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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11

Microwave properties of n-type InSb in a magnetic field between 4 and 300 K.

A two-band conduction model is used to determine the properties of shallow-type impurity semiconductors in the presence of microwave and dc magnetic fields as a function of temperature. Measurements using cavity perturbation techniques are employed to determine the properties of n-type InSb and theoretical and experimental results between 4 and 300 K are compared. The hot-electron effect was found to be insignificant between 77 and 300 K, and the scattering mechanisms are dominated by acoustic and polar modes over the same temperature range.-

Eldumiati, I. I.↗

Observation of the J = 2 to J = 1 transition of interstellar CO at 1.3 millimeters

The NRAO 36-foot antenna at Kitt Peak with a novel type of millimeter-wave superheterodyne receiver was used in observations of 1.3-mm line interstellar radiation due to J ? 2-1 transitions of C(12)0(16) and C(13)0(16). The liquid-helium-cooled hot-electron bolometer mixer of the superheterodyne receiver was used as the detecting element. The Orion Nebula CO system was found to be thermalized, showing a peak excitation temperature of about 76 K.

Phillips, T. G.↗

On the ultrasoft X-ray background

The soft X-ray background has been studied down to energies of the order of 90 eV. The spectrum is found to be extremely soft, though not as steeply rising toward very low energies as indicated by Yentis et al. (1972). The background is both softer and more intense at high northern galactic latitudes than at low latitudes. Measured pulse-height spectra are analyzed under the assumption of different source models. The results are consistent with an origin of the background in a hot interstellar plasma with a temperature of about 800,000 K and a hot electron density of approximately 0.001 per cu cm. Upper limits are set on the soft X-ray emission from several interesting stellar objects.

Levine, A.↗

DIFMOS - A floating-gate electrically erasable nonvolatile semiconductor memory technology

Electrically alterable read-only memories (EAROM's) or reprogrammable read-only memories (RPROM's) can be fabricated using a single-level metal-gate p-channel MOS technology with all conventional processing steps. Given the acronym DIFMOS for dual-injector floating-gate MOS, this technology utilizes the floating-gate technique for nonvolatile storage of data. Avalanche injection of hot electrons through gate oxide from a special injector diode in each bit is used to charge the floating gates. A second injector structure included in each bit permits discharge of the floating gate by avalanche injection of holes through gate oxide. The overall design of the DIFMOS bit is dictated by the physical considerations required for each of the avalanche injector types. The end result is a circuit technology which can provide fully decoded bit-erasable EAROM-type circuits using conventional manufacturing techniques.

Gosney, W. M.↗

Alternative approaches to plasma confinement

The paper discusses 20 plasma confinement schemes each representing an alternative to the tokamak fusion reactor. Attention is given to: (1) tokamak-like devices (TORMAC, Topolotron, and the Extrap concept), (2) stellarator-like devices (Torsatron and twisted-coil stellarators), (3) mirror machines (Astron and reversed-field devices, the 2XII B experiment, laser-heated solenoids, the LITE experiment, the Kaktus-Surmac concept), (4) bumpy tori (hot electron bumpy torus, toroidal minimum-B configurations), (5) electrostatically assisted confinement (electrostatically stuffed cusps and mirrors, electrostatically assisted toroidal confinement), (6) the Migma concept, and (7) wall-confined plasmas. The plasma parameters of the devices are presented and the advantages and disadvantages of each are listed.

Roth, J. R.↗

Far infrared heterodyne systems

Three far infrared detectors, the InSb hot electron bolometer, the GaAs Schottky diode and the Josephson point contact junction, were incorporated as mixers into sensitive heterodyne systems. The performances of existing heterodyne receivers/radiometers using these detectors are described and compared. Other applications of submillimeter heterodyne techniques are discussed.

Tannenwald, P. E.↗

Bulk submillimeter-wave mixers: Strain and superlattices

Strained germanium crystals, doped with gallium, were used as heterodyne mixers at THz frequencies, with infrared bandwidths approaching a GHz. The mixer performance (conversion loss and mixer noise) was analyzed in terms of nonlinearities associated with acceptor levels and with relaxation rates of free holes. Comparison was made with similar mixers employing low lying donor levels in high purity GaAs and with hot electron InSb mixers.

Litvak, M. M.↗

Ion energetics in the Venus nightside ionosphere

Consideration is given to the energetics of the ion gas flowing across the terminator into the Venus nightside ionosphere. Expressions are derived for the transport time of the ion gas (through 1 radian in solar zenith angle), the heat transfer time from the hot electron gas to the ions of an amount equal to the ion thermal energy), and the time required for vertical heat conduction to remove the internal energy of the ion column above a reference altitude, and it is shown that the time constant for transport is an order of magnitude smaller than the electron heat transfer time and comparable to the conduction time, and thus the ion gas is not a vertical conductive steady state. The conversion of bulk flow ion kinetic energy into heat is suggested as the mechanism responsible for the maintenance of the nightside ion temperatures at their observed values. It is thus concluded that the flow of the ion gas is quasi-adiabatic, and that steady-state, vertical, one dimensional energy balance models must be used with caution in the Venus ionosphere.

