Results for “Metal Oxides” — Page 11

NASA NTRS1995

Active pixel sensor with intra-pixel charge transfer

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Fossum, Eric R.↗

NASA NTRS2005

Active pixel sensor pixel having a photodetector whose output is coupled to an output transistor gate

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. A Simple Floating Gate (SFG) pixel structure could also be employed in the imager to provide a non-destructive readout and smaller pixel sizes.

Fossum, Eric R.↗

NASA NTRS2003

Active pixel sensor with intra-pixel charge transfer

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Fossum, Eric R.↗

NASA NTRS2004

Active pixel sensor with intra-pixel charge transfer

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Fossum, Eric R.↗

NASA NTRS2003

Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

Fossum, Eric R.↗

NASA NTRS2006

Method of acquiring an image from an optical structure having pixels with dedicated readout circuits

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Fossum, Eric R.↗

NASA NTRS1983

The transient oxidation of single crystal NiAl+Zr

The 800 C oxidation of oriented single crystals of Zr doped beta-NiAl was studied using transmission electron microscopy. The oxide phases and metal-oxide orientation relationships were determined to characterize the transient stages of oxidation prior to the transformation to or formation of alpha-Al2O3. On (001) and (012) metal orientations, NiAl2O4 was the first oxide to form followed by delta-Al2O3 which becomes the predominant oxide phase. All oxides were highly epitaxially related to the metal; the orientation relationships being function of parallel cation close-packed directions in the meta and oxide. On (011) and (111) metal orientations, gamma-Al2O3 became the predominant oxide phase rather than delta-Al2O3, indicating a structural stability from the highly epitaxial oxides. The relative concentration of aluminum in the oxide scales increased with time indicating preferential gamma-or delta-Al2O3 growth. The striking feature common to the orientation relationships is the alignment of 100 m and 110 ox directions, believed to result from the minimal 3 percent mismatch between the corresponding (100)m and (110)ox planes.

Doychak, J. K.↗

NASA NTRS1981

Microstructure of Al2O3 scales formed on NiCrAl alloys

The structure of transient scales formed on pure and Y or Zr-doped Ni-15Cr-13Al alloys oxidized for 0.1 hr at 1100 C was studied by the use of transmission electron microscopy. Crystallographically oriented scales were found on all three alloys, but especially for the Zr-doped NiCrAl. The oriented scales consisted of alpha-(Al,Cr)2O3, Ni(Al,Cr)2O4 and gamma-Al2O3. They were often found in intimate contact with each other such that the close-packed planes and directions of one oxide phase were aligned with those of another. The prominent structural features of the oriented scales were approximately equal to micrometer subgrains; voids, antiphase domain boundaries and aligned precipitates were also prevalent. Randomly oriented alpha-Al2O3 was also found and was the only oxide ever observed at the immediate oxide metal interface. These approximately 0.15 micrometer grains were populated by intragranular voids which decreased in size and number towards the oxide metal interface. A sequence of oxidation was proposed in which the composition of the growing scale changed from oriented oxides rich in Ni and Cr to oriented oxides rich in Al. At the same time the structure changed from cubic spinels to hexagonal corundums with apparent precipitates of one phase in the matrix of the other. Eventually randomly oriented pure alpha-Al2O3 formed as the stable oxide with an abrupt transition: there was no gradual loss of orientation, no gradual compositional change or no gradual decrease in precipitate density.

Smialek, J. L.↗

NASA NTRS2011

Rad-Hard, Miniaturized, Scalable, High-Voltage Switching Module for Power Applications Rad-Hard, Miniaturized

A paper discusses the successful development of a miniaturized radiation hardened high-voltage switching module operating at 2.5 kV suitable for space application. The high-voltage architecture was designed, fabricated, and tested using a commercial process that uses a unique combination of 0.25 micrometer CMOS (complementary metal oxide semiconductor) transistors and high-voltage lateral DMOS (diffusion metal oxide semiconductor) device with high breakdown voltage (greater than 650 V). The high-voltage requirements are achieved by stacking a number of DMOS devices within one module, while two modules can be placed in series to achieve higher voltages. Besides the high-voltage requirements, a second generation prototype is currently being developed to provide improved switching capabilities (rise time and fall time for full range of target voltages and currents), the ability to scale the output voltage to a desired value with good accuracy (few percent) up to 10 kV, to cover a wide range of high-voltage applications. In addition, to ensure miniaturization, long life, and high reliability, the assemblies will require intensive high-voltage electrostatic modeling (optimized E-field distribution throughout the module) to complete the proposed packaging approach and test the applicability of using advanced materials in a space-like environment (temperature and pressure) to help prevent potential arcing and corona due to high field regions. Finally, a single-event effect evaluation would have to be performed and single-event mitigation methods implemented at the design and system level or developed to ensure complete radiation hardness of the module.

