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At least 199 records · Page 11

Phase Change Materials for Photonics in NASA Science and Space Missions

Phase change materials (PCMs) such as Ge2Sb2Te5, Ge2Sb2Se4Te1, and Sb2S3have recently emerged as a promising platform to control light on-chip due to their fast, dramatic, and reversible change in refractive index. Significant technical progress in the field has been achieved in terms of improving optical transparency, controlling PCMs both optically and electrically, and integrating with complex photonic circuits, leading to exciting applications. When PCMs are mated with metasurfaces, devices are capable of controlling the phase and amplitude of propagating light with arrays of subwavelength structures. These enhance tunability and reconfigurability and continue to redefine the boundaries of optical sciences. PCM-based metasurface optics also help to accelerate the adoption of new architectures with reduced size, weight, and power (SWaP) for science and space mission platforms at NASA. In this talk, I will introduce two NASA-lead PCM photonic projects: 1. P-ACTIVE (PCM-based actively tunable filter) for broad imaging and sensing applications – from probing molecular vibrations in chemical species to detecting radiant thermal signatures of the space launch system. 2. PROWESS (Phase change reconfigurable optical wavefront synthesis system) as a beam steerer for both Earth and space LiDAR and free space optical communication applications. From this seminar, the attendees will be exposed not only to PCM-based photonic technologies but also NASA missions including the MISSE (Materials on the International Space Station Experiment) test campaign that was conducted to expose PCMs and PCM-based metasurfaces in space for 6 months in 2022.

phase change material↗

Paradigm for universal quantum information processing with integrated acousto-optic frequency beamsplitters

Frequency-bin encoding offers tremendous potential in quantum photonic information processing, in which a single waveguide can support hundreds of lightpaths in a naturally phase-stable fashion. This stability, however, comes at a cost: arbitrary unitary operations can be realized by cascaded electro-optic phase modulators and pulse shapers, but require nontrivial numerical optimization for design and have thus far been limited to discrete tabletop components. In this article, we propose, formalize, and computationally evaluate a new paradigm for universal frequency-bin quantum information processing using acousto-optic scattering processes between distinct transverse modes. We show that controllable phase matching in intermodal processes enables 2 × 2 frequency beamsplitters and transverse-mode-dependent phase shifters, which together comprise cascadable FRequency-transverse-mODe Operations (FRODOs) that can synthesize any unitary via analytical decomposition procedures. Modeling the performance of both random gates and discrete Fourier transforms, we demonstrate the feasibility of high-fidelity quantum operations with existing integrated photonics technology, highlighting prospects of parallelizable operations achieving 100% bandwidth utilization. Our approach is realizable with CMOS technology, opening the door to scalable on-chip quantum information processing in the frequency domain.

Lukens, Joseph M. [Purdue Univ., West Lafayette, I↗

ExEP Yield Modeling Tool and Validation Test Results

EXOSIMS is an open-source simulation tool for parametric modeling of the detection yield and characterization of exoplanets. EXOSIMS has been adopted by the Exoplanet Exploration Programs Standards De nition and Evaluation Team (ExSDET) as a common mechanism for comparison of exoplanet mission concept studies. To ensure trustworthiness of the tool, we developed a validation test plan that leverages the Python-language unit-test framework, utilizes integration tests for selected module interactions, and performs end-to-end cross- validation with other yield tools. This paper presents the test methods and results, with the physics-based tests such as photometry and integration time calculation treated in detail and the functional tests treated summarily. The test case utilized a 4m unobscured telescope with an idealized coronagraph and an exoplanet population from the IPAC radial velocity (RV) exoplanet catalog. The known RV planets were set at quadrature to allow deterministic validation of the calculation of physical parameters, such as working angle, photon counts and integration time. The observing keepout region was tested by generating plots and movies of the targets and the keepout zone over a year. Although the keepout integration test required the interpretation of a user, the test revealed problems in the L2 halo orbit and the parameterization of keepout applied to some solar system bodies, which the development team was able to address. The validation testing of EXOSIMS was performed iteratively with the developers of EXOSIMS and resulted in a more robust, stable, and trustworthy tool that the exoplanet community can use to simulate exoplanet direct-detection missions from probe class, to WFIRST, up to large mission concepts such as HabEx and LUVOIR.

Nunez, Paul↗

Quantum defects in carbon nanotubes as single-photon sources

Single-photon emitters are essential components of emerging quantum technologies, including secure communication and quantum computing. Single-walled carbon nanotubes (SWCNTs) have emerged as a promising platform for quantum light sources due to their quasi-one-dimensional excitonic host structure and compatibility with telecom photonic systems. Recent advances in deterministic defect engineering—most notably the development of organic color centers (OCCs)—have enabled stable, chemically controllable, and spectrally tunable single-photon emission. OCC-based emitters have demonstrated single-photon purity exceeding 99% and, more recently, room-temperature photon indistinguishability, placing them among the few solid-state systems with quantum-grade performance under ambient conditions. This review surveys progress in the field from three complementary perspectives: chemical synthesis and quantum defect engineering, computational studies of structure-property relationships and excitonic behavior, and experimental investigations of quantum optical properties. We also discuss alternative approaches, including air-suspended SWCNTs and hybrid van der Waals heterostructures, highlighting opportunities and open challenges for scalable integration into quantum photonic platforms.