Knudsen, W. C.↗

Optically induced bistable states in metal/tunnel-oxide/semiconductor /MTOS/ junctions

A new switching phenomenon in metal-oxide semiconductor tunnel junction has been discovered. With a sufficiently large negative bias applied to the electrode, incident visible light of intensity greater than about 1 microW/sq cm causes the reverse-biased junction to switch from a low-current to a high-current state. It is believed that hot-electron-induced impact ionization provides the positive feedback necessary for switching, and causes the junction to remain in its high-current state after the optical excitation is removed. The junction may be switched back to the low-current state electrically. The basic junction characteristics have been measured, and a simple model for the switching phenomenon has been developed.

Lai, S. K.↗

InSb heterodyne receivers for submillimeter astronomy

InSb hot electron bolometer mixer receivers have been developed for submillimeter line studies of the interstellar medium up to about 500 GHz. The receivers have been used aboard the NASA Kuiper Airborne Observatory which is transported to about 12,000 km by a C141 aircraft. Data have been obtained on new interstellar lines (such as the ground-state fine structure transition of atomic carbon at 492 GHz) and such molecular transitions as carbon monoxide and water. Other data were obtained at ground level using the 5-cm Hale telescope at Mount Palomar and the NASA Infrared Telescope facility at Mauna Kea, HI. The heterodyne bolometers have reached noise temperatures of less than 400 K at all frequencies to 500 GHz.

Phillips, T. G.↗

Tunable Heterodyne Receiver from 100 Micron to 1,000 Micron for Airborne Observations

Interest in high resolution spectrometers for the submillimeter wavelength range from 100 micron to 1,000 micron is mostly stimulated by molecular spectroscopy in radioastronomy and atmospheric physics, and by plasma diagnostic experiments. Schottky diodes in waveguide mixer technology and InSb-hot electron bolometers are successfully used in the 0.5 to a few millimeter range whereas tandem Fabry-Perot spectrometers combined with photoconductive detectors (Ge:Sb and Ge:Ga) are used for the 100 micron range. Recent research on heterodyne spectrometers, with Schottky diodes in an open structure mixer and a molecular laser as local oscillators, which can be used over the whole wavelength range is summarized.

Roeser, H. P.↗

Theoretical and material studies on thin-film electroluminescent devices

Electroluminescent materials and device technology were assessed. The evaluation strongly suggests the need for a comprehensive theoretical and experimental study of both materials and device structures, particularly in the following areas: carrier generation and multiplication; radiative and nonradiative processes of luminescent centers; device modeling; new device concepts; and single crystal materials growth and characterization. Modeling of transport properties of hot electrons in ZnSe and the generation of device concepts were initiated.

Summers, C. J.↗

Reliability analysis

The objective was to search for and demonstrate approaches and concepts for fast wafer probe tests of mechanisms affecting the reliability of MOS technology and, based on these, develop and optimize test chips and test procedures. Progress is reported on four important wafer-level reliability problems: gate-oxide radiation hardness; hot-electron effects; time-dependence dielectric breakdown; and electromigration.

Source record↗

Ion partitioning in the hot Io torus - The influence of S2 outgassing

An alternative time-independent model of the ion partitioning in the hot Io torus is proposed which introduces the ratio of sulfur to oxygen in the neutral source as a free parameter. Measurements of the ion abundances in the torus plasma are presented and discussed, noting some ambiguities and identifying the features that are well established. Physical processes important to the understanding of the ion partitioning calculation are reviewed. The results of the model are discussed in the context of observational constraints, and spectroscopic constraints are discussed. It is concluded that a bimodal source model, together with a small percentage of hot electrons and a relatively short diffusion time scale, can account for the principal observational features without invoking significant time variability. In particular, the O III deficiency observed in 1981 can be obtained in a model that produces other aspects of the torus ion partitioning measured during the Voyager 1 encounter.

Moreno, M. A.↗

Star of Lima - Overview and optical diagnostics of a barium Alfven critical velocity experiment

The Alfven critical velocity mechanism for ionization of a neutral gas streaming across the magnetic field has been demonstrated in laboratory experiments. In March 1983, two rocket-borne experiments with Ba and Sr tested the effect in the wall-less laboratory of space from Punto Lobos, Peru, near 430 km altitude. 'Star of Lima' used a conical Ba shaped charge aimed at an instrument payload about 2 km away. Because of rocket overperformance the detonation occurred in partial sunlight, so that less than 21.6 percent of the ionizing UV was present. Particle and field measurements indicate the production of hot electrons and waves in the energy and frequency range that are respectively predicted to produce a cascade of ionization by the Alfven mechanism. However, the ionization fluxes and wave energy density did not reach cascade levels, and optical observations indicate that only 2.5 to 5 x 10 to the 20th Ba ions were produced. A substantial portion and perhaps all of the ionization could have been produced by solar UV. The failure of the Alfven process in this experiment is not well understood.

Wescott, E. M.↗

Tunneling-assisted impact ionization for a superlattice

Tunneling-assisted impact ionization across the conduction-band-edge discontinuity of quantum-well heterostructures is investigated and applied to a new superlattice structure. Multiquantum-well structures where the quantum-well regions are heavily doped and the undoped barrier regions are essentially insulating were considered. Incident hot electrons due to the applied electric field perpendicular to the heterointerface interact with the two-dimensional electrons confined to the quantum wells through Coulomb force. The resultant electrons can either have enough energy to get out of the wells or to tunnel through the triangular barriers. A new analytical approximation for the impact ionization rate is given which compares favorably with numerical results. The tunneling-assisted impact ionization rates and the ionization coefficients are calculated. It is shown that the tunneling effect reduces the ionization threshold and enhances the ionization rate significantly.

Chuang, S. L.↗