Search NASA⌕ Search

SEARCH · Search NASA

Results for “Coupling capacitance”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 199 records · Page 11

An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor

The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to low-power field-effect devices that can be used for logic or memory. Essential to realizing such field-effect devices is the development of ferroelectric metal-oxide-semiconductor (MOS) capacitors, in which the polarization of a ferroelectric gate is coupled to the surface potential of a semiconducting channel. Here we demonstrate that ferroelectric MOS capacitors can be realized using single crystalline SrZr x Ti 1-x O 3 (x= 0.7) that has been epitaxially grown on Ge. We find that the ferroelectric properties of SrZr x Ti 1-x O 3 are exceptionally robust, as gate layers as thin as 5 nm give rise to hysteretic capacitance-voltage characteristics that are 2 V in width. The development of ferroelectric MOS capacitors with gate thicknesses that are technologically relevant opens a pathway to realize scalable ferroelectric field-effect devices.

Moghadam, Reza M.↗

Magnetoelastic coupling and phases in the skyrmion lattice magnet Gd 2 PdSi 3 discovered by high-resolution dilatometry

In this work, we report detailed thermodynamic studies on high-quality single crystals of the centrosymmetric skyrmion-hosting intermetallic Gd 2 PdSi 3 by means of high-resolution capacitance dilatometry in fields up to 15 T which are complemented by specific heat and magnetization studies. Our dilatometric measurements show magnetoelastic effects associated with antiferromagnetic order at T N1 =22.3 K and T N2 =19.7 K, as well as strong field effects in an applied magnetic field of 15 T up to 200 K (150 K) for B ∥ c (B ∥ a*, i.e., B ⊥ c). The data allow us to complete the magnetic phase diagram, including a feature at T * ≈13K below which an additional degree of freedom becomes relevant. The magnetic B vs T phase diagram for the a * axis is also reported. Grüneisen analysis shows the onset of magnetic contributions around 60 K, i.e., well above TN1. Uniaxial pressure dependencies of opposite signs, –1.3 and 0.3 K/GPa, are extracted for the out-of-plane and in-plane directions at T N1 . For T * we obtain ∂T * /∂p c =1.4 K/GPa. In particular we elucidate thermodynamic properties of the recently discovered skyrmion lattice phase and show that it is strongly enhanced by uniaxial pressure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

First Demonstration of Vertical 2T-nC FeRAM Hybrid Cell and its Scalability for High-Density 3D Ferroelectric Capacitor Memory

In this article, we perform a comprehensive experimental and modeling study into the scaling of vertical 2T-nC ferroelectric random-access memory (FeRAM) hybrid cell to demonstrate a high performance and high-density 3D capacitor memory. We demonstrate: i) first time successful integration of the vertical 2T-3C FeRAM cell by stacking the vertical metal-ferroelectricmetal (MFM) stack on top of Si CMOS transistors; ii) successful experimental operation of the memory cell, including the quasi-nondestructive read out (QNRO) of the polarization without write back after 106 read cycles; iii) the write bit line (WBL) heavily screens the coupling between neighboring strings, making it a minor concern; V ) aggressive stacking of the WBLs, i.e., number of MFMs in a string, could facilitate the self-boosting during write operation due to ferroelectric linear capacitance (CFE), which allows self-boosted inhibition for Vw/2 scheme and worsens the Vw/3 scheme as disturb increases to intolerable 2Vw/3; v) aggressive horizontal scaling significantly increases the read disturb to cells on neighboring planes due to capacitance between two WBLs (Cz).

42 ENGINEERING↗

A scanning resonator for probing quantum coherent devices

Superconducting resonators with high quality factors are extremely sensitive detectors of the complex impedance of materials and devices coupled to them. This capability has been used to measure losses in multiple different materials and, in the case of circuit quantum electrodynamics (circuit QED), has been used to measure the coherent evolution of multiple different types of qubits. Here, we report on the implementation of a scanning resonator for probing quantum coherent devices. Our scanning setup enables tunable coherent coupling to systems of interest without the need for fabricating on-chip superconducting resonators. We measure the internal quality factor of our resonator sensor in the single-photon regime to be >104 and demonstrate capacitive imaging using our sensor with zeptoFarad sensitivity and micron spatial resolution at milliKelvin temperatures. We then use our setup to characterize the energy spectrum and coherence times of multiple transmon qubits with no on-chip readout circuitry. Our experiments introduce a new tool for using circuit QED to measure existing and proposed qubit platforms.

