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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
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NASA NTRS1998

A Review of Recent Thermophotovoltaic Energy Conversion Technology Development at NASA Lewis Research Center

NASA Lewis Research Center (LeRC) has had an ongoing research program in TPV since the late 1980's. This effort has included both in-house research programs on critical components such as photovoltaic cells (PV) and emitter materials, as well as an active contracting effort directed toward system, and component development. Of particular note is the in-house development of thin film selective emitters fabricated from rare-earth yttrium aluminum garnets (YAG). Also developed at LeRC is a Monolithic Interconnect Module (MIM) consisting of many small InGaAs cells series interconnected on a single InP substrate. An infrared reflector placed on the rear surface of the substrate returns unabsorbed photons to the emitter for recycling. The current contracted efforts include two TPV system developments by Tecogen, Inc., a solar powered TPV system development, a GaInAsSb cell development and several emitter development efforts (plasma-sprayed selective emitters, flexible SiC and a selective emitting light pipe).

Wilt, David M.↗
NASA NTRS1998

SPARCLE: Validation of Observing System Simulations (SPace Readiness Coherent Lidar Experiment)

NASA recently approved a mission to fly a Doppler Wind Lidar (DWL) on a U.S. Space Shuttle. SPARCLE, managed by Marshall Space Flight Center in Huntsville, AL, is targeted for launch in March 2001. This mission is viewed as a necessary demonstration of a solid state (2 micron) lidar using coherent detection before committing resources to a 3-5 year research or operational mission. While, to many, this shuttle mission is seen as the first step in a series leading to a fully operational wind observing system, to others, it is a chance to validate predictions of performance based upon theoretical models, analyses of airborne and ground-based data, and sophisticated observing system simulation experiments. This paper will be presented in two parts: first a brief overview of the SPARCLE mission and second, a summary of current performance predictions and key contributions from ground- based and airborne DWL research. The SPARCLE instrument is a 100 mJ, 6 Hz, diode-pumped 2-micron laser with a .25 m telescope using heterodyne mixing in a fiber and an InGaAs detector. A 25 cm silicon wedge scanner will be used in step-stare modes with dwells ranging from 60 seconds to .5 seconds. Pointing knowledge is achieved with a dedicated GPS/INS mounted close to the lidar. NASA's Hitchhiker program is providing the instrument enclosures (2 cans) and mission logistics support. An on-board data system is sized to record 150 Gbytes of raw signal from a two 400 MHZ A/D converters. On-board signal processing will be used to control the frequency of the Local Oscillator. SPARCLE is predicted to have a single shot backscatter sensitivity near 1x10(exp -6) m-1 sr-1, To achieve higher sensitivity, shot accumulation will be employed. Ground-based, 2 micron DWLs have been used to assess the benefits of shot accumulation (approximately SQRT for SNR). Airborne programs like MACAWS have provided good datasets for evaluating various sampling strategies and signal processing algorithms. Using these real data to calibrate our simulation models, we can describe when and how well SPARCLE is expected to preform. Outputs from these performance models will be presented.

Emmitt, G. D.↗
NASA NTRS1996

Influence of Hot Carrier Transport on the Transient Response of an InGaAs/InAlAs Metal-Semiconductor Schottky Diode Structure

The calculated transient characteristic of a heterostructure, rectifying contact is theoretically examined. It is found that hot carrier transport drastically affects the output terminal characteristics of the heterostructure Schottky contact and, hence, the working of a blocking contact. This is of importance to the understanding of InGaAs MSM devices in particular, as well as any structure which contains a blocking contact in general.

Salem, Ali F.↗
NASA NTRS2000

Growth and Characterization of III-V Semiconductors for Device Applications

The research goal was to achieve a fundamental understanding of the physical processes occurring at the surfaces and interfaces of epitaxially grown InGaAs/GaAs (100) heterostructures. This will facilitate the development of quantum well devices for infrared optical applications and provide quantitative descriptions of key phenomena which impact their performance. Devices impacted include high-speed laser diodes and modulators for fiber optic communications at 1.55 micron wavelengths and intersub-band lasers for longer infrared wavelengths. The phenomenon of interest studied was the migration of indium in InGaAs structures. This work centered on the molecular beam epitaxy reactor and characterization apparatus donated to CAU by AT&T Bell Laboratories. The material characterization tool employed was secondary ion mass spectrometry. The training of graduate and undergraduate students was an integral part of this program. The graduate students received a thorough exposure to state-of-the-art techniques and equipment for semiconductor materials analysis as part of the Master''s degree requirement in physics. The undergraduates were exposed to a minority scientist who has an excellent track record in this area. They also had the opportunity to explore surface physics as a career option. The results of the scientific work was published in a refereed journal and several talks were presented professional conferences and academic seminars.

