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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Intrinsic magnetism in KTaO3 heterostructures

There has been intense recent interest in the two-dimensional electron gases (2DEGs) that form at the surfaces and interfaces of KTaO3 (KTO), with the discovery of superconductivity at temperatures significantly higher than those of similar 2DEGs based on SrTiO3 (STO). Like STO heterostructures, these KTO 2DEGs are formed by depositing an overlayer on top of appropriately prepared KTO surfaces. Some of these overlayers are magnetic, and the resulting 2DEGs show signatures of this magnetism, including hysteresis in the magnetoresistance (MR). Here, we show that KTO 2DEGs fabricated by depositing AlOx on top of KTO also show hysteretic MR, indicative of long-range magnetic order, even though the samples nominally contain no intrinsic magnetic elements. The hysteresis appears in both the transverse and longitudinal resistance in magnetic fields both perpendicular to and in the plane of the 2DEG. The hysteretic MR has different characteristic fields and shapes for surfaces of different crystal orientations and vanishes above a few Kelvin. Density functional theory (DFT) calculations indicate that the magnetism likely arises from Ta4+ local moments created in the presence of oxygen vacancies.

Physics↗
DOE OSTI2024

Ferroelectric Al1 − xBxN–GaN heterostructures

This report demonstrates Al0.93B0.7N thin films grown epitaxially on n-type GaN (0002)/c-plane sapphire substrates by reactive magnetron sputtering at 300 °C. At 200 nm film thickness, the Al0.93B0.07N layers exhibit partially relaxed substrate-induced epitaxial strain, a 0.16° wide (0002) rocking curve, in-plane crystallographic registry, and sub-nanometer surface roughness. Electrically, the stack shows robust hysteresis over three frequency decades, a remanent polarization of ∼125 μC/cm2, a strongly frequency dependent coercive field, highly uniform dc leakage currents, and endurance >106 field cycles. This report validates possibilities for ferroelectric nitride integration into conventional III-nitride heterostructures with high crystalline fidelity, high electrical resistivity, and persistent hysteresis. Such materials are synthesizable at thermal budgets and temperatures compatible with back-end-of-the-line boundary conditions.

Physics↗
DOE OSTI2024

Effect of fabrication processes on BaTiO 3 capacitor properties

There is an increasing desire to utilize complex functional electronic materials such as ferroelectrics in next-generation microelectronics. As new materials are considered or introduced in this capacity, an understanding of how we can process these materials into those devices must be developed. Here, the effect of different fabrication processes on the ferroelectric and related properties of prototypical metal oxide (SrRuO 3 )/ferroelectric (BaTiO 3 )/metal oxide (SrRuO 3 ) heterostructures is explored. Two different types of etching processes are studied, namely, wet etching of the top SrRuO 3 using a NaIO 4 solution and dry etching using an Ar + -ion beam (i.e., ion milling). Polarization-electric-field hysteresis loops for capacitors produced using both methods are compared. For the ion-milling process, it is found that the Ar + beam can introduce defects into the SrRuO 3 /BaTiO 3 /SrRuO 3 devices and that the milling depth strongly influences the defect level and can induce a voltage imprint on the function. Realizing that such processing approaches may be necessary, work is performed to ameliorate the imprint of the hysteresis loops via ex situ “healing” of the process-induced defects by annealing the ferroelectric material in a barium-and-oxygen-rich environment via a chemical-vapor-deposition-style process. This work provides a pathway for the nanoscale fabrication of these candidate materials for next-generation memory and logic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Electrical and structural characterization of in situ MOCVD Al2O3/β-Ga2O3 and Al2O3/β-(AlxGa1−x)2O3 MOSCAPs