36 MATERIALS SCIENCE↗

High-Performance Near-Infrared Quantum Emission from Color Centers in hBN

Color centers hosted in hexagonal boron nitride (hBN) have emerged as a highly promising platform for single-photon emission and spin-photon technologies relevant to quantum communication and quantum networking. As a wide bandgap van der Waals material, hBN can host optically active quantum defects across a broad spectral range. Here, we demonstrate a simple and scalable oxygen-plasma process that reproducibly creates single quantum emitters in hBN with blinking-free zero-phonon lines (ZPLs) spanning near-infrared (NIR) from 700 up to 971 nm. These emitters combine MHz-level brightness, single-photon purity up to 99.9%, and ultranarrow cryogenic line widths down to 2.7 GHz under quasi-resonant excitation, placing them in a particularly attractive regime for quantum photonics. Photostability measurements further reveal resistance to photobleaching, subnanometer spectral stability over long time scales, and near-shot-noise-limited intensity fluctuations. Analysis of the phonon sidebands shows weak vibronic coupling and ZPL-dominated emission, with Debye–Waller factors approaching 50%. Control experiments together with elemental mapping support oxygen incorporation as a necessary ingredient in activating the NIR emitter population, while first-principles calculations identify O N V N and O N V N H as the leading defect candidates. These results establish a high-performance NIR quantum-emitter platform in hBN for free-space quantum networking and future integrated quantum-photonic architectures.

2D materials↗

Solid-state image sensor with focal-plane digital photon-counting pixel array

A photosensitive layer such as a-Si for a UV/visible wavelength band is provided for low light level imaging with at least a separate CMOS amplifier directly connected to each PIN photodetector diode to provide a focal-plane array of NxN pixels, and preferably a separate photon-counting CMOS circuit directly connected to each CMOS amplifier, although one row of counters may be time shared for reading out the photon flux rate of each diode in the array, together with a buffer memory for storing all rows of the NxN image frame before transfer to suitable storage. All CMOS circuitry is preferably fabricated in the same silicon layer as the PIN photodetector diode for a monolithic structure, but when the wavelength band of interest requires photosensitive material different from silicon, the focal-plane array may be fabricated separately on a different semiconductor layer bump-bonded or otherwise bonded for a virtually monolithic structure with one free terminal of each diode directly connected to the input terminal of its CMOS amplifier and digital counter for integration of the photon flux rate at each photodetector of the array.

Fossum, Eric R.↗

Vacuum deposition of χ(2) nonlinear organic single crystal films on silicon

Integrating second order nonlinear (χ(2)) optical materials on chip is an ongoing challenge for Si photonics. Noncentrosymmetric molecular crystals have the potential to deliver high χ(2) nonlinearity with good thermal stability, but so far have been limited to growth from solution or the melt, which are both difficult to control and scale up in manufacturing. Here, we show that large (>100 μm) single crystal domains of the nonlinear molecule 2-[3-(4-hydroxystyryl)-5,5-dimethylcyclohex-2-enylidene] malononitrile (OH1) can be grown monolithically on either glass or Si via vacuum evaporation, followed by a short thermal annealing step. The crystallites are tens of nanometer thick and exhibit strong second harmonic generation with their primary χ(2) tensor component lying predominantly in plane. Remarkably, we find that a single domain can grow uninterrupted through nearby channels etched on a Si wafer, which may provide a path to integrate OH1 on Si or Si3N4 waveguides for a broad range of χ(2)-based photonic integrated circuit functionality.

Physics↗

An electro-optical Mott neuron based on niobium dioxide

Various applications—including brain-like computing and on-chip artificial vision—increasingly demand a combination of electronic and photonic techniques. However, integrating both approaches on a single chip is challenging, and solutions typically rely on disparate components with power-hungry signal conversions. Here, in this paper, we report electro-optical Mott neurons that combine visible light emission with electrical threshold switching, as well as neuron-like oscillations. The devices are based on thin films of sputtered niobium dioxide (NbO 2 ), a Mott insulator–metal transition material, operating at room temperature and emitting light that peaks around 810 nm. Operando measurements reveal an electronic origin to the light emission: charge carrier relaxation initiated by high-field transport in the NbO 2 . Our devices combine electrical and optical functions within a single material, thereby expanding the options available for future artificial intelligence hardware.

