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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques

The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with sub-nanometer precision, typically for quantum physics demonstrations, and to dope silicon past the solid-solubility limit, with potential applications in microelectronics and plasmonics. However, this process, which we call atomic precision advanced manufacturing (APAM), currently lacks the throughput required to develop sophisticated applications because there is no proven scalable hydrogen lithography pathway. Here, we demonstrate and characterize an APAM device workflow where STM lithography has been replaced with photolithography. An ultraviolet laser is shown to locally heat silicon controllably above the temperature required for hydrogen depassivation. STM images indicate a narrow range of laser energy density where hydrogen has been depassivated, and the surface remains well-ordered. A model for photothermal heating of silicon predicts a local temperature which is consistent with atomic-scale STM images of the photo-patterned regions. Finally, a simple device made by exposing photo-depassivated silicon to phosphine is found to have a carrier density and mobility similar to that produced by similar devices patterned by STM.

42 ENGINEERING↗
DOE OSTI2023

Defect Chemistry and Doping of Ultrawide Band Gap (III)BO 3 Compounds

New wide band gap semiconductors are needed to increase the power, voltage, and switching frequency limits of power electronic devices. A recent computational search identified a family of ultrawide band gap (4.8-7.8 eV) group-III orthoborates as promising materials for power electronics, assuming n-type doping could be attained. In this report we test this assumption by investigating the defect chemistry and dopability of rhombohedral calcite-structured AlBO 3 , GaBO 3 , and InBO 3 using first-principles calculations. Of the three, we find InBO 3 to have the most potential for n-type doping without significant compensation by native acceptor defects. Furthermore, Zr is predicted to readily substitute for In and behave as a shallow donor with maximal net donor concentrations exceeding 1 x 10 18 cm -3 under growth conditions typical for this class of materials. We also demonstrate thin film growth of InBO3 and measure its absorption onset, which we find to be consistent with theory. Ultimately, our results confirm the promise of InBO 3 as an n-type ultrawide band gap semiconductor and point to alloying with GaBO 3 and AlBO 3 for further optimization of band gap and electron concentration for high-power applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

A laser-assisted chlorination process for reversible writing of doping patterns in graphene

Chemical doping can be used to control the charge-carrier polarity and concentration in two-dimensional van der Waals materials. However, conventional methods based on substitutional doping or surface functionalization result in the degradation of electrical mobility due to structural disorder, and the maximum doping density is set by the solubility limit of dopants. Here we show that a reversible laser-assisted chlorination process can be used to create high doping concentrations (above 3 × 10 13 cm -2 ) in graphene monolayers with minimal drops in mobility. The approach uses two lasers—with distinct photon energies and geometric configurations—that are designed for chlorination and subsequent chlorine removal, allowing highly doped patterns to be written and erased without damaging the graphene. To illustrate the capabilities of our approach, we use it to create rewritable photoactive junctions for graphene-based photodetectors.

42 ENGINEERING↗
DOE OSTI2021

Carbon nanotube thermoelectric devices by direct printing: Toward wearable energy converters

Thermoelectric devices convert thermal energy to electrical energy and are particularly well-suited for energy harvesting from waste heat. Even as the number of electronic devices used in daily life proliferates, technical advances diminish the average power such devices require to perform a given function. Here, localized thermal gradients that abound in our living environments, despite having modest energy densities, are therefore becoming increasingly viable and attractive to power such devices. With this motivation, we report the design, fabrication, and characterization of single-wall carbon nanotube thermoelectric devices (CNT-TDs) on flexible polyimide substrates as a basis for wearable energy converters. Our aqueous-solution-based film fabrication process could enable readily scalable, low-cost TDs; here, we demonstrate CNT-hydroxypropyl cellulose (HPC) composite thermoelectric films by aerosol jet printing. The electrical conductivity of the composite films is controlled through the number of CNT/HPC layers printed in combination with control of the annealing conditions.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2020

Resonant and bound states of charged defects in two-dimensional semiconductors

A detailed understanding of charged defects in two-dimensional semiconductors is needed for the development of ultrathin electronic devices. Here, we study negatively charged acceptor impurities in monolayer WS 2 using a combination of scanning tunnelling spectroscopy and large-scale atomistic electronic structure calculations. We observe several localized defect states of hydrogenic wave function character in the vicinity of the valence band edge. Some of these defect states are bound, while others are resonant. The resonant states result from the multi-valley valence band structure of WS$_2$, whereby localized states originating from the secondary valence band maximum at Γ hybridize with continuum states from the primary valence band maximum at K/K$^{\prime}$. Resonant states have important consequences for electron transport as they can trap mobile carriers for several tens of picoseconds.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Simulation and characterization of cation disorder in ZnGeP 2

