness of layers of silicon dioxide electrically isolating gates. Either p-channel or n-channel device.
We describe an approach to build an x-ray mirror assembly that can meet Lynx’s requirements of high-angular resolution, large effective area, light weight, short production schedule, and low-production cost. Adopting a modular hierarchy, the assembly is composed of 37,492 mirror segments, each of which measures ∼100 mm × 100 mm × 0.5 mm. These segments are integrated into 611 modules, which are individually tested and qualified to meet both science performance and spaceflight environment requirements before they in turn are integrated into 12 metashells. The 12 metashells are then integrated to form the mirror assembly. This approach combines the latest precision polishing technology and the monocrystalline silicon material to fabricate the thin and lightweight mirror segments. Because of the use of commercially available equipment and material and because of its highly modular and hierarchical building-up process, this approach is highly amenable to automation and mass production to maximize production throughput and to minimize production schedule and cost. As of fall 2018, the basic elements of this approach, including substrate fabrication, coating, alignment, and bonding, have been validated by the successful building and testing of single-pair mirror modules. In the next few years, the many steps of the approach will be refined and perfected by repeatedly building and testing mirror modules containing progressively more mirror segments to fully meet science performance, spaceflight environments, as well as programmatic requirements of the Lynx mission and other proposed missions, such as AXIS.
Monocrystalline silicon is an excellent X-ray mirror substrate material due to its high stiffness, low density, high thermal conductivity, zero internal stress, and commercial availability. Our work at NASA Goddard Space Flight Center focuses on identifying and developing a manufacturing process to produce high resolution and lightweight X-ray mirror segments in a cost and time effective manner. Previous efforts focused on demonstrating the feasibility of cylindrical silicon mirror polishing and lightweighting. Present efforts are aimed towards producing true paraboloidal and hyperboloidal mirror surfaces on the lightweight silicon segments. This paper presents results from these recent investigations, including a mirror which features a surface quality sufficient for a 3 arcsecond telescope.
Strong and tough Hi-Nicalon SiC fiber reinforced reaction-bonded silicon nitride matrix composites (SiC/ RBSN) have been fabricated by the fiber lay-up approach. Commercially available uncoated and PBN, PBN/Si-rich PBN, and BN/SiC coated SiC Hi-Nicalon fiber tows were used as reinforcement. The composites contained approximately 24 vol % of aligned 14 micron diameter SiC fibers in a porous RBSN matrix. Both one- and two-dimensional composites were characterized. The effects of interface coating composition, and the nitridation enhancing additive, NiO, on the room temperature physical, tensile, and interfacial shear strength properties of SiC/RBSN matrix composites were evaluated. Results indicate that for all three coated fibers, the thickness of the coatings decreased from the outer periphery to the interior of the tows, and that from 10 to 30 percent of the fibers were not covered with the interface coating. In the uncoated regions, chemical reaction between the NiO additive and the SiC fiber occurs causing degradation of tensile properties of the composites. Among the three interface coating combinations investigated, the BN/SiC coated Hi-Nicalon SiC fiber reinforced RBSN matrix composite showed the least amount of uncoated regions and reasonably uniform interface coating thickness. The matrix cracking stress in SiC/RBSN composites was predicted using a fracture mechanics based crack bridging model.
Process reacts alumina hydrate with HF and NaF from silicon-production process. Cryolite is produced by adding reaction step to process that makes high-purity silicon from fluorosilicic acid. New extended process has been demonstrated in laboratory and could be used in commercial plants.
Two types of sintered silicon nitride were evaluated in terms of reliability: an experimental high pressure nitrogen sintered material and a commercial material. The results show wide variations in strength for both materials. The Weibull moduli were 5.5, 8.9, and 11 for the experimental material at room temperature, 1200, and 1370 C, respectively. The commercial material showed Weibull moduli of 9.0, 8.6, and 8.9 at these respective temperatures. No correlation between strength and flaw size was noted for the experimental material. The applicability of the Weibull and Griffith theories to processing defects on the order of 100 microns or less in size are discussed.
Ceramic-composite turbine blades and other components that must withstand severe thermal shocks developed for aerospace and, potentially, for terrestrial applications. Made of silicon carbide reinforced by continuous carbon fibers. Materials withstand high temperatures, exhibit high toughness, and fail gradually. Commercial applications include brake linings for fast trains and aircraft, industrial heat exchangers, and nozzles and other devices for handling molten metals.
