Lead telluride bonding and segmentation study Semiannual phase report, Aug. 1, 1967 - Jan. 31, 1968
Constitutional studies of SnTe and Si-Ge metal systems, segmented Si-Ge-PdTe thermocouple efficiencies, and pore migration in PbSnTe thermoelements
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Constitutional studies of SnTe and Si-Ge metal systems, segmented Si-Ge-PdTe thermocouple efficiencies, and pore migration in PbSnTe thermoelements
Diffusion bonding for leaktight joints in connectors using intermediate metal system of Au-Cu-Au
Melting points of GaP-metal systems and growth of GaP by vertical liquid epitaxy
The results are presented of a program to demonstrate the processes for fabricating complementary MISFET beam-leaded circuits, which, potentially, are comparable in quality to available bipolar beam-lead chips that use silicon nitride passivation in conjunction with a platinum-titanium-gold metal system. Materials and techniques, different from the bipolar case, were used in order to be more compatible with the special requirements of fully passivated complementary MISFET devices. Two types of circuits were designed and fabricated, a D-flip-flop and a three-input NOR/NAND gate. Fifty beam-leaded chips of each type were constructed. A quality and reliability assurance program was performed to identify failure mechanisms. Sample tests and inspections (including destructive) were developed to measure the physical characteristics of the circuits.
Development of an alternate approach to the conventional methods of reliability assurance for large-scale integrated circuits. The product treated is a large-scale T squared L array designed for space applications. The concept used is that of qualification of product by evaluation of the basic processing used in fabricating the product, providing an insight into its potential reliability. Test vehicles are described which enable evaluation of device characteristics, surface condition, and various parameters of the two-level metallization system used. Evaluation of these test vehicles is performed on a lot qualification basis, with the lot consisting of one wafer. Assembled test vehicles are evaluated by high temperature stress at 300 C for short time durations. Stressing at these temperatures provides a rapid method of evaluation and permits a go/no go decision to be made on the wafer lot in a timely fashion.
The initial results of a study directed to the task of selecting suitable evaluation tests which can form the basis for guidelines for electrically insulated adhesives are given. The properties of adhesives considered to be of major importance for the proposed application are enumerated, with brief comments. Specific tests to determine the chemical and electrolytic corrosivity of adhesives to commonly used metallization systems, their long-term outgassing after cure, and their bond strengths under a variety of conditions are defined and discussed in detail.
Initial experiments conducted during the Apollo 14 mission demonstrated that unique dispersions of immiscible materials could be obtained by processing in a low gravity environment. Subsequently, seven metallic systems have been processed in three NASA facilities: the drop tower at MSFC, the M-512 facility on board a KC-135 aircraft and the M-518 furnace on board Skylab. All couples were solidified from the liquid while in a low gravity environment, with one gravity processed specimens as controls. Metallographic examination demonstrated that the specimens processed in a low gravity environment exhibited a more uniform dispersion and microstructure than the one gravity processed controls.
Sounding rocket Experiment 74-18 was designed to demonstrate the effects of the Black Brandt rocket acceleration levels (during the low-g coast phase of its flight) on the motion of a liquid metal system to assist in preflight design. Some post flight analyses were also conducted. Preflight studies consisted of heat transfer analysis and convection sensitivity and convection modeling analyses which aided in the: (1) final selection of fluid materials (indium-lead melts rather than paraffins); (2) design and timing of heater and quench system; and (3) preflight predictions of the degree of lead penetration into the pure indium segment of the fluid. Postflight studies involved: (1) updating the convection sensitivity calculations by utilizing actual flight gravity levels; and (2) modeling the mixing in the flight samples.
Improved gas-path seals are needed for better fuel economy, longer performance retention, and lower maintenance, particularly in advanced, high-performance gas turbine engines. Problems encountered in gas-path sealing are described, as well as new blade-tip sealing approaches for high-pressure compressors and turbines. These include a lubricant coating for conventional, porous-metal, rub-strip materials used in compressors. An improved hot-press metal alloy shows promise to increase the operating surface temperatures of high-pressure-turbine, blade-tip seals to 1450 K (2150 F). Three ceramic seal materials are also described that have the potential to allow much higher gas-path surface operating temperatures than are possible with metal systems.
Integrated-circuit devices using the Ti/W/Au metal system are subject to failure mechanisms based on electrolytic corrosion. The migratory gold resistive short (MGRS) failure mode is one example of this mechanism and results in the formation of filamentary or dendritic deposits of gold between adjacent stripes on the IC chip. This reaction requires the presence of a sufficient amount of water, a bias voltage between adjacent stripes, and the activation of the cathodic (-) stripe. Gold ions are transported from anode to cathode through a film of moisture adsorbed on the surface of the chip; halide ions are probably involved in the transfer. Their presence is verified experimentally by X-ray photoelectron spectroscopy. Some of the chemical and electrostatic factors involved in the MGRS mechanism are discussed in this paper, including the questions of a threshold level of moisture and contamination.
