Search NASA⌕ Search

SEARCH · Search NASA

Results for “ELECTRON GAS”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Electron mobility in modulation-doped heterostructures

A model for electron mobility in a two-dimensional electron gas confined in a triangular well was developed. All major scattering processes (deformation potential and piezoelectric acoustic, polar optical, ionized impurity, and alloy disorder) were included, as well as intrasubband and intersubband scattering. The model is applied to two types of modulation-doped heterostructures, namely GaAs-GaAlAs and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As. In the former case, phonons and remote ionized impurities ultimately limit the mobility, whereas in the latter, alloy disorder is a predominant scattering process at low temperatures. The calculated mobilities are in very good agreement with recently reported experimental characteristics for both GaAs-Ga(1-x)Al(x)As and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As modulation-doped heterostructures.

Walukiewicz, W.↗
NASA NTRS1985

Formation and detection of high latitude ionospheric irregularities

Measurements of Total Electron Content (TEC) and airglow variations show that large scale plasma patches appearing in the high-latitude ionsophere have irregular structures evidenced by the satellite phase and amplitude scintillations. Whistler waves, intense quasi-DC electric field, and atmospheric gravity waves can become potential sources of various plamsa instabilities. The role of thermal effects in generating ionospheric irregularities by these sources is discussed. Meter-scale irregularities in the ionospheric E and F regions can be excited parametrically with lower hybrid waves by intense whistler waves. Ohmic dissipation of Pedersen current in the electron gas is able to create ionospheric F region irregularities in plasma blobs or plasma patches (i.e., high ambient plasma density environment) with broad scale lengths ranging from tens of meters to a few kilometers. Through the neutral-charged particle collisions, gravity waves can excite large-scale (less than tens of kilometers) ionospheric irregularities simultaneously with forced ion acoustic modes in the E region. The large-scale ionospheric density fluctuations produced in the E region can extend subsequently alogn the earth's magnetic field to the F region and the topside ionospheric regions. These mechanisms characterized by various thermal effects can contribute additively with other processes to the formation of ionospheric irregularities in the high latitude region.

Lee, M. C.↗
NASA NTRS1986

Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors

High-performance pseudomorphic In(y)Ga(1-y)As/Al0.15-Ga0.85As y = 0.05-0.2 MODFET's grown by MBE have been characterized at dc (300 and 77 K) and RF frequencies. Transconductances as high 310 and 380 mS/mm and drain currents as high as 290 and 310 mA/mm were obtained at 300 and 77 K, respectively, for 1-micron gate lengths and 3-micron source-drain spacing devices. Lack of persistent trapping effects, I-V collapse, and threshold voltage shifts observed with these devices are attributed to the use of low mole fraction Al(x)Ga(1-x)As while still maintaining two-dimensional electron gas concentrations of about 1.3 x to the 12th per sq cm. Detailed microwave S-parameter measurements indicate a current gain cut-off frequency of 24.5 GHz when y = 0.20, which is as much as 100 percent better than similar GaAs/AlGaAs MODFET structures, and a maximum frequency of oscillation of 40 GHz.

Ketterson, Andrew A.↗
NASA NTRS1986

Temporal features of the refilling of a plasmaspheric flux tube

The refilling of plasmaspheric flux tubes was studied by assuming that the protonosphere provides an ionospheric boundary where the H(+) density can be assumed; the supersonic flow in the flux tube is driven by the depletion of the plasma from the flux tube, while the base density and pressure in the protonosphere remain constant. The time-dependent continuity and momentum equations for the H(+) ions were solved. The electron gas was assumed to obey the Boltzmann law, and the proton gas was assumed to be isothermal. In agreement with the postulate of Banks et al. (1971), it was found that an important feature of the refilling is the formation of a shock pair at the equator; as the shocks propagate toward the ionosphere, the refilling occurs. Depending on the density at the ionospheric boundaries, a fair agreement was found between the refilling rates obtained for L = 6.6 and those from the GEOS 2 observations.