This study investigates the electrical and structural properties of metal–oxide–semiconductor capacitors (MOSCAPs) with in situ metal-organic chemical vapor deposition-grown Al2O3 dielectrics deposited at varying temperatures on (010) β-Ga2O3 and β-(AlxGa1−x)2O3 films with different Al compositions. The Al2O3/β-Ga2O3 MOSCAPs exhibited a strong dependence of electrical properties on Al2O3 deposition temperature. At 900 °C, reduced voltage hysteresis (∼0.3 V) with improved reverse breakdown voltage (74.5 V) was observed, corresponding to breakdown fields of 5.01 MV/cm in Al2O3 and 4.11 MV/cm in β-Ga2O3 under reverse bias. In contrast, 650 °C deposition temperature resulted in higher voltage hysteresis (∼3.44 V) and lower reverse breakdown voltage (38.8 V) with breakdown fields of 3.69 and 2.87 MV/cm in Al2O3 and β-Ga2O3, respectively, but exhibited impressive forward breakdown field, increasing from 5.62 MV/cm at 900 °C to 7.25 MV/cm at 650 °C. High-resolution scanning transmission electron microscopy (STEM) revealed improved crystallinity and sharper interfaces at 900 °C, contributing to enhanced reverse breakdown performance. For Al2O3/β-(AlxGa1−x)2O3 MOSCAPs, increasing Al composition (x) from 5.5% to 9.2% reduced net carrier concentration and improved reverse breakdown field contributions from 2.55 to 2.90 MV/cm in β-(AlxGa1−x)2O3 and 2.41 to 3.13 MV/cm in Al2O3. The electric field in Al2O3 dielectric under forward bias breakdown also improved from 5.0 to 5.4 MV/cm as Al composition increased from 5.5% to 9.2%. The STEM imaging confirmed the compositional homogeneity and excellent stoichiometry of both Al2O3 and β-(AlxGa1−x)2O3 layers. These findings demonstrate the robust electrical performance, high breakdown fields, and excellent structural quality of Al2O3/β-Ga2O3 and Al2O3/β-(AlxGa1−x)2O3 MOSCAPs, highlighting their potential for high-power electronic applications.

Bhuiyan, A. F. M. Anhar Uddin (ORCID:0000000334212↗
DOE OSTI2025

Neuromorphic heat transport effects in a molecular junction

Understanding energy transport at the nanoscale is an open and fundamental challenge in the molecular sciences with direct implications for the design of new electronics, computing devices, and materials. While nanoscale energy transport under steady-state conditions has been studied extensively, there is much less known about energy transport under time-dependent driving forces, particularly in the far-from-equilibrium regime. In this work, we use nonequilibrium molecular dynamics simulations and stochastic thermodynamics to investigate energy transport in a well-studied nanoscale system—a molecular junction—subjected to a time-periodic temperature gradient. The primary observation is that molecular junctions can exhibit heat transport hysteresis, a phenomenon in which the heat flux through a system depends not only on the instantaneous value of a time-dependent temperature bias but also on the temporal history of that bias. The presented findings illustrate that molecular junctions can exhibit the specific memory effect—heat transport hysteresis—that is essential for the design of thermal neuromorphic computers. This work elucidates a potential pathway toward the realization of such devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2026

Crystallographic registry in epitaxial V3O5 thin films

Crystallographic orientation plays a central role in determining transport properties in correlated oxides with low-hysteresis metal–insulator transitions. Here, V3O5 thin films were grown on Al2O3 (0001) and their crystallographic registry was evaluated using x-ray diffraction and cross-sectional transmission electron microscopy. θ–2θ measurements show a single out-of-plane orientation defined by the (202) reflection. Azimuthal φ-scans of the V3O5 (310) reflection exhibit twelve discrete maxima over 360°, indicating a finite set of in-plane orientations imposed by the substrate symmetry. High-resolution TEM and fast Fourier transform analysis confirm crystallographic coherence at the film–substrate interface. The electrical conductivity exhibits a metal–insulator transition at TMIT ≈ 423 K with no measurable thermal hysteresis and a total change of ~1.6 orders of magnitude between 300 and 480 K. These results establish crystallographic registry in epitaxial V3O5 thin films and provide a structurally well-defined system for future studies of orientation-dependent transport.\r\nT

36 MATERIALS SCIENCE↗
DOE OSTI2021

Large magnetocaloric effect in rapidly quenched Mn 50- x Co x Ni 40 In 10 nanomaterials

The effect of Co addition on magnetic hysteresis, martensitic transformation temperature, and magnetic entropy change of rapidly-quenched Mn 50- x Co x Ni 40 In 10 alloy nanomaterials has been investigated. The melt-spun Mn 50 Ni 40 In 10 sample exhibits a small magnetic hysteresis which is further reduced by Co doping as measured between 0 and 2 T. The martensitic transformation temperature increases linearly with the electron concentration in the alloy from 195 K for Mn 50 Ni 40 In 10 to 378 K for Mn 45 Co 5 Ni 40 In 10 . The Mn 47 Co 3 Ni 40 In 10 alloy, which has phase-transition temperature close to room temperature, exhibits a substantial peak entropy change of 29.7 J kg -1 K -1 at magnetic field change of 2 T. Our results demonstrate that Mn 47 Co 3 Ni 40 In 10 nanomaterial exhibits promising magnetocaloric properties for near-room-temperature magnetic refrigeration.