New optoelectronic materials are needed for improving the efficiency and reliability of devices such as solar cells. Cation ordering presents one means of controlling optoelectronic properties while introducing potential to also diversify the mineral constituents of electronic devices; however, the mechanisms of ordering are not yet well understood. To better understand cation ordering in a system integratable with current devices, we assess short- and long-range order parameters of ZnGeP 2 , a material closely lattice matched to Si. Structures are simulated using cluster-based Monte Carlo and first-principles calculations to compare structural distortions, periodicity, and local coordination environments in ZnGeP 2 to experimental data both from the literature and presented here. Comparing order parameters, we relate the transition in order parameters of ZnGeP 2 to that of ZnGeP 2 , discuss the reduction of band gaps with disorder, and show that traditional structural characterization alone is insufficient for understanding order in ZnGeP 2 .

14 SOLAR ENERGY↗
DOE OSTI2026

New perspectives on materials and device dynamics using time-resolved full-field diffraction X-ray imaging

Understanding how materials evolve during synthesis, processing, or device operation requires experimental access to structural dynamics across wide ranges of length and time scales, often in bulk samples or even within packaged devices. Time-resolved full-field diffraction X-ray microscopy has recently emerged as a powerful way to meet this need by combining the penetration and structural sensitivity of X-ray diffraction with objective-lens-based magnification, sensitive high-resolution X-ray imaging detectors, and pump-probe and real-time imaging strategies. Advances in full-field X-ray diffraction microscopy, often termed dark-field X-ray microscopy (DFXM), enable simultaneous imaging of extended fields of view while retaining crystallographic selectivity. Time-resolved DFXM promises to enable advances in materials processing and dynamics, electrochemical and photochemical processes, and the design of electronic devices. This Perspective summarizes the key instrumental concepts that define the performance of these methods, including the choice of imaging optics, detector considerations, and the impact of source time structure at synchrotron light sources and X-ray free-electron lasers (XFELs). We discuss the simultaneous use of complementary imaging modes that are increasingly used in practice. The early demonstrations of the potential of time-resolved DFXM include real-time defect and grain-boundary dynamics during metal annealing, stroboscopic imaging of functional devices with high strain sensitivity, and ultrafast pump-probe implementations at XFELs that directly visualize acoustic-wave propagation and energy dissipation in bulk crystals.

Dark-field X-ray microscopy↗
DOE OSTI2020

Controlled removal of hydrogen atoms from H-terminated silicon surfaces

The controlled formation of dangling bond structures on a H-terminated silicon surface is the first step in an atomically precise method of fabrication of silicon quantum electronic devices. An ultrahigh vacuum scanning tunneling microscope (STM) tip is used to selectively desorb hydrogen atoms from a Si(100)-2x1:H surface by injecting electrons with the sample held at a positive bias voltage. The authors propose a lithography method that allows the STM to operate under negative bias imaging conditions and simultaneously desorb H atoms as required. A high frequency signal is added to the negative bias voltage to deliver the required energy for hydrogen removal. The resulting current at this frequency and its harmonics are filtered to minimize their effect on the operation of the STM’s feedback control loop. The authors show that the chance of tip-sample crash during the lithography process is reduced by employing this method. They also demonstrate that this approach offers a significant potential for controlled and precise removal of H atoms from a H-terminated silicon surface and thus may be used for the fabrication of practical silicon-based atomic-scale devices.

42 ENGINEERING↗
DOE OSTI2024

Controllable strain-driven topological phase transition and dominant surface-state transport in HfTe5

Abstract The fine-tuning of topologically protected states in quantum materials holds great promise for novel electronic devices. However, there are limited methods that allow for the controlled and efficient modulation of the crystal lattice while simultaneously monitoring the changes in the electronic structure within a single sample. Here, we apply significant and controllable strain to high-quality HfTe 5 samples and perform electrical transport measurements to reveal the topological phase transition from a weak topological insulator phase to a strong topological insulator phase. After applying high strain to HfTe 5 and converting it into a strong topological insulator, we found that the resistivity of the sample increased by 190,500% and that the electronic transport was dominated by the topological surface states at cryogenic temperatures. Our results demonstrate the suitability of HfTe 5 as a material for engineering topological properties, with the potential to generalize this approach to study topological phase transitions in van der Waals materials and heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Neuromorphic spintronics

