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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11

Design and test of the Near Infrared Mapping Spectrometer /NIMS/ focal plane for the Galileo Jupiter Orbiter mission

A Near Infrared Mapping Spectrometer (NIMS) will fly past Jupiter on the Galileo spacecraft in 1982. The infrared detector assembly (focal plane) used in the NIMS instrument is to be passively cooled to 80 K by radiation into space. The focal plane contains 15 InSb and two silicon detectors, each with an associated dual J-FET preamp and feedback resistor. Preliminary fabrication and test experience will be described for an experimental five-channel hybrid detector assembly. Measurements of spectral noise density along with a plasma cleaning technique will also be described. The final NIMS focal plane will contain much of the design experience gained from the experimental hybrid detector assembly.

Bailey, G.↗

The 2.2 GHz Surface Acoustic Wave (SAW) oscillator development Ku-band frequency source development

Two 2.2 GHz SAW oscillators using aluminum nitride on sapphire (AlN/Al2O3) delay lines were fabricated. The oscillators were electronically temperature compensated and characterized. One of the oscillators was used as the frequency reference for the Ku band source; the second oscillator is available for continued evaluation. A 15 GHz frequency source was designed and fabricated. The 15 GHz source consists of a Ku band FET oscillator which is phase locked to the frequency multiplied (X7) output of the 2.2 GHz SAW reference source. The Ku band source was built using microstrip circuit designs, which are hybrid compatible. Two wafer runs of 2.2 GHz TED devices were fabricated and evaluated. The devices were mounted on microstrip test substrates and evaluated as 15 GHz divide by 7 circuits. The device evaluation indicated that in their present form the TED is not a practical circuit element.

Source record↗

Cryogenic switched MOSFET characterization

Both p channel and n channel enhancement mode MOSFETs can be readily switched on and off at temperatures as low as 2.8 K so that switch sampled readout of a VLWIR Ge:Ga focal plane is electronically possible. Noise levels as low as 100 rms electrons per sample (independent of sample rate) can be achieved using existing p channel MOSFETs, at overall rates up to 30,000 samples/second per multiplexed channel (e.g., 32 detectors at a rate of almost 1,000 frames/second). Run of the mill devices, including very low power dissipation n channel FETs would still permit noise levels of the order of 500 electrons/sample.

Source record↗

Test results of Spacelab 2 infrared telescope focal plane

The small helium cooled infrared telescope for Spacelab 2 is designed for sensitive mapping of extended, low-surface-brightness celestial sources as well as highly sensitive investigations of the shuttle contamination environment (FPA) for this mission is described as well as the design for a thermally isolated, self-heated J-FET transimpedance amplifier. This amplifier is Johnson noise limited for feedback resistances from less than 10 to the 8th power Omega to greater than 2 x 10 to the 10th power Omega at T = 4.2K. Work on the focal plane array is complete. Performance testing for qualification of the flight hardware is discussed, and results are presented. All infrared data channels are measured to be background limited by the expected level of zodiacal emission.

Young, E. T.↗

Small signal amplifiers and converters for millimeter wave Satcom systems

This paper describes the current state of the art and the various design tradeoffs encompassing the variety of small signal active circuit 'building blocks' deployed in millimeter wave Satcom receivers and transmitters. Included in this catagory are such low noise receiver components as parametric and FET amplifiers and low loss mixer downconverters as well as low level transmitter driver components such as resistive and varactor upconverters. Current and projected state of the art performance data will be presented along with specific examples of operating hardware.

Okean, H. C.↗

500-Watt, 10-GHz Solid State Amplifier

X-band system amplifies low-duty-cycle pulses. Amplifier chain consists of driver-amplifier section using GaAs FET's with hybrid couplers, and power-amplifier section using IMPATT diodes with circulators for input/output coupling and for isolation between stages. Solid-state X-band amplifier package constitutes reliable, lightweight, compact, RF source. Used for many applications involving low-and variable-duty-cycle operation as well as fixed and high-duty-cycle operation.