Physics↗
DOE OSTI2024

Layer-by-layer assembly of a [Fe-(pyrazine){Pd(CN) 4 }] spin crossover thin film

Abstract [Fe-(pyrazine){Pd(CN) 4 }] (pyrazine = pz) thin films were fabricated using a layer-by-layer assembly approach, a method known to be tunable, versatile, and scalable, since thin films are better-suited for industrial applications. In this study, [Fe-(pz){Pd(CN) 4 }] powder was synthesized, and the results obtained from a vibrating sample magnetometer verified the presence of an abrupt hysteresis loop with widths of 45 K centered around 300 K, indicating good cooperativity. Super conducting quantum interference device magnetometry results indicated a slow spin transition with temperature but with evidence of hysteresis for thin film samples. X-ray absorption analysis provided further support of the spin crossover behavior but differs from the magnetometry because the spin state transition at the surface differs from the bulk of the thin film. X-ray photoelectron spectroscopy provided some insight into issues with the film deposition process and multiplex fitting was used to further support the claim that the surface of the film is different than the bulk of the film.

McElveen, Kayleigh A. (ORCID:0000000210302913)↗
DOE OSTI2023

Plasma catalysis: separating plasma and surface contributions for an Ar/N 2 /O 2 atmospheric discharge interacting with a Pt catalyst

Atmospheric pressure non-equilibrium plasmas can form nitrogen oxide (NO x ) compounds directly from nitrogen and oxygen without a catalyst, and at lower catalyst temperatures than would be possible without plasma. In this work, the oxidation of plasma-produced NO from an Ar/N 2 /O 2 non-equilibrium atmospheric-pressure plasma-jet (APPJ) over a platinum-on-alumina powder catalyst was investigated with in-situ infrared spectroscopy. Products downstream of the catalyst bed were analyzed along with catalyst surface species. The catalyst was exposed to plasma at both constant temperature and a cyclic temperature ramp in order to study long-lasting and transient surface changes. Primary incident reactive species to the catalyst were assessed to be NO and O 3 . Pt-Al 2 O 3 at 350 °C increased oxidation of NO relative to Al 2 O 3 or an empty chamber. The surface state of Pt-Al 2 O 3 evolves during plasma-effluent exposure and requires upwards of 20 min exposure for stabilization compared to Al 2 O 3 . Once stable surface conditions are achieved, thermal cycling reveals a repeatable hysteresis pattern in downstream products. At low temperature, oxygen and NO x accumulate on the catalyst surface and react at elevated temperatures to form NO 2 . Increasing plasma power and O 2 :N 2 ratio increases the hysteresis of the heating relative to the cooling curves in the pattern of NO 2 formation. The limitation on NO oxidation at high temperatures was assessed to be Pt-O which is depleted as the catalyst is heated. Once stored species have been depleted, NO oxidation rates are determined by incoming reactants. Two overlapping NO oxidation patterns are identified, one determined by surface reactants formed at low temperature, and the other by reactants arriving at the surface at high temperature. As a result, the plasma is responsible for providing the reactants to the catalyst surface, while the catalyst enables reaction at high temperature or storage at low temperature for subsequent reaction.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2026

Phase-controlled direct laser acceleration enabled by longitudinal variation of the laser-driven quasi-static plasma magnetic field

Direct laser acceleration (DLA) enables energy transfer from an ultra-high-intensity laser to plasma electrons and underpins many laser-driven particle and radiation-source concepts. A laser-driven azimuthal plasma magnetic field is a key player in this process: it confines energetic electrons, induces betatron oscillations, and makes possible a resonant interaction between the betatron motion and the laser field. While this betatron resonance can enhance electron energy gain, the gain itself generally drives frequency detuning and promotes largely reversible energy exchange that limits net acceleration. Here we show, using a test-electron model with prescribed fields, that a slow longitudinal increase of the quasi-static plasma magnetic field qualitatively changes DLA by introducing hysteresis in the ratio of the betatron frequency to the laser frequency experienced by the electron, so that this ratio depends on the prior evolution of the electron even at the same energy. This hysteresis enables phase control of the electron-laser energy exchange and suppresses the usual reversibility of DLA, allowing electrons to retain the acquired energy and sustain energy gain without intermittent losses.

