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Postsintering process increases yield of double-layer metal conductors to almost 100 percent. When wafers containing double-metalized chips are sintered, metal layers react with oxide film remaining in insulation layer holes, breaking it up so that it no longer impedes electric current. Cooling also mechanically disrupts oxide film.
Continued progress is reported toward development of a silicon on garnet technology which would allow fabrication of advanced detection and signal processing circuits on bubble memories. The first integrated detectors and propagation patterns have been designed and incorporated on a new mask set. In addition, annealing studies on spacer layers are performed. Based on those studies, a new double layer spacer is proposed which should reduce contamination of the silicon originating in the substrate. Finally, the magnetic sensitivity of uncontaminated detectors from the last lot of wafers is measured. The measured sensitivity is lower than anticipated but still higher than present magnetoresistive detectors.
It is well known that the behavior of III-V compound based solar cells is largely controlled by their surface, since the majority of light generated carriers (63% for GaAs and 79% for InP) are created within 0.2 mu m of the surface of the illuminated cell. Consequently, the always observed high surface recombination velocity (SRV) on these cells is a serious limiting factor for their high efficiency performance, especially for those with p-n junction made by either thermal diffusion or ion implantation. A good surface passivation layer, ideally a grown oxide as opposed to a deposited one, will cause a significant reduction in the SRV without adding interface problems, thus improving the performance of III-V compound based solar cells. Another significant benefit to the overall performance of the solar cells can be achieved by a substantial reduction of their large surface optical reflection by the use of a well designed antireflection (AR) coating. In this paper, we demonstrate the effectiveness of using a chemically grown thermally and chemically stable oxide, not only for surface passivation but also as an integral part of a 3-layer AR coating for thermally diffused p+n InP solar cells. A phosphorus-rich interfacial oxide, In(PO3)3, is grown at the surface of the p+ emitter using an etchant based on HNO3, o-H3PO4 and H2O2. This oxide has the unique properties of passivating the surface as well as serving as an efficient antireflective layer yielding a measured record high AMO open-circuit voltage of 890.3 mV on a thermally diffused InP(Cd,S) solar cell. Unlike conventional single layer AR coatings such as ZnS, Sb2O3, SiO or double layer AR coatings such as ZnS/MgF2 deposited by e-beam or resistive evaporation, this oxide preserves the stoichiometry of the InP surface. We show that it is possible to design a three-layer AR coating for a thermally diffused InP solar cell using the In(PO3)3 grown oxide as the first layer and Al2O3 and MgF2 as the second and third layers respectively, so as to yield an overall theoretical reflectance of less than 2%. Since chemical oxides are readily grown on III-V semiconductors materials, the technique of using the grown oxide layer to both passivate the surface as well as serve as the first of a multilayer AR coating should work well for all III-V compound-based solar cells.
It is well known that the behavior of III-V compound based solar cells is largely controlled by their surface, since the majority of light generated carriers (63% for GaAs and 79% for InP) are created within 0.2 microns of the illuminated surface of the cell. Consequently, the always observed high surface recombination velocity (SRV) on these cells is a serious limiting factor for their high efficiency performance, especially for those with the p-n junction made by either thermal diffusion or ion implantation. A good surface passivation layer, ideally, a grown oxide as opposed to a deposited one, will cause a significant reduction in the SRV without adding interface problems, thus improving the performance of III-V compound based solar cells. Another significant benefit to the overall performance of the solar cells can be achieved by a substantial reduction of their large surface optical reflection by the use of a well designed antireflection (AR) coating. In this paper, we demonstrate the effectiveness of using a chemically grown, thermally and chemically stable oxide, not only for surface passivation but also as an integral part of a 3- layer AR coating for thermally diffused p(+)n InP solar cells. A phosphorus-rich interfacial oxide, In(PO3)3, is grown at the surface of the p(+) emitter using an etchant based on HNO3, o-H3PO4 and H2O2. This oxide has the unique properties of passivating the surface as well as serving as a fairly efficient antireflective layer yielding a measured record high AM0, 25 C, open-circuit voltage of 890.3 mV on a thermally diffused InP(Cd,S) solar cell. Unlike conventional single layer AR coatings such as ZnS, Sb2O3, SiO or double layer AR coatings such as ZnS/MgF2 deposited by e-beam or resistive evaporation, this oxide preserves the stoichiometry of the InP surface. We show that it is possible to design a three-layer AR coating for a thermally diffused InP solar cell using the In(PO3)3 grown oxide as the first layer and Al2O3, MgF2 or ZnS, MgF2 as the second and third layers respectively, so as to yield an overall theoretical reflectance of less than 2%. Since chemical oxides are readily grown on III-V semiconductor materials, the technique of using the grown oxide layer to both passivate the surface as well as serve as the first of a multilayer AR coating, should work well for essentially all III-V compound-based solar cells.
