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Strongly correlated materials exhibiting phase transitions which can be controlled through external stimuli, such as electric fields, are promising for future computing technologies beyond conventional semiconductor transistors. Devices that take advantage of structural phase transitions have inherent built‐in memory, reminiscent of synapses and neurons, and are thus natural candidates for neuromorphic computing. Of particular interest are phase‐change oxides, which allow for control over the metal‐to‐insulator transition. Here, X‐ray nano‐diffraction structural imaging of micro‐devices fabricated with the archetypal phase‐change material vanadium sesquioxide (V 2 O 3 ) is reported. The devices contain a Ga ion‐irradiated region where the metal‐to‐insulator transition critical temperature is lowered, a useful feature for controlling neuron‐like spiking behavior. Results show that strain, induced by crystal lattice mismatch between the pristine and irradiated material, leads to a suppression of the metal‐to‐insulator‐transition. Suppression occurs within the irradiated region or along its edges, depending on the defect‐distribution and the size of the region. The observed self‐straining effect can extend to other phase‐change oxides and dominate as device dimensions are reduced and become too small to dissipate strain within the irradiated region. The findings are important for phase engineering in phase‐change devices and highlight the necessity to study phase transitions at the nanoscale.
Here, neutron detectors fabricated from 10B enriched hexagonal boron nitride (h- 10 BN or h-BN) epilayers have demonstrated the highest thermal neutron detection efficiency among solid-state neutron detectors to date at about 53%. In this work, photoconductive-like vertical detectors with a detection area of 1 × 1 mm 2 were fabricated from 50 μm thick free-standing h-BN epilayers using Ni/Au and Ti/Al bilayers as ohmic contacts. Leakage currents, mobility-lifetime (μτ) products under UV photoexcitation, and neutron detection efficiencies have been measured for a total of 16 different device configurations. The results have unambiguously identified that detectors incorporating the Ni/Au bilayer on both surfaces as ohmic contacts and using the negatively biased top surface for neutron irradiation are the most desired device configurations. It was noted that high growth temperatures of h- 10 BN epilayers on sapphire substrates tend to yield a higher concentration of oxygen impurities near the bottom surface, leading to a better device performance by the chosen top surface for irradiation than by the bottom. Preferential scattering of oxygen donors tends to reduce the mobility of holes more than that of electrons, making the biasing scheme with the ability of rapidly extracting holes at the irradiated surface while leaving the electrons to travel a large average distance inside the detector at a preferred choice. When measured against a calibrated 6 LiF filled micro-structured semiconductor neutron detector, it was shown that the optimized configuration has pushed the detection efficiency of h-BN neutron detectors to 58%. These detailed studies also provided a better understanding of growth-mediated impurities in h-BN epilayers and their effects on the charge collection and neutron detection efficiencies.
We investigate strategies to suppress phase separation and reduce threading dislocation density (TDD) in AlGaInAs compositionally graded buffers (CGBs) that span the lattice constant range from GaAs to InP. Combining the results from high resolution x-ray diffraction, cathodoluminescence, transmission electron microscopy, and photovoltaic device measurements, we correlate the choices of epitaxial growth conditions with the defect structure of the CGBs and subsequent device performance. Both the use of substrates with high misorientation off (100) toward the (111)A plane and Zn doping instead of Si doping are shown to suppress phase separation and reduce TDD. We demonstrate a 0.74 eV GaInAs device grown on a GaAs substrate offcut 19.5° toward (111)A using a Zn-doped AlGaInAs CGB with TDD = 3.5 ± 0.2 × 10 6 cm -2 that has a bandgap-open circuit voltage offset of only 0.434 V measured under the AM1.5G solar spectrum. We characterized this device under high-intensity irradiance from a 1570 nm laser and measured a 31.9% peak laser power conversion efficiency at 3.6 W/cm 2 irradiance. These results provide a roadmap to the manufacture of laser- and thermal-power conversion devices with the performance and cost-effectiveness needed to drive adoption of these technologies at scale.
The purpose of this testing was to examine the potential for destructive single event effects (SEE) in Broadcom’s ACPL-785E optocoupler in support of a NASA GSFC flight program. SEE testing was conducted NASA Space Radiation Laboratory (NSRL) at Brookhaven National Laboratory where devices with unmodified packaging were irradiated with high energy ions that have sufficient range to pass through the packaging of the device.