direct laser acceleration↗
DOE OSTI2023

Polarization-controlled volatile ferroelectric and capacitive switching in Sn 2 P 2 S 6

Abstract Smart electronic circuits that support neuromorphic computing on the hardware level necessitate materials with memristive, memcapacitive, and neuromorphic- like functional properties; in short, the electronic response must depend on the voltage history, thus enabling learning algorithms. Here we demonstrate volatile ferroelectric switching of Sn 2 P 2 S 6 at room temperature and see that initial polarization orientation strongly determines the properties of polarization switching. In particular, polarization switching hysteresis is strongly imprinted by the original polarization state, shifting the regions of non-linearity toward zero-bias. As a corollary, polarization switching also enables effective capacitive switching, approaching the sought-after regime of memcapacitance. Landau–Ginzburg–Devonshire simulations demonstrate that one mechanism by which polarization can control the shape of the hysteresis loop is the existence of charged domain walls (DWs) decorating the periphery of the repolarization nucleus. These walls oppose the growth of the switched domain and favor back-switching, thus creating a scenario of controlled volatile ferroelectric switching. Although the measurements were carried out with single crystals, prospectively volatile polarization switching can be tuned by tailoring sample thickness, DW mobility and electric fields, paving way to non-linear dielectric properties for smart electronic circuits.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2022

Polariton-Based Quantum Memristors

Information processing and storage by the same physical system is emerging as a promising alternative to traditional computing platforms. In turn, this requires the realization of elementary units the memory content of which can be easily tuned and controlled. In this work, we introduce a polariton-based quantum memristor where the memristive nature arises from the intercavity polariton exchange and is controlled by a time-varying atom-cavity detuning. A dynamical hysteresis is characterized by the fluctuations in the instantaneous polariton number, where the history information is encoded into a dynamical phase. Using a Lindblad master-equation approach, we find that features of the quantum memristor dynamics, such as the area and circulation of the hysteresis loop, showcase a kind of “plasticity” controlled by quantum state initialization. This makes this quantum memristor very versatile for a wide range of applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Memristive Effects in Nanopatterned Permalloy Kagomé Array

Here, we study memristive effects in kagomé nanopatterned permalloy. We observe that at low frequencies a thermistor effect is present, a phenomenon arising due to the lithography and absent in similar experiments for thin films. However, we also show via an independent anisotropic magnetoresistive study that a small hysteresis accounting for 1% of the effect is not attributable to a thermistive effect. Such an effect is also confirmed by a careful subtraction scheme between nearby thermal hysteresis. In the millihertz regime, an effective model is provided to describe the experimental results for the thermistor, showing that there should be a crossover from the millihertz to the gigahertz, from a thermistor to a memristive effect for nanopatterned permalloy.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Topological energy barrier for skyrmion lattice formation in MnSi

We report the direct measurement of the topological skyrmion energy barrier through a hysteresis of the skyrmion lattice in the chiral magnet MnSi. Measurements were made using small-angle neutron scattering with a custom-built resistive coil to allow for high-precision minor hysteresis loops. The experimental data were analyzed using an adapted Preisach model to quantify the energy barrier for skyrmion formation and corroborated by the minimum-energy path analysis based on atomistic spin simulations. Here, we reveal that the skyrmion lattice in MnSi forms from the conical phase progressively in small domains, each of which consisting of hundreds of skyrmions, and with an activation barrier of several eV.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Strain-modulated helimagnetism and emergent magnetic phase diagrams in highly crystalline MnP nanorod films