Neuromorphic computing uses brain-inspired principles to design circuits that can perform computational tasks with superior power efficiency to conventional computers. Approaches that use traditional electronic devices to create artificial neurons and synapses are, however, currently limited by the energy and area requirements of these components. Spintronic nanodevices, which exploit both the magnetic and electrical properties of electrons, can increase the energy efficiency and decrease the area of these circuits, and magnetic tunnel junctions are of particular interest as neuromorphic computing elements because they are compatible with standard integrated circuits and can support multiple functionalities. Here, we review the development of spintronic devices for neuromorphic computing. We examine how magnetic tunnel junctions can serve as synapses and neurons, and how magnetic textures, such as domain walls and skyrmions, can function as neurons. We also explore spintronics-based implementations of neuromorphic computing tasks, such as pattern recognition in an associative memory, and discuss the challenges that exist in scaling up these systems.

42 ENGINEERING↗
DOE OSTI2025

Purely electronic insulator-metal transition in rutile VO 2

Volatile resistive switching in neuromorphic computing can be tuned by external stimuli such as temperature or electric-field. However, this type of switching is generally coupled to structural changes, resulting in slower reaction speed and higher energy consumption when incorporated into an electronic device. The vanadium dioxide (VO 2 ), which has near room temperature metal-insulator transition (MIT), is an archetypical volatile resistive switching system. Here, we demonstrate an isostructural MIT in an ultrathin VO 2 film capped with a photoconductive cadmium sulfide (CdS) layer. Transmission electron microscopy, resistivity experiments, and first-principles calculations show that the hole carriers induced by CdS photovoltaic effect are driving the MIT in rutile VO 2 . The insulating-rutile VO 2 phase has been proved and can remain stable for hours. Our finding provides a new approach to produce purely electronically driven MIT in VO 2 , and widens its applications in fast-response, low-energy neuromorphic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Unconventional supercurrent phase in Ising superconductor Josephson junction with atomically thin magnetic insulator

Abstract In two-dimensional (2D) NbSe 2 crystal, which lacks inversion symmetry, strong spin-orbit coupling aligns the spins of Cooper pairs to the orbital valleys, forming Ising Cooper pairs (ICPs). The unusual spin texture of ICPs can be further modulated by introducing magnetic exchange. Here, we report unconventional supercurrent phase in van der Waals heterostructure Josephson junctions (JJs) that couples NbSe 2 ICPs across an atomically thin magnetic insulator (MI) Cr 2 Ge 2 Te 6 . By constructing a superconducting quantum interference device (SQUID), we measure the phase of the transferred Cooper pairs in the MI JJ. We demonstrate a doubly degenerate nontrivial JJ phase ( ϕ ), formed by momentum-conserving tunneling of ICPs across magnetic domains in the barrier. The doubly degenerate ground states in MI JJs provide a two-level quantum system that can be utilized as a new dissipationless component for superconducting quantum devices. Our work boosts the study of various superconducting states with spin-orbit coupling, opening up an avenue to designing new superconducting phase-controlled quantum electronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Polyferrocenylsilane Semicrystalline Polymer Additive for Solution-Processed p-Channel Organic Thin Film Transistors

In this study, we demonstrated for the first time that a metal-containing semicrystalline polymer was used as an additive to mediate the thin film morphology of solution-grown, small-molecule organic semiconductors. By mixing polyferrocenylsilane (PFS) with an extensively-studied organic semiconductor 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene), PFS as a semicrystalline polymer independently forms nucleation and crystallization while simultaneously ameliorating diffusivity of the blend system and tuning the surface energies as a result of its partially amorphous property. We discovered that the resultant blend film exhibited a 6-fold reduction in crystal misorientation angle and a 3-fold enlargement in average grain width. Enhanced crystal orientation considerably reduces mobility variation, while minimized defects and trap centers located at grain boundaries lessen the adverse impact on the charge transport. Consequently, bottom-gate, top-contact organic thin film transistors (OTFTs) based on the TIPS pentacene/PFS mixture yielded a 40% increase in performance consistency (represented by the ratio of average mobility to the standard deviation of mobility). The PFS semicrystalline polymer-controlled crystallization can be used to regulate the thin film morphology of other high-performance organic semiconductors and shed light on applications in organic electronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Vector Electrometry in a Wide-Gap-Semiconductor Device Using a Spin-Ensemble Quantum Sensor