47 OTHER INSTRUMENTATION↗

Interdigitated electrode geometry variation and external quantum efficiency of GaN/AlGaN-based metal-semiconductor-metal UV photodetectors

Aluminum gallium-nitride (Al x Ga 1–x N)-based metal–semiconductor–metal (MSM) ultraviolet photodetectors photodetectors (PD’s) have been successfully designed and fabricated using conventional photolithography techniques and tested experimentally to study their spectral sensitivity across different Al content, x, with x varying from 0 to 0.3. (Al)GaN-based UV PD’s have wide and tunable direct band gaps. The ability to easily select the photodetected wavelength by simply varying the aluminum content of GaN thin film (Al x Ga 1–x N) is a significant advantage of these group III–V compounds. Typically, MSM PD’s grown on (Al)GaN thin films result in ultrafast photodetection because of their highly mobile carriers. These devices are limited by the carrier transit time due to the negligible capacitance presented by the interdigitated fingers. Various electrode geometries were fabricated to investigate the influence of metal contact shapes on the devices’ performance indices with emphasis on the response speed and bias-voltage–independent efficiency. Here, coupled with the independently measured Hall mobility and electric field, we computed the carrier transit time of the devices to be as short as 1.31 ps and the bias-voltage–independent external quantum efficiencies were as high as 70% at 60 V for n-doped and intrinsic devices when operated in the reverse bias regime. Here, (Al x )Ga 1–x N photodetectors were designed to explore spectral sensitivity by altering x from 0 to 0.3.

42 ENGINEERING↗

Corn stover‐derived porous carbon for asymmetric supercapacitors

In this investigation, hydrothermal liquefaction‐derived hydrochar from pulverized corn stover (avg. particle size 1.12 mm and ash content 6.75 wt%) is chemically activated with aqueous KOH in the presence of Pluronic F127 surfactant and thermally treated further up to 800°C to generate porous carbon (POC) with higher specific surface area and porosity. POC obtained under different processing conditions is thoroughly characterized by Brunauer‐Emmett‐Teller surface area analyzer, Fourier transform infrared spectroscopy, Raman spectroscopy, scanning electron microscopy, and transmission electron microscopy. Metallic impurity present in POC is characterized by inductively coupled plasma mass spectrometry. Higher specific surface area POC is observed with the use of the surfactant during the activation process. Fully characterized POC is used with (Mn, Ti)‐mixed oxide electrode to fabricate asymmetric supercapacitor (ASC). Specific capacitance of ASC is measured by cyclic voltammetry (CV) technique using Gamry G‐300 potentiostat/galvanostat/ZRA. CV plots are obtained with different voltage scan rates whereas galvanostatic charge‐discharge plots are studied by varying the current density. Renewable corn stover‐derived POC prepared using Pluronic F127/KOH activation method is found to be highly suitable as an electrode material because of higher capacitance and electrochemical stability over 100 charging‐discharging cycles.

25 ENERGY STORAGE↗

Development of Tools for High Volume, High Speed Non-Destructive Inspection of Carbon Fiber Reinforced Plastics (Final Technical Report)

Current composite inspection technologies are tailored towards low-volume, high value parts. The needs and priorities for high-volume mainstream automotive production are very different from those of aerospace or similar sectors that have adopted advanced composite materials at scale. Beyond efficacy, the priority for inspection in the automotive sector is a short cycle time, which does not inhibit the rate of production. The target cycle time per part is 3 minutes, with a stretch goal of 1 minute. This report details the evaluation approach, the technologies of interest, and the performance of a number of inspection technologies applied to automotive carbon fiber composites.

, modal impact↗

Ferro-ionic states and domains morphology in Hf x Zr 1–x O 2 nanoparticles

Unique polar properties of nanoscale hafnia-zirconia oxides (Hf x Zr 1–x O 2 ) are of great interest for condensed matter physics, nanophysics, and advanced applications. These properties are connected (at least partially) to the ionic–electronic and electrochemical phenomena at the surface, interfaces, and/or internal grain boundaries. Here, we calculated the phase diagrams, dielectric permittivity, spontaneous polar, and antipolar ordering, as well as the domain structure morphology in Hf x Zr 1–x O 2 nanoparticles covered by ionic–electronic charge originating from surface electrochemical adsorption. We revealed that the ferro-ionic coupling supports the polar long-range order in nanoscale Hf x Zr 1–x O 2 , induces, and/or enlarges the stability region of the labyrinthine domains toward smaller sizes and smaller environmental dielectric constant at low concentrations of the surface ions. The ferro-ionic coupling causes the transition to the single-domain ferro-ionic state at high concentrations of the surface ions. We predict that the labyrinthine domain states, being multiple-degenerated, may significantly affect the emergence of the negative differential capacitance state in the nanograined/nanocrystalline Hf x Zr 1–x O 2 films.

