Preliminary results from aircraft flight tests of an electrically scanning microwave radiometer
Aircraft flight tests of electric scanning microwave radiometer designed for meteorological satellite
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Aircraft flight tests of electric scanning microwave radiometer designed for meteorological satellite
The primary applications of the cryocoolers are for cooling various Josephson devices such as SQUID magnetometers and amplifiers, voltage standards, and microwave mixers and detectors. The common feature of these devices is their extremely low inherent bias power requirement, of the order of 10/1 W per junction. This provides the possibility of designing compact, low-power cryocoolers for these applications. Several concepts were explored and a number of laboratory model cryocoolers were built. These include low-power nonmagnetic regenerative machines of the Stirling or Gifford-McMahon type, three or four-stage Joule-Thomson machines, liquid-helium dewars with integral small cryocoolers to reduce the evaporation rate, and liquid-helium dewars with integral continuously or intermittently operated small helium liquefiers to permit operation of cryogenic devices for indefinite time periods.
There are two points that should be noted. First, in the thermal resistance calculations it is assumed that the device is operating at 773 K while the results of the room temperature simulations are used. This was done because there is not enough information to correctly predict the material parameters at 773 K. Since, in general, device performance degrades with increasing temperature, the cw results are perhaps a bit optimistic. Second, the electric field in these structures gets extremely high and there might be some possibility of tunneling. This was not incorporated into the simulation. Again, this could result in different device operating conditions.
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Interdigitated photodetectors of various geometries have been fabricated on GaAlAs/GaAs heterostructure material. Optical response characteristics of these devices have been examined at both dc and microwave frequencies. The microwave response, at frequencies to 8 GHz, was studied by illuminating the devices with the output of an internally modulated GaAlAs diode laser. Results of these measurements are presented and compared with that of GaAs photoconductors.
Interdigitated photodetectors of various geometries have been fabricated on GaAlAs/GaAs heterostructure material. Optical response characteristics of these devices have been examined at both dc and microwave frequencies. The microwave response, at frequencies to 8 GHz, was studied by illuminating the devices with the output of an internally modulated GaAlGa diode laser. Results of these measurements are presented and compared with that of GaAs photoconductors.
Future high capacity satellite communication systems require signal processing on board satellites. The on-board signal processing includes switching of RF signals between multiple antennas to provide interconnection between the uplink and downlink beams. This paper describes the development of a dynamic switch matrix for a TDMA satellite switching system to be used in the next generation communications satellites. In this paper, a dynamic switch matrix, which includes the microwave switch matrix, the distribution control unit and the timing source, will be described. Several different microwave switch matrix architectures and switching devices were evaluated and compared. A unique coupler crossbar switch matrix architecture with dual-gate field effect transistor as switching element was developed. Experimental results of both microwave switch matrix (MSM) and distribution control unit (DCU) are presented. These test results verify the MSM with coupler crossbar architecture and dual-gate FET as switching element will meet the future SS-TDMA system requirements. Finally, the reliability of the dynamic switch matrix is addressed. The analysis shows reliability of 0.9981 for 7 year space operation can be achieved for the designed dynamic switch matrix.
Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Accomplishments include the determination of the reasons for differences in measurements of transistor delay time, identification of an energy level model for gold-doped silicon, and the finding of evidence that it does not appear to be necessary for an ultrasonic bonding tool to grip the wire and move it across the substrate metallization to make the bond. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; measurement of thermal properties of semiconductor devices, delay time, and related carrier transport properties in junction devices, and noise properties of microwave diodes; and characterization of silicon nuclear radiation detectors.
Significant accomplishments include development of a procedure to correct for the substantial differences of transistor delay time as measured with different instruments or with the same instrument at different frequencies; association of infrared response spectra of poor quality germanium gamma ray detectors with spectra of detectors fabricated from portions of a good crystal that had been degraded in known ways; and confirmation of the excellent quality and cosmetic appearance of ultrasonic bonds made with aluminum ribbon wire. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon, development of the infrared response technique; evaluation of wire bonds and die attachment; and measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes.
This progress report describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Significant accomplishments during this reporting period include design of a plan to provide standard silicon wafers for four-probe resistivity measurements for the industry, publication of a summary report on the photoconductive decay method for measuring carrier lifetime, publication of a comprehensive review of the field of wire bond fabrication and testing, and successful completion of organizational activity leading to the establishment of a new group on quality and hardness assurance in ASTM Committee F-1 on Electronics. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation-recombination-trapping centers in silicon; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; and measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes.
A millimeter-submillimeter transmitter and receiver system for propagation studies with an optically pumped laser as a source and a quasi-optical superheterodyne receiver is described. Topics are discussed in the areas of extended microwave techniques, quasi-optical devices and methods, radiometry, and measurements of importance to spectroscopy and propagation. Measurements obtained with operational systems are highlighted and their significance to physical questions and future system applications discussed.