Singh, Nagendra↗
NASA NTRS1987

Pseudomorphic InGaAs/AlGaAs modulation-doped FET's with reduced low-frequency noise and thermally stable performance

A high-performance MODFET structure grown by MBE with the incorporation of a single quantum well In(0.15)Ga(0.85)As layer for the transport of two-dimensional electron gas has been critically examined for its thermal stability at 80 K and low-frequency noise form 0.01 to 10 to the 8th Hz. Experimental results indicate that the behavior of this device in both these respects is much superior when compared with the same behavior of conventional MODFETs. A maximum low-field carrier mobility of 29,000 sq cm/s at 80 K and an average carrier saturation velocity of 2 x 10 to the 7th cm/s at 300 K in a 1-micron gate device clearly indicate that the quality of the pseudomorphic quantum well (InGaAs) layer is either comparable or better than that of the usual GaAs buffer layer. The deep level spectra, obtained through photo-FET measurements, and the low-frequency noise spectra at different temperatures obtained for the new pseudomorphic and conventional MODFET's have clearly indicated that contributions from various deep levels present in the new structure are significantly reduced.

Liu, Shih-Ming↗
NASA NTRS1987

Anisotropic transport in modulation-doped quantum-well structures

Anisotropic electron transport has been observed in GaAs modulation-doped quantum wells grown by molecular-beam epitaxy on a thick (001) Al(0.3)Ga(0.7)As buffer grown at 620 C. Thicker quantum wells (150, 200, and 300 A) show progressively less anisotropy, which vanishes for a 300-A quantum well. The degree of anisotropy is also reduced or eliminated by suspending growth of the Al(0.3)Ga(0.7)As for a period of 300 s prior to growing the GaAs quantum well. Growing the Al(0.3)Ga(0.7)As buffer at higher temperatures (680 C) also reduces the degree of anisotropy. Higher two-dimensional electron gas sheet densities result in less anisotropy.The anisotropy is eliminated by replacing the thick Al(0.3)Ga(0.7)As buffer with a periodic multilayer structure comprising 15 A of GaAs and 200 A of Al(0.3)Ga(0.7)As. The degree of anisotropy is related to the thickness and growth parameters of the Al(0.3)Ga(0.7)As layer grown just prior to the growth of the GaAs.

Radulescu, D. C.↗
NASA NTRS1987

Collisional excitation of an asymmetric rotor, silicon dicarbide

Rotational excitation rates have been computed for the asymmetric top molecule SiC2 in collisions with low-energy He atoms. The intermolecular forces were obtained from an electron gas model, and collision dynamics were treated within the infinite-order sudden approximation. Total excitation rates, i.e., summed over final levels, are expected to be accurate to about 50 percent, and the larger state-to-state rates are likely to be within a factor of about 2 of the correct values, although some of the smaller (and less important) rates may be less accurate. These rates are also thought to reflect, within this level of accuracy, rates for excitation by collisions with H2 molecules.

Palma, Amedeo↗
NASA NTRS1987

Collisional excitation of interstellar sulfur dioxide

State-to-state rotational excitation rates for the asymmetric top molecule SO2 in collisions with low-energy He atoms have been computed. The intermolecular forces were obtained from an electron gas model, and collision dynamics were treated with the finite-order sudden approximation. The total excitation rate is probably accurate to better than 50 percent; however, individual state-to-state rates may be in error by factors of 2 or 3, and some smaller rates may be accurate only to an order of magnitude. Present results are expected to reflect within the same level of accuracy rates for excitation by collisions with H2 molecules.