36 MATERIALS SCIENCE↗

Wide-Bandgap Semiconductor Amplifiers for Fusion Plasma Heating and Control

This paper discusses power electronics developed under the ARPA-E GAMOW program to support nuclear fusion power production. The goal of this project was to develop and assess the potential for wide-bandgap (WBG) semiconductor devices in power electronics to enable high-efficiency and high-voltage solid-state systems for fusion plasma generation, heating, and control. The power electronics use an architecture in which multiple high-power boards can be combined to produce megawatt-level power, where using multiple boards provides high reliability. Two main areas of power electronics boards are developed in this project for fusion plasma heating and control applications: (1) pulse generation and control and (2) radiofrequency generation. The first area is for boards capable of driving high-voltage millisecond pulses at high duty cycles. The envisioned application of these pulses is in plasma control of magnetohydrodynamic instabilities, plasma position, and edge-localized modes. Pulse-width modulation allows for the implementation of a wide variety of linear and nonlinear control systems. The boards developed for this project could actuate control coils based on digital input signals and can be parallelized to provide megawatts of output power. The design of the pulse generator is a low-side load switch. A load switch was designed and constructed that utilized 2-kV-rated field-effect transistor (FET)-based cascodes developed by Qorvo under this project to perform initial testing of these cascodes. The second area is being implemented using class E amplifiers with WBG devices and a reactance steering network to handle inductive or capacitive plasma loads. Applications include ion cyclotron resonance heating (ICRH) and high-harmonic fast-wave (HHFW) heating. A class E reactance steering network is demonstrated in modeling and experiment with a resistive-inductive load that models an inductively-coupled plasma. Power combining of boards with class E reactance steering networks is also simulated and demonstrated experimentally, to enable scaling up to high power. Modeling of high-power-density cooling and remaining useful life is conducted to enable reliable, effectively cooled high-power electronics for fusion applications.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

High voltage transformer

A high-voltage transformer is disclosed. The high-voltage transformer includes a transformer core; at least one primary winding wound once or less than once around the transformer core; a secondary winding wound around the transformer core a plurality of times; an input electrically coupled with the primary windings; and an output electrically coupled with the secondary windings that provides a voltage greater than 1,1200 volts. In some embodiments, the high-voltage transformer has a stray inductance of less than 30 nH as measured on the primary side and the transformer has a stray capacitance of less than 100 pF as measured on the secondary side.

42 ENGINEERING↗

Numerical modeling of ion transport and adsorption in porous media: A pore-scale study for capacitive deionization desalination

In this report a pore-scale model is presented to simulate the dynamic ion transport and adsorption processes in porous electrodes used for capacitive deionization (CDI). The Stokes equation governing water flow is solved using the lattice Boltzmann method and Nernst-Planck equation describing ion transport is solved using the finite volume method. The ion adsorption process is considered at the surface of carbon electrodes. After validation against analytical solutions and published results, the model is used to study the coupled water flow, ion transport and adsorption in both two-dimensional and three-dimensional porous CDI electrodes at the pore scale. The effect of electrode microstructure, electrical potential and flow velocity on the adsorption processes is quantitatively investigated, and the relative importance of various parameters is determined. The presented model can be a powerful numerical tool to quantitatively analyze ion transport and adsorption in porous electrodes, and may provide useful information for the design and optimization of CDI electrodes and operating conditions for desired desalination efficiency, water throughput and cost.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Coupled memristor devices to enable feedback control and sensing of micro/nanoelectromechanical actuator and sensors

A MEMS apparatus with dynamic displacement control includes a MEMS parallel plate capacitor integrated with one or more memristors in a series configuration wherein a displacement is observable as a function of memristance, such that an upper electrode position is capable of being interpreted in a form of a resistance rather than a capacitance. The current is limited by said MEMS parallel plate capacitor restricting a change in the resistance of the memristor(s). The memristor(s) can be employed in some embodiments a sensor element to improve a MEMS operation range.