Adell, Philippe C.↗

NASA NTRS1986

Solar wind helium, neon and argon released by oxidation of metal grains from the Weston chondrite

A set of experiments were carried out to test the feasibility of determining unfractionated elemental and isotopic ratios for the noble gases in the presumably ancient solar wind present in the gas rich meteorites. The problems of diffusive loss was avoided by analyzing metal rather than the usual silicates. In order to avoid chemical, and even harsh physical, treatment of the sample, which might have affected the surfaces of metal grains, a means of analyzing the metal in the presence of residual silicate not removed by gentle crushing and magnetic separation was devised. Preliminary results given were obtained by taking advantage of the differing properties of metal and silicates with regard to diffusion. The results suggests that, with some modifications in the choice of pyrolysis and combustion temperatures and in the amount of O2 used, it should be possible, by oxidizing the surfaces of metal grains from gas rich meteorites, to obtain data on solar wind that has not been fractionated by diffusive loss.

Becker, R. H.↗

NASA NTRS2000

Process for Producing Metal Compounds from Graphite Oxide

A process for providing elemental metals or metal oxides distributed on a carbon substrate or self-supported utilizing graphite oxide as a precursor. The graphite oxide is exposed to one or more metal chlorides to form an intermediary product comprising carbon. metal. chloride. and oxygen This intermediary product can be flier processed by direct exposure to carbonate solutions to form a second intermediary product comprising carbon. metal carbonate. and oxygen. Either intermediary product may be further processed: a) in air to produce metal oxide: b) in an inert environment to produce metal oxide on carbon substrate: c) in a reducing environment. to produce elemental metal distributed on carbon substrate. The product generally takes the shape of the carbon precursor.

Hung, Ching-Cheh↗

NASA NTRS2000

Process for Producing Metal Compounds From Graphite Oxide

A process for providing elemental metals or metal oxides distributed on a carbon substrate or self-supported utilizing graphite oxide as a precursor. The graphite oxide is exposed to one or more metal chlorides to form an intermediary product comprising carbon, metal, chloride, and oxygen. This intermediary product can be fiber processed by direct exposure to carbonate solutions to form a second intermediary product comprising carbon. metal carbonate. and oxygen. Either intermediary product may be further processed: a) in air to produce metal oxide b) in an inert environment to produce metal oxide on carbon substrate; c) in a reducing environment to produce elemental metal distributed on carbon substrate. The product generally takes the shape of the carbon precursor.

Ching-Cheh Hung↗

NASA NTRS2000

Process for producing metal compounds from graphite oxide

A process for providing elemental metals or metal oxides distributed on a carbon substrate or self-supported utilizing graphite oxide as a precursor. The graphite oxide is exposed to one or more metal chlorides to form an intermediary product comprising carbon, metal, chloride, and oxygen This intermediary product can be flier processed by direct exposure to carbonate solutions to form a second intermediary product comprising carbon, metal carbonate, and oxygen. Either intermediary product may be further processed: a) in air to produce metal oxide; b) in an inert environment to produce metal oxide on carbon substrate; c) in a reducing environment to produce elemental metal distributed on carbon substrate. The product generally takes the shape of the carbon precursor.

Hung, Ching-Cheh↗

NASA NTRS1991

Oxygen production by pyrolysis of lunar regolith

Oxygen was identified as the most important product of initial lunar materials processing efforts. A source of oxygen on the Moon provides an alternative to the costly transport of propellant to the Moon or to low earth orbit. Pyrolysis, or vapor-phase reduction, involves heating a feedstock to temperatures sufficient to decompose the constituent metal oxides and release oxygen. The process relies on the vaporization of metal oxides in the form of reduced suboxides or atomic species. The reduced species must then be condensed without re-oxidizing, yielding oxygen in the gas phase. The feasibility of obtaining oxygen from common lunar minerals was demonstrated using solar furnace experiments. These results are discussed together with chemical equilibrium models which were extended to include the multicomponent oxides used in experiments. For the first time, both experiments and theoretical models dealt with the complex oxides that make up potential lunar feedstocks. Two major conclusions are drawn from this preliminary work. First, unbeneficiated regolith is a suitable feedstock for pyrolysis. Second, the process can operate at moderate temperatures, circa 2000 K, which could be supplied by direct solar or electrical energy. In addition to these advantages in choice of feedstock and energy source, the pyrolysis process requires no chemicals or reagents, making it an attractive process for lunar oxygen production.