Principles underlying the design of metallic systems for stress rupture resistance are outlined by considering the specific case studies of cobalt- and nickel-base superalloys. Ways in which superalloys can be designed for high stress rupture resistance are discussed. In describing the alloying procedures, the strengthening mechanisms involved and methods of avoiding phases detrimental to stress rupture resistance are identified. New processing techniques such as controlled solidification, prealloyed powder processing, and autoclave heat treatments are described as further means of achieving increased stress rupture resistance in superalloy and other systems.
Unexpected results from SPAR experiments, directed at obtaining fine dispersions of metal systems that in a 1-g environment tend to segregate very rapidly, were considered. The physical processes occurring in fluid samples, such as the SPAR samples before solidification, were shown to be insufficient to produce a well mixed liquid by the time solidification was initiated. This would result in solidified samples with the type of segregation noted in the SPAR samples. Experimental evidence and analytical arguments are presented.
The panel assembly consisted of an external thermal protection system (metallic heat shields and insulation blankets) and an aluminum honeycomb structure. The structure was cooled to temperature 442K (300 F) by circulating a 60/40 mass solution of ethylene glycol and water through dee shaped coolant tubes nested in the honeycomb and adhesively bonded to the outer skin. Rene'41 heat shields were designed to sustain 5000 cycles of a uniform pressure of + or - 6.89kPa (+ or - 1.0 psi) and aerodynamic heating conditions equivalent to 136 kW sq m (12 Btu sq ft sec) to a 422K (300 F) surface temperature. High temperature flexible insulation blankets were encased in stainless steel foil to protect them from moisture and other potential contaminates. The aluminum actively cooled honeycomb sandwich structural panel was designed to sustain 5000 cycles of cyclic in-plane loading of + or - 210 kN/m (+ or - 1200 lbf/in.) combined with a uniform panel pressure of + or - 6.89 kPa (?1.0 psi).
A rate equation describing the desorption of particles from substrates has been formulated using a simple classical model in terms of the particulate escape probabilities and escape velocities. Numerical results for desorption rates as a function of temperature using simple two-body potentials are calculated for various metallic systems. These results were obtained for the low coverage limits and are found to be in good agreement with experimental findings. The present formulation also provides an improved picture of the physical nature of the commonly discussed parameters, such as the frequency factor, desorption energy, and desorption temperature in relation to observed desorption phenomena.
The experimental work demonstrating the feasibility of the MIDFILM process as a low cost means of applying solar cell collector metallization as reported. Cell efficiencies of above 14% (AMl, 28 C) were achieved with fritted silver metallization. Environmental tests suggest that the metallization is slightly humidity sensitive and degradation is observed on cells with high series resistance. The major yield loss in the fabrication of cells was due to discontinuous grid lines, resulting in high series resitance. Standard lead-tin solder plated interconnections do not appear compatible with the MIDFILM contact. Copper, nickel and molybdemun base powder were investigated as low cost metallization systems. The copper based powder degraded the cell response. The nickel and molybdenum base powders oxidized when sintered in the oxidizing atmosphere necessary to ash the photoresin.
Research on titanium multiwall used for thermal protection is reviewed. Continuing analytical and experimental studies yielding a fundamental understanding of the thermal and structural performance of the basic multiwall concept are presented noting that central to this understanding is a knowledge of the extensional behavior of the dimpled sheets since the thinner flat sheets will buckle and be relatively ineffective in supporting compressive loads. Results from radiant heating, aerothermal, vibration, acoustic and lightning strike tests are described as part of an effort to verify the performance of multiwall tiles under representative operating conditions. Flight tests of a large array of tiles are also planned as part of an orbiter experiments program. The research effort is being extended from flat all-titanium multiwall configurations limited to temperatures below 810 K to curved surfaces and higher temperature versions. Multi-wall concepts are found to offer the durability of metallic systems and to be mass competitive with the insulation system currently used on the Space Shuttle Orbiter.
A new type of high-pressure apparatus for low-temperature experiments was built, which allows loading and measuring the load in situ at low temperature (1.5 K). It uses the diamond anvil in the flat-indentor configuration. It was used to investigate the high-conductivity state of sulfur at low temperatures. For pressures in the 50-GPa range, sulfur is still a semiconductor or at best a two phase semiconductor-metal system. As the temperature is lowered at 50 GPa, the resistance drops slightly, reaches a minimum around 230 deg K, and then increases dramatically.
High temperature barrier metallizations were assessed and tested for I(2)L and CMOS applications. Life tests were accelerated to 375 C in view of the -55 C to +300 C temperature range established for engine-located electronics without fuel cooling. The gold-refractory metallizations evaluated were Au-TiW-PtSi, Au-TiW/TiO2/TiW-PtSi and Au-TiW(N)-PtSi. These metallization systems were thermally annealed to at least 375 C for up to 250 hours. The critical requirement for stable diffusion barrier is the TiW grain size. Small grain (250A-500A) films were observed to be stable up to 375 C. Deposition to TiW diffusion barrier in the presence of oxygen and nitrogen also results in an effective diffusion barrier. Auger electron spectroscopy profiles of the PtSi indicates some penetration by the TiW. In the case of PtSi/TiW interface, the redistribution of oxygen further passivates the system by forming a TiO2 layer at the interface.