42 ENGINEERING↗

Physics-based compact modeling of electro-thermal memristors: Negative differential resistance, local activity, and non-local dynamical bifurcations

Leon Chua's Local Activity theory quantitatively relates the compact model of an isolated nonlinear circuit element, such as a memristor, to its potential for desired dynamical behaviors when externally coupled to passive elements in a circuit. However, the theory's use has often been limited to potentially unphysical toy models and analyses of small-signal linear circuits containing pseudo-elements (resistors, capacitors, and inductors), which provide little insight into required physical, material, and device properties. Furthermore, the Local Activity concept relies on a local analysis and must be complemented by examining dynamical behavior far away from the steady-states of a circuit. In this work, we review and study a class of generic and extended one-dimensional electro-thermal memristors (i.e., temperature is the sole state variable), re-framing the analysis in terms of physically motivated definitions and visualizations to derive intuitive compact models and simulate their dynamical behavior in terms of experimentally measurable properties, such as electrical and thermal conductance and capacitance and their derivatives with respect to voltage and temperature. Within this unified framework, we connect steady-state phenomena, such as negative differential resistance, and dynamical behaviors, such as instability, oscillations, and bifurcations, through a set of dimensionless nonlinearity parameters. In particular, we reveal that the reactance associated with electro-thermal memristors is the result of a phase shift between oscillating current and voltage induced by the dynamical delay and coupling between the electrical and thermal variables. We thus, demonstrate both the utility and limitations of local analyses to understand non-local dynamical behavior. Critically for future experimentation, the analyses show that external coupling of a memristor to impedances within modern sourcing and measurement instruments can dominate the response of the total circuit, making it impossible to characterize the response of an uncoupled circuit element for which a compact model is desired. However, these effects can be minimized by proper understanding of the Local Activity theory to design and utilize purpose-built instruments.

Brown, Timothy D. (ORCID:0000000347068355)↗

Strong interlayer charge transfer due to exciton condensation in an electrically isolated GaAs quantum well bilayer

We introduce a design of electrically isolated “floating” bilayer GaAs quantum wells (QW), in which application of a large gating voltage controllably and highly reproducibly induces charges that remain trapped in the bilayer after removal of the gating voltage. At smaller gate voltages, the bilayer is fully electrically isolated from external electrodes by thick insulating barriers. This design permits full control of the total and differential densities of two coupled 2D electron systems. The floating bilayer design provides a unique approach for studying systems inaccessible by simple transport measurements. It also provides the ability to measure the charge transfer between the layers, even when the in-plane resistivities of the 2D systems diverge. We measure the capacitance and inter-layer tunneling spectra of the QW bilayer with independent control of the top and bottom layer electron densities. Our measurements display strongly enhanced inter-layer tunneling current at v T =1, a signature of exciton condensation of a strongly interlayer-correlated bilayer system. With fully tunable densities of individual layers, the floating bilayer QW system provides a versatile platform to access previously unavailable information on the quantum phases in electron bilayer systems.

42 ENGINEERING↗

Magnetocapacitance effect and magnetoelectric coupling in type-II multiferroic HoFeWO 6

We have investigated the multiferroicity and magnetoelectric (ME) coupling in HoFeWO 6 . With a noncentrosymmetric polar structure (space group Pna2 1 ) at room temperature, this compound shows an onset of electric polarization with an antiferromagnetic ordering at the Néel temperature (T N ) of 17.8 K. The magnetic properties of the polycrystalline samples were studied by DC and AC magnetization and heat capacity measurements. The metamagnetic behavior at low temperatures was found to be directly related to the dielectric properties of the compound. In particular, field-dependent measurements of capacitance show a magnetocapacitance (MC) effect with double-hysteresis loop behavior in direct correspondence with the magnetization. Our x-ray diffraction results show the Pna2 1 structure down to 8 K and suggest the absence of a structural phase transition across T N . Soft x-ray absorption spectroscopy and soft x-ray magnetic circular dichroism (XMCD) measurements at the Fe L 2,3 and Ho M 4,5 edges revealed the oxidation state of Fe and Ho cations to be 3+. Fe L 2,3 XMCD further shows that Fe 3+ cations are antiferromagnetically ordered in a noncollinear fashion with spins arranged 90° with respect to each other. Our findings show that HoFeWO 6 is a type-II multiferroic exhibiting a MC effect. Furthermore, the observed MC effect and the change in polarization by the magnetic field, as well as their direct correspondence with magnetization, further support the strong ME coupling in this compound.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Defect Mode in Microwave Waveguide Bragg Structures with Metal Pins

