Search NASA⌕ Search

SEARCH · Search NASA

Results for “Floating zone”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Gallium oxide semiconductor-based large volume ultrafast radiation hard spectroscopic scintillators

We report on the development of the first-ever inorganic radiation-hard moisture-insensitive large volume spectroscopic semiconductor-based scintillator with less than 2 ns decay time and light yields as high as 8000 ph/MeV. Despite extensive research into scintillator materials, the quest for an ideal scintillator combining ultrafast decay times (akin to BaF 2 and Yb-doped scintillators such as Lu 2 O 3 :Yb), high light yields (exceeding 2000 photons per MeV), spectroscopic capabilities, and exceptional radiation hardness remain unfulfilled. In this study, we demonstrate and report for the first time the viability of large-volume (up to 20 mm thickness) gallium oxide (β-Ga 2 O 3 ) semiconductor-based scintillators for applications requiring these properties. These β-Ga 2 O 3 scintillators were grown using the fast turnaround (~2 days) crucible-free optical float zone (FZ) technique. The high light yield and ultrafast decay time of these high-purity n-type semiconductors with free carrier concentration of 6 × 10 17 cm –3 are attributed to native defects, specifically oxygen vacancies (V O ) and gallium–oxygen vacancy pairs (V Ga –V O ), generated during optimized FZ growth. The ultrafast decay, along with high light yield, enables excellent timing resolution and high count rate detection for applications like time-of-flight positron emission tomography, physics experiments, and nuclear safety. The radiation hardness of these devices has been documented in a separate publication.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2022

Radiation hard gallium oxide scintillators for high count rate radiation detection

Despite decades of materials research, the availability of appropriate crystalline radiation-hard scintillators with ultrafast decay times (~10ns) and high light yields (>2000 ph/MeV) are still limited. In this study, we demonstrate the potential of gallium oxide (β-Ga 2 O 3 ) based scintillators for high count rate applications. The low-cost rugged β-Ga 2 O 3 scintillators were grown using the optical float zone (FZ) technique. Several dopants and growth atmospheres were used to demonstrate the balance between ultrafast primary decay time and the light yield of the scintillators. Light yields as high as 6446 ± 716 ph/MeV were obtained with 18.3 ns decay time for 662 keV gamma rays. Decay times as fast as 12ns were obtained with a 3212 ± 357 ph/MeV light yield. An excellent 662 keV gamma energy resolution of 7% was obtained using the β-Ga 2 O 3 :Ce crystals. Even with these excellent scintillation properties, the gamma radiation hardness of β-Ga 2 O 3 crystals was better than the leading radiation-hard lead tungstate (PbWO 4 ) crystals. Twenty-six scintillators fabricated from the grown β-Ga 2 O 3 crystals were tested for radiation hardness with a 60 Co gamma irradiation rate of 14 krad/h with a total radiation dose of 2 Mrad. The scintillation properties of these crystals remained unaffected. To date, no other scintillator has demonstrated such high radiation resistance. Furthermore, these FZ-grown low-cost, non-hygroscopic, and high-density β-Ga 2 O 3 scintillators can replace the existing scintillators in many applications ranging from nuclear and high energy physics experiments to nuclear security.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
NASA NTRS1975

Analytics of crystal growth in space

The variation of radial impurity distribution induced by surface tension driven flow increases as the zone length decreases in silicon crystals grown by floating zone melting. In combined buoyancy driven and surface tension driven convection at the gravity of earth, the buoyancy contribution becomes relatively smaller as the zone diameter decreases and eventually convection is dominated by the surface tension driven flow (in the case of silicon, for zones of less than about 0.8 cm in diameter). Preliminary calculations for sapphire suggest the presence of an oscillatory surface tension driven convection as a result of an unstable melt surface temperature that results when the zone is heated by a radiation heater.

Chang, C. E.↗
NASA NTRS1979

Influence of the space environment on some materials processing phenomena

The influence of the space environment on materials processing phenomena is studied by applying the principles of physical similarity to a system E on Earth and a system S in the microgravity environment of space. If these systems can be characterized by a set of dimensionless groups, then they are similar if corresponding members of the set are equal for E and S. Similarity is often impractical or impossible if Q is larger than a few samples. For example, there is a simple law of similarity for an isothermal liquid zone floating between inert solids; however, similarity is lost if the zone becomes nonisothermal. A molten zone during crystal growth is so complex that a complete set cannot be identified with certainty. A second example is double-diffusive convection during unidirectional solidification of a binary alloy. Results show that buoyancy driven fluid dynamical instabilities couple with constitutionally related instabilities quite differently in E and S.

Sekerka, R. F.↗
NASA NTRS1986

A graphical treatment of combined evaporation and segregation contributions to impurity profiles for zone-refining in vacuum

Impurity concentration profiles have been calculated for zone-refining when both segregation and evaporation of impurities are operative, assuming a uniform initial concentration. Graphic profiles are presented for selected values of effective segregation coefficient k, effective evaporation coefficient g, and number of zone passes n. Some examples of impurity profiles for float-zoned silicon are also presented.