Here, we explore strain-modulated helimagnetism in highly crystalline MnP nanorod films grown on Si(100) substrates using molecular beam epitaxy. The strained MnP film exhibits a paramagnetic to ferromagnetic (FM) phase transition at $T_C$ ~ 279 K, and the FM to helical phase transition at $T_N$ ~ 110 K. The value of $T_N$ is greater than $T_N$ ~ 47K for the MnP single crystal, indicating strong strain-modulated helimagnetic states in the MnP nanorod film. The presence of significant thermal hysteresis in the helical phase indicates the coexistence of competing magnetic interactions, leading to the first-order metamagnetic transition. Similar to its single-crystal counterpart, an anisotropic magnetic effect is observed in the MnP film, which is independently confirmed by magnetic hysteresis loop and radio-frequency transverse susceptibility (TS) measurements. The evolution of the screw to the cone and fan phases is precisely tracked from magnetization vs magnetic field/temperature measurements. The temperature dependence of the anisotropy fields, extracted from the TS spectra, yields further insight into the competing nature of the magnetic phases. Unfolding of the different helical phases at $\textit{T}$ < 120 K (~$T_N$) is analyzed by the temperature- and field-dependent magnetic entropy change. Based on these findings, the comprehensive magnetic phase diagrams of the MnP nanorod film are constructed for both the in-plane and out of plane magnetic field directions, revealing emergent strain/dimensionality-driven helical magnetic features that are absent in the magnetic phase diagram of the MnP single crystal.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Vibrational properties of CuInP 2 S 6 across the ferroelectric transition

In order to explore the properties of a two-sublattice ferroelectric, we measured the infrared and Raman scattering response of CuInP 2 S 6 across the ferroelectric and glassy transitions and compared our findings to a symmetry analysis, calculations of phase stability, and lattice dynamics. In addition to uncovering displacive character and a large hysteresis region surrounding the ferroelectric transition temperature T C , we identify the vibrational modes that stabilize the polar phase and confirm the presence of two ferroelectric variants with opposite polarizations. Below T C , a poorly understood relaxational or glassy transition at T g is characterized by local structure changes in the form of subtle peak shifting and activation of low frequency out-of-plane Cu- and In-containing modes. Here, the latter are due to changes in the Cu/In coordination environments and associated order-disorder processes. Moreover, T g takes place in two steps with another large hysteresis region and significant underlying scattering. Combined with imaging of the room temperature phase separation, this effort lays the groundwork for studying CuInP 2 S 6 under external stimuli and in the ultrathin limit.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Chemical control of polarization in thin strained films of a multiaxial ferroelectric: Phase diagrams and polarization rotation

The emergent behaviors in thin films of a multiaxial ferroelectric (FE) due to electrochemical coupling between the rotating polarization and surface ions are explored within the framework of the 2–4 Landau-Ginzburg-Devonshire (LGD) thermodynamic potential combined with the Stephenson-Highland (SH) approach. The combined LGD-SH approach allows us to describe the electrochemical switching and rotation of a polarization vector in a multiaxial ferroelectric film covered by surface ions with a charge density defined by the oxygen pressure. In this work, we calculate phase diagrams, analyze the dependence of polarization components on the applied voltage, and discuss the peculiarities of quasistatic ferroelectric, dielectric, and piezoelectric hysteresis loops in thin strained multiaxial ferroelectric films. The nonlinear surface screening by oxygen ions makes the diagrams very different from the known diagrams of, e.g., strained BaTiO 3 films. Quite unexpectedly, we predict the appearance of ferroelectric reentrant phases. The obtained results point to the possibility to control the appearance and features of ferroelectric, dielectric, and piezoelectric hysteresis in multiaxial FE films covered with surface ions by varying their concentration via the partial oxygen pressure. The LGD-SH description of a multiaxial FE film can be further implemented within the Bayesian optimization framework, paving the way toward predictive materials optimization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Thermal hysteretic behavior and negative magnetoresistance in the charge density wave material EuTe 4

EuTe 4 is a van der Waals material exhibiting a charge density wave (CDW) with a large thermal hysteresis in the resistivity and CDW gap. In this paper, we systematically study the electronic structure and transport properties of EuTe 4 using high-resolution angle-resolved photoemission spectroscopy (ARPES), magnetoresistance (MR) measurements, and scanning tunneling microscopy (STM). Here, we observe a CDW gap of ~ 200meV at low temperatures that persists up to 400 K, suggesting that the CDW transition occurs at a much higher temperature. The ARPES intensity near the Fermi level shows large thermal hysteretic behavior, consistent with the resistivity measurement. The hysteresis in the resistivity measurement does not change under a magnetic field up to 7 T, excluding the thermal magnetic hysteretic effect. Instead, the surface topography measured with STM shows surface domains with different CDW trimerization directions, which may be important for the thermal hysteretic behavior. Interestingly, we reveal a large negative MR at low temperatures that can be associated with the canting of magnetically ordered Eu spins. Our results shed light on the understanding of magnetic, transport, and electronic properties of EuTe 4 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