Russell, K. J.↗

Dynamic switch matrix for the TDMA satellite switching system

Future high capacity satellite communication systems require signal processing on board satellites. The on-board signal processing includes switching of RF signals between multiple antennas to provide interconnection between the uplink and downlink beams. This paper describes the development of a dynamic switch matrix for a TDMA satellite switching system to be used in the next generation communications satellites. In this paper, a dynamic switch matrix, which includes the microwave switch matrix, the distribution control unit and the timing source, will be described. Several different microwave switch matrix architectures and switching devices were evaluated and compared. A unique coupler crossbar switch matrix architecture with dual-gate field effect transistor as switching element was developed. Experimental results of both microwave switch matrix (MSM) and distribution control unit (DCU) are presented. These test results verify the MSM with coupler crossbar architecture and dual-gate FET as switching element will meet the future SS-TDMA system requirements. Finally, the reliability of the dynamic switch matrix is addressed. The analysis shows reliability of 0.9981 for 7 year space operation can be achieved for the designed dynamic switch matrix.

Ho, P. T.↗

Energy-Saving Inverter

Commutation by field-effect transistor allows more efficient operation. High voltage field-effect transistor (FET) controls silicon controlled rectifiers (SCR's). Circuit requires only one capacitor and one inductor in commutation circuit: simpler, more efficient, and more economical than conventional inverters. Adaptable to dc-to-dc converters.

Rippel, W. E.↗

Ambient and cryogenic temperature testing of a 32-channel CMOS multiplexer

A 32 channel CMOS multiplexer was tested at room temperature and at liquid helium temperature (4.9 K). Voltage gain of the FET input stage, leakage current, electrical crosstalk, and noise as a function of clock frequency were measured. The voltage gain measured at 4.9 K was slightly higher than that measured at 300 K and was independent of clock frequency at both operating temperatures. The off channel leakage current was 0.23 pA/channel at 4.9 K. Electrical crosstalk between adjacent channels (one on, one off) was quite low. The spot noise at 10 Hz, of the CMOS multiplexer operating in the static mode did not vary significantly with operating temperature. In the dynamic mode (3.2 kHz clock) at room temperature, the spot noise at 10 Hz was substantially higher than that measured in the static mode.

Lee, J. H.↗

Spacecraft in switch matrix for wide band service applicatons in 30/20 GHz communications satellite systems

Bandwidth, switching speed, off-state isolation, and reliability over a ten-year mission were factors in determining the optimum available technology for satellite communications switching in 1982. A proof of concept model for a 20 x 20 coupled crossbar switch matrix designed with FET devices for microwave switching and with high speed CMOS LIS for switch crosspoint addressing was fabricated and tested. Results show the design is feasible for application in a multichannel SS-TDMA communications system. Expandibility can readily be achieved with this design. A conceptual design study for a 100 x 100 switch matrix utilizing a coupled crossbar architecture implemented with a monolithic microwave integrated circuits revealed technology needs for high capacity switch matrices.

Cory, B. J.↗

Development of a microwave 20 x 20 switch matrix for 30/20 GHz SS-TDMA application

The design and fabrication of a 3-8 GHz, 20 x 20 Satellite Switched-Time Division Multiple Access IF switch matrix applicable to a 30/20 GHz communications satellite are described. An assessment of switch architecture in 1980 concluded that the GaAs FET-based coupled crossbar switch matrix, incorporating high speed CMOS LSI logic for switch crosspoint addressing, would be the optimum technology available for communications satellite switching by 1982. This assessment was based on such factors as switching speed, bandwidth, off-state isolation, and reliability, over a 10-year mission life. A proof-of-concept model's construction and testing are presented.

Cory, B. J.↗

A 1 watt GaAs power amplifier for the NASA 30/20 GHz communication system

A multistage GaAs FET power amplifier, employing cascaded balanced stages using state-of-the-art 1/4, 1/2, and 1 watt devices, has been developed. A linear gain of 30 dB with 1.25 watts output has been achieved over a 17.7 to 19.4 GHz frequency band. The development and performance of the amplifier and its components are discussed.