We report observations from the Magnetospheric Multiscale satellites of parallel electric fields (E (sub parallel)) associated with magnetic reconnection in the subsolar region of the Earth's magnetopause. E (sub parallel) events near the electron diffusion region have amplitudes on the order of 100 millivolts per meter, which are significantly larger than those predicted for an antiparallel reconnection electric field. This Letter addresses specific types of E (sub parallel) events, which appear as large-amplitude, near unipolar spikes that are associated with tangled, reconnected magnetic fields. These E (sub parallel) events are primarily in or near a current layer near the separatrix and are interpreted to be double layers that may be responsible for secondary reconnection in tangled magnetic fields or flux ropes. These results are telling of the three-dimensional nature of magnetopause reconnection and indicate that magnetopause reconnection may be often patchy and/or drive turbulence along the separatrix that results in flux ropes and/or tangled magnetic fields.
Short-circuit current degradation of electron irradiated double-layer antireflective-coated cells after 3000 hours ultraviolet (UV) exposure exceeds 3 percent; extrapolation of the data to 10(exp 5) hours (11.4 yrs.) gives a degradation that exceeds 10 percent. Significant qualitative and quantitative differences in degradation were observed in cells with double- and single-layer antireflective coatings. The effects of UV-source age were observed and corrections were made to the data. An additional degradation mechanism was identified that occurs only in previously electron-irradiated solar cells since identical unirradiated cells degrade to only 6 +/- 3 percent when extrapolated 10(exp 5) hours of UV illumination.
Results of analysis on damage distribution of a crack layer, in a model material, supported the self-similarity hypothesis of damage evolution which has been adopted by the crack layer theory. On the basis of measurements of discontinuity density and the double layer potential technique, a solution to the crack damage interaction problem has been developed. Evaluation of the stress intensity factor illustrated the methodology. Analysis of experimental results showed that Arrhenius type constitutive relationship described very well the expansion of the active zone of a crack layer.
Na lidar observations indicate that at high latitudes in summer the neutral Na layer frequently attains a double-peaked structure. The main layer with a maximum near 90 km altitude is supplemented by a secondary, narrow layer near 95 km altitude. Results are presented concerning secondary sodium layers. It appears likely that the formation of secondary Na layers observed frequently above the lidar site is not solely a 'sodium phenomenon', but part of a more comprehensive layering process for metal atoms and ions. Na(+)/Na density ratios close to 0.5 near the peaks of both the main and secondary layers are derived.
The feasibility of fabricating space resistant, high efficiency, light weight, low cost GaAs shallow homojunction solar cells for space application is investigated. The material preparation of ultrathin GaAs single crystal layers, and the fabrication of efficient GaAs solar cells on bulk GaAs substrates are discussed. Considerable progress was made in both areas, and conversion efficiency about 16% AMO was obtained using anodic oxide as a single layer antireflection coating. A computer design shows that even better cells can be obtained with double layer antireflection coating. Ultrathin, high efficiency solar cells were obtained from GaAs films prepared by the CLEFT process, with conversion efficiency as high as 17% at AMI from a 10 micrometers thick GaAs film. A organometallic CVD was designed and constructed.
The effects on double-probe electric field measurements induced by electron density and temperature gradients are investigated. We show that on some occasions such gradients may lead to marked spurious electric fields if the probes are assumed to lie at the same probe potential with repect to the plasma. The use of a proper bias current will decrease the magnitude of such an error. When the probes are near the plasma potential, the magnitude of these error signals, delta Epsilon, can vary as delta Epsilon approx. T(sub e)(Delta n(sub e)/n(sub e)) + 0.5 Delta T(sub e), where T(sub e) is the electron temperature, Delta n(sub e)/ n(sub e) the relative electron density variation between the two sensors, and Delta T(sub e) the electron temperature difference between the two sensors. This not only implies that the error signals will increase linearly with the density variations but also that such signatures grow with Delta T(sub e) i.e., such effects are 10 times larger in a 10-eV plasma than in a 1-eV plasma. This type of error is independent of the probe separation distance provided the gradient scale length is much larger than the distance. The largest errors occur when the probes are near to the plasma potential. During the crossing of a small structure (e.g, a double layer) the error signal appears as a bipolar signature. Our analysis shows that errors in double-probe measurements caused by plasma gradients are not significant at large scale (much greater than 1 km) plasma boundaries, and may only be important in cases where small-scale (less than 1 km), internal gradient structures exist. Bias currents tailored for each plasma parameter regime (i.e., variable bias current) would improve the double-probe response to gradient effects considerably.