electrical engineering↗

SALSA: a new versatile readout chip for MPGD detectors

The SALSA chip is a future readout ASIC foreseen for the MPGD detectors, developed in the framework of the EIC collider project, to equip the MPGD trackers of the EPIC experiment. It is designed to be versatile, to be adapted to other usages of MPGD detectors like TPC or photon detectors. It integrates a frontend block and an ADC for each of the 64 channels, associated to a configurable DSP processor meant to correct data and reduce the raw data flux to limit the output bandwidth. It will be compatible with the continuous readout foreseen for the EPIC DAQ, but will also work in a triggered environment. Several prototypes are already produced in order to qualify the different blocks of the chip, in particular the frontend, the ADC and the clock generation. The next 32-channel prototype is currently under development and is planed to be produced in 2025. In conclusion, the final prototype will be produced and tested from 2026 for a production of the SALSA chip at the horizon of 2027.

Data processing↗

Time variations of an absorption feature in the spectrum of the gamma-ray burst on 1980 April 19

The photon number spectrum integrated over the impulsive part of the event is shown to fit a thermal bremsstrahlung function with a temperature of 330 + or - 70 keV at energies between 151 and 487 keV. At lower energies, the data points lie considerably below this function, indicating a broad absorption feature extending down to values less than or equal to 28 keV, the lowest energy measured. The upper energy of this absorption feature varies from 100 to 150 keV on a time scale less than or equal to 0.5 s. This event is interpreted as a typical gamma ray burst, even though it is still considered remotely possible that it is of solar origin. The spectral features, together with their variability, are interpreted in terms of electron interactions at the cyclotron resonance frequency in magnetic fields of 10 to the 12th - 10 to the 13th gauss close to the surface of a neutron star.

Dennis, B. R.↗

Ccds: Their Cause and Cure

Charge coupled devices (CCDs) have opened new horizons in the optical astronomy. Most of the presently existing astronomical CCD systems are oriented and designed primarily for work on faint objects. The use of CCDs for high precision work on bright objects remains to be explored. Issues and problems specific to (CCDs) are covered in detail. The important structural characteristics of CCDs are that they are integrating, self scanned, photon counting (one selection for each detected photon), solid state devices. The typical physical sizes are of the order of 1 - 3 cm, and typical raster formats of 500x500 pixels (TI), 320x512 (RCA), 385x576 (GEC), 800x800 (TI), and 1500x1500 (GEC) should be available soon. Typical (and optimal) operating temperatures are around -100 C, with liquid N2 as the most common coolant. Some CCDs are physically warped. This causes focus variations across the surface, which amount to a spatially variable PSF. Other relevant properties of CCDs as detectors and a comparison with some other astronomical detectors are given.

Djorgovski, S.↗

AlxGa1-xAs Single-Quantum-Well Surface-Emitting Lasers

Surface-emitting solid-state laser contains edge-emitting Al0.08Ga0.92As single-quantum-well (SQW) active layer sandwiched between graded-index-of-refraction separate-confinement-heterostructure (GRINSCH) layers of AlxGa1-xAs, includes etched 90 degree mirrors and 45 degree facets to direct edge-emitted beam perpendicular to top surface. Laser resembles those described in "Pseudomorphic-InxGa1-xAs Surface-Emitting Lasers" (NPO-18243). Suitable for incorporation into optoelectronic integrated circuits for photonic computing; e.g., optoelectronic neural networks.

Kim, Jae H.↗

Sensing strategies for toxic vapor detection

This work was motivated by the recommendations of the American Conference of Governmental Industrial Hygienists (ACGIH) that threshold limits for hydrazine, H2N-NH2 in air be lowered from 100 to 10 parts-per-billion (ppb) concentration levels. Hydrazine is one of the high-energy propellants used in large volumes in Space Shuttle, Titan, payloads, and other aerospace operations. Since analytical methods presently available for hydrazine detection and/or determination do not satisfy such low levels of detection, the ultimate goal of this research is the development and characterization of a portable and compact chemical sensor ideally capable to detect (in real time) 1 ppb of hydrazine, continuously and reversibly. The laboratory prototype developed as part of this project is comprised of: (1) a reactor part in which H2N-NH2 reacts, generating chemiluminescence emission, with tris(2,2'-bipyridine)ruthenium(III), which is immobilized on an ion-exchange polymeric materials of a perfluorinated hydrocarbon containing sulfonate groups as exchange centers (Nafion); (2) an electrochemical three-electrode cell posed at a potential at which the immobilized ruthenium complex could be reoxidized to the 3-oxidation state (as to provide reversible and continuous detection); and (3) a low power consumption photomultiplier tube to collect and quantitatively integrate the emitted photons with the help of auxiliary electronics and readout device.