Ciszek, T. F.↗
NASA NTRS1987

Quasi-containerless glass formation method and apparatus

Glass rods or fibers are prepared from a polycrystalline rod by heating a short section of the rod in a first furnace to form a molten zone of the rod, heating a second short section of the rod in a second furnace to form a second molten zone and gradually moving the furnaces apart from one another to form an elongated molten float zone, which is cooled in its midsection to produce a glass rod between the molten zones. In another embodiment a single moving furnace assembly and a precursor rod with compositional gradient sections, are used, and the moving furnace traverses the rod so that the molten portion is drawn out to a degree whereby a fiber of ultrapure glass is formed.

Naumann, Robert J.↗
NASA NTRS1991

Thermocapillary flow and natural convection in a melt column with an unknown melt/solid interface

A vertical melt column set up between an upper heating rod and a lower sample rod, i.e., the so-called half-zone system, is a convenient experimental tool for studying convection in the melt in floating-zone crystal growth. In order to help understand the convection observed in the melt column, a computer model has been developed to describe steady state, axisymmetrical thermocapillary flow and natural convection in the melt. The governing equations and boundary conditions are expressed in general non-orthogonal curvilinear coordinates in order to accurately treat the unknown melt/solid interface as well as all other physical boundaries in the system. The effects of key dimensionless variables on the following items are discussed: (1) convection and temperature distribution in the melt; (2) the shape of the melt/solid interface; (3) the height of the melt column. These dimensionless variables are the Grashof, Marangoni and Prandtl numbers.

Lan, C. W.↗
NASA NTRS1981

Ground based silicon zoning program

The preparation of building flight hardware and carrying out experiments in space was investigated. The ground based investigation phase A/B of the experimental float zoning of silicon is outlined. The overall program goals, leading to recommending experiments to be done in phase C/D are spelled out. Thermophysical properties which must be accurately known to compare thermophysical models to experimental zoning of silicon are listed.

Kern, E. L.↗
NASA NTRS1989

Center for the development of commercial crystal growth in space

The second year of operation of the Center for Commercial Crystal Growth in Space is described. This center is a consortium of businesses, universities and national laboratories. The primary goal of the Center's research is the development of commercial crystal growth in space. A secondary goal is to develop scientific understanding and technology which will improve commercial crystal growth on earth. In order to achieve these goals the Center's research is organized into teams by growth technique; melt growth, solution growth, and vapor growth. The melt growth team is working on solidification and characterization of bulk crystals of gallium arsenide and cadmium telluride. They used high resolution X-ray topography performed at the National Synchrotron Light Source at Brookhaven National Laboratory. Streak-like features were found in the diffraction images of semi-insulating undoped LEC GaAs. These were shown to be (110) antiphase boundaries, which have not been reported before but appear to be pervasive and responsible for features seen via less-sensitive characterization methods. The results on CdTe were not as definitive, but indicate that antiphase boundaries may also be responsible for the double peaks often seen in X-ray rocking curves of this material. A liquid encapsulated melt zone system for GaAs has been assembled and techniques for casting feed rods developed. It was found that scratching the inside of the quartz ampoules with silicon carbide abrasive minimized sticking of the GaAs to the quartz. Twelve floating zone experiments were done.

Wilcox, William R.↗
NASA NTRS1983

Microgravity silicon zoning investigation

A resistance heated zoner, suitable for early zoning experiments with silicon, was designed and put into operation. The initial power usage and size was designed for an shown to be compatible with payload carriers contemplated for the Shuttle. This equipment will be used in the definition and development of flight experiments and apparatus for float zoning silicon and other materials in microgravity.

Kern, E. L.↗
DOE OSTI2016

A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension

This letter presents a new edge termination technique named a hybrid junction termination extension (Hybrid-JTE), which combines ring-assisted JTE and multiple floating zone JTE. Based on the parameters of the drift layer specified by the wafer vendor, the measured breakdown voltage of the fabricated p-i-n diode using the Hybrid-JTE is as high as 5450 V, which is close (~99%) of the ideal parallel plane p-n junction. As a result, measured breakdown voltages from randomly chosen 32 p-i-n diodes across the wafer show very tight distribution: 29 diodes provide breakdown voltages higher than 5000 V at 100 μA.

42 ENGINEERING↗
DOE OSTI2021

Influence of the Bulk Resistivity on Silicon Heterojunction Solar Cells and Module Reliability

Recent developments in industry on surface passivation open the possibility of using less doped substrates in silicon solar cells. In this report we investigate how the bulk resistivity affects the performance of silicon cells and the reliability of modules. Herein, n- and p-type silicon heterojunction cells with bulk resistivities between 3 and 15 000 Ωcm are studied. We measure the current–voltage characteristics of n-type cells across the resistivity range, and we find comparable responses to illumination intensities between 0.1 and 1 suns. The cells with bulk resistivities over 1000 Ωcm show breakdown voltages larger than -1000 V, almost two orders of magnitude higher than in typical commercial cells. Although modules have bypass-diodes to prevent cells from going into breakdown, higher breakdown voltages can improve the reliability of modules in case of bypass-diode failure and reduce the module cost by easing the number of bypass-diodes required. Finally, the cells have been submitted to light soaking. The float-zone p-type cells with bulk resistivities over 10 000 Ωcm are less sensitive to light-induced degradation than cells with bulk resistivities below 10 Ωcm. The former show to recover few hours after light soaking, while the latter recover only after dark annealing.