The progress for the first year of the work done under the Director's Discretionary Fund (DDF) research project entitled, 'Development of Si(1-x)Ge(x) Technology for Microwave Sensing Applications.' This project includes basic material characterization studies of silicon-germanium (SiGe), device processing on both silicon (Si) and SiGe substrates, and microwave characterization of transmission lines on silicon substrates. The material characterization studies consisted of ellipsometric and magneto-transport measurements and theoretical calculations of the SiGe band-structure. The device fabrication efforts consisted of establishing SiGe device processing capabilities in the Lewis cleanroom. The characterization of microwave transmission lines included studying the losses of various coplanar transmission lines and the development of transitions on silicon. Each part of the project is discussed individually and the findings for each part are presented. Future directions are also discussed.
The purpose of the adaptive multisensor fusion system currently being designed at NASA/Johnson Space Center is to provide a robotic rover with assured vision and safe navigation capabilities during robotic missions on planetary surfaces. Our approach consists of using multispectral sensing devices ranging from visible to microwave wavelengths to fulfill the needs of perception for space robotics. Based on the illumination conditions and the sensors capabilities knowledge, the designed perception system should automatically select the best subset of sensors and their sensing modalities that will allow the perception and interpretation of the environment. Then, based on reflectance and emittance theoretical models, the sensor data are fused to extract the physical and geometrical surface properties of the environment surface slope, dielectric constant, temperature and roughness. The theoretical concepts, the design and first results of the multisensor perception system are presented.
An ion engine is a plasma thruster which produces thrust by extracting ions from the plasma and accelerating them to high velocity with an electrostatic field. The ions are then neutralized and leave the engine as high velocity neutral particles. The advantages of ion engines are high specific impulse and efficiency and their ability to operate over a wide range of input powers. In comparison with other electric thrusters, the ion engine has higher efficiency and specific impulse than thermal electric devices such as the arcjet, microwave, radiofrequency and laser heated thrusters and can operate at much lower current levels than the MPD thruster. However, the thrust level for an ion engine may be lower than a thermal electric thruster of the same operating power, consistent with its higher specific impulse, and therefore ion engines are best suited for missions which can tolerate longer duration propulsive phases. The critical issue for the ion engine is lifetime, since the prospective missions may require operation for several thousands of hours. The critical components of the ion engine, with respect to engine lifetime, are the screen and accelerating grid structures. Typically, these are large metal screens that must support a large voltage difference and maintain a small gap between them. Metallic whisker growth, distortion and vibration can lead to arcing, and over a long period of time ion sputtering will erode the grid structures and change their geometry. In order to study the effects of long time operation of the grid structure, we are developing computer codes based on the Particle-In-Cell (PIC) technique and Laser Induced Fluorescence (LIF) diagnostic techniques to study the physical processes which control the performance and lifetime of the grid structures.
An ion engine is a plasma thruster which produces thrust by extracting ions from the plasma and accelerating them to high velocity with an electrostatic field. The ions are then neutralized and leave the engine as high velocity neutral particles. The advantages of ion engines are high specific impulse and efficiency and their ability to operate over a wide range of input powers. In comparison with other electric thrusters, the ion engine has higher efficiency and specific impulse than thermal electric devices such as the arcjet, microwave, radio frequency, and laser heated thrusters and can operate at much lower current levels than the MPD thruster. However, the thrust level for an ion engine may be lower than a thermal electric thruster of the same operating power, consistent with its higher specific impulse, and therefore ion engines are best suited for missions which can tolerate longer duration propulsive phases. The critical issue for the ion engine is lifetime, since the prospective missions may require operation for several thousands of hours. The critical components of the ion engine, with respect to engine lifetime, are the screen and accelerating grid structures. Typically, these are large metal screens that must support a large voltage difference and maintain a small gap between them. Metallic whisker growth, distortion, and vibration can lead to arcing, and over a long period of time ion sputtering will erode the grid structures and change their geometry. In order to study the effects of long time operation of the grid structure, we are developing computer codes based on the particle-in-cell (PIC) technique and laser induced fluorescence (LIF) diagnostic techniques to study the physical processes which control the performance and lifetime of the grid structures.
The power allocation and distribution (PAD) circuitry is capable of allocating and distributing a single or multiple sources of power over multi-elements of a power user grid system. The purpose of this invention is to allocate and distribute power that is collected by individual patch rectennas to a region of specific power-user devices, such as actuators. The patch rectenna converts microwave power into DC power. Then this DC power is used to drive actuator devices. However, the power from patch rectennas is not sufficient to drive actuators unless all the collected power is effectively used to drive another group by allocation and distribution. The power allocation and distribution (PAD) circuitry solves the shortfall of power for devices in a large array. The PAD concept is based on the networked power control in which power collected over the whole array of rectennas is allocated to a sub domain where a group of devices is required to be activated for operation. Then the allocated power is distributed to individual element of power-devices in the sub domain according to a selected run-mode.
A class of reconfigurable microwave antennas now undergoing development comprise fairly conventional printed-circuit feed elements and radiating patches integrated with novel switches containing actuators of the microelectromechanical systems (MEMS) type. In comparison with solid-state electronic control devices incorporated into some prior printed microwave antennas, the MEMS-based switches in these antennas impose lower insertion losses and consume less power. Because the radio-frequency responses of the MEMS switches are more nearly linear, they introduce less signal distortion. In addition, construction and operation are simplified because only a single DC bias line is needed to control each MEMS actuator.
Solid state and optical devices suitable for generation and modulation of electromagnetic waves in microwave, millimeter and optical frequency ranges