A waveguide Bragg structure containing equidistant cylindrical pins that are galvanically coupled to a wide wall of the waveguide is used to implement frequency response functions characterized by the presence of a band gap. Characteristics of a defect mode of the microwave photonic crystal with a pin element as a defect with an n–i–p–i–n structure with controlled conductivity placed in the capacitive gap are experimentally studied and calculated. Controlled reflectance of a microwave signal with a dynamic range of greater than 50 dB is obtained at the frequency of the defect mode.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Influence of chemical strains on the electrocaloric response, polarization morphology, tetragonality, and negative-capacitance effect of ferroelectric core-shell nanorods and nanowires

Using Landau-Ginzburg-Devonshire (LGD) approach, we proposed the analytical description of the influence of chemical strains on spontaneous polarization and the electrocaloric response in ferroelectric core-shell nanorods. We postulate that the nanorod core presents a defect-free single-crystalline ferroelectric material, and elastic defects are accumulated in the ultrathin shell, where they can induce tensile or compressive chemical strains. Finite-element modeling (FEM) based on the LGD approach reveals transitions of domain-structure morphology induced by chemical strains in the Ba Ti O 3 nanorods. Namely, tensile chemical strains induce and support the single-domain state in the central part of the nanorod, while the curled domain structures appear near the unscreened or partially screened ends of the rod. The vortexlike domains propagate toward the central part of the rod and fill it entirely, when the rod is covered by a shell with compressive chemical strains above some critical value. The critical value depends on the nanorod sizes, aspect ratio, and screening conditions at its ends. Both analytical theory and FEM predict that the tensile chemical strains in the shell increase the nanorod polarization, lattice tetragonality, and electrocaloric response well above the values corresponding to the bulk material. The physical reason for the increase is strong electrostriction coupling between the mismatch-type elastic strains induced in the core by chemical strains in the shell. Comparison with earlier XRD data confirmed an increase of the tetragonality ratio in tensile Ba Ti O 3 nanorods compared to the bulk material. Obtained analytical expressions, which are suitable for the description of strain-induced changes in a wide range of multiaxial ferroelectric core-shell nanorods and nanowires, can be useful for strain engineering of advanced ferroelectric nanomaterials for energy storage, harvesting, electrocaloric applications, and negative capacitance elements. Published by the American Physical Society 2024

36 MATERIALS SCIENCE↗

Microgrid Tiered Circuits Effects for a Planned Housing Community in Puerto Rico

Puerto Rico faced a double strike from hurricanes Irma and Maria in 2017. The resulting damage required a comprehensive rebuild of electric infrastructure. There are plans and pilot projects to rebuild with microgrids to increase resilience. This paper provides a techno-economic analysis technique and case study of a potential future community in Puerto Rico that combines probabilistic microgrid design analysis with tiered circuits in building energy modeling. Tiered circuits in buildings allow electric load reduction via remote disconnection of non-critical circuits during an emergency. When coupled to a microgrid, tiered circuitry can reduce the chances of a microgrid's storage and generation resources being depleted. The analysis technique is applied to show 1) Approximate cost savings due to a tiered circuit structure and 2) Approximate cost savings gained by simultaneously considering resilience and sustainability constraints in the microgrid optimization. The analysis technique uses a resistive capacitive thermal model with load profiles for four tiers (tier 1-3 and non-critical loads). Three analyses were conducted using: 1) open-source software called Tiered Energy in Buildings and 2) the Microgrid Design Toolkit. For a fossil fuel based microgrid 30% of the total microgrid costs of 1.18 million USD were calculated where the non-tiered case keeps all loads 99.9% available and the tiered case keeps tier 1 at 99.9%, tier 2 at 95%, tier 3 at 80% availability, with no requirement on non-critical loads. The same comparison for a sustainable microgrid showed 8% cost savings on a 5.10 million USD microgrid due to tiered circuits. The results also showed 6-7% cost savings when our analysis technique optimizes sustainability and resilience simultaneously in comparison to doing microgrid resilience analysis and renewables net present value analysis independently. Though highly specific to our case study, similar assessments using our analysis technique can elucidate value of tiered circuits and simultaneous consideration of sustainability and resilience in other locations.

building energy modeling↗