Nitrogen-vacancy (N-V) centers in diamond work as a quantum electrometer. Using an ensemble state of N-V centers, we propose vector electrometry and demonstrate measurements in a diamond electronic device. A transverse electric field applied to the N-V axis under a high voltage is measured, while applying a transverse magnetic field. The response of the energy-level shift against the electric field is significantly enhanced compared with that against an axial magnetic field. Repeating the measurement of the transverse electric field for multiple N-V axes, our team obtains the components of the electric field generated in the device.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

QSHS: an axion dark matter resonant search apparatus

We describe a resonant cavity search apparatus for axion dark matter constructed by the quantum sensors for the hidden sector collaboration. The apparatus is configured to search for QCD axion dark matter, though also has the capability to detect axion-like particles, dark photons, and some other forms of wave-like dark matter. Initially, a tuneable cylindrical oxygen-free copper cavity is read out using a low noise microwave amplifier feeding a heterodyne receiver. The cavity is housed in a dilution refrigerator (DF) and threaded by a solenoidal magnetic field, nominally 8 T. The apparatus also houses a magnetic field shield for housing superconducting electronics, and several other fixed-frequency resonators for use in testing and commissioning various prototype quantum electronic devices sensitive at a range of axion masses in the range 2.0–40 μ eV c -2 . The apparatus as currently configured is intended as a test stand for electronics over the relatively wide frequency band attainable with TM 010 the cavity mode used for axion searches. We present performance data for the resonator, DF, and magnet, and plans for the first science run.

Physics - Physics of elementary particles and fiel↗
DOE OSTI2021

Sandia National Laboratories FY21 Progress Report

The Energetic Neutrons campaign led by Sandia National Laboratories (SNL) had a successful year testing electronic devices and printed circuit boards (PCBs) under 14 MeV neutron irradiation at OMEGA. During FY21 Sandia’s Neutron Effects Diagnostics (NEDs) and data acquisition systems were upgraded to test novel commercial off-the-shelf and Sandia-fabricated electronic components that support SNL’s National Security mission. The upgrades to the Sandia platform consisted of new cable chains, sample mount fixtures and a new fiber optics platform for testing optoelectronic devices.

42 ENGINEERING↗
DOE OSTI2022

Cyber Resilient Flexible Alternating Current Transmission Systems (XFACTS)

This report summarizes the activities conducted under the DOE-OE funded project DEOE0000897, Cyber Attack Resilient Flexible AC Systems – XFACTS. Hitachi Energy (HE), in collaboration with ABB Inc. (ABB), Bonneville Power Administration (BPA), University of Illinois at Urbana-Champaign (UIUC), Iowa State University (ISU), and University of Idaho (UI) pursued the development of a system of defense for Flexible Alternating current Transmission Systems against cyber-attacks (XFACTS). A FACTS substation enhanced with XFACTS defense mechanisms will be capable of mitigating cyberattacks especially those that seek to control electrical parameters like voltage or current and interrupt the power flow in AC lines. It empowers existing FACTS controllers and associated intelligent electronic devices to detect and mitigate malicious intents to depress system voltages, destabilize power flows, trip AC circuit breakers, corrupt currents, and voltages, even if the malicious commands and the measurements have correct syntax. The XFACTS functions utilize the physics of active power electronic systems, control and protection, electric power engineering principles, and state estimation to bring more in-depth cyber defense closer to the protected FACTS substation devices.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Charge trapping at Al/Al 2 ⁢O 3 interface facilitates hydrogen-induced superabundant metal vacancy formation

Hydrogen is a ubiquitous impurity that deteriorates the metal/oxide interface, causing challenges such as current leakage and blistering. Here, in this work, we uncover the mechanisms behind hydrogen-induced damage at the prototypical Al/A⁢l 2 ⁢O 3 interface. The precursor that we identify is charge trapping at the interface, which facilitates hydrogen segregation to the interface plane as H – . Presence of hydrogen increases aluminum vacancy concentration at the interfacial metal and oxide planes. Each Al vacancy can trap multiple hydrogen atoms. As a result, the interfacial aluminum vacancy and hydrogen concentrations increase by orders of magnitude. Additionally, hydrogen behaves as an n-type dopant and increases electronic conductivity at the oxide layer adjacent to the interface by forming H + , and the [V Al –H] complex is the predominant defect at this layer. These findings provide the precursor mechanisms of hydrogen-induced damage at the metal-oxide interfaces and have implications for advancing Al/A⁢l 2 ⁢O 3 –based coatings and electronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