Goel, J.↗

Tubes in space - Very much alive

Some advantages of TWTs over SSDs are discussed. Wideband TWTs have been developed which can produce 20 W of RF power at 20 GHz with 40 percent efficiency, a figure three or four times that available from SSDs such as FETs. The basic performance of TWTs exceeds that of SSDs for any given bandwidth and frequency. SSDs are transit time limited, and their performance deteriorates fundamentally as the reciprocal of the square of the operating frequency. Power limits for SSDs have been reached or are quickly being approached. Free electron devices such as tubes have an efficiency advantage because electrons in the vacuum travel faster than bulk charges in SSDs. Combined SSD devices are prone to burnout and incur penalties due to the need to dissipate heat. TWTs have a 6.7:1 advantage in radiator area ratio. Recent progress in TWT technology has produced a tenfold increase in CW output power, doubled to quadrupled the efficiency, and pushed frequency ranges into the terahertz region, orders of magnitude beyond the SSD cutoff.

Kosmahl, H. G.↗

Near-infrared linear array spectrometer for space applications

A 128-element InSb linear detector array read out with a field effect transistor (FET) multiplexing scheme has been developed at the Jet Propulsion Laboratory. State-of-the-art NEP, uniform response, on-detector charge integration, and very low focal plane heat load compared to that of discrete detector arrays allows this type of array to open new possibilities for spaceborne near-infrared imaging spectrometers. Large number of cooled detector elements are feasible with the new technology, making it practical to design sensitive spectrometers even for spinning spacecraft where simultaneous wavelength coverage is necessary to avoid confusion of spatial with spectral variations.

Apt, J.↗

GaAs microwave devices and circuits with submicron electron-beam defined features

This paper describes the fabrication and application of GaAs FET's, both as discrete microwave devices and as the key active components in monolithic microwave integrated circuits. The performance of these devices and circuits is discussed for frequencies ranging from 3 to 25 GHz. The crucial fabrication step is the formation of the submicron gate by electron-beam lithography.

Wisseman, W. R.↗

A comparative study of real-time spaceborne synthetic aperture radar processing techniques

A review of various spaceborne synthetic aperture radar (SAR) processing algorithms and their associated real-time SAR processor architectures is given in this paper. The processing complexity for each real-time SAR processor is presented next. A complexity comparison is then given based on the Seasat SAR parameters. It is shown that the frequency/time domain hybrid fast correlation and the two-stage fast Fourier transform (FET) approaches are the two most cost-effective choices for real-time spaceborne SAR processing. Finally, a discussion on future development trends in real-time spaceborne SAR processing is given.

Liu, K. Y.↗

The 30 GHz communications satellite low noise receiver

A Ka-band low noise front end in proof of concept (POC) model form for ultimate spaceborne communications receiver deployment was developed. The low noise receiver consists of a 27.5 to 30.0 GHz image enhanced mixer integrated with a 3.7 to 6.2 GHz FET low noise IF amplifier and driven by a self contained 23.8 GHz phase locked local oscillator source. The measured level of receiver performance over the 27.3 to 30.0 GHz RF/3.7 to 6.2 GHz IF band includes 5.5 to 6.5 dB (typ) SSB noise figure, 20.5 + or - 1.5 dB conversion gain and +23 dBm minimum third order two tone intermodulation output intercept point.

Steffek, L. J.↗

SETI Investigations at Jodrell Bank, England: September Through November 1983

The radiofrequency interference RFI environment was examined in the frequency band 1404 to 1444 MHz using the DSN Advanced Systems' Radio Frequency Interference Surveillance System. An uncooled FET amplifier was placed on the 12.8-m antenna, and unlimited observing time was made available to the SETI project. One night of observing at 1667 MHz was made available on the 76 m antenna. Preliminary results of four investigations are reported: (1) full scans of the horizon, cataloging RFI events between 1404 and 1444 MHz; (2) lunar reflections of terrestrial RFI signals between 1424 and 1444 MHz; (3) noise background distortions caused by galactic neutral hydrogen emission at 1420.4 MHz; and (4) low sensitivity search for spectral features of F, G, and K stars.

Downs, G. S.↗