Mottola, Horacio A.↗

Computational Modeling of Semiconductor Dynamics at Femtosecond Time Scales

The Interchange No. NCC2-5149 deals with the emerging technology of photonic (or optoelectronic) integrated circuits (PICs or OEICs). In PICs, optical and electronic components are grown together on the same chip. To build such devices and subsystems, one needs to model the entire chip. PICs are useful for building components for integrated optical transmitters, integrated optical receivers, optical data storage systems, optical interconnects, and optical computers. For example, the current commercial rate for optical data transmission is 2.5 gigabits per second, whereas the use of shorter pulses to improve optical transmission rates would yield an increase of 400 to 1000 times. The improved optical data transmitters would be used in telecommunications networks and computer local-area networks. Also, these components can be applied to activities in space, such as satellite to satellite communications, when the data transmissions are made at optical frequencies. The research project consisted of developing accurate computer modeling of electromagnetic wave propagation in semiconductors. Such modeling is necessary for the successful development of PICs. More specifically, these computer codes would enable the modeling of such devices, including their subsystems, such as semiconductor lasers and semiconductor amplifiers in which there is femtosecond pulse propagation. Presently, there are no computer codes that could provide this modeling. Current codes do not solve the full vector, nonlinear, Maxwell's equations, which are required for these short pulses and also current codes do not solve the semiconductor Bloch equations, which are required to accurately describe the material's interaction with femtosecond pulses. The research performed under NCC2-5149 solves the combined Maxwell's and Bloch's equations.

Agrawal, Govind P.↗

Computational Modeling of Ultrafast Pulse Propagation in Nonlinear Optical Materials

There is an emerging technology of photonic (or optoelectronic) integrated circuits (PICs or OEICs). In PICs, optical and electronic components are grown together on the same chip. rib build such devices and subsystems, one needs to model the entire chip. Accurate computer modeling of electromagnetic wave propagation in semiconductors is necessary for the successful development of PICs. More specifically, these computer codes would enable the modeling of such devices, including their subsystems, such as semiconductor lasers and semiconductor amplifiers in which there is femtosecond pulse propagation. Here, the computer simulations are made by solving the full vector, nonlinear, Maxwell's equations, coupled with the semiconductor Bloch equations, without any approximations. The carrier is retained in the description of the optical pulse, (i.e. the envelope approximation is not made in the Maxwell's equations), and the rotating wave approximation is not made in the Bloch equations. These coupled equations are solved to simulate the propagation of femtosecond optical pulses in semiconductor materials. The simulations describe the dynamics of the optical pulses, as well as the interband and intraband.

Goorjian, Peter M.↗

MEMS Using SOI Substrate

At NASA, the focus for smaller, less costly missions has given impetus for the development of microspacecraft. MicroElectroMechanical System (MEMS) technology advances in the area of sensor, propulsion systems, and instruments, make the notion of a specialized microspacecraft feasible in the immediate future. Similar to the micro-electronics revolution,the emerging MEMS technology offers the integration of recent advances in micromachining and nanofabrication techniques with microelectronics in a mass-producible format,is viewed as the next step in device and instrument miniaturization. MEMS technology offers the potential of enabling or enhancing NASA missions in a variety of ways. This new technology allows the miniaturization of components and systems, where the primary benefit is a reduction in size, mass and power. MEMS technology also provides new capabilities and enhanced performance, where the most significant impact is in performance, regardless of system size. Finally,with the availability of mass-produced, miniature MEMS instrumentation comes the opportunity to rethink our fundamental measurement paradigms. It is now possible to expand our horizons from a single instrument perspective to one involving multi-node distributed systems. In the distributed systems and missions, a new system in which the functionality is enabled through a multiplicity of elements. Further in the future, the integration of electronics, photonics, and micromechanical functionalities into "instruments-on-a-chip" will provide the ultimate size, cost, function, and performance advantage. In this presentation, I will discuss recent development, requirement, and applications of various MEMS technologies and devices for space applications.

Tang, Tony K.↗

Front-illuminated CCD with open pinned-phase region and two-phase transfer gate regions

A front-illuminated CCD of relative high quantum efficiency (QE) and high charge transfer efficiency (CTE) utilizes an open-phase region for receiving photons and two-phase gate regions (.phi..sub.1 and .phi..sub.2) for transferring electrons collected in one pixel to the next. The open-phase region is implanted with additional n-type elements (phosphorus) in order to increase the potential of the CCD channel in the open-phase region for collection of electrons and additionally implanted with concentrated and very shallow p-type elements (boron) to pin the surface of the n-channel in the open-phase region to OV, while gate region .phi..sub.1 and .phi..sub.2 are biased to -3.5V and driven to +10V by a two-phase transfer clock. The open pinned-phase (OPP) region thus permits two-phase transfer clocking and optimum reception of photons during the integration periods between transfer clock pulses.

Janesick, James R.↗