Palma, Amedeo↗
NASA NTRS1987

Effects of substrate misorientation and background impurities on electron transport in molecular-beam-epitaxial grown GaAs/AlGaAs modulation-doped quantum-well structures

The effects of substrate misorientation off the (001) plane and of background impurities on electron transport in MBE-grown GaAs/AlGaAs modulation-doped superlattice-buffered quantum-well structures were investigated. Low-field transport data were obtained on GaAs/AlGaAs structures grown on substrates oriented 0, 2, 4, and 6.5 deg off the (001) plane towards either (111)A or (111)B. It is shown that the low-field two-dimensional electron gas (2DEG) mobility is a function of the angle and direction of the substrate orientation, and that the 2DEG mobility is a function of the direction of the applied electric field in the GaAs quantum well. The anisotropy in the 2DEG mobility is also a function of the tilt angle and tilt azimuth direction of the substrate from the (001) plane. In addition, it is shown that the amount of interface scattering from the inverted interface is a sensitive function of the amount of background impurities in the MBE machine.

Radulescu, D. C.↗
NASA NTRS1989

Surface structure of neutron stars with high magnetic fields

The equation of state of cold dense matter in strong magnetic fields is calculated in the Thomas-Fermi and Thomas-Fermi-Dirac approximations. For use in the latter calculation, a new expression is derived for the exchange energy of the uniform electron gas in a strong magnetic field. Detailed calculations of the density profile in the surface region of a neutron star are described for a variety of equations of state, and these show that the surface density profile is strongly affected by the magnetic field, irrespective of whether or not matter in a magnetic field has a condensed state bound with respect to isolated atoms. It is also shown that, as a consequence of the field dependence of the screening potential, magnetic fields can significantly increase nuclear reaction rates.

Fushiki, I.↗
NASA NTRS1990

Selective equilibration among the current-carrying states in the quantum Hall regime

The Hall resistance of a two-dimensional electron gas is measured with gated probes to determine the extent of equilibration among the N current-carrying states in the quantum Hall regime. After traveling macroscopic distances, current injected into the first state is equilibrated among the N - 1 lowest states but equilibration into the highest state varies strongly across the Hall plateau. This is attributed to a change in the Nth state from being localized within a magnetic length of the edge to substantially extending into the sample.

Alphenaar, B. W.↗
NASA NTRS1990

Surface electrons in inverted layers of p-HgCdTe

Anodic oxide passivation of p-type HgCdTe generates an inversion layer. Extremely high Hall mobility data for electrons in this layer indicated the presence of a two-dimensional electron gas. This is verified by use of the Shubnikov-de Haas effect from 1.45 to 4.15 K. Data are extracted utilizing a numerical second derivative of dc measurement. Three sub-bands are detected. Their relative occupancies are in excellent agreement with theory and with experimental results obtained on anodic oxide as accumulation layers of n-type HgCdTe. The effective mass derived is comparable to what was expected.

Schacham, Samuel E.↗
NASA NTRS1990

Water group plasma in the magnetosphere of Saturn

The paper deals with the question of the composition and spatial distribution of water group plasma in the magnetosphere of Saturn. It is suggested that the problem of the coexistence of neutral atomic hydrogen and such a plasma can be resolved if the dominant ion is taken to be H2O(+) or H3O(+). It is also suggested that this ion may provide a means of radiative cooling of the inner magnetosphere plasma which is possibly easier to realize than transport of nitrogen from Titan. As a source for this plasma in the region inward of the icy satellites, the ring atmosphere is suggested. The depleted plasma density in the domain between the Dione-Tethys torus and the ring plane crossing of Voyager may provide an explanation for the survival of the E-ring. Data are presented which indicate that H2O(+) or H3O(+) is also a favored candidate in the outer magnetosphere and that it can diffuse without loss through the hot electron gas.

Eviatar, Aharon↗
NASA NTRS1991

A resistive-gate Al(0.3)Ga(0.7)As/GaAs 2DEG CCD with high charge-transfer efficiency at 1 GHz

The fabrication and performance of an Al(0.3)Ga(0.7)As/GaAs modulation-doped resistive-gate CCD are reported. The two-dimensional electron gas (2DEG) CCD, implemented as a 32-stage four-phase delay line, was tested at both low (1-13 MHz) and high (0.6-1.0 GHz) frequency. It exhibits a room-temperature charge-transfer efficiency (CTE) of better than 0.999 at clock frequencies from 10 MHz up to 1 GHz without a fat-zero signal and is limited by dark current below 10 MHz. The high-frequency test showed no CTE degradation up to 1-GHz operation. The CTE degraded at frequencies lower than approximately 5 MHz due to dark current. The charge-handling capability and minimum clock swing of the resistive-gate 2DEG CCD are calculated.