Williams, Michael D.↗
NASA NTRS2000

InGaP/InGaAs-on-Ge Concentrator Solar Cell for Space Power Generation

The passivating front and back window layer of the top cell has been chosen. We have chosen to use InGaAs as the tunnel junction interconnect compound since it is easily degenerately doped. All of the dual junction cell structures were grown on GaAs substrates. Time constraints prevented us from completing the development of the GaAs-on-Ge growth process. Analysis of the I-V and EQE data, and comparison with computer-modeled data, shows that the performance of the dual-junction cell is still being controlled by the bottom cell, in spite of top cell thinning. Further improvement in the dual-junction cell efficiency is possible by thinning the front window.

Sinharoy, Samar↗
NASA NTRS2004

Novel Infrared Phototransistors for Atmospheric CO2 Profiling at 2 Micron Wavelength

Two-micron detectors are critical for atmospheric carbon dioxide profiling using the lidar technique. The characterization results of a novel infrared AlGaAsSb/ InGaAsSb phototransistor are reported. Emitter dark current variation with the collector-emitter voltage at different temperatures is acquired to examine the gain mechanism. Spectral response measurements resulted in responsivity as high as 2650 A/W at 2.05 m wavelength. Bias voltage and temperature effects on the device responsivity are presented. The detectivity of this device is compared to InGaAs and HgCdTe devices.

Refaat, Tamer F.↗
NASA NTRS2004

Novel Infrared Phototransistors for Atmospheric CO2 Profiling at 2 microns Wavelength

Two-micron detectors are critical for atmospheric carbon dioxide profiling using the lidar technique. The characterization results of a novel infrared AlGaAsSb/ InGaAsSb phototransistor are reported. Emitter dark current variation with the collector-emitter voltage at different temperatures is acquired to examine the gain mechanism. Spectral response measurements resulted in responsivity as high as 2650 A/W at 2.05 microns wavelength. Bias voltage and temperature effects on the device responsivity are presented. The detectivity of this device is compared to InGaAs and HgCdTe devices.

Refaat, Tamer F.↗
NASA NTRS2004

Fabrication of a novel gigabit/second free-space optical interconnect - photodetector characterization and testing and system development

The time when computing power is limited by the copper wire inherent in the computer system and not the speed of the microprocessor is rapidly approaching. With constant advances in computer technology, many researchers believe that in only a few years, optical interconnects will begin to replace copper wires in your Central Processing Unit (CPU). On a more macroscopic scale, the telecommunications industry has already made the switch to optical data transmission as, to date, fiber optic technology is the only reasonable method of reliable, long range data transmission. Within the span of a decade, we will see optical technologies move from the macroscopic world of the telecommunications industry to the microscopic world of the computer chip. Already, the communications industry is marketing commercially available optical links to connect two personal computers, thereby eliminating the need for standard and comparatively slow wired and wireless Ethernet transfers and greatly increasing the distance the computers can be separated. As processing demands continue to increase, the realm of optical communications will continue to move closer to the microprocessor and quite possibly onto the microprocessor itself. A day may come when copper connections are used only to supply power, not transfer data. This summer s work marks some of the beginning stages of a 5 to 10 year, long-term research project to create and study a free-space, 1 Gigabit/sec optical interconnect. The research will result in a novel fabricated, chip-to-chip interconnect consisting of a Vertical Cavity Surface Emitting Laser (VCSEL) Diode linked through free space to a Metal- Semiconductor-Metal (MSM) Photodetector with the possible integration of microlenses for signal focusing and Micro-Electromechanical Systems (MEMS) devices for optical signal steering. The advantages, disadvantages, and practicality of incorporating flip-chip mounting technologies will also be addressed. My work began with the design and construction of a test setup for the experiment and then appropriate characterization of the test system. Specifically, I am involved in the characterization of a commercially available 1550nm wavelength, 5mW diode laser and a study of its modulation bandwidth. Commercially produced photodetectors as well as the incorporation of microwave technology, in the form of RF input and output, are used in the characterization procedure. The next stage involves the use of a probe station and network analyzer to characterize and test a series of photodetectors fabricated on a 2 inch, Indium Gallium Arsenide (InGaAs) wafer in the Branch s microlithography lab. Other project responsibilities include, but are not limited to the incorporation of a transimpedance amplifier to the photodetector circuit; a study of VCSEL technology; bit error rate analysis of an optical interconnect system; and analysis of free space divergence of the VCSEL, optical path length of the interconnect; and any other pertinent optical properties of the one gigabit per second interconnect for fabrication and testing.