14 SOLAR ENERGY↗
DOE OSTI2019

Signature of Ferromagnetic Phase at Low Temperature in Low-Doped La{sub 0.88}Ca{sub 0.12}MnO{sub 3} Single Crystal

The confirmation of ferromagnetism at low temperature in a low-doped manganites system is always debatable. It is for the first time, electrical, magnetic, and thermal properties have been measured for manganites single crystal of La{sub 0.88}Ca{sub 0.12}MnO{sub 3} by using a floating-zone method. The electrical resistivity shows a perceptible change of resistance at a low temperature which can be viewed as a signature of the ferromagnetic phase. The ferromagnetic phase of the investigated La{sub 0.88}Ca{sub 0.12}MnO{sub 3} single crystal with Curie temperature of T{sub C} = 120 K which is in closed agreement with ac-susceptibility measurement. An analysis of the specific heat suggests the transition peak (T{sub P}) coincides with the T{sub C} and attains 1.2 J mol{sup −1} K at 116 K. The magnetoresistance (MR) and temperature coefficient of resistance (TCR) were found to be 69% and 10% respectively, which expands its subtle potential for applications in spintronics and thermistor.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Thermodynamic and Structural Study of the Copper-Aluminum System by the Electrochemical Method Using a Copper-Selective Beta″ Alumina Membrane

The liquid phase thermodynamics of mixing of the copper-aluminum binary system are investigated as a function of temperature and composition using the electrochemical potential difference method. A copper-selective beta″ alumina is used as a solid electrolyte, synthesized through ion exchange, sintering from base oxide powders, and the floating zone method of crystal growth. Measured thermodynamics of mixing data were used to inform short-range ordering in copper-aluminum melts through Darken’s factor for excess stability and Bhatia–Thornton structure factors, revealing a strong departure from ideality and pronounced ordering. Mixing properties were used to predict viscosity and self-diffusion coefficients. Features observed in calculated electronic entropy of mixing for copper-aluminum were compared with trends in viscosity, demonstrating the utility of electronic properties of mixing in the description of structure–properties in this liquid binary system.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Compositional screening of Ce-doped (Gd,Lu,Y) 3 (Al,Ga) 5 O 12 ceramics prepared by quenching from melt and their luminescence properties

Quenching from the melt using an Optical Floating Zone furnace was investigated as a possible high-throughput preparation method in order to screen novel scintillating materials. To validate this method, polycrystalline rare-earth aluminum garnets and yttrium gallium aluminum garnets were synthesized and characterized by X-ray diffraction, photoluminescence and radioluminescence emission spectra as well as radioluminescence imaging and compared to the previously reported properties of those materials. In order to achieve rapid, but quantitative comparison of the materials, pellets fabricated from the synthesized powders were sintered; two different sintering conditions were investigated and compared. Therefore, a simplistic energy deposition and light absorption model for brightness of opaque samples under X-ray irradiation was developed to estimate the relative scintillation efficiency of the materials. Based on the results, Y 3 Al 5 O 12 , LuY 2 Al 5 O 12 and GdY 2 Al 5 O 12 seem to have the highest scintillation efficiency among the prepared samples.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Design of the first full size ATLAS ITk strip sensor for the endcap region

The ATLAS collaboration is designing the all-silicon Inner Tracker (ITk) that will operate in the HL-LHC replacing the current design. The silicon microstrip sensors for the barrel and the endcap regions in the ITk are fabricated in 6 inch, p-type, float-zone wafers, where large-area strip sensor designs are laid out together with a number of miniature sensors. The radiation tolerance and specific system issues like the need for slim edge of 450 μm have been tested with square shaped sensors intended for the barrel part of the tracker. This work presents the design of the first full size silicon microstrip sensor for the endcap region with a slim edge of 450 μm. The strip endcaps will consist of several wheels with two layers of silicon strip sensors each. The strips have to lie along the azimuthal direction, apart from a small stereo angle rotation (20 mrad on each side, giving 40 mrad total) for measuring the second coordinate of tracks. This stereo angle is built into the strip layout of the sensor and, in order to avoid orphan strips, the sensor edges are inclined by the stereo angle. On top of this, the top and bottom edges are designed as arcs to have equal length strips. Together with the design of this new Stereo Annulus sensor, we will report on the initial measurements of the leakage current as a function of bias voltage, after dicing, and the depletion voltage.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