Song, J.-I.↗
NASA NTRS1990

GaAs CCD readout for engineered bandgap detectors

GaAs and related heterostructure charge-coupled devices (CCDs) for detector array readout multiplexer applications are described. Features of resistive-gate CCDs are compared with capacitive-gate CCDs for this application. Design examples of GaAs CCD readouts for linear and two-dimensional detector arrays with different detection methods and signal coupling schemes are described. Recent progress in two-dimensional electron gas (2DEG) Al(0.3)Ga(0.7)As/GaAs resistive-gate CCDs is also presented. The 2DEG resistive-gate CCD conventional buried-channel GaAs CCD.

Song, J.-I.↗
NASA NTRS1993

Thermodynamic data for fifty reference elements

This report is a compilation of thermodynamic functions of 50 elements in their standard reference state. The functions are C(sub p)(sup 0), (H(sup 0)(T) - H(sup 0)(0)), S(sup 0)(T), and -(G(sup 0)(T) - H(sup 0)(O)) for the elements Ag, Al, Ar, B, Ba, Be, Br2, C, Ca, Cd, Cl2, Co, Cr, Cs, Cu, F2, Fe, Ge, H2, He, Hg, I2, K, Kr, Li, Mg, Mn, Mo, N2, Na, Nb, Ne, Ni, O2, P, Pb, Rb, S, Si, Sn, Sr, Ta, Th, Ti, U, V, W, Xe, Zn, and Zr. Deuterium D2 and electron gas e(sup -) are also included. The data are tabulated as functions of temperature as well as given in the form of least-squares coefficients for two functional forms for C(sub p)(sup 0) with integration constants for enthalpy and entropy. One functional form for C(sub p)(sup 0) is a fourth-order polynomial and the other has two additional terms, one with T(exp -1) and the other with T(exp -2). The gases Ar, D2, e(sup -), H2, He, Kr, N2, Ne, O2, and Xe are tabulated for temperatures from 100 to 20,000 K. The remaining gases Cl2 and F2 are tabulated from 100 to 6000 K and 1000 to 6000 K. The second functional form for C(sub p)(sup 0) has an additional interval from 6000 to 20,000 K for the gases tabulated to 20,000 K. The fits are constrained so that the match at the common temperature endpoints. The temperature ranges for the condensed species vary with range of the data, phase changes, and shapes of the C(sub p)(sup 0) curves.

Mcbride, Bonnie J.↗
NASA NTRS1992

A Schottky/2-DEG varactor diode for millimeter and submillimeter wave multiplier applications

A new Schottky diode is investigated for use as a multiplier element in the millimeter and submillimeter wavelength regions. The new diode is based on the Schottky contact at the edge of a 2-dimensional electron gas (2-DEG). As a negative voltage is applied to the Schottky contact, the depletion layer between the Schottky contact and the 2-DEG expands and the junction capacitance decreases, resulting in a nonlinear capacitance-voltage characteristic. In this paper, we outline the theory, design, fabrication, and evaluation of the new device. Recent results include devices having cutoff frequencies of 1 THz and above. Preliminary multiplier results are also presented.

Peatman, W. C. B.↗
NASA NTRS1993

Squeezed states of electrons and transitions of the density of states

Electron systems which have low dimensional properties have been constructed by squeezing the motion in zero, one, or two-directions. An isolated quantum dot is modeled by a potential box with delta-profiled, penetrable potential walls embedded in a large outer box with infinitely high potential walls which represent the world function with respect to vacuum. We show the smooth crossover of the density of states from the three-dimensional to the quasi-zero dimensional electron gas.

Lee, Seung Joo↗