Savich, Gregory R.↗
NASA NTRS2001

Mars Array Technology Experiment Developed to Test Solar Arrays on Mars

Solar arrays will be the power supply for future missions to the planet Mars, including landers, rovers, and eventually human missions to explore the Martian surface. Until Mars Pathfinder landed in July 1997, no solar array had been used on the surface. The MATE package is intended to measure the solar energy reaching the surface, characterize the Martian environment to gather the baseline information required for designing power systems for long-duration missions, and to quantify the performance and degradation of advanced solar cells on the Martian surface. To measure the properties of sunlight reaching the Martian surface, MATE incorporates two radiometers and a visible/NIR spectrometer. The radiometers consist of multiple thermocouple junctions using thin-film technology. These devices generate a voltage proportional to the solar intensity. One radiometer measures the global broadband solar intensity, including both the direct and scattered sunlight, with a field of view of approximately 130. The second radiometer incorporates a slit to measure the direct (unscattered) intensity radiation. The direct radiometer can only be read once per day, with the Sun passing over the slit. The spectrometer measures the global solar spectrum with two 256-element photodiode arrays, one Si sensitive in the visible range (300 to 1100 nm), and a second InGaAs sensitive to the near infrared (900 to 1700 nm). This range covers 86 percent of the total energy from the Sun, with approximately 5-nm resolution. Each photodiode array has its own fiber-optic feed and grating. Although the purpose of the MATE is to gather data useful in designing solar arrays for Mars surface power systems, the radiometer and spectrometer measurements are expected to also provide important scientific data for characterizing the properties of suspended atmospheric dust. In addition to measuring the solar environment of Mars, MATE will measure the performance of five different individual solar cell types and two different solar cell strings, to qualify advanced solar cell types for future Mars missions. The MATE instrument, designed for the Mars-2001 Surveyor Lander mission, contains a capable suite of sensors that will provide both scientific information as well as important engineering data on the operation of solar power systems on Mars. MATE will characterize the intensity and spectrum of the solar radiation on Mars and measure the performance of solar arrays in the Mars environment. MATE flight hardware was built and tested at the NASA Glenn Research Center and is ready for flight.

Landis, Geoffrey A.↗
NASA NTRS2005

III-V Compound Detectors for CO2 DIAL Measurements

Profiling of atmospheric carbon dioxide (CO2) is important for understanding the natural carbon cycle on Earth and its influence on global warming and climate change. Differential absorption lidar is a powerful remote sensing technique used for profiling and monitoring atmospheric constituents. Recently there has been an interest to apply this technique, at the 2 m wavelength, for investigating atmospheric CO2. This drives the need for high quality detectors at this wavelength. Although 2 m detectors are commercially available, the quest for a better detector is still on. The detector performance, regarding quantum efficiency, gain and associated noise, affects the DIAL signal-to-noise ratio and background signal, thereby influencing the instrument sensitivity and dynamic range. Detectors based on the III-V based compound materials shows a strong potential for such application. In this paper the detector requirements for a long range CO2 DIAL profiles will be discussed. These requirements were compared to newly developed III-V compound infrared detectors. The performance of ternary InGaSb pn junction devices will be presented using different substrates, as well as quaternary InGaAsSb npn structure. The performance study was based on experimental characterization of the devices dark current, spectral response, gain and noise. The final results are compared to the current state-of-the-art InGaAs technology. Npn phototransistor structure showed the best performance, regarding the internal gain and therefore the device signal-to-noise ratio. 2-micrometers detectivity as high as 3.9 x 10(exp 11) cmHz(sup 1/2)/W was obtained at a temperature of -20 C and 4 V bias voltage. This corresponds to a responsivity of 2650 A/W with about 60% quantum efficiency.