Comparative tests have been performed to evaluate the corrosion-prevention capabilities of an experimental paint of the type described in Water-Borne, Silicone-Based, Primerless Paints, NASA Tech Briefs, Vol. 26, No. 11 (November 2002), page 30. To recapitulate: these paints contain relatively small amounts of volatile organic solvents and were developed as substitutes for traditional anticorrosion paints that contain large amounts of such solvents. An additional desirable feature of these paints is that they can be applied without need for prior application of primers to ensure adhesion. The test specimens included panels of cold-rolled steel, stainless steel 316, and aluminum 2024-T3. Some panels of each of these alloys were left bare and some were coated with the experimental water-borne, silicone-based, primerless paint. In addition, some panels of aluminum 2024-T3 and some panels of a fourth alloy (stainless steel 304) were coated with a commercial solvent-borne paint containing aluminum and zinc flakes in a nitrile rubber matrix. In the tests, the specimens were immersed in an aerated 3.5-weight-percent aqueous solution of NaCl for 168 hours. At intervals of 24 hours, the specimens were characterized by electrochemical impedance spectroscopy (EIS) and measurements of corrosion potentials. The specimens were also observed visually. As indicated by photographs of specimens taken after the 168-hour immersion (see figure), the experimental primerless silicone paint was effective in preventing corrosion of stainless steel 316, but failed to protect aluminum 2024-T3 and cold-rolled steel. The degree of failure was greater in the case of the cold-rolled steel. On the basis of visual observations, EIS, and corrosion- potential measurements, it was concluded that the commercial aluminum and zinc-filled nitrile rubber coating affords superior corrosion protection to aluminum 2024-T3 and is somewhat less effective in protecting stainless steel 304.
This article discusses the development of microwave circuits on silicon substrate. Silicon, even though inexpensive, did not provide the performance required for microwave circuits. Instead the development of microwave circuits used GaAs and InP substrates. With the development of commercial usages for microwave circuits, the costs of microwave circuits became an issue. The importance of cost, and the development of Si-device capabilities and fabrication techniques, such as molecular beam epitaxy, and ultra-high chemical vapor deposition. provided the circumstances where the development of microwave circuits on silicon is now possible.
Technologies that will enable the private sector to manufacture and widely use photovoltaic systems for the generation of electricity in residential, commercial, industrial, and government applications at a cost per watt that is competitive with other means is investigated. Silicon refinement processes, advanced silicon sheet growth techniques, solar cell development, encapsulation, automated fabrication process technology, advanced module/array design, and module/array test and evaluation techniques are developed.
High toughness silicon nitride ceramics were processed with the addition of small quantities of beta-Si3N4 whiskers in a commercially available alpha-Si3N4 powder. These whiskers grew preferentially during sintering resulting in large, elongated beta-grains, which acted to toughen the matrix by crack deflection and grain pullout. The fracture toughness of these samples seeded with beta-Si3N4 whiskers ranged from 8.7 to 9.5 MPa m(exp 0.5) depending on the sintering additives.
A key to the successful application of metal and ceramic composite materials in advanced propulsion and power systems is the judicious selection of continuous-length fiber reinforcement. Appropriate fibers can provide these composites with the required thermomechanical performance. To aid in this selection, researchers at the NASA Lewis Research Center, using in-house state-of-the-art test facilities, developed an extensive data base of the deformation and fracture properties of commercial and developmental ceramic fibers at elevated temperatures. Lewis' experimental focus was primarily on fiber compositions based on silicon carbide or alumina because of their oxidation resistance, low density, and high modulus. Test approaches typically included tensile and flexural measurements on single fibers or on multifilament tow fibers in controlled environments of air or argon at temperatures from 800 to 1400 C. Some fiber specimens were pretreated at composite fabrication temperatures to simulate in situ composite conditions, whereas others were precoated with potential interphase and matrix materials.
Dr. Jean-Marie Lauenstein, NASA Goddard Space Flight Center, will present the radiation challenges of adopting wide-bandgap semiconductors for space applications. Wide-bandgap devices are attractive for space applications due to improved performance such as faster switching speeds, lower power losses, and their ability to operate at higher temperature as compared with their silicon counterparts. Their tolerance to total ionizing dose levels (> 100 krad(Si)) further enhances the desirability of these technologies. This short course will focus on silicon carbide and gallium nitride power rectifying, switching, and RF devices as these technologies are now readily available commercially. The radiation hardness assurance issues presented by the heavy-ion radiation environment will be discussed.
Affordable, Robust Ceramic Joining Technology (ARCJoint) is a method for joining high temperature- resistant ceramic pieces together, establishing joints that are strong, and allowing joining to be done in the field. This new way of joining allows complex shapes to be formed by joining together geometrically simple shapes. The joining technology at NASA is one of the enabling technologies for the application of silicon-carbide-based ceramic and composite components in demanding and high-temperature applications. The technology is being developed and tested for high-temperature propulsion parts for aerospace use. Commercially, it can be used for joining ceramic pieces used for high temperature applications in the power-generating and chemical industries, as well as in the microelectronics industry. This innovation could yield big payoffs for not only the power-generating industry but also the Silicon Valley chipmakers. This technology, which was developed at the NASA Glenn Research Center by Dr. Mrityunjay Singh, is a two-step process involving first using a paste to join together ceramic pieces and bonding them by heating the joint to 110 to 120 C for between 10 and 20 min. This makes the joint strong enough to be handled for the final joining. Then, a silicon-based substance is applied to the joint and heated to 1400 C for 10 to 15 min. The resulting joint is as strong as the original ceramic material and can withstand the same high temperatures.