Due to market and regulatory pressures, many healthcare manufacturers are considering alternatives to cobalt-60 gamma radiation, including accelerator-based electron beam (E-beam) and X-ray radiation for product sterilization. In this work, the effects of irradiation on a representative medical product, comprised of eight distinct polymer materials, were directly compared for three radiation technologies – cobalt-60 gamma, E-beam, and X-ray – at four dose levels (15, 25, 50, and 70 kGy). The objective was to determine how radiation effects (deleterious or beneficial) are influenced by source and dose level, with the specific goal of determining whether E-beam radiation and/or X-ray radiation could be viable alternatives to gamma radiation for device sterilization. Here, the specific product considered is a single-use medical device for orthopedic surgery, the Stryker Instruments MixeVac III bone cement mixer, which is currently sterilized using gamma radiation from cobalt-60 sources. Following ASTM International standards and input from the manufacturer, we characterized the effects of the three radiation sources on product functionality as well as on the mechanical and optical properties of the constituent polymers. Results indicate that although measurable differences in properties between the standard gamma irradiated materials and the alternative E-beam and X-ray irradiated materials were observed, those differences were small. Statistically significant differences were noted in the case of yellowness index for polyvinyl chloride, high-density polyethylene, and polycarbonate, and in the case of tensile elongation at break for high impact polystyrene and polyvinyl chloride. In general, the results of this study support the viability of E-beam and X-ray radiation as alternative options to cobalt-60 gamma radiation for sterilization of Stryker single-use universal bone cement mixer medical devices.
Electrical performance and defect characterization of vertical GaN P-i-N diodes before and after irradiation with 2.5 MeV protons and neutrons is investigated. Devices exhibit increase in specific on-resistance following irradiation with protons and neutrons, indicating displacement damage introduces defects into the p-GaN and n- drift regions of the device that impact on-state device performance. The breakdown voltage of these devices, initially above 1700 V, is observed to decrease only slightly for particle fluence <; 10 13 cm -2 . Furthermore, the unipolar figure of merit for power devices indicates that while the on-resistance and breakdown voltage degrade with irradiation, vertical GaN P-i-Ns remain superior to the performance of the best available, unirradiated silicon devices and on-par with unirradiated modern SiC-based power devices.
Seismic isolators and damping devices have been used for 30+ years to reduce seismic forces and deployed in 10,000+ structures, including bridges, buildings, and mission-critical infrastructure. Studies have shown that seismic isolation of nuclear power plants can reduce the seismic risk by several orders of magnitude and substantially reduce the overnight capital cost. Advanced reactor developers are considering seismic isolation as an integral design feature in their reactor design. It can either be deployed at the building level, isolating the entire reactor building, or at the component level, isolating individual pieces of safety-class equipment, such as a reactor vessel or a steam generator. For equipment isolation, located close to the reactor vessel, the seismic isolators and/or damping devices may be exposed to gamma and neutron radiation, with a possible effect on their mechanical properties which would affect the response of the isolated equipment under earthquake shaking. The Department of Energy, as part of its Nuclear Energy University Program (NEUP), in collaboration with the Idaho National Laboratory (INL), is funding a project at the University at Buffalo (UB) to investigate the effect of gamma radiation on the mechanical properties of various seismic protective devices. (When isolating equipment, the seismic protective devices will be located outside the reactor vessel where the neutron exposure will be insignificant.
It is shown that NO{sub 2} present in air, beginning at a concentration of 1 ppm, can be selectively detected by sensors based on Au/WO{sub 3}:Au thin films activated by laser diode radiation with maximum intensity at 400 nm instead of constant heating. The radiation-activated photodesorption reduces the time of sensor response to NO{sub 2}. A high humidity of air under conditions of room-temperature irradiation additionally increases the device sensitivity to NO{sub 2} due to the appearance of additional adsorption sites. The absence of a sensor response to reducing gases and varying oxygen concentration in the atmosphere is caused by the photodesorption of chemisorbed O{sub 2}{sup −} species during their interaction with holes generated in intrinsic optical transitions in the near-surface region of WO{sub 3} film.