Refaat, Tamer F.↗
NASA NTRS2005

Near-Infrared Single-Photon-Counting Detectors for Laser Instrument Applications at NASA Goddard Space Flight Center

We discuss single-photon-counting detectors requirements for NASA remote sensing and communications systems. We present experimental measurements on several different near-infrared single-photon-counting detectors including InGaAs/InP and InGaAs/InAlAs avalanche photodiodes (APD), an InGaAsP photocathode hybrid photomultiplier (PMT) and an InGaAs photomultiplier. We present the experimental performance of prototype instruments for laser ranging, communication, and trace-gas detection that use these detectors.

Krainak, Michael A.↗
NASA NTRS2006

Two-micron Detector Development using Sb-based Material Systems

NASA Langley Research Center (LaRC), in partnership with the University of Delaware (UD), developed AlGaAsSb/InGaAsSb custom-designed phototransistors in the 0.6-2.5 micron wavelength range for applications to laser remote sensing. The phototransistor s performance greatly exceeds the previously reported results at this wavelength range in the literature. The performances of the custom-designed phototransistor, such as responsivity, detectivity, and gain, are improved significantly as compared to the previously published detectors as well as commercial detectors. Detection in the 0.6- to 2.5- micron broadband with a single phototransistor will result in reduction or elimination of heavy and complex optical components now required for multiple wavelength detection in atmospheric remote sensors resulting in smaller, lighter, simpler instruments with higher performance. This high performance broadband phototransistor will eliminate the need for high power laser for active remote sensing and also the Si (1.0- micron cutoff) and InGaAs (extended 2.3- micron cutoff) detectors. The developed broadband phototransistor will be applicable for the next generation of space-based Earth observations and other planetary instruments for active and passive remote sensing with substantial reduction in size, complexity, and weight to measure water vapor, methane, and carbon dioxide in planetary atmospheres as well as aerosol, cloud, water vapor, O2, CO, and CO2 for a broad range of applications to Earth and Space Science Missions under Science Mission Directorate (SMD) research programs.

Abedin, M. N.↗
NASA NTRS2004

T-shaped emitter metal heterojunction bipolar transistors for submillimeter wave applications

We report on the development of submillimeter wave transistors at JPL. The goal of the effort is to produce advance-reliable high frequency and high power amplifiers, voltage controlled oscillators, active multipliers, and high-speed mixed-signal circuits for space borne applications. The technology in development to achieve this is based on the Indium Phosphide (InP) Heterojunction Bipolar Transistor (HBT). The HBT is well suited for high speed, high power and uniform (across wafer) performance, due to the ability to tailor the material structure that electrons traverse through by well-controlled epitaxial growth methods. InP with its compatible lattice matched alloys such as indium gallium arsenide (InGaAs) and indium aluminium arsenide (InAlAs) provides for high electron velocities and high voltage breakdown capabilities. The epitaxial methods for this material system are fairly mature, however the implementation of high performance and reliable transistors are still under development by many laboratories. Our most recently fabricated, second generation mesa HBTs at JPL have extrapolated current gain cutoff frequency (FJ of 142GHz and power gain cutoff frequency (Fm,) of approximately 160GHz. This represents a 13% and 33% improvement of Ft and F, respectively, compared to the first generation mesa HBTs [l]. Analysis based on the University of California, Santa Barbara (UCSB) device model, RF device characteristics can be significantly improved by reducing base contact resistance and base metal contact width. We will describe our effort towards increasing transistor performance and yield.

transistor↗
NASA NTRS2006

A Lidar for Making Range Resolved CO2 Measurements within the Planetary Boundary Layer

A ground based differential absorption lidar is under development at NASA's Goddard Space Flight Center to make range resolved measurements of CO2 within the planetary boundary layer. This is a direct detection lidar designed for both photon counting and analog use. Technology being developed for this instrument will be discussed including efforts in fiber lasers, optical parametric amplifiers and both InGaAs and HgCdTe solid-state detectors. The capabilities of this system are investigated and preliminary results presented.

Burris, John↗