Senior, Constance L.↗

NASA NTRS1976

Oxidation of metals and alloys in controlled atmospheres using in situ transmission electron microscopy and Auger spectrography

Single-crystalline thin films of copper were oxidized at an isothermal temperature of 425 C and at an oxygen partial pressure of .005 Torr in situ in a high-resolution electron microscope. The specimens were prepared by epitaxial vapor deposition onto polished 100 and 110 faces of rocksalt and mounted in a hot stage inside an ultra-high-vacuum specimen chamber of the microscope. Large amounts of sulfur, carbon, and oxygen were detected by Auger electron spectroscopy on the surface of the as-received films and were removed in situ by ion-sputter etching immediately prior to the oxidation. The nucleation and growth characteristics of Cu2O on Cu were studied. Results show that neither stacking faults nor dislocations are associated with the Cu2O nucleation sites. The growth of Cu2O nuclei is linear with time. The experimental findings, including results from oxygen dissolution experiments and from repetitive oxidation-reduction-oxidation sequences, fit well into the framework of an oxidation process involving (a) the formation of a surface-charge layer, (b) oxygen saturation in the metal and (c) nucleation, followed by surface diffusion of oxygen and bulk diffusion of copper for lateral and vertical oxide growth, respectively.

Rao, D. B.↗

NASA NTRS2018

Ionic Liquid Facilitated Recovery of Metals and Oxygen from Regolith

Regolith, being largely composed of metal oxides, has the potential to be an excellent in situ source of metals, such as iron, nickel and aluminum, as well as oxygen. There is, however, no current technology that is suited for the in space separation of metal oxides into their constituent elements. Terrestrial methods require large volumes/masses of hazardous reagents. Alternative methods, such as molten oxide electrolysis, have been investigated, but these processes generally require high temperatures to operate. Such a requirement imposes significant material compatibility restraints, necessitates high energy inputs, and may pose a threat to the health and safety of the crew. This paper discusses a novel process that uses ionic liquids (ILs) to recover high purity metals and oxygen from regolith and meteorite materials. ILs are organic salts that are molten at or near room temperature, and can have a number of attractive properties including wide liquidus ranges and high thermal and electrochemical stability. The structure of an IL can be readily modified to tune these properties, allowing the synthesis of task specific ILs. Together, these attributes give ILs great utility in a number of space related areas, such environmental control and life support, in space repair and manufacture, and in situ resource utilization.

Karr, Laurel J.↗

NASA NTRS1979

Furnace brazing under partial vacuum

Brazing furnace utilizing partial-vacuum technique reduces tooling requirements and produces better bond. Benefit in that partial vacuum helps to dissociate metal oxides that inhibit metal flow and eliminates heavy tooling required to hold parts together during brazing.

Mckown, R. D.↗

NASA NTRS1979

Materials and techniques for spacecraft static charge control 2

Results of exploratory development on the design, fabrication and testing of transparent conductive coatings, conductive bulk materials and grounding techniques for application to high resistivity spacecraft dielectric materials to obtain control of static charge buildup are presented. Deposition techniques for application of indium oxide, indium/tin oxide and other metal oxide films on Kapton, FEP Teflon, OSR and solar cell coverglasses discussed include RF and Magnetron sputtering and vapor deposition. Development, fabrication and testing of conductive glass tiles for OSR and solar cell coverglass applications is discussed. Several grounding techniques for rapid charge dissipation from the conductively coated polymer and glass dielectrics which were developed and tested in thermal cycled and electron plasma environments are described. The optical and electrical characterization and aging effects of these coatings, bulk materials and grounding techniques are reviewed as they apply to the performance of their design functions in a geosynchronous orbit environment.

Schmidt, R. E.↗