The head-on collision of equal sized drops is studied by full numerical simulations. The Navier-Stokes equations are solved for fluid motion both inside and outside the drops using a front tracking/finite difference technique. The drops are accelerated toward each other by a body force that is turned off before the drops collide. When the drops collide, the fluid between them is pushed outward leaving a thin later bounded by the drop surface. This layer gets progressively thinner as the drops continue to deform and in several of the calculations this double layer is artificially removed once it is thin enough, thus modeling rupture. If no rupture takes place, the drops always rebound, but if the film is ruptured the drops may coalesce permanently or coalesce temporarily and then split again.
This work considers the problem of elastic interaction of a macrocrack with an array of microcracks in the vicinity of the macrocrack tip. Using the double layer potential techniques, the solution to the problem within the framework of the plane problem of elastostatics has been obtained. Three particular problems of interest to fracture mechanics have been analyzed. It follows from analysis that microcrack array can either amplify or reduce the resulting stress field of the macrocrack-microcrack array system depending on the array's configuration. Using the obtained elastic solution the energy release rate associated with the translational motion of the macrocrack-microcrack array system has been evaluated.
Thermocapillary convection is studied in two immiscible liquid layers with one free surface, one liquid/liquid interface, and differential heating applied parallel to the interfaces. An analytical solution is introduced for infinite horizontal layers. The defining parameter for the flow pattern is lambda, the ratio of the temperature coefficient of the interfacial tension to that of the surface tension. Four different flow patterns exist under zero gravity conditions. 'Halt' conditions which halt the fluid motion in the lower encapsulated liquid layer have been found. A numerical experiment is carried out to study effects of vertical end walls on the double layer convection in a 2D cavity. The halt condition obtained from the analytical study is found to be valid in the limit of small Reynolds numbers. The flow in the encapsulated liquid layer can be suppressed substantially.
In a continual mass optimization effort for the Orion vehicle by NASA and its prime contractor Lockheed Martin Space, along with the European Space Agency (ESA) and its contractors Airbus and Thales Alenia Space-Italy (TAS-I), a series of shield characterization shots have been performed to quantify the ballistic enhancement of a single-layer of Kevlar® in multi-layer insulation (MLI). This enhanced MLI is part of Orion’s propulsion subsystem, and it is planned to replace a double-layer Kevlar® configuration starting at the Artemis IV mission. This effort has included fifty-two shield characterization shots for five different shield configurations over the four Orion propellant storage vessels. These storage vessels are located in the European Service Module (ESM). This shield characterization has been managed by the Hypervelocity Impact Technology (HVIT) group in NASA Astromaterials Research and Exploration Sciences at Johnson Space Center (JSC) for the NASA Engineering and Safety Center (NESC) and the Multi-Purpose Crew Vehicle (MPCV) program office in coordination with Lockheed Martin Space and Thales Alenia Space-Italy (TAS-I). The shield characterization has used the two-stage, light-gas-gun at the Remote Hypervelocity Test Laboratory (RHTL) of NASA JSC White Sands Test Facility (WSTF) for acceleration of projectiles to representative orbital impact speeds. From this shield characterization effort, a revised ballistic limiting equation (BLE) has been developed for each of the five representative shielding configurations of the ESM pressure vessels. This document provides a brief description of the shield configurations considered for the Orion program and the shield characterization findings. These results are compared to the assumed BLE for each configuration going into the Artemis missions that utilize this version of ballistic enhanced MLI. The models are integrated into a fourteen day High Lunar Orbit (HLO) mission as a representative reliability prediction impact for Orion, and it has been found that the predicted risk of a loss-of-crew (LOC) event is actually a little less than half of the assumed value that launched this design modification opportunity.