Strain measurements using X-ray diffraction were performed on irradiated commercial and radiation-hardened metal gate CMOS devices in addition to polysilicon gate NMOS devices. I-V curves were taken and V(ot) and V(it) were separated using the subthreshold slope method for all devices. A correlation has been shown to exist between physical strain relaxation and the electrical properties as a function of radiation dose and recovery. Data shown suggest that the physical response (strain relaxation) in the silicon at the oxide interface is a measure of the type of damage induced and the recovery mechanism. Postradiation measurements of Delta V(it) and Delta V(ot) taken immediately after irradiation support the conclusions of V. Zekeriya and T.-P. Ma (1983) and K. Kasama et al. (1986, 1987); compressive stress at the silicon/SiO2 interface does reduce radiation damage in the device.
The results of a static test of total ionizing dose (TID) effects on an ISSI 4Mb PSRAM memory are reported in this work. The irradiation was performed at the IEAv’s Laboratory of Ionizing Radiation with 1.17 and 1.32 MeV gamma-rays from a {sup 60}Co source at a dose rate of 2.5 krad/h up to an accumulated dose of 215.7 krad. The TID threshold for bit flip found in this experiment was 52.5 krad. From a sampling of 4096 memory addresses it was estimated a bit flip rate of approximately 50% at an accumulated dose of 215.7 krad.
The valence and conduction band offsets of Zn{sub 1−x}Cd{sub x}O/ZnO hetero-junctions deposited by pulsed laser deposition technique were estimated by X-ray photoelectron, valence band, and UV-visible spectroscopy. Type-II band alignment (staggered gap) with ratios of conduction band to valence band offsets (ΔE{sub C}/ΔE{sub V}) was found to be 0.77 and 0.59 for Zn{sub 0.95}Cd{sub 0.05}O/ZnO and Zn{sub 0.90}Cd{sub 0.10}O/ZnO hetero-structures, respectively, which can be used in longer wavelength regime optoelectronic devices. The higher value of valence band offset as compared to conduction band offset suggests that the transport at interface is mainly due to electrons.
Thermoelectric materials were subjected to high fluence neutron irradiation in order to understand the effect of radiation damage on transport properties. This paper is relevant to the NASA Radioisotope Thermoelectric Generator (RTG) program in which thermoelectric elements are exposed to radiation over a long period of time in space missions. Selected n-type and p-type bismuth telluride materials were irradiated at the High Flux Isotope Reactor with a neutron fluence of 1.3 × 10 18 n/cm 2 (E > 0.1 MeV). The increase in the Seebeck coefficient in the n-type material was partially off-set by an increase in electrical resistivity, making the power factor higher at lower temperatures. For the p-type materials, although the Seebeck coefficient was not affected by irradiation, electrical resistivity decreased slightly. The figure of merit, zT, showed a clear drop in the 300–400 K range for the p-type material and an increase for the n-type material. Considering that the p-type and n-type materials are connected in series in a module, the overall irradiation damages at the device level were limited. Finally, these results, at neutron fluences exceeding a typical space mission, are significant to ensure that the radiation damage to thermoelectrics does not affect the performance of RTGs.
Sealed radioactive sources are encountered in a wide variety of settings – from household smoke detectors and instrument check sources, through fixed industrial gauges, industrial radiography and well logging sources, to irradiators and medical teletherapy devices. In general, the higher the level of activity in the sealed source, the stricter the regulatory control that is applied to its use, control and ultimate disposition. Lower levels of attention and oversight can and do lead to sources ending up in the wrong place – as orphan sources in uncontrolled storage, disposed in a sanitary landfill, melted down in metal recycling operations and incorporated into consumer products, or handled by an unsuspecting member of the public. There are a range of issues that contribute to the problem of improper disposal of sealed sources, and, in particular, to disused source disposal. General licensed sources and devices are particularly at risk of being disposed incorrectly. Higher activity general licensed sources, although required to be registered with the Nuclear Regulatory Commission (NRC) or Agreement State, receive limited regulatory oversight and are not tracked on a national scale. Users frequently do not consider the full life-cycle costs when procuring sources or devices and discover that they cannot afford to package, transport and dispose of their sources properly. The NRC requirements for decommissioning funding plans and financial assurance are not adequate to cover sealed source transport and disposal costs fully. While there are regulatory limits for storage of disused sources, enforcement is limited and there is no financial incentive for owners to dispose of the sources. In some cases, the lack of availability of approved Department of Transportation (DOT) Type B shipping casks also presents a barrier to sealed source disposal. The report of the Disused Sources Working Group does an excellent job of framing these issues. This article reviews both the issues and the report’s recommendations, which are designed to improve sealed source control and encourage proper disposal of disused sources.