In the course of this work, 5 mm diameter InGaAs pin detectors were produced which met or exceeded all of the goals of the program. The best results achieved were: shunt resistance of over 300 K ohms; rise time of less than 300 ns; contact resistance of less than 20 ohms; quantum efficiency of over 50 percent in the 0.5 to 1.7 micron range; and devices were maintained and operated at 125 C without deterioration for over 100 hours. In order to achieve the goals of this program, several major technological advances were realized, among them: successful design, construction and operation of a hydride VPE reactor capable of growing epitaxial layers on 2 inch diameter InP substrates with a capacity of over 8 wafers per day; wafer processing was upgraded to handle 2 inch wafers; a double layer Si3N4/SiO2 antireflection coating which enhances response over the 0.5 to 1.7 micron range was developed; a method for anisotropic, precisely controlled CH4/H2 plasma etching for enhancement of response at short wavelengths was developed; and electronic and optical testing methods were developed to allow full characterization of detectors with size and spectral response characteristics. On the basis of the work and results achieved in this program, it is concluded that large size, high shunt resistance, high quantum efficiency InGaAs pin detectors are not only feasible but also manufacturable on industrial scale. This device spans a significant portion of visible and near infrared spectral range and it will allow a single detector to be used for the 0.5 to 1.7 micron spectral region, rather than the presently used silicon (for 0.5 to 1.1 microns) and germanium (0.8 to 1.7 microns).
Ion implantation of bubble garnets can lower the Curie temperature by 70 C or more, thus limiting high temperature operation of devices with ion-implanted propagation patterns. Therefore, double-layer materials were made with a conventional 2-micron bubble storage layer capped by an ion-implantable drive layer of high Curie temperature, high magnetostriction material. Contiguous disk test patterns were implanted with varying doses of a typical triple implant. Quality of propagation was judged by quasistatic tests on 8-micron period major and minor loops. Variations of magnetization, uniaxial anisotropy, implant dose, and magnetostriction were investigated to ensure optimum flux matching, good charged wall coupling, and wide operating margins. The most successful drive layer compositions were in the systems (SmDyLuCa)3(FeSi)5O12 and (BiGdTmCa)3(FeSi)5O12 and had Curie temperatures 25-44 C higher than the storage layers.
A feasibility study is presented concerning an application of a superconducting linear synchronous motor (LSM) to a large-scale rocket launcher, whose acceleration guide tube of LSM armature windings is constructed 1,500 meters under the ground. The rocket is released from the linear launcher just after it gets to a peak speed of about 900 kilometers per hour, and it flies out of the guide tube to obtain the speed of 700 kilometers per hour at the height of 100 meters above ground. The linear launcher is brought to a stop at the ground surface for a very short time of 5 seconds by a quick control of deceleration. Very large current variations in the single-layer windings of the LSM armature, which are produced at the higher speed region of 600 to 900 kilometers per hour, are controlled successfully by adopting the double-layer windings. The proposed control method makes the rocket launcher ascend stably in the superconducting LSM system, controlling the Coriolis force.
The goals of this research are (1) to prove the concept feasibility of a direct-drive electric propulsion system, and (2) to evaluate the performance and characteristics of a Russian TAL (Thruster with Anode Layer) operating in a long-pulse mode, powered by a capacitor-based power source developed at Space Power Institute. The TAL, designated D-55, is characterized by an external acceleration zone and is powered by a unique chemical double layer (CDL) capacitor bank with a capacitance of 4 F at a charge voltage of 400 V. Performance testing of this power supply on the TAL was conducted at NASA Lewis Research Center in Cleveland, OH. Direct thrust measurements of the TAL were obtained at CDL power levels ranging from 450 to 1750 W. The specific impulse encompassed a range from 1150 s to 2200 s, yielding thruster system efficiencies between 50 and 60%. Preliminary mission analysis of the CDL direct-drive concept and other electric propulsion options was performed for the ORACLE spacecraft in 6am/6pm and 12am/12pm, 300 km sun-synchronous orbits. The direct-drive option was competitive with the other systems by increasing available net mass between 5 and 42% and reducing two-year system wet mass between 18 and 63%. Overall, the electric propulsion power requirements for the satellite solar array were reduced between 57 and 91% depending oil the orbit evaluated The direct-drive, CDL capacitor-based concept in electric propulsion thus promises to be a highly-efficient, viable alternative for satellite operations in specific near-Earth missions.