Purpose: To estimate the dose delivered to a moving lung tumor by proton therapy beams of different modulation types, and compare with Monte Carlo predictions. Methods: A radiology support devices (RSD) phantom was irradiated with therapeutic proton radiation beams using two different types of modulation: uniform scanning (US) and double scattered (DS). The Eclipse© dose plan was designed to deliver 1.00Gy to the isocenter of a static ∼3×3×3cm (27cc) tumor in the phantom with 100% coverage. The peak to peak amplitude of tumor motion varied from 0.0 to 2.5cm. The radiation dose was measured with an ion-chamber (CC-13) located within the tumor. The time required to deliver the radiation dose varied from an average of 65s for the DS beams to an average of 95s for the US beams. Results: The amount of radiation dose varied from 100% (both US and DS) to the static tumor down to approximately 92% for the moving tumor. The ratio of US dose to DS dose ranged from approximately 1.01 for the static tumor, down to 0.99 for the 2.5cm moving tumor. A Monte Carlo simulation using TOPAS included a lung tumor with 4.0cm of peak to peak motion. In this simulation, the dose received by the tumor varied by ∼40% as the period of this motion varied from 1s to 4s. Conclusion: The radiation dose deposited to a moving tumor was less than for a static tumor, as expected. At large (2.5cm) amplitudes, the DS proton beams gave a dose closer to the desired dose than the US beams, but equal within experimental uncertainty. TOPAS Monte Carlo simulation can give insight into the moving tumor — dose relationship. This work was supported in part by the Philips corporation.
The simulation of reversible single events in test samples of static memory microcircuits with design norms of 0.5, 0.35, 0.25, and 0.1 μm under the effect of neutron fluxes with various energies is performed. It is shown theoretically and experimentally that reversible single events can occur in modern microelectronics and nanoelectronics products under the effect of a fission-spectrum neutron flux caused by the passage of primary recoil atoms and nuclear reaction products along the microcircuit surface perpendicularly to the electric current lines in the near-drain transistor area. A series of irradiation experiments of static memory circuits with design norms of 0.35 μm is interpreted based on the proposed model.
We observed a temperature-controlled increase in the magnetic anisotropy and its dispersion in thin GaMnSb films with MnSb nanoinclusions obtained by pulsed laser deposition. The data of transmission electron microscopy indicate that in the samples, a transition of the crystalline structure of magnetic MnSb nanoinclusions from hexagonal (spatial group (sp. gr.) P6{sub 3}/mmc) to cubic (sp. gr. F-43m) takes place. Analysis of the temperature dependences of the magnetic moment m(T), measured using a SQUID magnetometer, obtained for both unannealed and annealed samples cooled in a zero magnetic field and a magnetic field of 10 kOe, indicates that this mechanism is not unique. In unannealed samples, the distribution of the magnetic anisotropy of MnSb nanoinclusions, determined from the dependences of m(T), is unimodal. In the annealed samples, the same dependence becomes multimodal. This means that several thermally activated processes occur in the samples during annealing, resulting in several “populations” of nanoinclusions present in the annealed thin films. The contribution to the increase in the magnetic anisotropy during annealing can result in the structural phase transition, the mismatch of the crystal lattices between MnSb and GaSb, an increase in the average volume of MnSb nanoinclusions, and a change in their stoichiometry.
This report presents the results of Sandia National Laboratories’ (SNL) contribution to IAEA CRP F11016 as mostly raw data. The goal of this CRP is to study the effects of radiation on semiconductors and insulators with the emphasis on the effect of displacement damage due to MeV energy ions on the performance of semiconductor detectors and microelectronic devices. SNL is tasked with performing electrical characterization, irradiation, and IBIC, DLTS, C-V measurements on devices used in the CRP, as well as calculating damage and ionization profiles for modeling.